Electrical properties of zirconium diselenide single crystals grown by iodine transport method

Single crystals of zirconium diselenide (ZrSe₂) were grown by chemical vapour transport method using iodine as the transporting agent. The crystals were found to exhibit metallic behaviour in the temperature range 77–300 K and semiconducting nature in 300–443 K range. The measurements of thermoelectric power and conductivity enabled the determination of both carrier mobility and carrier concentration. The variation of carrier mobility and carrier concentration with temperature indicates the presence of deep trapping centres and their reduction with temperature in these crystals.     

Anisotropic behaviour of semiconducting tin monosulphoselenide single crystals

Single crystals of ternary mixed compounds of group IV-VI in the form of a series, SnS_xSe_1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), have been grown using direct vapour transport technique. The grown crystals were characterized by the X-ray diffraction analysis for their structural parameter determination. All the grown crystals were found to be orthorhombic. The microstructure analysis of the grown crystals reveals their layered type growth mechanism. From the Hall effect measurements Hall mobility, Hall coefficient and carrier concentration were calculated with all crystals showingp-type nature. The d.c. electrical resistivity measurements perpendicular toc-axis (i.e. along the basal plane) in the temperature range 303–453 K were carried out for grown crystals using four-probe method. The d.c. electrical resistivity measurements parallel to c-axis (i.e. perpendicular to basal plane) in the temperature range 303–453 K were carried out for the same crystals. The electrical resistivity measurements showed an anisotropic behaviour of electrical resistivity for the grown crystals. The anisotropic behaviour and the effect of change in stoichiometric proportion of S and Se content on the electrical properties of single crystals of the series, SnS_xSe_1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), is presented systematically.     

Crystal growth and structural analysis of zirconium sulphoselenide single crystals

A series of zirconium sulphoselenide (ZrS _x Se_3−x , where x = 0, 0·5, 1, 1·5, 2, 2·5, 3) single crystals have been grown by chemical vapour transport technique using iodine as a transporting agent. The optimum condition for the growth of these crystals is given. The stoichiometry of the grown crystals were confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and the structural characterization was accomplished by X-ray diffraction (XRD) studies. The crystals are found to possess monoclinic structure. The lattice parameters, volume, particle size and X-ray density have been carried out for these crystals. The effect of sulphur proportion on the lattice parameter, unit cell volume and X-ray density in the series of ZrS _x Se_3−x single crystals have been studied and found to decrease in all these parameters with rise in sulphur proportion. The grown crystals were examined under optical zoom microscope for their surface topography study. Hall effect measurements were carried out on grown crystals at room temperature. The negative value of Hall coefficient implies that these crystals are n-type in nature. The conductivity is found to decrease with increase of sulphur content in the ZrS _x Se_3−x series. The electrical resistivity parallel to c-axis as well as perpendicular to c-axis have been carried out in the temperature range 303–423 K. The results obtained are discussed in detail.     

Optical band gap of Sn<Subscript>0.2</Subscript>Bi<Subscript>1.8</Subscript>Te<Subscript>3</Subscript> thin films

Sn_0.2Bi_1.8Te₃ thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500–4000 cm⁻¹. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.     

Crystal growth and characterization of Pt0.97S2

Large, well-formed plates of Pt_0.97 S₂ were grown by chemical vapor transport. A combination of phosphorus and chlorine was used as the transport agent. The best crystals were grown when the charge zone was maintained at 800°C and the growth zone at 740°C. The crystals were found to be diamagnetic with a susceptibility of ?31(2) × 10^?6 emu/mole at 77°K and showed semiconducting behavior with a band gap of 0.20(2)eV. From Hall voltage measurements, the sign of the carriers was ascertained to be positive. Pt_0.97S₂ particles less than 63μ underwent thermal decomposition in air at 270(10)°C.     

Measurements of transport properties of TlGaSe2 crystals

TlGaSe₂ single crystals were grown by modified Bridgman method. The crystals were identified structurally by X-ray diffraction. Measurements of electrical conductivity and Hall effect were performed in the range (200–492 K) and (163–602 K) for thermoelectric power (TEP) measurements. Anisotropic nature of the layered TlGaSe₂ crystal was investigated. Hall effect and thermoelectric power measurements revealed the extrinsic p-type conduction in the low temperature range of the study. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveal that the acceptor level is located at 0.2 eV above the valence band of TlGaSe₂. From the obtained experimental data, the main characteristic parameters of the crystals have been estimated. Energy gap and acceptor concentration were 2.23 eV and 9.6 × 10¹³ cm^?3 respectively.     

