17 GHz RF Front-Ends for Low-Power Wireless Sensor Networks

A 17 GHz low-power radio transceiver front-end implemented in a 0.25 $mu{hbox {m}}$ SiGe:C BiCMOS technology is described. Operating at data rates up to 10 Mbit/s with a reduced transceiver turn-on time of 2 $mu{hbox {s}}$, gives an overall energy consumption of 1.75 nJ/bit for the receiver and 1.6 nJ/bit for the transmitter. The measured conversion gain of the receiver chain is 25–30 dB into a 50 $Omega$ load at 10 MHz IF, and noise figure is 12 $pm$0.5 dB across the band from 10 to 200 MHz. The 1-dB compression point at the receiver input is $-$37 dBm and ${hbox{IIP}}_{3}$ is $-$25 dBm. The maximum saturated output power from the on-chip transmit amplifier is $-$1.4 dBm. Power consumption is 17.5 mW in receiver mode, and 16 mW in transmit mode, both operating from a 2.5 V supply. In standby, the transceiver supply current is less than 1 $mu{hbox {A}}$.      

2 MHz AO $Q$ -switched ${rm TEM}_{00}$ Grazing Incidence Laser With 3 at.% Neodymium Doped Nd:YVO$_{4}$

We present a detailed experimental and theoretical study of the ultrahigh repetition rate AO $Q$ -switched ${rm TEM}_{00}$ grazing incidence laser. Up to 2.1 MHz $Q$-switching with ${rm TEM}_{00}$ output of 8.6 W and 2.2 MHz $Q$ -switching with multimode output of 10 W were achieved by using an acousto-optics $Q$ -switched grazing-incidence laser with optimum grazing-incidence angle and cavity configuration. The crystal was 3 at.% neodymium doped Nd:YVO$_{4}$ slab. The pulse duration at 2 MHz repetition rate was about 31 ns. The instabilities of pulse energy at 2 MHz repetition rate were less than ${pm}6.7hbox{%}$ with ${rm TEM}_{00}$ operation and ${pm}3.3hbox{%}$ with multimode operation respectively. The modeling of high repetition rate $Q$-switched operation is presented based on the rate equation, and with the solution of the modeling, higher pump power, smaller section area of laser mode, and larger stimulated emission cross section of the gain medium are beneficial to the $Q$-switched operation with ultrahigh repetition rate, which is in consistent with the experimental results.      

A Programmable 25-MHz to 6-GHz $K/L$ Frequency Multiplier With Digital $K_{rm vco}$ Compensation

A programmable rational-$K/L$ frequency multiplier that can synthesize any frequency between 25 MHz and 6 GHz from an input clock ranging from 1 to 5.5 GHz is presented. The architecture employs a fractional-$N$ input clock divider followed by a fractional- $N$ PLL. In contrast to conventional architectures, this allows large $K$ and $L$ , whose maximum values are limited only by the word-length of digital $SigmaDelta$ modulators. Additionally, to alleviate large $K_{rm vco}$ variation and fractional spurs, which are inevitable in wide tuning range VCOs and fractional-$N$ synthesizers, new compensation techniques are implemented without involving additional circuitry. This is an ideal solution to support a programmable serializer/deserializer on a field-programmable gate array.      

A 0.13 $mu$ m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion Architecture

This paper presents a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS/EDGE applications which adopts a direct-conversion receiver, a direct-conversion transmitter and a fractional-N frequency synthesizer with a built-in DCXO. In the GSM mode, the transmitter delivers 4 dBm of output power with 1$^{circ}$ RMS phase error and the measured phase noise is ${-}$164.5 dBc/Hz at 20 MHz offset from a 914.8$~$MHz carrier. In the EDGE mode, the TX RMS EVM is 2.4% with a 0.5 $~$dB gain step for the overall 36 dB dynamic range. The RX NF and IIP3 are 2.7 dB/ ${-}$12 dBm for the low bands (850/900 MHz) and 3 dB/${-}$ 11 dBm for the high bands (1800/1900 MHz). This transceiver is implemented in 0.13 $mu$m CMOS technology and occupies 10.5 mm$^{2}$ . The device consumes 118 mA and 84 mA in TX and RX modes from 2.8 V, respectively and is housed in a 5$,times,$ 5 mm$^{2}$ 40-pin QFN package.      

