Atomically Thin Oxyhalide Solar‐Blind Photodetectors

2D wide‐bandgap semiconductors demonstrate great potential in fabricating solar‐blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar‐blind photodetectors still limits their practical applications. Here, high‐responsivity solar‐blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W^?1 and a specific detectivity of 2.2 × 10¹⁰ Jones under 250 nm illumination with 17.8 µW cm^?2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W^?1 at 450 K under solar‐blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar‐blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.     

Infrared Solution‐Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and Jsc in Excess of 34 mA cm−2

Developing low‐cost photovoltaic absorbers that can harvest the short‐wave infrared (SWIR) part of the solar spectrum, which remains unharnessed by current Si‐based and perovskite photovoltaic technologies, is a prerequisite for making high‐efficiency, low‐cost tandem solar cells. Here, infrared PbS colloidal quantum dot (CQD) solar cells employing a hybrid inorganic–organic ligand exchange process that results in an external quantum efficiency of 80% at 1.35 µm are reported, leading to a short‐circuit current density of 34 mA cm^?2 and a power conversion efficiency (PCE) up to 7.9%, which is a current record for SWIR CQD solar cells. When this cell is placed at the back of an MAPbI₃ perovskite film, it delivers an extra 3.3% PCE by harnessing light beyond 750 nm.     

Enhanced Stability and Tunable Photoluminescence in Perovskite CsPbX3/ZnS Quantum Dot Heterostructure

All‐inorganic perovskite CsPbX₃ (X = Cl, Br, I) and related materials are promising candidates for potential solar cells, light emitting diodes, and photodetectors. Here, a novel architecture made of CsPbX₃/ZnS quantum dot heterodimers synthesized via a facile solution‐phase process is reported. Microscopic measurements show that CsPbX₃/ZnS heterodimer has high crystalline quality with enhanced chemical stability, as also evidenced by systematic density functional theory based first‐principles calculations. Remarkably, depending on the interface structure, ZnS induces either n‐type or p‐type doping in CsPbX₃ and both type‐I and type‐II heterojunctions can be achieved, leading to rich electronic properties. Photoluminescence measurement results show a strong blue‐shift and decrease of recombination lifetime with increasing sulfurization, which is beneficial for charge diffusion in solar cells and photovoltaic applications. These findings are expected to shed light on further understanding and design of novel perovskite heterostructures for stable, tunable optoelectronic devices.     

Ultrathin,Core–Shell Structured SiO2 Coated Mn2+‐Doped Perovskite Quantum Dots for Bright White Light‐Emitting Diodes

All‐inorganic semiconductor perovskite quantum dots (QDs) with outstanding optoelectronic properties have already been extensively investigated and implemented in various applications. However, great challenges exist for the fabrication of nanodevices including toxicity, fast anion‐exchange reactions, and unsatisfactory stability. Here, the ultrathin, core–shell structured SiO₂ coated Mn²⁺ doped CsPbX₃ (X = Br, Cl) QDs are prepared via one facile reverse microemulsion method at room temperature. By incorporation of a multibranched capping ligand of trioctylphosphine oxide, it is found that the breakage of the CsPbMnX₃ core QDs contributed from the hydrolysis of silane could be effectively blocked. The thickness of silica shell can be well‐controlled within 2 nm, which gives the CsPbMnX₃@SiO₂ QDs a high quantum yield of 50.5% and improves thermostability and water resistance. Moreover, the mixture of CsPbBr₃ QDs with green emission and CsPbMnX₃@SiO₂ QDs with yellow emission presents no ion exchange effect and provides white light emission. As a result, a white light‐emitting diode (LED) is successfully prepared by the combination of a blue on‐chip LED device and the above perovskite mixture. The as‐prepared white LED displays a high luminous efficiency of 68.4 lm W^?1 and a high color‐rendering index of Ra = 91, demonstrating their broad future applications in solid‐state lighting fields.     