Structural,optical, and electrical properties of flash-evaporated copper indium diselenide thin films

Copper indium diselenide (CuInSe₂) compound was synthesized by reacting its elemental components, i.e., copper, indium, and selenium, in stoichiometric proportions (i.e., 1:1:2 with 5% excess selenium) in an evacuated quartz ampoule. Structural and compositional characterization of synthesized pulverized material confirms the polycrystalline nature of tetragonal phase and stoichiometry. CuInSe₂ thin films were deposited on soda lime glass substrates kept at different temperatures (300–573 K) using flash evaporation technique. The effect of substrate temperature on structural, morphological, optical, and electrical properties of CuInSe₂ thin films were investigated using X-ray diffraction analysis (XRD), atomic force microscopy (AFM), optical measurements (transmission and reflection), and Hall effect characterization techniques. XRD analysis revealed that CuInSe₂ thin films deposited above 473 K exhibit (112) preferred orientation of grains. Transmission and reflectance measurements analysis suggests that CuInSe₂ thin films deposited at different substrate temperatures have high absorption coefficient (~10⁴ cm⁻¹) and optical energy band gap in the range 0.93–1.02 eV. Results of electrical characterization showed that CuInSe₂ thin films deposited at different substrate temperatures have p-type conductivity and hole mobility value in the range 19–136 cm²/Vs. Variation of energy band gap and resistivity of CuInSe₂ thin films deposited at 523 K with thickness was also studied. The temperature dependence of electrical conductivity measurements showed that CuInSe₂ film deposited at 523 K has an activation energy of ~30 meV.     

Characterization of CuAlO2 films prepared by dc reactive magnetron sputtering

Thin films of copper aluminum oxide (CuAlO₂) were prepared on glass substrates by dc magnetron sputtering at a substrate temperature of 523 K under various oxygen partial pressures in the range 1 × 10⁻⁴–3 × 10⁻³ mbar. The dependence of cathode potential on the oxygen partial pressure was explained in terms of oxidation of the sputtering target. The influence of oxygen partial pressure on the structural, electrical and optical properties was systematically studied. p-Type CuAlO₂ films with polycrystalline nature, electrical resistivity of 3.1 Ω cm, Hall mobility of 13.1 cm² V⁻¹ s⁻¹ and optical band gap of 3.54 eV were obtained at an oxygen partial pressure of 6 × 10⁻⁴ mbar.     

Growth and transport property measurements of rhenium doped tungsten diselenide single crystal

Single crystals of rhenium doped tungsten diselenide i.e. Re_xW_1−xSe₂ (x = 0, 0.0005, 0.001, 0.05, 0.1) are grown by vapour phase technique. The stoichiometry of grown single crystals is confirmed by energy dispersive analysis of X-rays. X-ray powder diffractograms obtained of these compounds were used for lattice parameter determination based on hexagonal system similar to that of host WSe₂.The crystallite size for each sample for different reflection is calculated using Scherrer's formula. Surface morphology as observed under optical microscope reflects that screw dislocation mechanism is responsible for growth of crystals. Electrical properties viz. Hall effect at room temperature, resistivity measurements at low temperature, and high pressure resistivity measurements indicates the semiconducting behaviour of Re_xW_1−xSe₂ (x = 0, 0.0005, 0.001, 0.05, 0.1) single crystals. Thermoelectric power measurements shows p-type nature of host WSe₂ whereas n-type nature of rhenium doped WSe₂ which matches with the results of Hall effect.     

CVT growth of zirconium sulphoselenide single crystals

Large single crystals of a few important members (x=0, 1, 2) of the series ZrS _x Se_2−x compounds have been obtained by chemical vapour (iodine) transport method. The crystals have been characterized for several properties. Their semiconducting nature is inferred from resistivity vs temperature measurements, their optical absorption data reveal indirect gap transitions, their thermoscans indicate their stability over a limited temperature range, and they essentially grow by the mechanism of two dimensional layer propagation.     

