Potical Energy Gap and Below Gap Optical Absorption of Fullerene Films Measured By Constant Photocurrent Method and Photothermal Deflection Spectroscopy

CPM spectra of the fullerene film was measured to obtain the below gap absorption. The optical energy gap E_o was obtained by using the Tauc's plots. E_o did not change so much with the intercalated impurities. The absorption due to intercalated impurities was found below 1.6eV.     

Optical properties of copper-doped Cd3P2

The effects of copper-doping on the optical properties of Cd₃P₂ have been investigated. A greatly enhanced low-temperature photoconductive response at energies below the band gap provides evidence of deep copper impurity levels (≈0.1 eV above the valence band edge). The presence of electrically active copper impurities which bring about a high degree of compensation is believed to be responsible for the sharp increase in the absorption constant at energies less than the band gap as well as for the pronounced reduction in the intensity of photoluminescence. The index of refraction was found to be 3.8 for both as-grown and copper-doped Cd₃P₂.     

Gap states in HTSC by infrared spectroscopy

Recent infrared reflectance spectroscopy on high quality crystals of a number of HTSC systems shows thatall have finite conductivity in the frequency region of the superconducting gap. Results on untwinned YBCO from a number of laboratories show that this absorption is not due to experimental problems or sample-to-sample variations. Other materials also show absorption features in the gap region in the form of peaks. We discuss these results in terms of recent ideas of the effect of impurities in d-wave superconductors.     

Optical characterization of MBE-grown GaNAs

We report on low-temperature (T=2 K) optical studies of GaNAs epi-layers with different nitrogen concentrations grown by molecular beam epitaxy (MBE). The content of N in the layers was analyzed by X-ray diffraction (XRD) and secondary-ion mass spectrometry (SIMS). Using absorption data we have determined the fundamental band gap energy and the bowing parameter as a function of nitrogen concentration in the GaN_xAs_1-x alloy up to x=4%.     

Optical properties of poly(vinyl chloride)/poly(ethylene oxide) blend

The relatively high dielectric constant poly(vinyl chloride) (PVC) was blended with poly(ethylene oxide) (PEO) polymer electrolytes to improve their electrical conductivity from the optical spectra of the given polymeric system. The optical properties in the UV–visible region of PVC polymer containing 0%, 20%, 50% and 70% by weight PEO are reported. The optical results obtained were analyzed in terms of the absorption formula for non-crystalline materials. The absorption coefficient and the optical band energy gap (E_opt) have been obtained from direct allowed transitions in k-space at room temperature. The width of the tail of localized states in the band gap (ΔE) was evaluated using the Urbach-edges method. It was found that both (E_opt) and (ΔE) vary with the concentration of the PEO complex in the polymer matrix. In addition, a correlation between the energy gap and the ac-conductivity as a function of PEO complex concentration is also reported.     

Optical Properties of Pb(Zr,Ti)O/sub 3/Films Prepared by Aerosol Deposition

The optical properties and related band structure of ferroelectric lead zirconate titanate [PZT, Pb(Zr_0.6Ti_0.4)O₃] films prepared on glass substrates at room temperature by aerosol deposition were investigated. The reflectance and transmittance of the PZT films were measured in the wavelength range from UV to near-infrared. The measured optical spectra were analyzed using dielectric function models that describe optical transitions in the band gap region. Optical absorption of the as-deposited PZT films was found to be larger than that of the annealed PZT films in the near-infrared wavelength range. The analyzed results indicated that post-deposition annealing increased the band gap energy of the PZT films, corresponding to a decrease in optical absorption.     

