不同衬底上ZnO:Al透明导电薄膜的性能

室温下,采用射频磁控溅射法在玻璃和聚对苯二甲酸乙二醇酯（polyethylene terephthalate,PET）上沉积了掺铝的氧化锌（ZnO：Al,AZO）透明导电薄膜。通过X射线衍射仪分析不同衬底上AZO薄膜的结构,采用四探针测试仪及紫外可见光分光光度计测试薄膜的光电性能。结果表明：沉积在两种衬底上的AZO薄膜都具有六方纤锌矿结构,最佳取向均为[002]方向;玻璃衬底和PET衬底上制备的AZO薄膜的方阻分别为19/sq和45/sq,薄膜透光率均高于90%。实验表明,柔性衬底透明导电氧化物薄膜可以代替硬质衬底透明导电薄膜使电子器件向小型化、轻便化方向发展。     

Study of aluminium nitride/freestanding diamond surface acoustic waves filters

Highly oriented aluminium nitride (AlN) has been successfully deposited on silicon substrates and on the back side of unpolished, thick, freestanding, polycrystalline diamond films. Structural and electrical properties of the (0 0 2) oriented AlN films have been investigated. Using optimised AlN and chemical vapour deposited diamond films, high quality surface acoustic wave (SAW) filters were constructed by deposition of aluminium inter-digital transducers. The effects of the AlN thickness on the diamond-based SAW filter properties and the SAW propagation were investigated. A phase velocity of 17.1 km/s was observed, which is, to the best of our knowledge, the highest reported value for diamond. The dependence of the phase velocity (v) on the AlN thickness was compared to theoretical predictions. SAW filters with rather low insertion loss, high suppression and high electromechanical coefficient could be obtained. We also report on piezoelectric d₃₃ measurements of AlN films by atomic force microscopy.     

Growth and structural characteristics of perovskite-wurtzite oxide ceramics thin films

Wurtzite ZnO thin films were grown on single-crystal perovskite SrTiO₃(STO) (1 0 0) substrates at various temperatures. The ZnO/STO thin films thus formed exhibit a preferred (1 1 0)-orientation at a growth temperature of 600-700 °C. A high growth temperature enhances not only the (1 1 0)-texture of ZnO/STO thin films but also the crystalline quality of the film. (La_0.7Sr_0.3)MnO₃ (LSMO) thin films were subsequently grown on ZnO(1 1 0)/STO(1 0 0) substrates with various thicknesses, and were polycrystalline. A thicker LSMO film has a stronger (0 0 l)-preferred orientation than the thinner one. The lattice distortion of LSMO decreases as the LSMO thickness increases. Magnetization vs. temperature curves show that both crystalline quality and lattice distortion influence the magnetic properties of LSMO thin films. The physical properties of the manganite oxide can be modulated by forming a heterostructure with wurtzite ZnO.     

Characteristics of ZnO thin film surface acoustic wave devices fabricated using nanocrystalline diamond film on silicon substrates

The propagation characteristics of surface acoustic wave for the ZnO piezoelectric films and nanocrystalline diamond (NCD) films multilayer SAW devices on Si substrates were investigated. High surface acoustic wave velocity is achieved for a ZnO/NCD/Si multilayer structure excited by a bottom-electroded device configuration. The NCD films deposited on Si substrates (NCD/Si) not only possess smooth surface, but also show good compatibility with ZnO materials, such that [002] textured ZnO films can be directly grown on NCD/Si substrates without the necessity of using buffer layer. The surface acoustic wave velocity increased with the thickness of the NCD films. For the thickness of the ZnO and NCD films investigated, the 0th mode surface acoustic velocity in IDT/ZnO/NCD/Si structure achieves 5100 m/s, whereas the 1st mode SAW in the ZnO/IDT/NCD/Si structure reaches 8500 m/s.     

