预估CMOS器件辐照后热退火效应的加速实验方法

介绍了一种利用等时退火法预估CMOS器件辐照后长时间等温退火行为的加速实验方怯。为了找到两种退火在时间上的相应关系，依据每一步等时退火相当于有相同电荷逃逸水平的等温退火时间。利用典型CC4007CMOS器件的25-250℃等时退火数据预估了100和25℃等温退火的长时间行为，预估结果和实验结果符合得很好。     

透明陶瓷MgAl2O4辐照退火效应的正电子湮没谱研究

首次采用正电子湮没寿命谱的方法，并同时应用PATFIT程序和MELT程序进行解谱，研究了透明陶瓷MgAl2O4被电子、质子和γ射线辐照后缺陷的退火特性，发现了透明陶瓷MgAl2O4在三种射线辐照后的退火过程中缺陷存在着相同的分解和聚积过程，并确缺陷的分解温度250℃和消除温度500℃。     

CMOS器件实验室总剂量辐照评估方法研究

主要研究了LH4007RH-CMOS器件与60Co γ射线辐照总剂量、剂量率以及辐照后退火时间和温度的响应关系.试验研究表明,按照美军标1019.4试验步骤,如果器件经0.5～3Gy/s高剂量率辐照后再附加25℃的室温退火,评估氧化物陷阱电荷效应就显得不太保守.对于评估器件空间界面态效应,建议仍使用一星期 100℃的高温退火.     

电荷耦合器件的~(60)Co γ射线辐照损伤退火效应

基于60Coγ射线辐照后的商用电荷耦合器件(CCD),对室温退火和100℃高温退火实验进行研究。考察了CCD的功耗电流、输出信号电压波形及光响应灵敏度等参数的变化。结果表明,CCD辐照过程中产生的氧化物电荷和界面态导致了CCD参数在室温和高温退火中的不同表现。     

NMOS晶体管的退火特性研究

探讨了加固型ＣＣ４００７经＾６０Ｃｏγ射线辐照后ＮＭＯＳ晶体管的退火特性，研究了辐照敏感参数随辐照剂量、退火温度、退火时间和退火偏置的变化关系。经相同总剂量辐照的器件，高源１００℃下的退火速度远大于室温２５℃下退火速度。２５￣２５０℃下的等时退火，其退火程度接近１６８ｈ的１００℃等温退火。对不同的退火情况，退火偏置的作用是相似的，＋５Ｖ栅偏压退火速度大于０Ｖ栅偏压和浮空退火速度。对氧化物陷阱电荷的     

中子辐照注量对单晶硅中缺陷退火行为的影响

用正电子湮没寿命和多普勒加宽测量研究了不同注量中子辐照的氩气氛区熔单晶硅中缺陷的退火行为，发现不同中子注量辐照时，辐照致空位型缺陷的退火行为十分类似，并均在５５０℃时退火消除；但辐照致双空位浓度、二次双空位和四空位型缺陷的产生、浓度和消除温度很不相同。简单陷阱模型不适用于５００℃以下退火的离中子注量辐照的单晶硅，但能部分适用于中等注量辐照的单晶硅。     

中子辐照下钼的低温热激活变形和辐照软化

本文对退火和应力释放两种热处理中，钼在低温变形条件下的中子辐照效应进行了研究。样品在高通量同位素反应堆的冷却剂温度下进行辐照，剂量在7．2×10^-5-0．28dpa（单个原子的辐照损伤位移）之间。拉伸测试在-50～100℃下进行，应变速度为1×10^-5～1×10^-2s^-1。基于拉伸测试数据的热激活分析被用来研究低温变形机理。退火后的钼在低剂量辐照后，出现辐照软化效应以及屈服应力对测试温度和应变速率的依赖性降低的现象。高剂量的中子辐照只会引起冷硬化。应力释放的钼与测试温度和屈服应力的应变速度的依赖性要弱于退火后的钼，而且其在辐照前后的屈服应力基本不变。激活参数实验值与位错模型的理论预测比较表明：四方应变位错反应的弗舍尔模型预测了清除作用，与双纽模型相比较，其对激活过程进行了更好的描述。辐射与测试温度及应变速率之间不断减弱的依赖关系可以用因中子辐照造成的间隙溶质的俘获作用而引起有效应力的降低来解释。     

中子辐照GaAs的变温正电子寿命研究

用正电子湮没寿命谱研究中子辐照前后半绝缘ＧａＡｓ在等时退火过程中的缺陷行为．发现辐照后的样品大约从７０℃起空位－填隙子对和空位－反格点缺陷开始复合．５００℃前空位和空位团可消除．７４０℃后可能会重新产生缺陷。ＶＡｓ是一种浅势阱，对正电子的束缚能大约为０．０３１－０．０３２ｅＶ。     