Optical properties of TlInS2 layered single crystals near the absorption edge

The sample thickness effect on the optical properties of TlInS₂ layered crystals has been investigated at room temperature. The absorption coefficient of the samples calculated from the experimental transmittance and reflectance in the photon energy range of 1.10–3.10 eV has two absorption regions. The first is a long-wavelength region of 1.16–1.28 eV. The second region lies above 2.21 eV with a thickness-dependent indirect band gap. The energy gap decreases from 2.333 to 2.255 eV as the sample thickness increases from 27 to 66 μm. The differential spectra of absorption coefficient demonstrates the existence of a thickness-dependent impurity level being lowered from 2.360 to 2.307 eV as sample thickness increases from 27 to 66 μm.     

Effect of the substrate temperature on the structural, optical and electrical properties of spray-deposited CdS:B films

Boron doped CdS films have been deposited by spray pyrolysis method onto glass substrate temperature in the range of 350–450 °C. And the effect of substrate temperature (T _s) on the structural, electrical and optical properties of the films were studied. The structural properties of boron doped CdS films have been investigated by (XRD) X-ray diffraction techniques. The X-ray diffraction spectra showed that boron doped CdS films are polycrystalline and have a hexagonal (wurtzite) structure. By using SEM analysis, the surface morphology of the films was observed as an effect of the variation of substrate temperature. The substrate temperature is directly related with the shift detected in the band gap values derived from optical of parameters and the direct band gap values were found to be in the region of 2.08–2.44 eV. The electrical studies showed that the film deposited at the substrate temperature 400 °C had high carrier concentration and Hall mobility and minimum resistivity. This resistivity value decreased with increase in temperature up to 400 °C indicating the semiconducting nature of B- doped CdS films. The lattice parameter, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature (T _s ).     

Synthesis and characterizations of CdS nanorods by SILAR method: effect of film thickness

In this investigation, we have successfully synthesized CdS nanorods by simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method. The effect of film thickness on the physico-chemical properties such as structural, morphological, wettability, optical, and electrical properties of CdS nanorods has been investigated. The XRD pattern revealed that CdS films are polycrystalline with hexagonal crystal structure. SEM and TEM images showed that CdS film surface are composed of spherical grains along with some spongy cluster and an increase in film thickness up to 1.23 μm causes the formation of matured nanorods having diameter 150–200 nm. The increases in water contact angle form 105° to 130° have been observed as film thickness increases from 0.13 to 1.23 μm indicating hydrophobic nature. The optical band gap was found to be increased from 2.02 to 2.2 eV with increase in film thickness. The films showed the semiconducting behavior with room temperature electrical resistivity in the range of 10⁴–10⁶ Ω cm and have n-type electrical conductivity.     

Properties of AgInSe<Subscript>2</Subscript> films grown by magnetron sputtering

n-Type AgInSe₂ films 0.5 to 0.9 μm thick were grown by dc magnetron sputtering. As targets, we used AgInSe₂ crystals grown by a modified Bridgman process using high-purity precursors. The crystal structure, morphology, electrical conductivity, and Hall coefficient of the films were studied at various temperatures. We determined the optimal growth and annealing temperatures of the films (500 and 250°C, respectively). Using structures based on the films, we obtained the spectral dependences of their photoresponse, established the nature of interband transitions in the films, and evaluated their band gap. The ability to vary electrical and optical properties with no changes in stoichiometry is of interest for concentrated solar power applications.     

In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide

Au-doped ReS₂ layer crystals were grown by chemical vapour method with iodine as the transport agent. Room temperature Hall effect measurement showed p-type semiconducting character for the doped sample. The electrical conductivities parallel and perpendicular to the crystal b-axis were investigated. The near band-edge temperature-dependent in-plane anisotropic optical properties were studied by the polarization-dependent photoconductivity measurements, with the incident light beam parallel and perpendicular to the crystal b-axis, in the temperature range from 20 to 300 K. The influence of Au in the measured conductivity anisotropy and photoconductivity spectra of doped ReS₂ were analysed and discussed.     

