Nitrogen-doped ZnO thin films grown on glass substrates by atomic layer deposition using NH3 as a doping source

Nitrogen-doped ZnO (ZnO:N) films were successfully grown on glass substrates by atomic layer deposition (ALD). NH3 was used as a doping source, and the substrate temperature was relatively low (90 approximately 210 degrees C). The main focus of the study was to report on the effect of the temperature on the electrical properties (e.g., carrier concentration, mobility, etc.) of the grown ZnO:N films. At all temperatures, the carrier was found to be n-type, and its electron concentration did not show much variation within the values between 3 x 10(16) and 6 x 10(16) cm-3; the mobility increased with the temperature (1 cm2/Vs at 110 degrees C, 5 cm2/Vs at 190 degrees C); and the resistivity decreased with the temperature (203 omegacm at 110 degrees C, 21 omegacm at 190 degrees C). The electrical properties are discussed in relation with the nitrogen concentration, crystallinity, crystal orientation, grain size, and surface morphology. The nitrogen concentration in the ZnO:N films was constant at all temperatures (approximately 2.5 atomic percent); the crystallinity and crystal orientation improved with the temperature; and the mean grain size increased with the temperature (13.2 nm at 110 degrees C, 35.3 nm at 190 degrees C). The results for the ZnO:N films were also compared with the results for the undoped ZnO films.     

Atomically controlled processing in silicon-based CVD epitaxial growth

One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si(1-x)Gex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si(1-x)Gex(100) surface is achieved at temperatures below 500 degrees C. N atoms of about 4 x 10(14) cm(-2) are buried in the Si epitaxial layer within about 1 nm thick region. In the Si(0.5)Ge(0.5) epitaxial layer, N atoms of about 6 x 10(14) cm(-2) are confined within about 1.5 nm thick region. The confined N atoms in Si(1-x)Gex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(1-x)Gex(100) with P atomic amount of below about 4 x 10(14) cm(-2) using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si(1-x)Gex/Si heterointerface. These results open the way to atomically controlled technology for ULSIs.     

Electron beam annealing of Fe+ implanted Si nanostructures

Silicon nanostructures (nanowhiskers) have been formed at surface densities approximately 10(9) cm-2 by electron beam annealing (EBA) prior to the implantation of 7 keV Fe+ ions to fluences from 1 x 10(13) - 4 x 10(15) Fe+ cm(-2). A second EBA step is then applied to relieve implantation-induced stresses. RBS analysis shows that the implanted Fe remains close to the surface. AFM characterisations of the implanted nanowhiskers before and after the final EBA step are summarised in graphs of height versus surface density. In a striking result it is shown that the nanowhiskers not only survive processing but also grow significantly. For example, at the highest fluence of 4 x 10(15) Fe+ cm(-2), the average height more than doubles: the increases are from 5.0 nm to 6.5 nm under implantation and from 6.5 nm to 11.8 nm under EBA. In addition there is a significant increase in surface density from an initial value of 1.6 x 10(9) cm(-2) to 4.3 x 10(9) cm(-2). These results highlight the feasibility of doping Si surface nanostructures with magnetic ions to fabricate Si devices for spin-dependent enhanced field emission.     

聚酰亚胺薄膜的制备及其摩擦学性能研究

通过浸渍得到了聚酰胺酸薄膜,采用适当的方法对薄膜进行处理之后再进行热亚胺化得到聚酰亚胺薄膜.用DF-PM型动静摩擦系数精密测定装置考察所得到的聚酰亚胺薄膜的摩擦学性能.用SEM考察了聚酰亚胺薄膜的磨痕形貌和对偶Si3N4陶瓷球表面的转移膜的形貌.结果表明,聚酰亚胺薄膜在与Si3N4陶瓷球对磨时,由于在摩擦过程中,聚酰亚胺能够在对偶面上形成均匀的并且低剪切强度的转移薄膜,因此表现出了优异的减摩与抗磨性能.聚酰亚胺薄膜的摩擦和磨损行为主要取决于薄膜的制备条件.     

Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

Copper nitride thin film was deposited on glass substrates by reactive DC （direct current） magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were （111） and （200） at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu （111） peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality （111） Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.     

Depth profiling of peptide films with TOF-SIMS and a C60 probe

A buckminsterfullerene ion source is employed to characterize peptide-doped trehalose thin films. The experiments are designed to utilize the unique sputtering properties of cluster ion beams for molecular depth profiling. The results show that trehalose films with high uniformity can be prepared on Si by a spin-coating technique. Bombardment of the film with C60+ results in high quality time-of-flight secondary ion mass spectrometry spectra, even during ion doses of up to 3 x 10(14) ions/cm2. This result is in contrast to atomic bombardment experiments in which the dose of incident ions must be kept below 10(12) ions/cm2 so as to retain mass spectral information. Moreover, since the films are of uniform thickness, it is possible to depth-profile through the film and into the Si substrate. This experimental protocol allows the yield of trehalose molecular equivalents and the degree of interface mixing to be evaluated in detail. When doped with a variety of small peptides up to a molecular weight of m/z 500, we find that the peptide molecular ion intensity remains stable under continuous C60+ bombardment, although some decrease in intensity is observed. The results are interpreted in terms of a model whereby the high trehalose yield and low damage depth of the C60 projectile combine to prevent damage accumulation. In general, the peptide-trehalose system provides a valuable model for evaluating the parameters that lead to effective 3-dimensional characterization of biomaterials.     

Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

1. Introductiontransparent conductive indium tin oxide (ITO)films have been extensively used in a variety of electronic and opto--electronic applications because oftheir high transmission in the visible range, high infrared (IR) reflection, and low electrical resistivity.A variety of deposition techniques have been appliedto fabricate ITO films such as CVD, spray pyrolysisand sputteringll'2]. However, sputtering is the mostextensively used technique especially in industry. Recelltly, targe…     

Influences of Ti film thickness on electrochemical properties of Si/Ti/Cu film electrodes

Si and Si/Ti films were fabricated on a Cu current collector (substrate) using the DC sputtering system. The Ti film as a buffer layer was inserted between the Si film and the Cu current collector. Their structural and electrochemical properties were investigated with various Ti film thicknesses of 20-90 nm. The Si and Ti films deposited on a polycrystalline Cu substrate were amorphous. The Si/Ti/Cu film electrode exhibited better electrochemical properties than the Si/Cu electrode in terms of capacity, charge-discharge efficiency, and cycleability. In the Si/Ti/Cu electrode, the film electrode with a 55 nm Ti film thickness showed the best electrochemical properties: 367 microA h/cm2 initial capacity, 91% efficiency, and 50% capacity retention after 100 cycles. These good electrochemical properties are attributed to the enhanced adhesion between the Si and Ti films. Additionally, the modified surface morphology of Si film with a cluster structure could withstand the lateral volume change during the charge-discharge process.     

Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering

Thin silicon nitride (Si(1_x)N(x)) films were synthesized without substrate heating by means of reactive argon-ion sputtering of either silicon or a silicon nitride target in the 1000-1500-eV energy range at a nitrogen partial pressure of 1.3 × 10(-2) Pa and with simultaneous nitrogen ion-assisted bombardment in the 300-500-eV low energy range. The extinction coefficient and refractive index of the films were directly dependent on the N(+) ion-to-atom arrival ratio, assisted ion energy, film growth rate, and indicated a correlation with film stoichiometry and disorder. Si(3)N(4) films were obtained for N(+) ion/Si atom arrival ratios from 0.6 to 1.7 and for different Si:N atom arrival rates and had a refractive index as high as 2.04 (633 nm) and a low hydrogen content as indicated by IR spectra.     

