Synthesis and Magnetic Properties of L0.5Sr0.5Mn0.5M0.5O3 (L = Y, Pr; M = Cu, Ru)

A new Mn-containing material with nominal composition L_0.5Sr_0.5Mn_0.5M_0.5O₃ (L = Y or Pr; M = Cu or Ru), as well as Y_0.5Sr_0.5MnO₃ for comparison, were synthesized. The results of the XRD and EDX analyses show that the obtained samples are single-phased and isostructural, with L_1–xA_xMnO₃. The L_0.5Sr_0.5Mn_0.5Cu_0.5O₃ material displays a PM behavior down to 8 K where paramagnetic–antiferromagnetic transition begins. The Pr_0.5Sr_0.5Mn_0.5Cu_0.5O₃ sample has a broad transition at 210 K and a magnetoresistance of 34% at 128 K. The Pr_0.5Sr_0.5Mn_0.5Ru_0.5O₃ material has a paramagnetic–ferromagnetic transition beginning at 330 K and a ferromagnetic–antiferromagnetic one at about 160 K. The obtained value of T _c is the highest for the Pr-containing manganites. The roles of Pr/Sr ratio, anisotropy, and intergranular effects in the samples are discussed.     

Magnetoelectric and dielectric properties of Ni0.5Cu0.5Fe2O4–Ba0.5Pb0.5Ti0.5Zr0.5O3 ME composites

The (x) Ni_0.5Cu_0.5Fe₂O₄ + (1−x) Ba_0.5Pb_0.5Ti_0.5Zr_0.5O₃ ME composites have been synthesized by a standard ceramic method. The presence of single phase in x = 0 and x = 1 as well as two phases in x = 0.15, 0.30 and 0.45 composites has been confirmed by XRD. The dielectric constant (ε′) and dielectric loss (tan δ) have been studied as a function of temperature and frequency. These composite materials exhibit maximum dielectric constant with a variation of frequency and temperature. The composite 15% Ni_0.5Cu_0.5Fe₂O₄ + 85% Ba_0.5Pb_0.5Ti_0.5Zr_0.5O₃ had the highest magnetoelectric voltage coefficient of 0.248 mV/cm Oe at room temperature among the studied composites.     

Dark-red-emitting CdTe0.5Se0.5/Cd0.5Zn0.5S quantum dots: Effect of chemicals on properties

CdTe_0.5Se_0.5/Cd_0.5Zn_0.5S core/shell quantum dots (QDs) with a tunable photoluminescence (PL) range from yellow to dark red (up to a PL peak wavelength of 683 nm) were fabricated using various reaction systems. The core/shell QDs created in the reaction solution of trioctylamine (TOA) and oleic acid (OA) at 300 °C exhibited narrow PL spectra and a related low PL efficiency (38%). In contrast, the core/shell QDs prepared in the solution of 1-octadecene (ODE) and hexadecylamine (HDA) at 200 °C revealed a high PL efficiency (70%) and broad PL spectra. This phenomenon is ascribed that the precursor of Cd, reaction temperature, solvents, and ligands affected the formation process of the shell. The slow growth rate of the shell in the solution of ODE and HDA made QDs with a high PL efficiency. Metal acetate salts without reaction with HDA led to the core/shell QDs with a broad size distribution.     

Positive delayed photoconductivity in double heterostructures Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As of the p-type

Positive delayed photoconductivity was observed for the first time in double p-type heterostructures Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5 As upon exposure to the radiation of a red light-emitting diode. In this state, the concentration and mobility of two-dimensional holes are increased 1.5 and 1.7 times, respectively, as compared to the initial dark values. The delayed photoconductivity can be explained by the presence of deep electron traps located above the Fermi level at the inverted heterointerface.     

Preparation, characterization and microwave absorption properties of polyaniline/Co0.5Zn0.5Fe2O4 nanocomposite

The polyaniline (PAni)/Co_0.5Zn_0.5Fe₂O₄ nanocomposite was prepared by an in situ polymerization in an aqueous solution. The products were characterized by Fourier transform infrared (FT-IR) spectrometer, ultraviolet-visible (UV-vis) spectrometer, X-ray diffraction (XRD) and transmission electron microscope (TEM). The average particle size of the PAni/Co_0.5Zn_0.5Fe₂O₄ was estimated to be about 70 nm by TEM. The reflection loss (dB) of the nanocomposite was measured at different microwave frequencies in X-band (8.2-12.4 GHz), U-band (12.4-18 GHz) and K-band (18-26.5 GHz) by radar cross-section (RCS) method according to the national standard GJB-2038-94. The results showed the reflection loss of the PAni/Co_0.5Zn_0.5Fe₂O₄ nanocomposite was higher than that of the PAni. The maximum reflection loss of the PAni/Co_0.5Zn_0.5Fe₂O₄ nanocomposite was about −39.9 dB at 22.4 GHz with a bandwidth of 5 GHz (full frequency width at about a half of the peak response). In conclusion, this sample is a good microwave shielding and absorbing materials at higher frequency.     

