Ni1−xCoxSe2?C/ZnIn2S4 Hybrid Nanocages with Strong 2D/2D Hetero-Interface Interaction Enable Efficient H2-Releasing Photocatalysis

Designing a semiconductor-based heterostructure photocatalyst for achieving the efficient separation of photogenerated electron-hole pairs is highly important for enhancing H₂ releasing photocatalysis. Here, a new class of Ni_1−xCo_xSe₂–C/ZnIn₂S₄ hierarchical nanocages with abundant and compact ZnIn₂S₄ nanosheets/Ni_1−xCo_xSe₂^ C nanosheets 2D/2D hetero–interfaces, is designed and synthesized. The constructed heterostructure photocatalyst exposes rich hetero-junctions, supplying the broad and short transfer paths for charge carriers. The close contacts of these two kinds of nanosheets induce a strong interaction between ZnIn₂S₄ and Ni_1−xCo_xSe₂ C, improving the separation and transfer of photo-generated electron-hole pairs. As a consequence, the distinctive Ni_1−xCo_xSe₂ C/ZnIn₂S₄ hierarchical nanocages without using additional noble-metal cocatalysts, display remarkable H₂-relaesing photocatalytic activity with a rate of 5.10 mmol g⁻¹ h⁻¹ under visible light irradiation, which is 6.2 and 30 times higher than those of fresh ZnIn₂S₄ nanosheets and bare Ni_1−xCo_xSe₂ C nanocages, respectively. Spectroscopic characterizations and theory calculations reveal that the strong interaction between ZnIn₂S₄ and Ni_1−xCo_xSe₂ C 2D/2D hetero-interfaces can powerfully promote the separation of photo-generated charge carriers and the electrons transfer from ZnIn₂S₄ to Ni_1−xCo_xSe₂ C.     

低温溶剂热法一步制备氧化铟纳米粉体

以硝酸铟为原料,尿素为沉淀剂,将反应物溶于乙二醇,放入聚四氟乙烯内衬的反应釜中于200℃反应,采用溶剂热法一步制得In2O3纳米粉体。研究了反应时间和温度对粉体的结构、表面形貌和粒度的影响,并初步探讨了反应机理。结果表明:所制粉体为类球形,平均粒径约为25 nm。制备过程无需高温煅烧、操作简单,所得产物纯度高、粒度均匀、分散性好。     

微波水解法制备In2O3纳米颗粒及气敏性能研究

以InCl3.4H2O为原料,用微波水解法制备In2O3纳米颗粒,并用TEM、XRD对合成材料的形貌和结构进行了表征。结果表明,所制的产品为球形In2O3,平均粒径为20 nm;用静态配气法测试了材料的气敏特性,与恒温水解制备的氧化铟材料的气敏特性基本一致。5.0 V加热电压下,对50×10–6酒精蒸气有较好的气敏性能,灵敏度为9.51,响应/恢复时间为6 s/6 s。     

不掺杂In2O3透明导电薄膜的制作

采用反应蒸发技术制作不掺杂Ｉｎ２Ｏ３透明导电薄膜,薄膜厚度为１５０～２００ｎｍ、方块电阻为６０～２００Ω／□,透光率为８０％～９４％（波长λ＝６００ｍｍ）。了蒸发过程氧气充入量和蒸发时间对薄膜的光电特性的影响,说明低蒸发速率和限制氧气流量是获得优质薄膜的关键。     

掺杂Au和Co的In2O3纳米粉体的微乳液法制备及其气敏特性

在油包水(W/O)型微乳液体系中,通过In(NO3)3、Co(NO3)2、HAuCl4和(NH4)2CO3之间的共沉淀反应,制备了掺钴和金的纳米氧化铟的前驱体.对前驱体经300℃焙烧后所得的粉体进行了XRD表征和气敏性测试.结果表明,制得的氧化铟粉体为立方晶相,随着钴和金掺杂量的增大,样品的晶粒度逐渐减小;同时掺杂1mol%的Co和1mol%的Au的氧化铟气敏元件对CO气体敏感性有较大提高,灵敏度达到25.9,而且具有较高的选择性.     

高灵敏度光声光谱仪及其生物学应用研究

由可调谐CO/CO2激光器、纵向共振光声池、植物样品气体采集系统、计算机控制和数据处理系统组成的高灵敏度光声光谱仪,可对多种与植物气体交换有关的微量气体进行连续自动测量,其中对C2H4气体的检测灵敏度达到2×10-11。利用该系统对O3熏蒸后油桃果实的C2H4产量的变化进行了监测,测量结果显示了该光谱仪用于生物样品检测的优越特性。     

透明导电膜及靶材

透明导电膜在电气及光学领域的应用日益广泛。近年来以掺杂Ｓｎ的Ｉｎ２Ｏ３（简称ＩＴＯ）开发和应用受到重视。用ＩＳＯ靶通过溅射法制备ＩＴＯ透明导电膜。由金属铟制取氧化铟粉末，后与氧化锡混合、压制烧结制出相对密度达９５％的ＩＴＯ靶材。     

