Dielectric Properties of (Pb1–xXx) (Zr0.7Ti0.3)O3 (X = Ca, Sr, Ba) Ceramics

The dielectric properties of (Pb_{1– x} X_x) (Zr_0.7Ti_0.3)O₃ (X = Ca, Sr, Ba) ceramics (abbreviated PXZT) were investigated for applications to multilayer ceramic capacitors (MLCs) with dielectric layers thinner than 10 μm. The dissipation factors for MLCs with 5-μm-thick dielectric layers were estimated from those for 100-μm-thick disk specimens measured at an oscillation voltage of 20 V_rms. Those for PCZT and PSZT were less than 1.0% when the oscillation voltage was 20 V_rms, while those for conventional BaTiO₃-based dielectric ceramics were greater than 2.5% at 20 V_rms. According to polarization–electric field hysteresis measurements, PCZT and PSZT revealed linear and double hysteresis loops, respectively, while PBZT and BaTiO₃ indicated typical ferroelectric hysteresis loops. The differences in the dissipation factors for the dielectric compositions are attributed to hysteresis in the polarization–electric field loops. These results suggest that PCZT and PSZT are promising dielectric ceramics for MLCs with dielectric layers thinner than 10 μm.     

Dielectric Properties of Ceramics in the System (Sr0.50Pb0.25Ca0.25)TiO3-Bi2O3·3TiO2 and Their Applications in a High-Voltage Capacitor

The dielectric behavior of (1- x )(Sr_0.5Pb_0.25Ca_0.25) TiO₃-x(Bi₂O₃·3TiO₂) was studied using x=O to 8.25 mol%. Around the point at which x equals 1.56 mol%, the following phenomena were observed: (1) At −;22°C, the weak field permittivity increased substantially with a dc bias field, becoming more than twice the zero bias value at a field of 3 kV/mm; (2) the permittivity peak shifted markedly toward a high temperature under a dc bias field; (3) relaxation behavior was evident; and (4) there are large hysteresis loops at low temperatures and double hysteresis loops, which seem to be related to a field-enforced ferroelectric phase, in a wide temperature range. We used dielectrics with an optimized composition of x =4.30 mol% in a small, highly reliable, 15-kV high-voltage ceramic capacitor.     

Crystal Phase and Orientation Control in Integrated Ferroelectric CaBi4Ti4O15 Using a Tailored Liquid of Alkoxides

We used a Ca–Bi–Ti complex alkoxide, in which metal–oxygen bonding was confirmed by spectroscopic analysis, to deposit CaBi₄Ti₄O₁₅ (CBTi144) thin films in various configurations. The phase transition of non-ferroelectric pyrochlore to ferroelectric perovskite in the complex-alkoxy-derived CBTi144 thin films was found to depend on the Pt bottom electrodes. Matching of the atomic arrangement to the Ca–Bi–Ti–O thin films was predominant rather than the strain and crystallinity of the bottom electrode. The thin films crystallized at 650°C on (111)-oriented Pt showed random orientation and ferroelectric P – V hysteresis loops. The endurance property was excellent against a number of switchings. For this reason, CBTi144 thin films would be expected to be excellent for application to ferroelectric random access memories (FeRAM). Polar-axis-oriented CBTi144 films were fabricated on Pt foils using the complex metal alkoxide solution. The 500-nm-thick film had a columnar structure comprising well-developed grains. The a / b -axis orientation of the ferroelectric films is considered to be associated with the preferred orientation of Pt foil. The film showed improved ferro- and piezoelectric properties. The P _r, E _c, and d ₃₃ values were enhanced to become twice those of CBTi144 thin films with random orientation. These polar-axis-oriented CBTi144 films are eminently useful in devices as Pb-free piezoelectric materials.     

Electromechanical Testing and Modeling of a Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 Relaxor Ferroelectric

Compressive prestress effects on the electrical and mechanical properties of relaxor ferroelectric materials were studied as a function of temperature for several formulations of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃-BaTiO₃ (PMN-PT-BT) ceramics. Experimentally measured polarization and strain, induced by an ac electric field, decreased as compressive stress increased. Effective Young's moduli also were measured under constant dc electric fields. A significant decrease in modulus was observed with increasing field. The prestress and modulus experiments were modeled analytically using a proposed relaxor ferroelectric constitutive law. In general, excellent agreement between the model and experiments was obtained, indicating that the model accurately predicted the coupled behavior of this relaxor ferroelectric material.     