Epitaxial Growth of CsPbX3 (X = Cl,Br, I) Perovskite Quantum Dots via Surface Chemical Conversion of Cs2GeF6 Double Perovskites: A Novel Strategy for the Formation of Leadless Hybrid Perovskite Phosphors with Enhanced Stability

Lead halide perovskites (LHPs) have received increased attention owing to their intriguing optoelectronic and photonic properties. However, the toxicity of lead and the lack of long‐term stability are potential obstacles for the application of LHPs. Herein, the epitaxial synthesis of CsPbX₃ (X = Cl, Br, I) perovskite quantum dots (QDs) by surface chemical conversion of Cs₂GeF₆ double perovskites with PbX₂ (X = Cl, Br, I) is reported. The experimental results show that the surface of the Cs₂GeF₆ double perovskites is partially converted into CsPbX₃ perovskite QDs and forms a CsPbX₃/Cs₂GeF₆ hybrid structure. The theoretical calculations reveal that the CsPbBr₃ conversion proceeds at the Cs₂GeF₆ edge through sequential growth of multiple PbBr₆ ^4? layers. Through the conversion strategy, luminescent and color‐tunable CsPbX₃ QDs can be obtained, and these products present high stability against decomposition due to anchoring effects. Moreover, by partially converting red emissive Cs₂GeF₆:Mn⁴⁺ to green emissive CsPbBr₃, the CsPbBr₃/Cs₂GeF₆:Mn⁴⁺ hybrid can be employed as a low‐lead hybrid perovskite phosphor on blue LED chips to produce white light. The leadless CsPbX₃/Cs₂GeF₆ hybrid structure with stable photoluminescence opens new paths for the rational design of efficient emission phosphors and may stimulate the design of other functional CsPbX₃/Cs‐containing hybrid structures.     

Ultra‐Broadband Flexible Photodetector Based on Topological Crystalline Insulator SnTe with High Responsivity

Topological crystalline insulators (TCIs) are predicted to be a promising candidate material for ultra‐broadband photodetectors ranging from ultraviolet (UV) to terahertz (THz) due to its gapless surface state and narrow bulk bandgap. However, the low responsivity of TCIs‐based photodetectors limits their further applications. In this regard, a high‐performance photodetector based on SnTe, a recently developed TCI, working in a broadband wavelength range from deep UV to mid‐IR with high responsivity is reported. By taking advantage of the strong light absorption and small bandgap of SnTe, photodetectors based on the as‐grown SnTe crystalline nanoflakes as well as specific short channel length achieve a high responsivity (71.11 A W^?1 at 254 nm, 49.03 A W^?1 at 635 nm, 10.91 A W^?1 at 1550 nm, and 4.17 A W^?1 at 4650 nm) and an ultra‐broad spectral response (254–4650 nm) simultaneously. Moreover, for the first time, a durable flexible SnTe photodetector fabricated directly on a polyethylene terephthalate film is demonstrated. These results prove the great potential of TCIs as a promising material for integrated and flexible optoelectronic devices.     

Europium and Acetate Co‐doping Strategy for Developing Stable and Efficient CsPbI2Br Perovskite Solar Cells

All‐inorganic perovskite solar cells have developed rapidly in the last two years due to their excellent thermal and light stability. However, low efficiency and moisture instability limit their future commercial application. The mixed‐halide inorganic CsPbI₂Br perovskite with a suitable bandgap offers a good balance between phase stability and light harvesting. However, high defect density and low carrier lifetime in CsPbI₂Br perovskites limit the open‐circuit voltage (V_oc < 1.2 V), short‐circuit current density (J_sc < 15 mA cm^?2), and fill factor (FF < 75%) of CsPbI₂Br perovskite solar cells, resulting in an efficiency below 14%. For the first time, a CsPbI₂Br perovskite is doped by Eu(Ac)₃ to obtain a high‐quality inorganic perovskite film with a low defect density and long carrier lifetime. A high efficiency of 15.25% (average efficiency of 14.88%), a respectable V_oc of 1.25 V, a reasonable J_sc of 15.44 mA cm^?2, and a high FF of 79.00% are realized for CsPbI₂Br solar cells. Moreover, the CsPbI₂Br solar cells with Eu(Ac)₃ doping demonstrate excellent air stability and maintain more than 80% of their initial power conversion efficiency (PCE) values after aging in air (relative humidity: 35–40%) for 30 days.     