Use of Stress To Produce Highly Oriented Tetragonal Lead Zirconate Titanate (PZT 40/60) Thin Films and Resulting Electrical Properties

Thin films of Pb(Zr_0.4Ti_O.6)O₃ produced by chemical solution deposition were used to study the effects of stress from different platinized single-crystal substrates on film orientation and resulting electrical properties. Films deposited on MgO preferred a (001) orientation due to compressive stress on the film during cooling through the Curie temperature ( T _C). Films on Al₂O₃ were under minimal stress at T _C, resulting in a mixture of orientations. Those on Si preferred a (111) orientation due to templating from the bottom electrode. Films oriented in the 〈001〉 direction demonstrated lower dielectric constants and higher P _r and − d ₃₁ values than (111) films.     

Preparation of AlN and LiNbO3 thin films on diamond substrates by sputtering method

Diamond is attracting interest as a high velocity material because its elastic constant is the highest of all substances and the surface acoustic wave (SAW) velocity is more than 10 000 m/s. Although diamond is not piezoelectric, its high acoustic propagation makes it a desirable substrate for SAW devices when coupled with piezoelectric thin films such as aluminum nitride (AlN) and lithium niobate (LiNbO₃). Highly oriented AlN thin films and LiNbO₃ thin films were prepared by a reactive sputtering method on polycrystalline diamond substrates. The average surface roughness (Ra) of the AlN thin films was below 2 nm by locating the diamond substrates at the position of 100 mm from the aluminum target. The full width at half maximum of the rocking curve for the AlN(002) peak of X-ray diffraction was approximately 0.2°. SAW characteristics with an interdigital transducer (IDT)/AlN/diamond structure were investigated. The average surface roughness of LiNbO₃ thin films was 5 nm. If the highly oriented LiNbO₃ films are deposited on a diamond substrate, the IDT/LiNbO₃/diamond layered structure will be capable of wide-bandwidth application in SAW devices at high frequencies.     

The properties of free-standing diamond films after plasma high temperature treatment of the rapid heating

The plasma treatment of rapid heating was introduced for increasing fracture strength of free-standing diamond films. The effects of plasma high temperature annealing treatment on surface morphology, internal stress, vacancy defects, impurities and fracture strength of free-standing diamond films were investigated by scanning electron microscopy (SEM), Raman, positron annihilation technique (PAT) and mechanical property testing. It showed that the fracture strength of the diamond films increases up to 70% for lower fracture diamond films with treating temperature (1500-1600 °C). The graphitization in surface and interior of diamond films would be produced by high temperature treatment more than 1700 °C. Fracture strengths of diamond films could be enhanced after high temperature treatment and the main factor of that was compressive stress state in diamond films induced by graphitization. The impurity of N was segregated and integrated with vacancy cluster to become [N-V]⁰ and [N-V]⁻.     

As-deposited LiCoO2 thin film cathodes prepared by rf magnetron sputtering

LiCoO₂ thin films were deposited using radio frequency (rf) magnetron sputtering system on stainless steel substrates. Different rf powers, up to 150 W, were applied during deposition. The as-deposited films exhibited (1 0 1) and (1 0 4) preferred orientation and the nanocrystalline film structure was enhanced with increasing rf power. The film crystallinity was examined using X-ray diffraction, Raman scattering spectroscopy and transmission electron microscopy. The compositions of the films were determined by inductively coupled plasma-mass spectroscopy. The average discharge capacity of as-deposited films is about 59 μAh/(cm² μm) for cut-off voltage range of 4.2 and 3.0 V. From the electrochemical cycling data, it is suggested that as-deposited LiCoO₂ films with a nanocrystalline structure and a favorable preferred orientation, e.g. (1 0 1) or (1 0 4) texture, can be used without post-annealing at high temperatures for solid-state thin film batteries.     