Electrical Properties of Superlattice-Structured Bi4Ti3O12–PbBi4Ti4O15 Single Crystals

Single crystals of superlattice-structured ferroelectrics composed of Bi₄Ti₃O₁₂ and PbBi₄Ti₄O₁₅ were grown and the properties of polarization hysteresis and leakage current along the a -axis were investigated. Oxidation treatment led to a marked increase in leakage current at room temperature, showing that electron hole acts as a detrimental carrier for electrical conduction. A well-developed polarization hysteresis with a remanent polarization of 41 μC/cm² was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi₂O₂ layers.     

Electrical and Pyroelectric Properties of Highly (001)-Oriented (Pb0.76Ca0.24)TiO3 Thin Films Grown by a Sol–Gel Process

Highly (001)-oriented (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films were grown on Pt/Ti/SiO₂/Si substrates using a sol–gel process. The PCT film with a highly (001) orientation showed well-saturated hysteresis loops at an applied field of 800 kV/cm, with remanent polarization ( P _r) and coercive electric field ( E _c) values of 23.6 μC/cm² and 225 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss values of these films were 117 and 0.010, respectively. The leakage-current density of the PCT film was 6.15 × 10⁻⁸A/cm² at 5 V. The pyroelectric coefficient ( p ) of the PCT film was measured using a dynamic technique. At room temperature, the p values and figures-of-merit ( F _D) of the PCT film were 185 μC/m²K and 1.79 × 10⁻⁵ Pa^−0.5, respectively.     

Solid Solutions in Antiferroelectric Region of the System PbHfO3-PbTiO3-PbSnO3-PbNO2O6

Dielectric, ferroelectric, and piezoelectric properties were investigated for compositions in the high-lead hafnate region of the system PbHfO₃-PbTiO₃-PbSnO₃-PbNO₂O₆. Phase diagrams were prepared that show the existence of a ferroelectric-to-antiferroelectric phase transition with increasing temperature. Five phases were shown to exist in the portion of the system investigated two ferroelectric phases, two antiferroelectric phases, and one paraelectric phase. Ferroelectric-antiferroelectric phase transitions induced by temperature, electric field, and pressure were investigated. The highest spontaneous polarization measured was approximately 25 μcoul per cm².     

Dielectric-State Analysis in Solid-Solution Pb(Yb1/2Ta1/2)O3–Pb(Lu1/2Nb1/2)O3

The structure and temperature dependence of complex lead perovskite dielectrics were investigated for the system (1 − x )Pb(Yb_1/2Ta_1/2)O₃– x Pb(Lu_1/2Nb_1/2)O₃. Superlattice reflections for the compositions 0.8 < x < 1.0 were observed by X-ray diffractometry, and the temperature-composition dielectric-state diagram was determined. In the present study, the disordered middle composition, with 0.2 < x < 0.8, showed a diffuse paraelectric–ferroelectric phase transition, whereas the ordered end compositions, with 0 ≤ x < 0.2 and 0.8 < x ≤ 1.0, revealed successive sharp paraelectric–antiferroelectric and weak antiferroelectric–ferroelectric phase transitions. The dielectric state was confirmed by examining the variation of polarization ( P ) with electric field ( E ).     

Modifying Structures and Ferroelectric Properties of Pb(Zr0.6Ti0.4)O3 Thin Films by Constraint-Annealing of Precrystallized Film

A tensile or compressive mechanical constraint was applied, during annealing, on the Pb(Zr_0.6Ti_0.4)O₃ (PZT) ferroelectric films to investigate the effects of stress on its crystal structure and electric properties. The external stress was applied by bending the substrate into a circular section. By using both precrystallized film structure and high constraint strain (0.08%), the stress states of PZT during the crystallization process became controllable. Structural change of polycrystalline PZT was observed when crystallized under a compression constraint. Moreover, these films with compression constraint annealing exhibited enhanced remnant polarization by ∼70% and increased dielectric constant by ∼68%. The variations in ferroelectric behaviors were correlated to domain configuration, texture, amount of pyrochlore phase, grain size and residual stress, which are dependent on the stress state during annealing process.     