宽带隙、高折射率聚偏四氟乙烯/TiO2-ZrO2光学膜的制备和表征

以氧氯化锆(ZrOCl₂·8H₂O)为锆源, 钛酸丁酯(Ti(OBu)₄)为钛源, 聚偏氟乙烯(PVDF)为有机添加剂, 采用溶胶–凝胶法在K9玻璃基片上制备PVDF/TiO₂-ZrO₂光学膜, 提高了ZrO₂-TiO₂光学膜的综合性能。然后采用SEM、FT-IR、接触角以及紫外/可见/近红外透射光谱等手段对PVDF/TiO₂-ZrO₂光学膜的组成、光学性能和抗激光损伤阈值进行了研究。SEM测试表明, 在K9玻璃基片上制备了光学膜。PVDF的添加导致水与薄膜的接触角增大。ZrO₂-TiO₂光学膜的光学带隙随ZrO₂含量的增加而略微增大, PVDF/ZrO₂(50mol%)-TiO₂薄膜的光学带隙随PVDF质量分数的增加而增大。另外, ZrO₂-TiO₂光学膜的折射率随ZrO₂摩尔分数的减小而增大, PVDF/ZrO₂(50mol%)-TiO2膜的折射率随PVDF质量分数的增加而增大。     

Optical Properties and Photoconductivity of Bismuth Titanate

The optical absorption spectra and photoelectric properties of undoped and doped (CaF, CdO, ZnO, Ga₂O₃, Fe₂O₃, Bi₂₄FePO₄₀, and Bi₂₄AlPO₄₀) Bi₁₂TiO₂₀single crystals were studied before and after vacuum annealing. The optical absorption and photoconductivity in Bi₁₂TiO₂₀crystals were shown to be due to impurities. The band gap of Bi₁₂TiO₂₀was determined to be 3.21 ± 0.03 eV. Doping and vacuum annealing have a significant effect on the optical properties of Bi₁₂TiO₂₀via the formation of acceptor and donor levels in the band gap.     

Modification of UV-VIS optical absorption properties caused by MgO incorporation in MgO-doped LiNbO3 crystals

MgO-doped LiNbO₃ single crystals were investigated in the UV-VIS range to study the effect of MgO in the LiNbO₃ host. Congruent LiNbO₃ has an optical absorption edge of 3.75 eV. Analysis of the absorption edge gave an estimate of the indirect band gap for MgO-LiNbO₃ solid solutions. The band gap shows an MgO threshold effect in the absorption coefficient. An additional indirect transition at 2.2–2.5 eV was revealed when MgO was incorporated into the lithium niobate structure. This indirect transition also has a MgO threshold effect around 5 mol% MgO.     

Optical properties of Tl2InGaS4 layered single crystal

The temperature dependence of the optical band gap of Tl₂InGaS₄ single crystal in the temperature region of 300–500 K and the room temperature refractive index, n(λ), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28–2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of −4.03 × 10⁻⁴ eV/K. The room temperature n(λ), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively.     

Properties of tantalum oxide thin films grown by atomic layer deposition

Thin tantalum oxide films were deposited using atomic layer deposition from TaCl₅ and H₂O at temperatures in the range 80–500 °C. The films deposited at temperatures below 300 °C were predominantly amorphous, whereas those grown at higher temperatures were polycrystalline containing the phases TaO₂ and Ta₂O₅. The oxygen to tantalum mass concentration ratio corresponded to that of TaO₂ at all growth temperatures. The optical band gap was close to 4.2 eV for amorphous films and ranged from 3.9 to 4.5 eV for polycrystalline films. The refractive index measured at λ = 550 nm increased from 1.97 to 2.20 with an increase in growth temperature from 80 to 300 °C. The films deposited at 80 °C showed low absorption with absorption coefficients of less than 100 cm⁻¹ in the visible region.     

Optical properties of undoped and chromium-doped VA-VIA-VIIA single crystals

SbSl∶Cr, SbSel∶Cr, BiSl∶Cr, and BiSel∶Cr single crystals were grown by the vertical Bridgman technique using the ingots synthesized from the high-purity (99.9999%) elements antimony, bismuth, sulphur, selenium, iodine and chromium. The grown single crystals crystallized in the orthorhombic structure and had an indirect energy-band structure. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. When chromium was doped into the single crystals, impurities in the optical absorption peaks appeared, and were attributed to the electron transitions between the energy levels of Cr²⁺ ions sited at the T_d symmetry point in the host lattice.     