Texture effect on the electrochemical properties of LiCoO2 thin films prepared by PLD

LiCoO₂ thin films were prepared by pulsed laser deposition (PLD) on Pt/Ti/SiO₂/Si (Pt) and Au/MgO/Si (Au) substrates, respectively. Crystal structures and surface morphologies of thin films were investigated by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The LiCoO₂ thin films deposited on the Pt substrates exhibited a preferred (0 0 3) texture with smooth surfaces while the LiCoO₂ thin films deposited on the Au substrates exhibited a preferred (1 0 4) texture with rough surfaces. The electrochemical properties of the LiCoO₂ films with different textures were compared with charge-discharge, dQ/dV, and Li diffusion measurements (PITT). Compared with the (1 0 4)-textured LiCoO₂ thin films, the (0 0 3)-textured thin films exhibited relatively lower electrochemical activity. However, the advantage of the (1 0 4)-textured film only remained for a small number of cycles due to the relatively faster capacity fade. Li diffusion measurements showed that the Li diffusivity in the (0 0 3)-textured film is one order of magnitude lower than that in the (1 0 4)-textured film. As discussed in this paper, we believe that Li diffusion through grain boundaries is comparable to or even faster than Li diffusion through the grains.     

Electroless deposition of transparent conducting and 〈0 0 0 1〉-oriented ZnO films from aqueous solutions

Electroless ZnO deposition on a glass substrate from dissolved oxygen-free aqueous solutions containing Zn(NO₃)₂ and dimethylamineborane (DMAB) was examined to yield ZnO films applicable to a transparent conducting oxide (TCO). Concentration of Zn(NO₃)₂ was optimized in terms of crystal growth orientation and surface morphology using XRD and AFM, and that ranging from 0.065 to 0.075 M was found to provide well 〈0 0 0 1〉-oriented dense ZnO films. The polycrystalline ZnO films deposited with Zn(NO₃)₂ concentration of 0.07 M had a preferred 〈0 0 0 1〉 growth orientation and exhibited high visible transparency. Top-view and cross-sectional FE-SEM images revealed that hexagonal columnar ZnO grains with 200 nm in diameter and 290 nm in length grew almost vertically from a glass substrate. Heat treatment at 723 K under a reductive atmosphere was performed to increase the intrinsic carrier concentration in the ZnO film, and Hall effect measurements revealed low electrical resistivity of 4.7 × 10⁻³ Ω cm.     

Effect of substrate temperature on the structural,electrical, and optical properties of GZO/ZnO films deposited by radio frequency magnetron sputtering

Ga-doped ZnO (GZO)/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering at different substrate temperatures of 100, 200 and 300 °C to investigate the effects of substrate temperature on the structural, electrical, and optical properties of the films. Thicknesses of the GZO and ZnO buffer layer were kept constant at 85 and 15 nm by controlling the deposition times.     

Effect of nickel doping on structural,optical, electrical and ethanol sensing properties of spray deposited nanostructured ZnO thin films

Undoped and nickel (Ni)-doped ZnO thin films were spray deposited on glass substrates at 523 K using 0.1 M of zinc acetate dihydrate and 0.002–0.01 M of nickel acetate tetrahydrate precursor solutions and subsequently annealed at 723 K. The effect of Ni doping in the structural, morphological, optical and electrical properties of nanostructured ZnO thin film was investigated using X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), UV–vis Spectrophotometer and an Electrometer respectively. XRD patterns confirmed the polycrystalline nature of ZnO thin film with hexagonal wurtzite crystal structure and highly oriented along (002) plane. The crystallite size was found to be increased in the range of 15–31 nm as dopant concentration increased. The SEM image revealed the uniformly distributed compact spherical grains and denser in the case of doped ZnO thin films. All the films were highly transparent with average transmittance of 76%. The measured optical band gap was found to be varied from 3.21 to 3.09 eV. The influence of Ni doping in the room temperature ethanol sensing characteristics has also been reported.     

A comparison between chemical and sputtering methods for preparing thin-film silver electrodes for in situ ATR-SEIRAS studies