La掺杂In2O3纳米粉体的制备及气敏性能研究

采用水热法制备了质量分数w[La(NO3)3]为3%～9%的La(NO3)3-In2O3纳米粉体。利用XRD,SEM,TEM等测试手段,对其物相、结构进行了表征。结果表明:掺质量分数为7%的La(NO3)3的In2O3纳米粉体,其颗粒长度和直径分别为2μm与200nm左右,呈棒状。利用该纳米粉体制成气敏元件,并采用静态配气法测试了元件的气敏性能。研究发现:元件在110℃的工作温度下,对体积分数为100×10-6的Cl2的灵敏度高达1665.7,且具有良好的选择性与响应-恢复特性。     

In2O3基甲醛传感器的研制

以sol-gel法制备的In2O3纳米材料为基体,采用La2O3作为掺杂剂,研制出甲醛传感器。结果表明:La2O3的掺杂可以明显提高元件对甲醛的灵敏度,在工作温度为145℃,(甲醛)为10×10–6时,元件表现出4倍的灵敏度,通过4A分子筛的修饰提高了元件的选择性。在为期90d的追踪实验中发现元件的灵敏度变化小于10%,元件在(甲醛)为50×10–6时,响应、恢复时间分别为8s和30s。     

Multi-Functional Platform for In-Memory Computing And Sensing Based on 2D Ferroelectric Semiconductor α-In2Se3

2D layered semiconductors with excellent light−matter interaction and atomic-scale thickness have been envisioned as promising candidates for more than Moore and beyond Moore technologies. Here, for the first time, a multi-functional platform is reported that is fabricated entirely from wrinkle-free 2D ferroelectric semiconductor α-In₂Se₃ integrated with a photodetector, reconfigurable logic switching, and visual perception processing functions. The intensity- and wavelength-dependent resistance is used to demodulate broadband optical information into electrical signals and perform reconfigurable logic switching. Moreover, the platform offers dynamically modulated photosensitive visual sensing in different working modes at the pixel level. Using photo-assisted piezoresponse force microscopy, the optical-engineered ferroelectric polarization switch behavior is explored. The platform has excellent sensitivity to both optical and electrical stimuli and can respond to lights in the visible to short-wavelength infrared region in volatile/non-volatile manner under gate voltage modulation, with a response of 98 mA W⁻¹ (to 1800 nm light), a current on/off ratio of over 10⁶, and a high field-effect mobility of 137.55 cm² V⁻¹ s⁻¹. With its simple structure, unique photoelectric interaction, and controllable operating mechanism, the platform has the potential to simplify the complexity of neuromorphic computing circuitry systems, paving the way for high-performance hybrid technologies suitable for artificial intelligence applications.     

Large-Size Ultrathin α-Ga2S3 Nanosheets toward High-Performance Photodetection

Following the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α-Ga₂S₃ as an important member of group III_A–VI_A semiconductors has outstanding optoelectronic properties. However, the controllable large-size synthesis of ultrathin α-Ga₂S₃ nanosheets still remains a huge challenge. In this paper, a large-size ultrathin nanosheets of hexagonal Ga₂S₃ is prepared via an improved chemical vapor deposition method. High-performance photodetectors based on the ultrathin Ga₂S₃ nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W⁻¹/1.4 × 10¹² Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga₂S₃ nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next-generation nanoscale smart optoelectronics.     

High Purity and Large-scale Preparation of β-Ga2O3 Nanowires and Nanosheets by CVD and Their Raman and Photoluminescence Characteristics

Ga2O3 nano-structures, nanowires and nanosheets are produced on Au pre coated（111） silicon substrates with chemical vapor deposition（CVD） technique. By evaporating pure Ga powder in the H2O atmosphere under ambient pressure the large-scale preparation of β-Ga2O3 with monoclinic crystalline structure is achieved. The crystalline structures and morphologies of produced Ga2O3 nano-structures are characterized by means of scanning electron microscope（SEM）, X-ray diffraction（XRD）, selected area electron diffraction （SAED） and transmission electron microscope（TEM）. Raman spectrum reveals the typical vibration modes of Ga2O3 The vibration mode shifts corresponding to Ga2O3 nano-structures are not found. Two distinguish photoluminescence（PL） emissions are found at about 399 nm and 469 nm owing to the VO-VGa excitation and VO-VGaO excitation, respectively. The growth mechanisms of Ga2O3 nanowires and nanosheets are discussed with vapor liquid-solid（VLS） and vapor-solid（VS） mechanisms.     

（英）硫代硫酸钠浓度对电沉积制备铜锌锡硫硒薄膜性质的影响

采用后硒化Cu-Zn-Sn-S电沉积预制层的方法制备了铜锌锡硫硒薄膜,其中Cu-Zn-Sn-S预制层是通过含有不同浓度的硫代硫酸钠电解液电沉积而成的.实验发现,硒化前后薄膜的性质与硫代硫酸钠浓度密切相关.SEM,EDS,XRD,Raman和透射光谱分析表明,当硫代硫酸钠的浓度为5 mM时,沉积的薄膜形貌平整,晶粒明显,组分贫锌,具有单一的铜锌锡硫硒结构,且其带隙为1.11 eV; 在浓度高于5 mM下沉积的薄膜形貌粗糙并产生杂相硒化锡; 在浓度低于5 mM下沉积的薄膜组分严重贫锌并生成大量的Cu2SnSe3.