Self‐Formed Electronic/Ionic Conductive Fe3S4 @ S @ 0.9Na3SbS4⋅0.1NaI Composite for High‐Performance Room‐Temperature All‐Solid‐State Sodium–Sulfur Battery

Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite cathode is prepared through one‐step wet‐mechanochemical milling procedure. During milling process, ionic conduction pathway is self‐formed in the composite due to the formation of 0.9Na₃SbS₄?0.1NaI electrolyte without further annealing treatment. Meanwhile, the introduction of Fe₃S₄ can increase the electronic conductivity of the composite cathode by one order of magnitude and nearly double enhance the ionic conductivities. Besides, the aggregation of sulfur is effectively suppressed in the obtained Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite, which will enhance the contact between sulfur and 0.9Na₃SbS₄?0.1NaI electrolyte, leading to a decreased interfacial resistance and improving the electrochemical kinetics of sulfur. Therefore, the resultant all‐solid‐state sodium–sulfur battery employing Fe₃S₄ @ S @ 0.9Na₃SbS₄?0.1NaI composite cathode shows discharge capacity of 808.7 mAh g^?1 based on Fe₃S₄@S and a normalized discharge capacity of 1040.5 mAh g^?1 for element S at 100 mA g^?1 for 30 cycles at room temperature. Moreover, the battery also exhibits excellent cycling stability with a reversible capacity of 410 mAh g^?1 at 500 mA g^?1 for 50 cycles, and superior rate capability with capacities of 952.4, 796.7, 513.7, and 445.6 mAh g^?1 at 50, 100, 200, and 500 mA g^?1, respectively. This facile strategy for sulfur‐based composite cathode is attractive for achieving room‐temperature sodium–sulfur batteries with superior electrochemical performance.     

Novel UV–Visible Photodetector in Photovoltaic Mode with Fast Response and Ultrahigh Photosensitivity Employing Se/TiO2 Nanotubes Heterojunction

A feasible strategy for hybrid photodetector by integrating an array of self‐ordered TiO₂ nanotubes (NTs) and selenium is demonstrated to break the compromise between the responsivity and response speed. Novel heterojunction between the TiO₂ NTs and Se in combination with the surface trap states at TiO₂ help regulate the electron transport and facilitate the separation of photogenerated electron–hole pairs under photovoltaic mode (at zero bias), leading to a high responsivity of ≈100 mA W^?1 at 620 nm light illumination and the ultrashort rise/decay time (1.4/7.8 ms). The implanting of intrinsic p‐type Se into TiO₂ NTs broadens the detection range to UV–visible (280–700 nm) with a large detectivity of over 10¹² Jones and a high linear dynamic range of over 80 dB. In addition, a maximum photocurrent of ≈10⁷ A is achieved at 450 nm light illumination and an ultrahigh photosensitivity (on/off ratio up to 10⁴) under zero bias upon UV and visible light illumination is readily achieved. The concept of employing novel heterojunction geometry holds great potential to pave a new way to realize high performance and energy‐efficient optoelectronic devices for practical applications.     

Highly Efficient 2D/3D Hybrid Perovskite Solar Cells via Low‐Pressure Vapor‐Assisted Solution Process