Influence of Cation Order on the Electric Field-Induced Phase Transition in Pb(Mg1/3Nb2/3)O3-Based Relaxor Ferroelectrics

The effect of cation ordering on an electric field-induced relaxor to normal ferroelectric phase transition in Pb(Mg_1/3Nb_2/3)O₃ (PMN)-based ceramics was investigated. Both A-site La doping and B-site Sc doping were found to enhance the chemical ordering in these relaxor ceramics. However, the enhanced chemical orderings showed different impacts on the dielectric and ferroelectric properties in these perovskite materials. The 5% La doping was observed to shift the dielectric maximum temperature ( T _max) to a significantly lower temperature and suppress the electric field-induced transition to a ferroelectric phase. In contrast, the 5% and 10% Sc doping showed little effect on T _max but strengthened the ferroelectric coupling. The difference is discussed on the basis of cation size and charge imbalance. An electric field-temperature phase diagram is also proposed for the 0.90PMN–0.10Pb(Sc_1/2Nb_1/2)O₃ based on its history dependence of the electric field-induced phase transition.     

Relaxor Behavior and Dielectric Properties of MgTiO3-Doped BaZr0.35Ti0.65O3 Composite Ceramics for Tunable Applications

MgTiO₃-doped BaZr_0.35Ti_0.65O₃ (BZT) composite ceramics have been prepared by the conventional solid-state route. The dielectric nonlinear characteristics and relaxor behavior of these composite ceramics have been investigated. The secondary-phase BaMg₆Ti₆O₁₉ is formed among BZT composite ceramics with the increase of MgTiO₃. BZT composite ceramics show typical diffuse phase transition characteristic and ferroelectric relaxor behavior. The dielectric constant of BZT composite ceramics can be tailored from thousands to hundreds by manipulating the addition of MgTiO₃. The dielectric loss still keeps around 0.001 and the tunability is above 20% at a dc-applied electric field of 25 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite ceramics can be useful for potential microwave tunable applications.     

In situ TEM Investigations of the High-Temperature Relaxor Ferroelectric BiScO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 Ternary Solid Solution

Compositions near the morphotropic phase boundary (MPB) of the BiScO₃–Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ ternary system showed high-temperature relaxor properties (1 kHz) of T _max∼250°C and a permittivity maximum of ∼16 000. Transmission electron microscopy (TEM) was used to investigate the nature of the microstructure under ambient conditions and with in situ heating studies for samples with different composition and electric field-temperature histories. A mottled domain structure was observed with diffraction contrast TEM techniques and associated with frozen in polar micro-domains. These observations are consistent with the low field permittivity temperature measurements made under various frequencies (100 Hz–100 kHz) with a freezing temperature, T _f∼160°C. Field-cooled (FC) samples exhibited a macro-domain structure similar to normal ferroelectric behavior. On heating the FC samples to approximately the T _max and above, the domain contrast was no longer apparent. When subsequently cooled to room temperature conditions, a micro-domain structure was observed, similar to the zero FC samples. The results are discussed with respect to permittivity measurements and phenomenological mechanisms contributing to the dispersion in the permittivity below the Curie maximum.     

Growth of Pb((Zn1/3Nb2/3)0.91Ti0.09)O3 Single Crystals Using an Allomeric Seed Crystal and Their Electrical Properties

Single crystals of Pb((Zn_1/3Nb_2/3)_0.91Ti_0.09)O₃ (PZNT 91/9), 28 mm in diameter and 30 mm in length, have been successfully grown using a modified Bridgman technique with an allomeric seed crystal. X-ray fluorescence analysis (XRFA) measurement confirms that the effect of segregation is not serious. The segregation coefficient k for PbTiO₃ content during crystal growth is 0.99, which causes some fluctuation in the composition along the growth direction. The fluctuation of composition and the complicated domain structure cause a variation of electric properties. Dielectric measurement indicates that PZNT 91/9 crystals exhibit an almost normal ferroelectric phase transition at ∼183°C from the tetragonal phase to the cubic phase. In addition, a weak frequency-dependent ferroelectric-ferroelectric phase transition is observed at ∼85°C, which is attributed to partial conversion of the rhombohedral phase to a tetragonal phase. The dielectric thermal hysteresis behavior and the existence of polarization above the Curie temperature verify that the phase transitions at ∼85° and 183°C are first order with a slight diffuse character and first order, respectively. It is demonstrated that the effects of segregation can be decreased and the homogeneity of the obtained PZNT 91/9 single crystals can be improved by optimizing growth parameters.     