Electron and positron energy distributions in Cd0.5Mn0.5Te alloy

We calculated the electron and positron band structure for Cd_0.5Mn_0.5Te alloy and presented electron and positron charge densities as a function of position in the unit cell. The densities of states both electronic and positronic at different points of reciprocal space were performed. In these calculations, we used the empirical pseudopotential method and the virtual crystal approximation coupled with the independent particle model.     

脉冲激光沉积Ba0.5Sr0.5TiO3、Pb0.5Ba0.5TiO3和Pb0.5Sr0.5TiO3薄膜及其介电性质

采用脉冲激光沉积法,在Pt／Ti／SiO2／Si基底上分剐制备厚度为350nm的Ba0.5Sr0.5TiO3(BST)、Pb0.5Ba0.5TiO3(PBT)和Pb0.5Sr0.5TiO3(PST)薄膜并研究了它们的介电性质。XRD显示,在相同的制备条件下三者具有不同的择优取向,PST具有(110)择优取向,PBT具有(111)择优取向,而BST则是混合取向。SEM显示三者样品表面均匀致密,颗粒尺寸大约在50nm至150nm之间。PST与BST、PBT相比有更高的介电常数,在频率为10kHz时,分别为874、334和355,而损耗都较低,分别为0．0378、0．0316和0．0423,同时PST漏电流也是最小的。测量薄膜的C-V特性扣铁电性能表明室温下BST呈现的是顺电相,PST和PBT则呈铁电相。本文也测量了薄膜在不同频率下的介电温度特性,BST、PBT和PST均表现出频率弥散现象,即随着频率的降低．居里温度降低而介电常数会升高。并测得BST和PST的居里温度分剐为-75和150℃。而PBT的居里温度在250℃以上。本文研究表明：与BST相比较,PBT的介电常数与之相近,漏电流较大;而PST具有高介电常数,较小的漏电流和较大的电容-电压调谐度,在相关半导体器件中的应用将有很大的潜力。     

The synthesis of lead-free ferroelectric Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 thin films by sol-gel method

(1 − x)Bi_0.5Na_0.5TiO₃-xBi_0.5K_0.5TiO₃ [BNT-BKT-100x] thin films have been successfully deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel process together with rapid thermal annealing. A morphotropic phase boundary (MPB) between Bi_0.5Na_0.5TiO₃ and Bi_0.5K_0.5TiO₃ was determined around x ∼ 0.15. Near the MPB, the film exhibits the largest grain size, the highest ε value (360) and the largest P_r value (13.8 μC/cm²). The BNT-BKT thin film system is expected to be a new and promising candidate for lead-free piezoelectric applications.     

Heat capacity, thermopower and magnetoresistance effects in multiferroic La0.5Bi0.5Mn0.5Fe0.5O3

We have carried out systematic investigations in perovskite multiferroic La_0.5Bi_0.5Mn_0.5Fe_0.5O₃ by means of X-ray diffraction, magnetisation, electrical resistivity, thermoelectric and heat capacity measurements. The magnetic behaviour of this composition is rather complex, though the magnetisation curve seems to be like a weak ferromagnetic material. However, there is no clear evidence of λ-anomaly in the heat capacity data down to 2 K, yet this behaviour corroborate the trends of semiconducting silicon below room temperature. The sensitivity of magnetic behaviour to the iron-manganese ratio is also demonstrated. In presence of an external field of 7 T, it exhibits a magnetoresistance of ?5 % at 130 K. The thermoelectric value increases linearly with decreasing temperature, and at room temperature the value is +85 μV/K, which is associated with the p-type polaronic conductivity.     

High temperature oxidation behavior of Ti0.5Al0.5N coating and Ti0.5Al0.4Si0.1N coating

Good oxidation resistance of hard coatings is important for cutting tools. Ti_0.5Al_0.5N coating and Ti_0.5Al_0.4Si_0.1N coating were deposited by cathodic arc evaporation and their oxidation behavior at 850 °C, 900 °C and 1000 °C was compared. The effect of Si addition on the oxidation resistance of Ti_0.5Al_0.4Si_0.1N was investigated. Results show that the oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating at 850-1000 °C is superior to Ti_0.5Al_0.5N coating. The improved oxidation resistance of Ti_0.5Al_0.4Si_0.1N coating can be ascribed to the combined action of Al₂O₃ and SiO₂ barrier layer, the reduction of columnar structure and the refinement of grains. In particular, Si addition increases the diffusion coefficient of Al and promotes the preferential formation of Al₂O₃ barrier layer.     