An 11-Bit 8.6 GHz Direct Digital Synthesizer MMIC With 10-Bit Segmented Sine-Weighted DAC

This paper presents a low power, ultrahigh-speed and high resolution SiGe DDS MMIC with 11-bit phase and 10-bit amplitude resolutions. Using more than twenty thousand transistors, including an 11-bit pipeline accumulator, a 6-bit coarse sine-weighted DAC and eight 3-bit fine sine-weighted DACs, the core area of the DDS is 3$,times,$ 2.5 mm$^2$ . The maximum clock frequency was measured at 8.6 GHz with a 4.2958 GHz output. The DDS consumes 4.8 W of power using a single 3.3 V power supply. It achieves the best reported phase and amplitude resolutions, as well as a leading power efficiency figure-of-merit (FOM) of 81.1 $~$GHz$cdot$2$^{{rm SFDR}/6}$/W in the mm-wave DDS design. The measured spurious-free-dynamic-range (SFDR) is approximately 45 dBc with a 4.2958 GHz Nyquist output, and 50 dBc with a 4.2 MHz output in the Nyquist band at the maximum clock frequency of 8.6 GHz. Under a 7.2 GHz clock input, the worst-case Nyquist band SFDR and narrow band SFDR are measured as 33 dBc and 42 dBc respectively. The measured phase noise with an output frequency of 1.57 GHz is ${-}$ 118.55 dBc/Hz at a 10 kHz frequency offset with a 7.2 GHz clock input generated from an Agilent E8257D analog signal generator. All the measurements were taken with the chips bonded in a CLCC-52 package.      

A 16-bit 65-MS/s Pipeline ADC With 80-dBFS SNR Using Analog Auto-Calibration in SiGe SOI Complementary BiCMOS

A 16-bit 65-MS/s switched-capacitors pipeline analog-to-digital converter built in 0.45-$mu{hbox {m}}$ 25-GHz $f_{T}$ complementary silicon-on-insulator BiCMOS delivers 80.1-dBFS signal-to-noise ratio, 98-dBc spurious-free dynamic range (SFDR) with 3-Vpp input range at 2-MHz input frequency. The $5times 5.3 {hbox {mm}}^{2}$ die consumes 1.7 W from a dual $pm$ 2.7-V supply. A noniterative analog auto-calibration algorithm simultaneously compensates for both random mismatch in the capacitors of the first quantizer stages, and integral nonlinearity curvatures contributed by sample-and-hold (S/H) and voltage reference buffers, yielding SFDR optimizations up to 12 dB. The test chip performance validates the transient noise simulations run for the analog front-end and the clock jitter, corroborating the efficacy of the circuit techniques adopted to design S/H, clock and references.      

A 0.55 V 60 dB-DR Fourth-Order Analog Baseband Filter

A 0.55 V supply voltage fourth-order low-pass continuous-time filter is presented. The low-voltage operating point is achieved by an improved bias circuit that uses different opamp input and output common-mode voltages. The fourth-order filter architecture is composed by two Active- ${rm G}_{rm m}{-}{rm RC}$ biquadratic cells, which use a single opamp per-cell with a unity-gain-bandwidth comparable to the filter cut-off frequency. The $-$ 3 dB filter frequency is 12 MHz and this is higher than any other low-voltage continuous-time filter cut-off frequency. The $-$3 dB frequency can be adjusted by means of a digitally-controlled capacitance array. In a standard 0.13 $mu{rm m}$ CMOS technology with ${V}_{THN}approx 0.25 {rm V}$ and ${V}_{THP}approx 0.3 {rm V}$, the filter operates with a supply voltage as low as 0.55 V. The filter $({rm total} {rm area}=0.47 {rm mm}^{2})$ consumes 3.4 mW. A 8 dBm-in-band IIP3 and a 13.3 dBm-out-of-band IIP3 demonstrate the validity of the proposal.      

A Low Phase-Noise QVCO With Integrated Back-Gate Coupling and Source Resistive Degeneration Technique

A 0.18 $mu$ m CMOS quadrature voltage-controlled oscillator with an extremely-low phase noise is presented. The excellent phase noise performance is accomplished by integration of the back-gate quadrature phase coupling and source resistive degeneration techniques into a complementary oscillator topology. The measured phase noise is as low as ${-}133$ dBc/Hz at 1 MHz offset from 3.01 GHz. The output phase imbalance is less than 1$^{circ}$ . The output power is $-1.25{pm} 0.5$ dBm and harmonic suppression is greater than 30.8 dBc. The oscillator core consumes 5.38 mA from a 1.5 V power supply. This QVCO achieves the highest figure-of-merit of ${-}193.5$ dBc/Hz.      