The fabrication of multidimensional organometallic halide perovskite via a low‐pressure vapor‐assisted solution process is demonstrated for the first time. Phenyl ethyl‐ammonium iodide (PEAI)‐doped lead iodide (PbI₂) is first spin‐coated onto the substrate and subsequently reacts with methyl‐ammonium iodide (MAI) vapor in a low‐pressure heating oven. The doping ratio of PEAI in MAI‐vapor‐treated perovskite has significant impact on the crystalline structure, surface morphology, grain size, UV–vis absorption and photoluminescence spectra, and the resultant device performance. Multiple photoluminescence spectra are observed in the perovskite film starting with high PEAI/PbI₂ ratio, which suggests the coexistence of low‐dimensional perovskite (PEA₂MA_n?1Pb_nI_3n+1) with various values of n after vapor reaction. The dimensionality of the as‐fabricated perovskite film reveals an evolution from 2D, hybrid 2D/3D to 3D structure when the doping level of PEAI/PbI₂ ratio varies from 2 to 0. Scanning electron microscopy images and Kelvin probe force microscopy mapping show that the PEAI‐containing perovskite grain is presumably formed around the MAPbI₃ perovskite grain to benefit MAPbI₃ grain growth. The device employing perovskite with PEAI/PbI₂ = 0.05 achieves a champion power conversion efficiency of 19.10% with an open‐circuit voltage of 1.08 V, a current density of 21.91 mA cm^?2, and a remarkable fill factor of 80.36%.     

Inorganic lead-based halide perovskites: From fundamental properties to photovoltaic applications

Compared with organic–inorganic hybrid halide perovskites (OIHPs), inorganic cesium lead halide perovskites (CsPbX₃) possess superior intrinsic stability for high temperatures and are considered one of the most attractive research hotspots in the perovskite photovoltaic (PV) field in the past several years. The PCE of CsPbX₃ inorganic perovskite solar cells (IPSCs) has increased from 2.9% in 2015 to more than 20% with excellent stability. There are still many on-going studies on the properties of perovskite materials and their applications in PV technology, thereby needing a thorough understanding. Here, the progress of inorganic perovskites is systematically introduced, including the fundamental properties of CsPbX₃ materials and CsPbX₃-based PV devices. The origins of stability and instability of CsPbX₃ and defects in CsPbX₃ are discussed. CsPbI₃-, CsPbI₂Br-, CsPbIBr₂- and CsPbBr₃-based PV devices and performance are comprehensively reviewed. The stabilization methods and mechanism for the photoactive phases of inorganic perovskites with low bandgap are emphasized. Reported strategies to boost the performance of CsPbX₃-based IPSCs are summarized. In the end, the potential of inorganic perovskites is evaluated, which opens up new prospects for the commercialization of IPSCs.     

Ultrahigh Responsivity in Graphene–ZnO Nanorod Hybrid UV Photodetector

Ultraviolet (UV) photodetectors based on ZnO nanostructure/graphene (Gr) hybrid‐channel field‐effect transistors (FETs) are investigated under illumination at various incident photon intensities and wavelengths. The time‐dependent behaviors of hybrid‐channel FETs reveal a high sensitivity and selectivity toward the near‐UV region at the wavelength of 365 nm. The devices can operate at low voltage and show excellent selectivity, high responsivity (R_I ), and high photoconductive gain (G). The change in the transfer characteristics of hybrid‐channel FETs under UV light illumination allows to detect both photovoltage and photocurrent. The shift of the Dirac point (V _Dirac) observed during UV exposure leads to a clearer explanation of the response mechanism and carrier transport properties of Gr, and this phenomenon permits the calculation of electron concentration per UV power density transferred from ZnO nanorods and ZnO nanoparticles to Gr, which is 9 × 10¹⁰ and 4 × 10¹⁰ per mW, respectively. The maximum values of R_I and G infer from the fitted curves of R_I and G versus UV intensity are 3 × 10⁵ A W^?1 and 10⁶, respectively. Therefore, the hybrid‐channel FETs studied herein can be used as UV sensing devices with high performance and low power consumption, opening up new opportunities for future optoelectronic devices.     