Diffuse Ferroelectric Phase Transition and Relaxor Behaviors in Ba-Based Bismuth Layer-Structured Compounds and La-Substituted SrBi4Ti4O15

The dielectric characteristics of BaBi₂Nb₂O₉, BaBi₄Ti₄O₁₅, BaBi₈Ti₇O₂₇, and La-substituted SrBi₄Ti₄O₄ were investigated to discuss their ferroelectric phase transition and relaxor behaviors. BaBi₂Nb₂O₉ showed typical relaxor behaviors, and a shift of T _m with increasing frequency was observed in BaBi₄Ti₄O₁₅ and SrBi_{4− x} La _x Ti₄O₁₅ ( x =0.8, 1.0) but they underwent a real paraelectric–ferroelectric phase transition on zero-field cooling, while BaBi₈Ti₇O₂₇ showed a normal ferroelectric nature. The reduced concentration and weakened coupling of the dipoles related to A-site bismuth are believed to be responsible for the appearance of short-range electric ordering and the relaxor behaviors in these bismuth layer-structured compounds.     

Ferroelectric Properties of Pb(Zn1/3Nb2/3)O3–PbTiO3–RNbO3(R=Na, K) Ceramics

We investigate the ferroelectric properties of Pb(Zn_1/3Nb_2/3)O₃–PbTiO₃(PZN–PT)-based ceramics, which are stabilized by adding a small amount of NaNbO₃ (NN) and KNbO₃ (KN). As the content of alkali niobate increased, the ferroelectric properties of Pb(Zn_1/3Nb_2/3)O₃–PbTiO₃–RNbO₃ (PZN–PT–RN; R=Na, K) became softer, which was more pronounced in PZN–PT–KN. The difference in the piezoelectric properties between PZN–PT–KN and PZN–PT–NN was explained by the cation size effect. Because the ionic size of Na is smaller than that of K, the Na ion can retain the ferroelectricity of the solid solution more effectively. The field-induced strain of 85PZN–5PT–10NN under 10 kV/cm was as high as 0.1%. Also, the addition of NN increased the tunability of dielectric constant significantly. At a composition of 85PZN–5PT–20NN, the tunability was 90% and no hysteresis was observed. In contrast to RN, the increase in the content of PT caused the transition from relaxor to normal ferroelectrics, which were accompanied by the structural change from the rhombohedral to tetragonal phase.     

The Effect of Deposition Temperature and Postanneal on the Bi3.63Pr0.3Ti3O12 thin Films Prepared by RF-Magnetron Sputtering Method

Praseodymium doped Bi₄Ti₃O₁₂ (BTO) thin films with composition Bi_3.63Pr_0.3Ti₃O₁₂ (BPT) were successfully prepared on Pt/Ti/SiO₂/Si substrates by RF-magnetron sputtering method at substrate temperatures ranging between 500° and 750°C. The structural phase and orientation of the deposited films were investigated in order to understand the effect of the deposition temperature on the properties of the BPT films. As the substrate temperature was increased to 700°C, the films started showing a tendency of assuming a c -axis preferred orientation. At lower temperatures, however, polycrystalline films were formed. The Pt/BPT/Pt capacitor showed an interesting dependence of the remnant polarization (2 P _r) as well as dc leakage current values on the growth temperature. The film deposited at 650°C showed the largest 2 P _r of 29.6 μC/cm². With the increase of deposited temperature, the leakage current densities of films decreased at the same applied field and the film deposited at 750°C exhibited the best leakage current characteristics. In addition, the ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BPT films. It was revealed that the BPT film postannealed in air exhibited the weakest fatigue-resistance characteristics and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in this film.     