Stable silver thin films were prepared either by chemical deposition or by argon sputtering on germanium and silicon substrates, respectively, and used as electrodes for in situ infrared spectroscopy experiments with a Kretschmann internal reflection configuration. The spectra obtained for acetate anions adsorbed from neutral solutions showed a noticeable intensity enhancement (SEIRA effect). This enhanced absorption has been related to the surface structure of the films that have been characterized by ex situ STM and in situ electrochemical measurements (lead underpotential deposition, UPD). STM images of the chemically deposited silver films show mean grain sizes ranging from ca. 20 to 90 nm for deposition times between 2 and 20 min, and the absence of flat domains. On the other hand, STM images of the films deposited by argon sputtering show mean grain sizes around 30 nm for a film growth rate of 0.05 nm s⁻¹ and 70 nm for a film growth rate of 0.005 nm s⁻¹. In this latter case, atomically flat domains up to 50 nm wide have been observed. This observation is consistent with a more defined voltammetric profile for lead UPD, that indicates a higher degree of surface order. Moreover, the roughness factor obtained from the charge density involved in lead UPD in the case of the sputtered silver film is lower than that measured for the chemically deposited silver film. All these structural data can be connected with the observations on the effect of deposition conditions of the silver film on the SEIRA effect for adsorbed acetate. Maximum enhancement is observed for chemically deposited films and sputtered films at high deposition rate for which the grain size is around 40-60 nm. The increase of the grain size for the sputtered silver films deposited at decreasing deposition rates can be related to the observed decrease in the SEIRA effect.     

Electrodeposition of PbTe thin films from acidic nitrate baths

Electrodeposition of PbTe thin films from an acidic nitric bath was systematically investigated to understand the kinetics and the effect of electrodeposition conditions on film composition, crystallographic structure, texture and grain size. The electroanalytical studies employed initially with a rotating disk electrode to investigate the kinetics associated with Te, Pb and PbTe electrodeposition. The results indicated that the PbTe thin films were obtained by the underpotential deposition (UPD) of Pb atoms onto the overpotentially deposited Te atoms on a substrate.Based on these studies, PbTe thin films were potentiostatically electrodeposited using e-beam evaporated gold thin films on silicon substrate to investigate the effect of various deposition conditions on film composition and microstructure. The data indicated that the microstructure, composition and preferred film growth orientation of PbTe thin films strongly depended on the applied potential and electrolyte concentration. At −0.12 V, the film was granular, dense, and preferentially oriented in the [1 0 0] direction. At potentials more negative than −0.15 V, the film was dendritic and preferentially oriented in the [2 1 1] direction. A smooth, dense and crystalline film with nearly stoichiometric composition was obtained at −0.12 V from a solution containing 0.01 M HTeO₂⁺, 0.05 Pb²⁺ and 1 M HNO₃.     

Preparation and characteristics of ZnO films on freestanding diamond substrates

In this paper, preferred and fine grained polycrystalline ZnO films were deposited on smooth nucleation surfaces of freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapor deposition. The properties of the ZnO films were characterized by scanning electron microscopy, X-ray diffraction, glancing angle X-ray diffraction, room temperature photoluminescence spectra, and electron probe microanalysis. The results indicate that the morphological, structural, and optical properties of ZnO films are strongly dependent on the deposition procedures, especially the deposition temperature. The Zn/O atomic ratio plays an important role in the optical properties of ZnO films. The experimental results can help us improve our understanding of how to obtain ZnO films with excellent properties deposited on FTDF. The most significant improvements in morphological, structural, and optical properties of ZnO films are obtained by using the proper deposition temperature of 500 °C.     

Electrodeposition of low-stress high magnetic moment Fe-rich FeCoNi thin films

Low-stress high magnetic moment Fe-rich FeCoNi thin films were electrodeposited from acidic chloride baths to investigate the effects of the deposition temperature, solution pH and l-ascorbic acid on film morphology, crystal structure, magnetic properties and film stress. As the deposition temperatures were increased from 23 to 70 °C, the film stress in the FeCoNi films decreased from 260 to 28 MPa at pH 1.5 in the absence of l-ascorbic acid. The film stresses further decreased to approximately 0 MPa when solution pH was increased to 2.15. However, the plating baths became unstable at pH higher than 2.15 because of precipitate formation. On increasing the deposition temperature, the deposit Fe content in the FeCoNi thin films decreased from 83 to 72 atomic percent (at.%) and the Co content increased from 17 to 27 at.%. In the case of the deposit Ni content, it slightly increased with increasing deposition temperature. From the XRD analysis, the change of the preferred planes from the bcc (1 1 0) to bcc (2 0 0) with increasing deposition temperatures was observed. It is believed that the changes in the grain size and the incorporation of impurities during electrodeposition influenced the stress of the FeCoNi films. The presence of l-ascorbic acid enhanced the stability of the baths at high pH meanwhile reducing current efficiencies. With increasing deposit Ni content, magnetic saturation (B_S) and parallel squareness slightly decreased and increased, respectively.     