稀土氮化物ScN、YN微晶的制备与表征

利用直流电弧等离子体方法制备出稀土氮化物ScN、YN微晶, 这是一种快速、低成本、高产量的新方法, 可用来制备稀土金属氮化物。结构物性表征和能谱成分分析结果表明, 所制备的ScN晶体为满足化学计量比的单晶, 而YN晶体为非化学计量比的多晶, 其中Y的含量高于N。综合XRD、EDS、HRTEM和PL结果分析表明, YN晶体主要由大量随机取向的单晶颗粒组成, 单晶颗粒间分布着一些非晶的金属Y, 光谱结果分析表明YN中存在大量的N空位。此外, 对样品的微观结构形成机理进行了系统分析, 由于Y族金属氮化物中有限组分较高的解离压力以及产物在生长过程中经历较高的淬火速率(10³ K/s), 导致YN解离而形成的Y金属团簇的无序排列, 进而使其在冷却过程中形成了非晶结构。     

Structural and magnetic properties of LaFe0.5Cr0.5O3 studied by neutron diffraction, electron diffraction and magnetometry

The structural and magnetic properties of the perovskite type compound LaFe_0.5Cr_0.5O₃ have been studied by temperature dependent neutron powder diffraction and magnetization measurements. Rietveld refinement of the neutron diffraction data shows that the compound crystallizes in an orthorhombic perovskite structure with a random positioning of the Fe and Cr cations at the B sublattice. The magnetic structure at 10 K is a collinear antiferromagnetic one with the magnetic moment per site being equal to 2.79(4) μ_B. Magnetisation measurements confirm the overall antiferromagnetic behaviour. Moreover, it indicates a weak uncompensated magnetic moment close to the transition temperature T_N ≈ 265 K. This moment can be described by a magnetic cluster state, which remains up to 550 K. Electron diffraction patterns along with high-resolution transmission electron microscopy images reveal that the crystallites are composed by domains of different orientation, which share the same cubic perovskite sub-cell reflections.     

Crystal and magnetic study of the disordered perovskites Ca(Mn0.5Sb0.5)O3 and Ca(Fe0.5Sb0.5)O3

We have investigated the double perovskites Ca₂MSbO₆ (M = Mn, Fe) that have been prepared by solid-state reaction (M = Fe) and wet chemistry procedures (M = Mn). The crystal and magnetic structures have been studied from X-ray (XRD) and neutron powder diffraction (NPD) data. Rietveld refinements show that the crystal structures are orthorhombic (space group Pbnm) with complete disorder of M and Sb cations, so the formula should be rewritten as Ca(M_0.5Sb_0.5)O₃. Due to this disorder no evidences of Jahn-Teller distortion can be observed in the MnO₆ octahedra of Ca(Mn_0.5Sb_0.5)O₃, in contrast with the ordered double perovskite Sr₂MnSbO₆. Ca(Fe_0.5Sb_0.5)O₃ behaves as an antiferromagnet with an ordered magnetic moment for Fe³⁺ of 1.53(4)μ_B and a propagation vector k = 0, as investigated by low-temperature NPD. The antiferromagnetic ordering is a result of the high degree of Fe/Sb anti-site disorder of the sample, which originates the spontaneous formation of Fe-rich islands, characterized by the presence of strong Fe-O-Fe antiferromagnetic couplings with enough long-range coherence to produce a magnetic contribution perceptible by NPD. By contrast, the magnetic structure of Ca(Mn_0.5Sb_0.5)O₃ cannot be observed by low-temperature NPD because the magnitude of the ordered magnetic moments is below the detection threshold for neutrons.     

Synthesis and evaluation of Zr0.5Ti0.5B2 solid solution

Boride ceramics are useful materials because of their high strengths, hardness and melting points, which allow them to be used as high-temperature structural materials. In this study, sintered bodies of a solid solution of ZrB₂-TiB₂ system were prepared using hot pressing (HP) and spark plasma sintering (SPS). The sintering behavior was evaluated, and the effect of pulverization on sinterability and reactivity was examined using a Nanomizer. The combination of SPS processing at 2200 °C and pulverization yielded a nearly single-phase Zr_0.5Ti_0.5B₂ solid solution having a relative density of 95%.     