Photocatalytic reduction of NO with NH3 using Si-doped TiO2 prepared by hydrothermal method

A series of Si-doped TiO2 (Si/TiO2) photocatalysts supported on woven glass fabric were prepared by hydrothermal method for photocatalytic reduction of NO with NH3. The photocatalytic activity tests were carried out in a continuous Pyrex reactor with the flow rate of 2000mL/min under UV irradiation (luminous flux: 1.1x10(4)lm, irradiated catalyst area: 160cm2). The photocatalysts were characterized by X-ray diffraction (XRD), BET, X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FT-IR) spectrophotometer, transmission electron microscopy (TEM), photoluminescence (PL) and temperature-programmed desorption (TPD). The experiment results showed that NO conversion on Si/TiO2 at 323K could exceed 60%, which was about 50% higher than that on Degussa P25 and pure TiO2. With the doping of Si, photocatalysts with smaller crystal size, larger surface area and larger pore volume were obtained. It was also found that Ti-O-Si bands were formed on the surface of Si/TiO2 and that the surface hydroxyl concentration was greatly increased. As a result, total acidity and NH3 chemisorption amount were enhanced for Si/TiO2 leading to its photocatalytic activity improvement.     

Ta基纳米薄膜扩散阻挡特性的比较研究

采用直流磁控溅射方法在p型(100)Si衬底上制备了Cu/Ta、Cu/Ta-N和Cu/Ta-Al-N复合膜,并对薄膜样品进行了卤钨灯快速热退火.用四探针电阻测试仪(FPP)、AFM、SEM、Alpha-step IQ台阶仪和XRD等分析测试方法对样品的形貌结构与特性进行了分析表征,并对N和Al的掺杂机理进行了讨论.实验结果表明,Ta、Ta-N和Ta-Al-N膜层的Cu扩散阻挡特性逐渐增强,Ta/Si界面上的反应和Cu通过多晶Ta膜扩散到Si底并形成Cu3Si共同导致了Ta阻挡层的失效,而Cu通过Ta-N和Ta-Al-N结晶后产生的晶界扩散到Si底并形成Cu3Si是两者失效的唯一机制.N的掺入促进了非晶薄膜的形成且有利于消除界面反应,而Al的掺入将进一步提高薄膜的结晶温度和热稳定性.     

Irradiation induced effects on Ni3N/Si bilayer system

The irradiation effect in Ni₃N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10¹⁴ ions/cm² was investigated at room temperature. Grazing incidence X-ray diffraction determined the formation of Ni₂Si and Si₃N₄ phases at the interface. The roughness of the thin film was measured by atomic force microscopy. X-ray reflectivity was used to measure the thickness of thin films. X-ray photoelectron spectroscopy has provided the elemental binding energy of Ni₃N thin films. It was observed that after irradiation (Ni 2p_3/2) peak shifted towards a lower binding energy. Optical properties of nickel nitride films, which were deposited onto Si (100) by ion beam sputtering at vacuum 1.2 × 10⁻⁴ torr, were examined using Au ions. In-situ I–V measurements on Ni₃N/Si samples were also undertaken at room temperature which showed that there is an increase in current after irradiation.     

Patterning of TiO2 particles on poly(dimethyl siloxane) films by using proton irradiation and liquid-phase deposition process

Micropatterning of titanium dioxide (TiO2) on the surface of thin poly(dimethyl siloxane) (PDMS) films was described by means of proton irradiation and liquid-phase deposition (LPD) techniques. The surface of thin PDMS films was irradiated with accelerated proton ions through a pattern mask in the absence or presence of oxygen in order to create hydrophilically/hydrophobically patterned surfaces. The results of the surface analysis revealed that the PDMS films irradiated at the fluence of 1 x 10(15) ions cm-2 in the presence of oxygen showed the highest hydrophilicity. The LPD of TiO2 particles on the patterned PDMS film surface showed a selective deposition of TiO2 on the irradiated regions, leading to well defined TiO2 micropatterns. The crystal structure of the formed TiO2 films was found to be in an anatase phase by X-ray diffraction analysis. This process can be applied for patterning various metal and metal oxide particles on a polymer substrate.     

Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone

We examined the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to tetrakis(ethylamino)silane [Si(NHC2H5)4] and O3. The growth kinetics of silicon oxide films was examined at substrate temperatures ranging from 325 to 514 degrees C. The deposition was governed by a self-limiting surface reaction, and the growth rate at 478 degrees C was saturated at 0.17 nm/cycle for Si(NHC2H5)4 exposures of 2 x 10(6) L (1 L = 10(-6) Torr x s). The films deposited at 365-404 degrees C exhibited a higher deposition rate of 0.20-0.21 nm/cycle. However, they contained impurities, such as carbon and nitrogen, and showed poor film qualities. The concentration of impurities decreased with increasing substrate temperature. It was found that the films deposited in the high-temperature regime (478-514 degrees C) showed excellent physical and electrical properties equivalent to those of LPCVD films.     

Structural and chemical stability of Ta–Si–N thin film between Si and Cu

Thermal stability and barrier performance of reactively sputter deposited Ta–Si–N thin films between Si and Cu were investigated. RF powers of Ta and Si targets were fixed and various N₂/Ar flow ratios were adopted to change the amount of nitrogen in Ta–Si–N thin films. The structure of the films are amorphous and the resistivity increases with nitrogen content. After annealing of Si/Ta–Si–N(300 Å)/Cu(1000 Å) structures in Ar–H₂ (10%) ambient, sheet resistance measurement, X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and Auger electron spectroscopy (AES) were employed to characterize barrier performance. Cu₃Si and tantalum silicide phase are formed at the same temperature, and the interdiffusion of Si and Cu occurs through the local defect sites. In all characterization techniques, nitrogen in the film appears to play an important role in thermal stability and resistance against Cu diffusion. A 300 Å thick Ta₄₃Si₄N₅₃ barrier shows the excellent barrier property to suppress the formation of Cu₃Si phase up to 800°C.     

Effect of Ni7+ Ion Irradiation on Structure and Ammonia Sensing Properties of Thermally Oxidized Zinc and Indium Films

ZnO and In2O3 films were prepared by thermal oxidation of vacuum deposited zinc and indium films, respectively onto the glass substrate at 30 C. The fabricated films have been irradiated with 100-MeV Ni7+ ions at different fluences ranging from 5×1011 to 5×1013 ions/cm2. The structural and gas sensing properties of pristine and irradiated films have been discussed. X-ray diffraction (XRD) pattern of pristine and irradiated films reveal that the films are polycrystalline in nature and crystallinity increases after irradiation. In this study, highly porous In2O3 nanorods evolved when being irradiated at a fluence of 5×1013 ions/cm2 while ZnO film shows decrease in number of nanowires. The ammonia sensing performance of the Ni7+ irradiated In2O3 films shows an improvement as compared to its pristine counterpart.     

Application of disorganized monolayer films on gold electrodes to the prevention of surfactant inhibition of the voltammetric detection of trace metals via anodic stripping of underpotential deposits: detection of copper

Development of an approach to prevention of electrode surface fouling by surfactants in samples is demonstrated. Spontaneously adsorbed monolayer systems employing short alkyl chains and bulky end groups are used to form porous disorganized monolayers on gold electrodes. Detection of copper by stripping of underpotential deposits formed at electrodes modified with disorganized films of mercaptoethanesulfonate (MES), mercaptopropanesulfonate, mercaptoacetic acid, and mercaptopropanoic acid was possible, and to a much lesser extent at aminoethanethiol and L-cysteine films. Use of short deposition times in conjunction with linear sweep anodic stripping voltammetry allowed detection of Cu2+ ions down to 1 x 10(-6) M in sulfuric acid solution, using underpotential deposition as the deposition step of the procedure. Calibration graphs were linear in the concentration range (1-80) x 10(-6) M Cu2+ using 15-s deposition at 0.00 V versus Ag/AgCl. The surfactants Tween 20, Tween 80, and Triton X-100 were found to have no affect on detection of Cu2+ ions in the calibration curve concentration range using MES-modified gold electrodes, whereas at unmodified gold electrodes very severe attenuation of the detection capability was manifested. The average slope for all calibration curves at the MES-modified electrode in the absence and presence of the surfactants at two different concentration levels was 0.0710 +/- 0.0024 microA microM(-1); in contrast, the slope of the calibration line at uncoated gold electrodes in the presence of surfactant was 0.0268 microA microM(-1). These results indicate the excellent ability of a disorganized, porous monolayer for prevention of fouling of the electrode surface by the surfactants.     