A Semitransparent Inorganic Perovskite Film for Overcoming Ultraviolet Light Instability of Organic Solar Cells and Achieving 14.03% Efficiency

Organic solar cells (OSCs) can be unstable under ultraviolet (UV) irradiation. To address this issue and enhance the power conversion efficiency (PCE), an inorganic‐perovskite/organic four‐terminal tandem solar cell (TSC) based on a semitransparent inorganic CsPbBr₃ perovskite solar cell (pero‐SC) as the top cell and an OSC as bottom cell is constructed. The high‐quality CsPbBr₃ photoactive layer of the planar pero‐SC is prepared with a dual‐source vacuum coevaporation method, using stoichiometric precursors of CsBr and PbBr₂ with a low evaporation rate. The resultant opaque planar pero‐SC exhibits an ultrahigh open‐circuit voltage of 1.44 V and the highest reported PCE of 7.78% for a CsPbBr₃‐based planar pero‐SC. Importantly, the devices show no degradation after 120 h UV light illumination. The related semitransparent pero‐SC can almost completely filter UV light and well maintain photovoltaic performance; it additionally shows an extremely high average visible transmittance. When it is used to construct a TSC, the top pero‐SC acting as a UV filter can utilize UV light for photoelectric conversion, avoiding the instability problem of UV light on the bottom OSC that can meet the industrial standards of UV‐light stability for solar cells, and leading to the highest reported PCE of 14.03% for the inorganic‐perovskite/organic TSC.     

Space‐Confined Growth of Individual Wide Bandgap Single Crystal CsPbCl3 Microplatelet for Near‐Ultraviolet Photodetection

Perovskite photodetectors (PDs) with tunable detection wavelength have attracted extensive attention due to the potential application in the field of imaging, machine vision, and artificial intelligence. Most of the perovskite PDs focus on I‐ or Br‐based materials due to their easy preparation techniques. However, their main photodetection capacity is situated in the visible region because of their narrower bandgap. Cl‐based wide bandgap perovskites, such as CsPbCl₃, are scarcely reported because of the bad film quality of the spin‐coated Cl‐based perovskite, due to the poor solubility of the precursor. Therefore, ultraviolet detection using high‐quality full inorganic perovskite films, especially with high thermal stability of materials and devices, is still a big challenge. In this work, high‐quality single crystal CsPbCl₃ microplatelets (MPs) synthesized by a simple space‐confined growth method at low temperature for near‐ultraviolet (NUV) PDs are reported. The single CsPbCl₃ MP PDs demonstrate a decent response to NUV light with a high on/off ratio of 5.6 × 10³ and a responsivity of 0.45 A W^?1 at 5 V. In addition, the dark current is as low as pA level, leading to detectivity up to 10¹¹ Jones. Moreover, PDs possess good stability and repeatability.     

A Highly Sensitive Single Crystal Perovskite–Graphene Hybrid Vertical Photodetector

Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal‐structured device. Here, the first optimized vertical‐structured photodetector with the perovskite single crystal MAPbBr₃ as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W^?1) and high photodetectivity (≈2.02 × 10¹³ Jones) in a low light intensity (0.66 mW cm^?2) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 10³ is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high‐performance electronic and optoelectronic devices.     

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2D planar structures of nonlayered wide‐bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self‐confined chemical vapor deposition method is described. The enhanced spin‐triplet exciton (Z_f, 2.98 eV) luminescence and polarization‐enhanced second‐harmonic generation based on the 2D CuBr flakes demonstrate the potential of short‐wavelength luminescent applications. Solar‐blind and self‐driven ultraviolet (UV) photodetectors based on the as‐synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W^?1, an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 10¹¹ Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short‐wavelength light‐emitting devices, nonlinear optical devices, and UV photodetectors.     

Solution‐Processed 3D RGO–MoS2/Pyramid Si Heterojunction for Ultrahigh Detectivity and Ultra‐Broadband Photodetection