Mo/Si/C多层膜退火后的同步辐射研究

通过对Mo/Si周期多层膜添加碳(C)层、进行高温退火处理,研究了Mo/Si/C多层膜进行热处理后在同步辐照条件下对薄膜相关物理特性的影响。发现Mo/Si周期性多层膜增加C层后不影响薄膜的反射特性,退火前45°入射角92 eV处反射率高达42％;热稳定性也有所提高,在600℃高温退火后仍能保持6.8％(97 eV处)的反射率。同时,由于非晶C在高温条件下的扩散导致薄膜结构发生变化,观测到薄膜的小角衍射曲线中出现并临的双衍射峰结构。     

PDSOI CMOS SRAM总剂量辐射及退火效应的研究

通过对PDSOI CMOS静态随机存储器(SRAM)在静态偏置条件下器件功耗电流和功能错误数随辐射总剂量、退火时间的变化规律,以及不同温度(25℃和100℃)条件的退火行为进行研究,探讨了SOI工艺SRAM的总剂量辐射损伤机制及辐照环境中功耗电流变化与器件功能之间的相关性,为进一步深入研究大规模SOI集成电路的抗总剂量...     

Defect recovery in proton irradiated Ti-modified stainless steel probed by positron annihilation

The defect recovery in proton irradiated Ti-modified D9 steel has been studied by positron annihilation isochronal and isothermal annealing measurements. D9 samples have been irradiated with 3 MeV protons followed by isochronal annealing at various temperatures in the range of 323 to 1273 K. The dramatic decrease in positron annihilation parameters, viz. positron lifetime and Doppler S-parameter, around 500 K indicates the recovery of vacancy-defects. A clear difference in the recovery beyond 700 K is observed between solution annealed and cold worked state of D9 steel due to the precipitation of TiC in the latter. Isothermal annealing studies have been carried out at the temperature wherein vacancies distinctly migrate. Assuming a singly activated process for defect annealing, the effective activation energy for vacancy migration is estimated to be 1.13 ± 0.08 eV.     

A study on recovery kinetics of radiation damage in graphite

Through the measurements of galvanomagnetic properties, an annealing study has been made of a natural graphite compact irradiated with fast neutrons to a total dose of $\text{2.3 × 10}{}^{18}\text{n/cm}{}^2$. The isothermal annealing has revealed that the recovery taking place near 200°C consists of two atomic processes having different values of activation energy, 0.9 eV in the first stage and 0.45 eV in the second. The physical significance of those energy values is discussed with reference to the past experimental work. Discussions are also given of the isochronal annealing conducted over a temperature range up to 1000°C. However, the definite solution is still prevented of the mechanism, because of a discrepancy lying between theory and experiment on the migration energy of interstitial carbon atoms.     

双极运算放大器在不同电子能量下的辐射效应和退火特性

介绍了LM837双极运算放大器分别在不同能量（1。8、1 MeV）不同束流、相同能量不同束流电子辐照环境中的响应特性及变化规律。分析了不同偏置状态下其电离辐照敏感参数在辐照后3种退火温度（室温,100、125 ℃）下随时间的变化,并讨论了引起电参数失效的机理。结果表明：与1 MeV 辐照相比,1。8 MeV电子辐照引起的LM837辐射损伤更明显;辐照过程中正偏条件下的偏置电流变化较零偏时的稍大;LM837辐照后的退火行为与温度有较大的依赖关系,而这种关系与辐照感生的界面态密度增长直接相关。     

A saturable-trap analysis of solute segregation applied to oxygen trapping in neutron-irradiated vanadium

The activation energy for the 0.2T_m resistivity annealing stage in neutron-irradiated vanadium containing 61 wt ppm oxygen was determined to be (1.21 ± 0.06) eV. This value is reasonably close to the oxygen diffusion activation energy in vanadium of 1.26–1.28 eV. Thus, an extrinsic mechanism for the 0.2T_m annealing stage is indicated, involving oxygen migration and trapping at radiation-produced defect clusters. A simple saturable trap model for the trapping of interstitial impurity atoms at radiation-produced defect clusters is described. The model is applied to the isothermal annealing curves for vanadium containing oxygen. A good fit to the shape of the annealing curves is obtained and approximate agreement to the measured activation energy is found. However, the model appears to overestimate the amount of oxygen participating in the trapping process.     

Activation Energy of Defects in Neutron Irradiated Silicon

Annealing studies of defects introduced in Si by a fast neutron flux have been made, using planar transistor samples to follow changes in minority carrier lifetime. An activation energy of 1.2 ± 0.1 eV was obtained from measurements of annealing over the range 100°C to 156°C.     