Purification and crystal growth of LiY0.5Er0.5F4 crystals

The purification procedure of the LiY_0.5Er_0.5F₄ compound for Bridgman-Stockbarger and Czochralski single crystal growth has been investigated. Yttrium and rare-earth oxyfluorides were found to form during hydrofluoric heat-treatment of the starting fluoride mixture. Optically clear single crystals of purified LiY_0.5Er_0.5F₄ were grown by both Bridgman-Stockbarger and Czochralski methods. The stoichiometry was investigated by magnetic susceptibility measurements and the Er content in the single crystals grown by both Bridgman-Stockbarger and Czochralski methods were found to fit stoichiometry within the measurement error. No free (OH)^? ions were found by infrared absorption spectroscopy.     

Effect of V2O5 on the Sintering Behavior, Microstructure, and Electrical Properties of (Na/sub 0.5/K/sub 0.5/)NbO/sub 3/Ceramics

Well-sintered (Na_0.5K_0.5)NbO_3-x mol% V₂O₅ ceramics (abbreviated as NKN-V) with fine electrical properties were successfully prepared by conventional solid-state reaction through the careful control of processing conditions. The sintering behavior, phase structure, and electrical properties of the V₂O₅-doped NKN ceramics were investigated. Results show that when the V₂O₅ content is 0.6 mol%, the NKN ceramics attained the maximum density of 4.46 g/cm³ (about 98.9% of the theoretical density) at 1060degC, and therefore possessed enhanced electrical properties. But when the V₂O₅ content continued increasing, the density decreased. The secondary phase (Na₂V₆O₁₆) could be detected by XRD analysis in all samples except x = 0 mol%. The Curie temperature of the NKN-based materials was found to decrease with the increase of V₂O₅. The dielectric properties of NKN ceramics doped with 0.6 and 0.9 mol% V₂O₅ were better than that of pure NKN ceramics. In addition, annealing treatment was proved to be an effective technique for improving dielectric properties and reducing the leakage current density.     

Site symmetry of Yb in In0.5Ga0.5P

The site symmetry of Yb³⁺ in In_0.5Ga_0.5P grown by liquid phase epitaxy has been investigated using a polarized luminescence spectroscopic technique. The site symmetry of indium in In_0.5Ga_0.5P was lowered from T_d to C_2v resulting from substitution of indium by ytterbium. The lowering symmetry was confirmed by the spectroscopic observation of the splits of Γ₈ levels of T_d in C_2v symmetry. The substitutional site symmetry of Yb³⁺ in In_0.5Ga_0.5P, i.e. Yb_ln³⁺, was revealed as C_2v.     

Processing, dielectric properties and impedance characteristics of Na0.5Bi0.5Cu3Ti4O12 ceramics

Na_0.5Bi_0.5Cu₃Ti₄O₁₂ (NBCTO) ceramics were prepared by conventional solid-state reaction method. The phase structure, microstructure and dielectric properties of NBCTO ceramics sintered at various temperatures with different soaking time were investigated. Pure NBCTO phase could be obtained with increasing the temperature and prolonging the soaking time. High dielectric permittivity (13,495) and low dielectric loss (0.031) could be obtained when the ceramics were sintered at 1000 °C for 7.5 h. The ceramics sintered at 1000 °C for 7.5 h also showed good temperature stability (−4.00 to −0.69%) over a large temperature range from −50 to 150 °C. Complex impedances results revealed that the grain was semiconducting and the grain boundaries was insulating. The grain resistance (R_g) was 12.10 Ω cm and the grain boundary resistance (R_gb) was 2.009 × 10⁵ Ω cm when the ceramics were sintered at 1000 °C for 7.5 h.     

Synthesis and high-pressure sintering of (W0.5Al0.5)C

A new solid solution of Al in WC, which can be expressed by the chemical formula (W_0.5Al_0.5)C, has been synthesized directly by reaction milling (RM) of a W_0.5Al_0.5 alloy and the proper amount of carbon. The total reaction time is about 50 h. The ESEM photograph shows that the prepared (W_0.5Al_0.5)C powders are spherical, and the average particle size is about 40 nm. (W_0.5Al_0.5)C has been identified to crystallize in the hexagonal space group P-6m2 (No.187) and belongs to the WC structure type. The lattice parameter of (W_0.5Al_0.5)C is calculated to be a = 2.908(1) Å, c = 2.836(1) Å. This nanocrystalline powder can be well sintered at the high temperature (1600 °C) under the high pressure (4.5 GPa), and the relative density reaches 99.1%. The hardness of the sintered (W_0.5Al_0.5)C is tested to be 1500 ± 50 kg mm⁻², while the density is about 9.417 ± 0.003 g cm⁻³, which is far lower than that of WC.