Molybdenum disulfide (MoS₂), a typical 2D metal dichalcogenide (2DMD), has exhibited tremendous potential in optoelectronic device applications, especially in photodetection. However, due to the weak light absorption of planar mono‐/multilayers, limited cutoff wavelength edge, and lack of high‐quality junctions, most reported MoS₂‐based photodetectors show undesirable performance. Here, a structurized 3D heterojunction of RGO–MoS₂/pyramid Si is demonstrated via a simple solution‐processing method. Owing to the improved light absorption by the pyramid structure, the narrowed bandgap of the MoS₂ by the imperfect crystallinity, and the enhanced charge separation/transportation by the inserted reduced graphene oxide (RGO), the assembled photodetector exhibits excellent performance in terms of a large responsivity of 21.8 A W^?1, extremely high detectivity up to 3.8 × 10¹⁵ Jones (Jones = cm Hz^1/2 W^?1) and ultrabroad spectrum response ranging from 350 nm (ultraviolet) to 4.3 µm (midwave infrared). These device parameters represent the best results for MoS₂‐based self‐driven photodetectors, and the detectivity value sets a new record for the 2DMD‐based photodetectors reported thus far. Prospectively, the design of novel 3D heterojunction can be extended to other 2DMDs, opening up the opportunities for a host of high‐performance optoelectronic devices.     

Ultrahigh Responsivity UV Photodetector Based on Cu Nanostructure/ZnO QD Hybrid Architectures

Strong near‐surface electromagnetic field formed by collective oscillation of electrons on Cu nanostructure a shows a strong dependence on geometry, offering a promising approach to boost the light absorption of ZnO photoactive layers with enhanced plasmon scattering. Here, a facile way to fabricate UV photodetectors with tunable configuration of the self‐assembled Cu nanostructures on ZnO thin films is reported. The incident lights are effectively confined in ZnO photoactive layers with the existence of the uplayer Cu nanostructures, and the interdiffusion of Cu atoms during fabrication of the Cu nanostructures can improve the carrier transfer in ZnO thin films. The optical properties of the hybrid architectures are successfully tailored over a control of the geometric evolution of the Cu nanostructures, resulting in significantly enhanced photocurrent and responsivity of 2.26 mA and 234 A W^?1 under a UV light illumination of 0.62 mW cm^?2 at 10 V, respectively. The photodetectors also exhibit excellent reproducibility, stability, and UV–visible rejection ratio (R_{370 nm}/R_{500 nm}) of ≈370, offering an approach of high‐performance UV photodetectors for practical applications.     

Oxygen‐Vacancy‐Introduced BaSnO3−δ Photoanodes with Tunable Band Structures for Efficient Solar‐Driven Water Splitting

To achieve excellent photoelectrochemical water‐splitting activity, photoanode materials with high light absorption and good charge‐separation efficiency are essential. One effective strategy for the production of materials satisfying these requirements is to adjust their band structure and corresponding bandgap energy by introducing oxygen vacancies. A simple chemical reduction method that can systematically generate oxygen vacancies in barium stannate (BaSnO₃ (BSO)) crystal is introduced, which thus allows for precise control of the bandgap energy. A BSO photoanode with optimum oxygen‐vacancy concentration (8.7%) exhibits high light‐absorption and good charge‐separation capabilities. After deposition of FeOOH/NiOOH oxygen evolution cocatalysts on its surface, this photoanode shows a remarkable photocurrent density of 7.32 mA cm^?2 at a potential of 1.23 V versus a reversible hydrogen electrode under AM1.5G simulated sunlight. Moreover, a tandem device constructed with a perovskite solar cell exhibits an operating photocurrent density of 6.84 mA cm^?2 and stable gas production with an average solar‐to‐hydrogen conversion efficiency of 7.92% for 100 h, thus functioning as an outstanding unbiased water‐splitting system.     

High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered (l00) Facet‐Oriented β‐Ga2O3 Nanobelts

Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β‐Ga₂O₃ multi‐layered nanobelts with (l00) facet‐oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As‐fabricated DUV solar‐blind photodetectors using (l00) facet‐oriented β‐Ga₂O₃ multi‐layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal‐to‐noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β‐Ga₂O₃ nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10^?14 A), a fast time response (<0.3 s), a high R_λ (≈851 A/W), and a high EQE (～4.2 × 10³). The present fabricated facet‐oriented β‐Ga₂O₃ multi‐layered nanobelt based devices will find practical applications in photodetectors or optical switches for high‐temperature environment.