Raman and optical absorption studies of proton bombarded CsI

CsI single crystals, which have the simple cubic structure, have been bombarded with 1 MeV protons at a temperature close to 300 K. Optical absorption and Raman studies have identified most of the defects created. These include F and F₂ centres, and V centres having absorption bands at 2.7 eV and 3.4 eV, which grow together during irradiation. The Raman studies identify these latter centres as having the structure. Isochronal and isothermal annealing experiments show a mutual decay of the F-type centres and these V centres in a second order reaction with an activation energy of 1.28 eV. The results are discussed in relation to the excitonic mechanism of defect production and the formation of interstitial iodine aggregates of various types in alkali iodides.     

Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon

The annealing of interface states after an X-ray dose of 10 Mrad (SiO/sub 2/) under 1-MV/cm bias is studied on [100], [110], and [111] silicon. During annealing the bias is 1 MV/cm. Annealing times range from under an hour to hundreds of hours, and the temperature ranges from 75 to 175 degrees C. Using charge pumping, the energy distribution of interface states within the bandgap is determined. After annealing, the shape of the interface-state density curve implies that one or more defects other than P/sub b0/ and P/sub b1/ are present. Comparison of the interface-state density curves before and after annealing shows that a redistribution of interface-state density occurs over a large portion of the time-temperature range studied. The density near 0.4 eV above the valence band decreases and the density near 0.7 eV increases although the average density does not significantly change. Based upon the time scale and activation energy of the redistribution, a model is proposed in which the rate-limiting step is water diffusion within the gate oxide to the interface. This model provides a framework for a transformation among interface defects that accounts for the observed redistribution. Further tests for this model are discussed.<>     

Precision dilatometer analysis of neutron-irradiated nuclear graphite recovery process up to 1673 K

Specimens of two kinds of isotropic nuclear graphite, IG-110U and ETP-10, were neutron-irradiated at fluence of 1.92 × 10²⁴ n/m² (E > 1.0 MeV) at 473 K. The recoveries of the macroscopic lengths of these specimens during isothermal and isochronal annealing at temperatures of up to 1673 K were investigated in a step-wise manner by using a precision dilatometer. The macroscopic lengths after isochronal annealing for 6 h at each temperature decreased gradually as the temperature was increased to 1673 K. The recovery trends of the c-axis and a-axis lattice parameters differed from one another, and from the macroscopic length recovery trends. For the IG-110U specimen, the activation energies (E_a) of macroscopic volume recovery corresponding to annealing at 523–773, 773–923, 923–1073, and 1073–1173 K were found to be 0.15, 0.34, 0.73, and 2.59 eV, respectively. For the ETP-10 specimen, the E_a corresponding to 523–923, 923–1223, and 1223–1373 K were determined to be 0.15, 0.46, and 2.19 eV, respectively. These results indicate that both graphite specimens underwent three or four stages of macroscopic length recovery between 523 K and the annealing temperatures at which their initial lengths were recovered. It is suggested that during the first stage recovery proceeded via the migration of single interstitials along the basal plane and the resulting V-I recombination. In the middle stages, recovery occurred due to the migration of interstitial groups such as C₂ along the basal plane, while in the last stage, it proceeded via through-layer migration of interstitials or migration of single vacancies.     

Short-Term Annealing in Electron-Irradiated p-Type Silicon

Studies of short-term annealing of minority carrier lifetime in bulk p-type silicon following ~1.4 MeV pulsed electron irradiation are reported. Investigations were performed on vacuum-float-zone boron-doped material in the temperature range 235-3860K and the maximum fluence employed was ~5 x 1012 electrons/cm . Simple exponential recovery under isothermal conditions, a characteristic of first order reaction kinetics, was observed. The amount of unstable damage varied as exp (-t/?R), where ?R is the characteristic recovery time. The temperature dependence of ?R yielded an activation energy of 0. 32 ± 0. 03 eV for the recovery process. The current results, when extrapolated to lower temperatures, compare quite closely with Watkins' EPR data for similar material. It is concluded that the present data is consistent with the observation of neutral vacancy annealing.     

静态随机存储器总剂量辐射及退火效应研究

通过比较1Mbit商用静态随机存储器（SRAM）在6种不同偏置条件下器件参数（静态和动态功耗电流）和功能参数（错误数）随辐射总剂量、退火时间的变化规律,研究了不同工作状态对辐射损伤的影响,以及不同偏置和温度（25℃和100℃）条件下的退火机制。结果表明：不同偏置对器件参数和功能退化及退火恢复有较大影响;静态和动态功耗电流为器件的敏感参数,在静态偏置条件下器件的辐射损伤最严重。