Copper nitride films deposited by dc reactive magnetron sputtering

Copper nitride (Cu₃N) films were deposited on glass substrates by sputtering of copper target under various substrate temperatures in the range 303–523 K using dc reactive magnetron sputtering. The substrate temperature highly influenced the structural, mechanical, electrical and optical properties of the deposited films. The X-ray diffraction measurements showed that the films were of polycrystalline nature and exhibit preferred orientation of (111) phase of Cu₃N. The microhardness of the films increased from 2.7 to 4.4 GPa with the increase of substrate temperature from 303 to 473 K thereafter decreased to 4.1 GPa at higher temperature of 523 K. The electrical resistivity of the films decreased from 8.7 × 10⁻¹ to 1.1 × 10⁻³ Ωcm and the optical band gap decreased from 1.89 to 1.54 eV with the increase of substrate temperature from 303 to 523 K respectively.     

Effect of deposition conditions on the InP thin films prepared by spray pyrolysis method

InP thin films were prepared by spray pyrolysis technique using aqueous solutions of InCl₃ and Na₂HPO₄, which were atomized with compressed air as carrier gas. The InP thin films were obtained on glass substrates. Thin layers of InP have been grown at various substrate temperatures in the range of 450–525°C. The structural properties have been determined by using X-ray diffraction (XRD). The changes observed in the structural phases during the film formation in dependence of growth temperatures are reported and discussed. Optical properties, such as transmission and the band gap have been analyzed. An analysis of the deduced spectral absorption of the deposited films revealed an optical direct band gap energy of 1.34–1.52 eV for InP thin films. The InP films produced at a substrate temperature 500°C showed a low electrical resistivity of 8.12 × 10³ Ω cm, a carrier concentration of 11.2 × 10²¹ cm⁻³, and a carrier mobility of 51.55 cm²/Vs at room temperature.     

Synthesis,crystal growth and characterization of novel semiorganic nonlinear optical crystal: Dichlorobis(l-proline)zinc(II)

Single crystals of the semiorganic material, dichlorobis(l-proline)zinc(II) (DCBPZ), were grown from aqueous solution. The grown crystals were tested by single crystal X-ray diffraction, energy-dispersive spectrometry, FT-IR, UV–vis and TG–DTA. The structural prefection of the grown crystals has been analyzed by high-resolution X-ray diffraction (HRXRD) rocking curve measurements. The dielectric and mechanical behavior of the specimen was also studied. The SHG efficiency of DCBPZ is three times greater than that of KDP. Measuring transmittance of DCBPZ permitted the calculation of the refractive index n, the extinction coefficient K and both the real ?_r and imaginary ?_i components of the dielectric constant as functions of photon energy. The optical band gap of DCBPZ is 4.8 eV.     

Effect of oxygen content on the electrical properties of YBa2Cu3O7−x single crystals

The effect of oxygen content in the single crystals of high-temperature superconductor YBa₂Cu₃O_7−x on the electrical resistivity, the Hall effect in the plane perpendicular to thec axis and the energy gap Δ, measured with tunnelling electron microscope, has been studied. The distribution of the gap along the surface of the crystal was also studied. The results of the study on the relationship between the magnitude of the energy gap Δ and the superconducting transition temperatureT _c of single crystals with various oxygen contents are approximated by the linear dependence 2Δ_av=4·4kT _c .     

Melt growth and characterization of Mg2Si bulk crystals

We have grown Mg₂Si bulk crystals by the vertical Bridgman method using a high-purity Mg (6N-up) source. The grown crystals were single-phase Mg₂Si and had well-developed grains (1-5 mm³). Laue observations and SEM-EDX observations confirmed that crystalline quality in the grains was single crystal with stoichiometric composition. Electron concentration of the single crystalline specimens grown from 6N-up-Mg was 4.0 × 10¹⁵ cm^− 3 at room temperature (RT). This value is more than one order of magnitude lower than that of specimens grown from 4N-Mg [(5-7) × 10¹⁶ cm^− 3]. The Hall mobility of 14,500 cm²/Vs was observed at 45 K in the crystals grown from 6N-up-Mg. We also found that Al impurity plays an important role in the crystals grown from a low-purity Mg source. From the optical absorption measurement, we estimated that the indirect energy gap was about 0.66 eV at 300 K and about 0.74 eV at 4 K.