A CMOS Low Noise, Chopper Stabilized Low-Dropout Regulator With Current-Mode Feedback Error Amplifier

Low $1/f$ noise, low-dropout (LDO) regulators are becoming critical for the supply regulation of deep-submicron analog baseband and RF system-on-chip designs. A low-noise, high accuracy LDO regulator (LN-LDO) utilizing a chopper stabilized error amplifier is presented. In order to achieve fast response during load transients, a current-mode feedback amplifier (CFA) is designed as a second stage driving the regulation FET. In order to reduce clock feed-through and $1/f$ noise accumulation at the chopping frequency, a first-order digital ${Sigma}{Delta}$ noise-shaper is used for chopping clock spectral spreading. With up to 1 MHz noise-shaped modulation clock, the LN-LDO achieves a noise spectral density of 32 ${hbox{nV}}/{surd}{hbox{Hz}}$ and a PSR of 38 dB at 100 kHz. The proposed LDO is shown to reduce the phase noise of an integrated 32 MHz temperature compensated crystal oscillator (TCXO) at 10 kHz offset by 15 dB. Due to reduced $1/f$ noise requirements, the error amplifier silicon area is reduced by 75%, and the overall regulator area is reduced by 50% with respect to an equivalent noise static regulator. The current-mode feedback second stage buffer reduces regulator settling time by 60% in comparison to an equivalent power consumption voltage mode buffer, achieving 0.6 $mu{hbox{s}}$ settling time for a 25-mA load step. The LN-LDO is designed and fabricated on a 0.25 $mu{hbox{m}}$ CMOS process with five layers of metal, occupying 0.88 ${hbox{mm}}^{2}$.      

Low-Power Programmable Pseudorandom Word Generator and Clock Multiplier Unit for High-Speed SerDes Applications

This paper presents the design of a low-power programmable pseudorandom word generator (PRWG) and a low-noise clock multiplier unit (CMU) for high-speed SerDes applications. The PRWG is capable of producing test patterns with sequence length of $2 ^{7} -1$, $2 ^{10} -1$, $2 ^{15} -1$, $2 ^{23} -1$, and $2 ^{31} -1~hbox{b}$ according to CCITT recommendations, and the random word is 16-bit wide. High-speed and low-power operations of the PRWG are achieved by parallel feedback techniques. The measured jitter of the CMU is only 3.56 ${hbox {ps}}_{rm rms}$, and the data jitter at the PRWG output is mainly determined by the CMU. Implemented in an 0.18-$mu{hbox {m}}$ CMOS process, the power dissipation for the PRWG is only 10.8 mW, and the CMU consumes about 87 mW from a 1.8-V supply. This PRWG can be used as a low-cost substitute for external parallel test pattern generators.      

Tunable Linear MOS Resistors Using Quasi-Floating-Gate Techniques

A family of tunable MOS resistors based on quasi-floating-gate (QFG) transistors biased in the triode region is analyzed in this paper. From the study results, a new device that outperforms previous implementations, is presented. By means of a capacitive divider, the ac component of the drain-to-source voltage scaled with a factor $alphaleq 1$ is added to the gate-to-source voltage leading to a cancellation of the nonlinear terms. The effect of $alpha$ on resistor linearity is analytically studied. Simulation results are also provided for different technologies. Finally, a complete transconductor has been built which preserves the linearity of the MOS resistor. Three versions of the transconductor have been fabricated for different values of $alpha$ ($alpha=$ 0, 0.5, and 1) in a 0.5 $mu{hbox {m}}$ CMOS technology with $pm$1.65-V supply voltage. Experimental results show (for $alpha=1$ ) a THD of $-$ 57 dB $({rm HD}2=-70 {hbox {dB}})$ at 1 MHz for 2-V peak-to-peak differential input signal with a nominal ac-transconductance of 200 $muhbox{A/V}$ and a power consumption of 3.2 mW.      

A Fully Integrated 0.13- $mu$m CMOS 40-Gb/s Serial Link Transceiver

A fully integrated 40-Gb/s transceiver fabricated in a 0.13-$mu$m CMOS technology is presented. The receiver operates at a 20-GHz clock performing half-rate clock and data recovery. Despite the low ${rm f}_{rm T}$ of 70 GHz, the input sampler achieves 10-mV sensitivity using pulsed latches and inductive-peaking techniques. In order to minimize the feedback latency in the bang-bang controlled CDR loop, the proportional control is directly applied to the VCO, bypassing the charge pump and the loop filter. In addition, the phase detection logic operates at 20 GHz, eliminating the need for the deserializers for the early/late timing signals. The four clock phases for the half-rate CDR are generated by a quadrature LC-VCO with microstrip resonators. A linear equalizer that tunes the resistive loading of an inductively-peaked CML buffer can improve the eye opening by 20% while operating at 39 Gb/s. The prototype transceiver occupies 3.4$, times ,$2.9 mm$^{2}$ with power dissipation of 3.6 W from a 1.45-V supply. With the equalizer on, the transmit jitter of the 39-Gb/s 2$^{15}-1$ PRBS data is 1.85 ${rm ps}_{rm rms}$ over a WB-PBGA package, an 8-mm PCB trace, an on-board 2.4-mm connector, and a 1 m-long 2.4-mm coaxial cable. The recovered divided-by-16 clock jitter is 1.77 ${rm ps}_{rm rms}$ and the measured BER of the transceiver is less than $10^{- 14}$ .      