Bias sputtered Ta modified diffusion barrier in Cu/Ta(Vb)/Si(111) structures

In this investigation, we have fabricated Ta(V_b)/Si(111) and Cu/Ta(V_b)/Si(111) systems using a DC bias sputtering technique at high Ar pressure (100 mTorr). For Ta/Si(111) system, tantalum layer was formed under various bias voltages ranging from 0 to −150 V. The films were characterized by Rutherford backscattering spectrometry (RBS), scanning electron microscopy (SEM) and four-point probe sheet resistance measurements (R_s). From electrical resistivity and SEM data, a minimum resistivity (99 μΩ cm) and well surface morphology at an optimum bias voltage (V_b=−50 V) was obtained for the Ta(V_b)/Si(111) system. The Ta films deposited under these conditions with 50 nm thickness are then used as a diffusion barrier in the Cu/Ta(V_b)/Si(111) multilayer structure. According to our RBS, SEM and R_s analysis, the Ta barrier layer formed under the controlled bias sputtering at high Ar pressure has demonstrated an improved Ta structure with excellent thermal stability up to 650°C for the Cu/Ta(V_b)/Si(111) system annealed in N₂ environment for 30 min. Formation of TaSi₂ was observed at 700°C after the barrier failure using RBS spectra.     

Hydroxyapatite/Bioactive Glass Films Produced by a Sol–Gel Method: In Vitro Behavior

Hydroxyapatite (HA) and HA/bioactive glass (49S) films were deposited on Si(100) substrates by a sol–gel dip‐coating method. The microstructure and in vitro bioactivity of the films were investigated by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and X‐ray photoelectron spectroscopy (XPS). Polycrystalline HA and amorphous bioactive glass films were obtained after annealing at 600 and 400 °C, respectively. The crystallization temperature of HA was determined to be around 568 °C. The surfaces of the HA films were covered with an apatite layer consists of spherulites formed by nanosized needle‐like aggregates after the soaking in simulated body fluid (SBF) for 10 days, while amorphous HA/bioactive glass surface was covered with larger spherical crystallites. Both XPS and EDS results obtained from HA/bioactive glass film, after soaking in SBF, showed increasing P amounts on the surface at the expense of Si. The higher density of the newly formed layer on HA/bioactive glass surface than that of the HA surface after 10 days of soaking was evidence of increased reaction rate and apatite forming ability when bioactive glass layer is present on the HA films.     

Cu/Sn比率对Cu2SnSe3薄膜若干物理性质的影响

利用射频(RF)磁控溅射在玻璃基片上共溅射沉积Cu-Sn预制膜。采用固态硒化法,制备Cu/Sn化学计量比在1.87～2.22之间的Cu2SnSe3薄膜。研究了Cu/Sn比率对Cu2SnSe3薄膜的晶体结构、微结构、光学性能以及电学性能的影响。X射线衍射(XRD)结果表明,所制备的Cu2SnSe3薄膜为立方晶体结构,具有(111)择优取向;贫铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而增大;富铜的Cu2SnSe3薄膜光学带隙Eg随着Cu/Sn比率增大而不变。薄膜电阻率为1.67～4.62mΩ.cm。