Eu-掺杂CeB6纳米晶的合成与光吸收研究

采用固相反应法成功地将Eu元素掺入CeB₆纳米晶中, 并系统地研究了对其光吸收性能的影响规律。由XRD分析、扫描电镜和透射电镜能谱分析结果充分证明了Eu元素成功地掺入了CeB₆晶格中。光吸收结果表明, 随着Eu掺杂量的增加, CeB₆吸收峰波长从938 nm增加至1718 nm, 产生了“红移”现象。与此同时, 透射光波长也从可见光区域的798 nm 红移至近红外区域的1138 nm。本文揭示了通过Eu掺杂可使CeB₆透射光波长和吸收峰波长连续可调。这一特性对于拓展CeB₆的光学应用具有重要意义。     

电沉积ZnO纳米柱的光学带隙与非辐射复合EI北大核心CSCD

为实现ZnO纳米柱阵列材料在新型纳米结构化太阳能电池中的应用,需要对纳米柱的几何形貌与光电特性进行调控。ZnO纳米柱阵列材料的制备方法为电化学沉积方法。通过在生长溶液中使用In(NO_(3))_(3)和NH_(4)NO_(3),实现了对纳米柱的直径、阵列密度、柱间距、光学带隙、近带边发射、斯托克斯位移等物理性质的调控。采用扫描电子显微镜、X射线衍射仪、分光光度计、光致发光测试仪对样品的形貌、晶体性质、透射反射性质、光致发光性质进行测试与表征。结果表明,使用NH_(4)NO_(3)将紧密排列的ZnO纳米柱阵列密度降低了51%,导致柱间距增大至超过100 nm,同时可将纳米柱的直径降低至22 nm。使用In(NO_(3))_(3)使ZnO纳米柱的光学带隙展宽100 meV。通过NH_(4)NO_(3)的使用可在3.41 eV至3.55 eV范围内调控带隙。由于NH_(4)NO_(3)的引入,ZnO纳米柱的斯托克斯位移可降低至19 meV,表明NH_(4)NO_(3)的引入能够有效地抑制纳米柱阵列中的非辐射复合。     

Zn3-xMnxTeO6的晶体结构与吸收光谱和磁性研究

本工作主要研究Mn ²⁺离子掺杂的类刚玉系氧化物Zn₃TeO₆(0<x≤2.0)的晶体结构与光学性质和磁性的变化。Zn_3-xMn_xTeO₆粉末样品通过固相反应合成。Mn掺杂量的相图表明, x<1.0时保持单斜(C2/c)结构, 1.0≤x≤1.6为单斜(C2/c)和三方六面体混合相(R-3), x≥1.8时完全转变为R-3相, 且x=2.0时形成ZnMn₂TeO₆, Te-O和Mn/Zn-O键长增大, 八面体发生更大畸变。X射线粉末衍射结构精修也表明R-3相中Zn/MnO₆为畸变八面体。随着Mn ²⁺掺杂含量的增加, Zn_3-xMn_xTeO₆系列化合物不仅结构发生变化, 其颜色也由浅变深。紫外吸收光谱中随着掺杂浓度的增加, 400~550 nm处的吸收增强, 样品的光学带隙也由3.25 eV (x=0.1)逐渐减小到2.08 eV (x=2.0), 分析表明, 可见区吸收的增强是源于MnO₆八面体中Zn/MnO₆八面体中Mn ²⁺离子的d-d跃迁, 导致样品由浅黄色逐渐变为暗黄色。 磁性测试表明, 固溶体的反铁磁转变温度随着Mn ²⁺掺杂量的提高而逐渐增加, 且掺入的Mn ²⁺离子以高自旋态 存在。     

Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells

Microcrystalline silicon (μc-Si:H) prepared by hot-wire chemical vapour deposition (HWCVD) at low substrate temperature T_S and low deposition pressure exhibits excellent material quality and performance in solar cells. Prepared at T_S below 250 °C, μc-Si:H has very low spin densities, low optical absorption below the band gap, high photosensitivities, high hydrogen content and a compact structure, as evidenced by the low oxygen content and the weak 2100 cm⁻¹ IR absorption mode. Similar to PECVD material, solar cells prepared with HWCVD i-layers show increasing open circuit voltages V_oc with increasing silane concentration. The best performance is achieved near the transition to amorphous growth, and such solar cells exhibit very high V_oc up to 600 mV. The structural analysis by Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM) shows considerable amorphous volume fractions in the cells with high V_oc. Raman spectra show a continuously increasing amorphous peak with increasing V_oc. Crystalline fractions X_C ranging from 50% for the highest V_oc to 95% for the lowest V_oc were obtained by XRD. XRD-measurements with different incident beam angles, TEM images and electron diffraction patterns indicate a homogeneous distribution of the amorphous material across the i-layer. Nearly no light induced degradation was observed in the cell with the highest X_C, but solar cells with high amorphous volume fractions exhibit up to 10% degradation of the cell efficiency.     

光学薄膜的激光诱导损伤与材料带隙的关系

采用多光子吸收电离模型讨论了光学薄膜的激光诱导损伤与其材料带隙的关系,报实际光学薄膜存在大量的非化学计量比化合物缺陷时,损伤阈值的变化,给出了光汪膜的损伤阈民其材料带隙的关系曲线,理论上解释了实际光学薄膜较理想光学薄膜的损伤阈值的主要原因可能是实际光学薄膜中存在大量的非化学计量比化合物缺陷。     

Na1.88Bi1.88S4和Na1.36Ca1.28Bi1.36S4单晶制备与结构及其光学性能表征

采用碘化钠为助熔剂,通过固相反应法制备了两种晶体质量较好的Na_1.88Bi_1.88S₄和Na_1.36Ca_1.28Bi_1.36S₄单晶。测试结果表明,它们属于氯化钠结构,面心立方,空间群为Fm-3m。形貌表征和物性测试结果表明,在碘化钠的作用下,化合物Na_1.88Bi_1.88S₄和Na_1.36Ca_1.28Bi_1.36S₄呈现双锥状形貌,沿(111)晶面择优取向生长,带隙分别为1.29和1.45 eV。通过光电器件性能测试,发现两种化合物均表现出良好的光电响应特性,说明它们可以作为一类潜在的、性能优良的光电开关材料。     

Sn对Ge-Se-Te玻璃结构与光学特性的影响

采用熔融淬冷法制备了系列Ge₃Se₅Te₂Sn_x(x=0、0.4、0.8、1.2、1.6、2.0, mol%)硫系玻璃。采用X射线衍射(XRD)图谱、差示扫描量热曲线(DSC)、可见/近红外光谱、傅里叶红外(FTIR)光谱、显微拉曼光谱等手段对玻璃的物化性能及结构进行表征, 研究发现Sn的引入导致Ge-Se-Te玻璃系统物化性能的变化: 玻璃的转变温度T_g降低、红外截止波长发生红移, 并有效地降低了杂质吸收峰对样品红外透过率的影响。利用Philips网络约束理论计算的玻璃平均配位数及拉曼光谱的变化, 讨论了引入Sn对Ge-Se-Te玻璃的影响。     

Optical and electrical properties of aluminum-doped zinc oxide nanoparticles

Aluminum-doped zinc oxide nanopowders were prepared using a surfactant assisted complex sol–gel method, and were characterized using inductively coupled plasma, X-ray diffraction, scanning electron microscopy/energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and UV–Vis spectroscopy. Al was effectively doped into the ZnO matrix with concentrations up to 6.00 atomic ratio percents (at.%). X-ray diffraction results revealed that all of the nanoparticles had a pure hexagonal wurtzite structure free of any impurities when annealing temperature was below 1273 K. The optical band gap of the nanopowders, which was affected by the Al-doping concentration, reached a maximum of 3.43 eV when ZnO was doped with 4.00 at.% Al. The effect of post-annealing temperature and vacuum conditions on the resistivities of the Al-doped ZnO nanoparticles was also investigated. And the lowest volume resistivity (1.2 Ω cm) was achieved by annealing the Al-doped ZnO nanoparticles in a vacuum at 1173 K for 2 h.