Solar Cells: Performance Optimization of Polymer Solar Cells Using Electrostatically Sprayed Photoactive Layers (Adv. Funct. Mater. 20/2010)

Polymer solar cells (PSCs) are fabricated using a novel film deposition method, the electrostatic spray (e‐spray) technique. Stable atomization and uniform deposition of the polymer blend by e‐spray are achieved by manipulating the solution concentration, the solvent composition, and the electric field. The performance of PSCs is primarily influenced by the inherent film morphology of the e‐sprayed polymer‐blend active layers, which is significantly different from that of the conventional films that are formed using the spin‐coating (SC) method. The intrinsically formed interfacial boundaries between the e‐sprayed blend pancakes resist charge transport, which unfavorably influences device efficiency. The internal series resistance (R_S) of the PSCs that are formed using the e‐spray method (e‐spray‐PSC) is significantly reduced by a solvent vapor soaking (SVS) treatment in addition to the conventional thermodynamic nanomorphology controls. The detailed relationship between the morphologies (film morphology and internal nanomorphology) and the R_S is revealed using impedance spectroscopy. The performance of the e‐spray‐PSCs is comparable to those of the PSCs that are fabricated using the SC method under identical conditions. Therefore, the e‐spray method can be used to fabricate ultralow‐cost PSCs, because of the performance results combined with the intrinsic advantages that the e‐spray method is simple and has a low materials loss.     

锗掺杂磁控直拉单晶硅太阳电池

介绍了锗掺杂浓度为（1～1.5) E19cm-3的10Ω·cm磁控直拉单晶硅衬底上BSFR (back surface field and reflection）和BSR(back surface reflection)太阳电池的制备和电性能. BSR锗掺杂单晶硅太阳电池的AM0效率最高为12.3%. BSFR锗掺杂单晶硅太阳电池的AM0效率达到15%. 利用1MeV的高能电子对制备的锗掺杂单晶硅太阳电池进行了辐照实验. 作为对比，对全部常规10Ω·cm的CZ单晶硅太阳电池也进行了实验. 结果表明，锗掺杂浓度为（1～1.5)E19cm-3的磁控直拉单晶硅太阳电池的电性能和抗辐照性能与常规直拉硅太阳电池基本相同. 利用锗掺杂磁控直拉单晶硅片机械强度较高的优点，可以降低太阳电池生产过程破损率.     

锗掺杂磁控直拉单晶硅太阳电池

介绍了锗掺杂浓度为(1～1.5)×1019cm-3的10Ω·cm磁控直拉单晶硅衬底上BSFR(back surface field and reflection)和BSR(back surface reflection)太阳电池的制备和电性能.BSR锗掺杂单晶硅太阳电池的AM0效率最高为12.3%.BSFR锗掺杂单晶硅太阳电池的AM0效率达到15%.利用1MeV的高能电子对制备的锗掺杂单晶硅太阳电池进行了辐照实验.作为对比,对全部常规10Ω·cm的CZ单晶硅太阳电池也进行了实验.结果表明,锗掺杂浓度为(1～1.5)×1019cm-3的磁控直拉单晶硅太阳电池的电性能和抗辐照性能与常规直拉硅太阳电池基本相同.利用锗掺杂磁控直拉单晶硅片机械强度较高的优点,可以降低太阳电池生产过程破损率.     

锗掺杂磁控直拉单晶硅太阳电池

介绍了锗掺杂浓度为(1～1.5)×1019cm-3的10Ω·cm磁控直拉单晶硅衬底上BSFR(back surface field and reflection)和BSR(back surface reflection)太阳电池的制备和电性能.BSR锗掺杂单晶硅太阳电池的AM0效率最高为12.3%.BSFR锗掺杂单晶硅太阳电池的AM0效率达到15%.利用1MeV的高能电子对制备的锗掺杂单晶硅太阳电池进行了辐照实验.作为对比,对全部常规10Ω·cm的CZ单晶硅太阳电池也进行了实验.结果表明,锗掺杂浓度为(1～1.5)×1019cm-3的磁控直拉单晶硅太阳电池的电性能和抗辐照性能与常规直拉硅太阳电池基本相同.利用锗掺杂磁控直拉单晶硅片机械强度较高的优点,可以降低太阳电池生产过程破损率.     

Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs)

Since the DSSCs gain heat during exposure to sunlight increasing its own temperature, we have studied the role of temperature on the degradation of DSSCs. We have performed pure thermal stresses keeping the devices at a constant temperature inside a climatic chamber and monitoring the electrical parameters during stress. We found that temperature alone strongly impacts on the DSSC performances, enhancing the degradation of the sensitizer and then reducing the photo-generated current.     

Gold(III) Corroles for High Performance Organic Solar Cells

While the use of molecular materials having long‐lived triplet excited state(s) for harvesting solar energy could be an effective approach to boost up the power conversion efficiency (PCE) of organic solar cells (OSCs), the performances of this kind of OSCs as reported in the literature are low (< 2.9% PCE attained for the vacuum‐deposited OSCs). Herein is described the realization of high performance OSCs by using gold(III) 5,10,15‐triphenylcorrole ( Au‐C1 ), gold(III) 10‐(p‐trifluoromethylphenyl)‐5,15‐diphenylcorrole ( Au‐C2 ), and gold(III) 10‐(pentafluorophenyl)‐5,15‐diphenyl‐corrole ( Au‐C3 ), as electron‐donors. These gold(III) corroles display excited state lifetimes of ≥ 25 μs and low emission quantum yields of < 0.15%. With the complexes Au‐C1 , Au‐C2 , and Au‐C3 , vacuum‐deposited OSCs, which give PCEs of 2.7%, 3.0%, and 1.8%, respectively, are fabricated. The PCE can be further boosted up to 4.0% after thermal treatment of the OSC devices. Meanwhile, a solution‐processed OSC based on Au‐C2 with a high PCE of 6.0% is fabricated. These PCE values are among the best reported for both types of vacuum‐deposited and solution‐processed OSCs fabricated with metal‐organic complexes having long‐lived excited states as electron‐donor material. The underlying mechanism for the inferior performance of the reported OSCs is discussed.