Ferroelectric and Dielectric Properties of Pb(Mg1/3Ta2/3)0.7Ti0.3O3 Thin Films Derived from RF Magnetron Sputtering

Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ thin films of single perovskite phase were successfully synthesized by using the RF sputtering deposition technique, followed by post-thermal annealing. While the perovskite structure of Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ is rather unstable, phase evolution in the thin films was manipulated by controlling both working pressure during the sputtering process and post-thermal annealing temperature. The desirable perovskite phase was promoted by increasing the working pressure in the range of 10–25 mTorr, followed by thermal annealing at 600°C. The ferroelectric, dielectric, and polarization behaviors of Pb(Mg_1/3Ta_2/3)_0.7Ti_0.3O₃ films were characterized over a wide range of frequencies. They are strongly affected by the film thickness, where the relative permittivity and remanent polarization increase, while the coercive field decreases with increasing film thickness in the range of 115–360 nm.     

Fatigue of Field-Induced Strain in Antiferroelectric Pb0.97La0.02(Zr0.77Sn0.14Ti0.09)O3 Ceramics

The fatigue of mechanical strain induced by electric fields was investigated for antiferroelectric Pb_0.97La_0.02(Zr_0.77Sn_0.14Ti_0.09)O₃ ceramics. The material shows a high resistance to fatigue owing to bipolar electric cycling up to 10⁸ cycles. The strain hysteresis loop is still fairly symmetric, whereas the maximum field-induced strain decreases by only 30% of its initial value. The fatigued samples show a damaged microstructure with dendritic macrocracks and microcrack clouds. The fatigue is attributed to a combination of electrochemical and mechanical mechanisms.     

Preparation and Characterization of Relaxor Ferroelectric 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 by a Polymerizable Complex Method

A modified polymerizable complex (PC) method for the preparation of the relaxor ferroelectric 0.65Pb(Mg_1/3Nb_2/3)O₃–0.35PbTiO₃ (PMN–PT) ceramics has been developed using a novel water-soluble Nb precursor. The effects of Pb content and sintering temperature on the structure, morphology, composition, and electrical properties of PMN–PT powders and ceramics were investigated systematically. It was found that the modified PC method could effectively reduce the initial crystallization temperature of the perovskite phase to 500°C. For PMN–PT samples with 15% excess Pb content sintered at 600°C for 2 h, the 87% perovskite phase can be achieved, which is much higher than that in conventional solid-state reactions and other solution-based methods at the same temperature. On further increasing the sintering temperature to 1100°C, the perovskite phase content basically remains constant. This is attributed to the Pb-deficient pyrochlore phase formation. On increasing the sintering temperature to 1250°C, the dielectric constant and remnant polarization of PMN–PT ceramics significantly improved due to the larger grain sizes, enhanced density, and the decreasing pyrochlore phase. PMN–PT ceramics with a 98.5% content of the perovskite phase have been fabricated at 1250°C. It displays typical ferroelectric relaxor characteristics with a remnant polarization of 18 μC/cm², a coercive field of 9.6 kV/cm, a piezoelectric coefficient of d ₃₃=360 pC/N, and room-temperature and maximum dielectric constants of 3600 and 10 500 at 1 kHz, respectively.     

Epitaxial Solution Deposition of YBa2Cu3O7−δ-Coated Conductors

A variety of solution deposition routes have been reported for processing complex perovskite-based materials such as ferroelectric oxides and conductive electrode oxides, due to ease of incorporating multiple elements, control of chemical stoichiometry, and feasibility for large area deposition. Here, we report an extension of these methods toward long length, epitaxial film solution deposition routes to enable biaxially oriented YBa₂Cu₃O_7−δ (YBCO)-coated conductors for superconducting transmission wires. Recent results are presented detailing an all-solution deposition approach to YBCO-coated conductors with critical current densities J _c (77 K)>1 MA/cm² on rolling-assisted, biaxially textured, (200)-oriented Ni–W alloy tapes. Solution-deposition methods such as this approach and those of other research groups appear to have promise to compete with vapor phase methods for superconductor electrical properties, with potential advantages for large area deposition and low cost/kA·m of wire.