Preparation and characterization of single crystalline In2O3 films deposited on MgO (110) substrates by MOCVD

Epitaxial indium oxide (In₂O₃) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 °C to 700 °C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In₂O₃ film deposited at 600 °C exhibits the best crystalline quality. A clear epitaxial relationship of In₂O₃ (110)|MgO (110) with In₂O₃ [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In₂O₃ films is about 3.55–3.70 eV.     

Growth of high-quality carbon nanotubes on free-standing diamond substrates

Carbon nanotubes (CNTs) were grown on diamond-coated Si substrates and free-standing diamond wafers to develop efficient thermal interface materials for thermal management applications. High-quality, translucent, free-standing diamond substrates were processed in a 5 kW microwave plasma chemical vapor deposition (CVD) system using CH₄ as precursor. Ni and Ni-9%W-1.5%Fe catalyst islands were deposited to nucleate CNTs directly onto the diamond substrates. Randomly-oriented multi-walled CNTs forming a mat of ∼5 μm thickness and consisting of ∼20 nm diameter tubes were observed to grow in a thermal CVD system using C₂H₂ as precursor. Transmission electron microscopy and Raman analyses confirmed the presence of high-quality CNTs on diamond showing a D/G peak ratio of 0.2-0.3 in Raman spectra.     

Structure, optical and electrical properties of ZnO thin films on the flexible substrate by cathodic vacuum arc technology with different arc currents

ZnO thin ?lms were successfully deposited onto PET substrates prepared by using cathodic arc plasma deposition (CAPD) technique at a low temperature (<75 °C). Their structure, optical and electrical properties were investigated with various arc currents (40, 45, 50 and 55 A). ZnO (0 0 2) peak was clearly observed, and increased as the arc current increased from 40 A to 55 A. The calculated average crystallized sizes were around 15.9-17.7 nm. The films have an average transmittance over 85% in the visible region, and calculated values of the band gap around 3.33-3.31 eV with increase of the arc current. It was also found that a slight blue shift of optical transmission spectra was observable when decreasing the arc current. The deposited ZnO films had the lowest resistivity; about 3 × 10⁻³ Ω cm for the ZnO ?lm with the arc current of 40 A.     

Superconductivity in heavily B-doped diamond layers deposited on highly oriented diamond films

We deposited a [100]-oriented B-doped diamond layer by three methods to clarify the effects of film morphology on the transition from metallic to superconducting diamond. Heavily B-doped [100]-oriented diamond layers were deposited on [first method] undoped polycrystalline diamond films with [111] faces, [second method] highly oriented undoped diamond (HOD) thin films with a pyramidal surface, and [third method] thick undoped HOD films with a pyramidal surface. We confirmed that the B-doped layer in the third method was oriented in the [100] direction by scanning electron microscopy (SEM). The highest transition temperatures were T_c(onset) = 5.0 K and T_c(zero) = 3.1 K for the B-doped layer deposited on a thick HOD film with a pyramidal surface under a zero magnetic field. By contrast, T_c(onset) was 4.1 K for a heavily B-doped diamond layer deposited on a thin HOD film with a pyramidal surface, and was 3.9 K for a heavily B-doped diamond layer deposited on an undoped polycrystalline diamond film. These differences in T_c for our samples are affected by disorder and effective hole-carrier doping in each sample. Using the third method, we successfully deposited a high-quality B-doped [100] layer in three steps: (first step) depositing a [100] HOD film on a Si [100] substrate, (second step) depositing an HOD film with a pyramidal surface, and (third step) depositing a [100]-oriented B-doped layer. The change in the electronic states due to the B-doping of diamond films and the film morphology were investigated by x-ray photoelectron spectroscopy (XPS) measurements and band calculations.