A Low Jitter Programmable Clock Multiplier Based on a Pulse Injection-Locked Oscillator With a Highly-Digital Tuning Loop

This paper introduces a pulse injection-locked oscillator (PILO) that provides low jitter clock multiplication of a clean input reference clock. A mostly-digital feedback circuit provides continuous tuning of the oscillator such that its natural frequency is locked to the injected frequency. The proposed system is demonstrated with a prototype consisting of a custom 0.13 $mu$m integrated circuit with active area of 0.4 mm$^{2}$ and core power of 28.6 mW, along with an FPGA, a discrete DAC and a simple RC filter. Using a low jitter 50 MHz reference input, the PILO prototype generates a 3.2 GHz output with integrated phase noise, reference spur, and estimated deterministic jitter of 130 fs (rms), ${-}$ 63.9 dBc, and 200$~$ fs (peak-to-peak), respectively.      

A $Delta{-}Sigma$ PLL-Based Spread-Spectrum Clock Generator With a Ditherless Fractional Topology

A triangular-modulated spread-spectrum clock generator using a$Delta{-}Sigma$-modulated fractional-$N$ phase-locked loop (PLL) is presented. The PLL employs a multiphase divider to implement the modulated fractional counter with increased $Delta{-}Sigma$ operation speed. In addition, the phase mismatching error in the phase-interpolated PLL with multiphase clocks can be randomized, and finer frequency resolution is achievable. With a frequency modulation of 33 kHz, the measured peak power reduction is more than 11.4 dB under a deviation of $pm$0.37%. Without spread-spectrum clocking, the PLL generates 2.4-GHz output with 18.82-ps peak-to-peak jitter. After spread-spectrum operation, the measured up-spread and down-spread jitter can achieve 52.59 and 56.79 ps, respectively. The chip occupies $950times850 {rm mu}{rm m}^{2}$ in 0.18-${rm mu}{rm m}$ CMOS process and consumes 36 mW.      

A Biphase Modulator Circuit for Impulse Radio-UWB Applications

This letter presents a circuit to provide binary phase shift keying to ultra-wideband (UWB) impulse transmitters. The circuit is based on a Gilbert-cell multiplier and uses active on-chip balun and unbalanced-to-balanced converters for single-ended to single-ended operation. Detailed measurements of the circuit show a gain ripple of $pm 1~{rm dB}$ at an overall gain of $-2~{rm dB}$, an input reflection below $-12~{rm dB}$, an output reflection below $-18~{rm dB}$, a group delay variation below 6 ps and a $-1~{rm dB}$ input compression point of more than 1 dBm in both switching states over the full 3.1–10.6 GHz UWB frequency range. A time domain measurement verifies the switching operation using an FCC-compliant impulse generator. The circuit is fabricated in a $0.8~mu {rm m}$ Si/SiGe HBT technology, consumes 31.4 mA at a 3.2 V supply and has a size of $510 times 490~mu{rm m}^{2}$ , including pads. It can be used in UWB systems using pulse correlation reception or spectral spreading.      

An Infinite Phase Shift Delay-Locked Loop With Voltage-Controlled Sawtooth Delay Line

A wide-range delay-locked loop (DLL) with infinite phase shift and digital-controlled duty cycle is presented. By changing the polarity of the input clock of the voltage-controlled sawtooth delay, this proposed DLL achieves infinite phase shift by only a single loop. The proposed DLL has been fabricated in a 0.18$ mu$m CMOS process and the core area is $hbox{0.45}times {hbox{0.3 mm}}^{2}$. The measurement results show the proposed DLL operates from 50 to 500 MHz. The duty cycle of the output clock can be adjusted from 30% to 60% in the step of 5%. At 500 MHz, the measured rms jitter and peak-to-peak jitter is 1.43 and 11.1 ps, respectively. Its power consumption is 6 mW for a supply of 1.5 V.      

A Low-Voltage Mobility-Based Frequency Reference for Crystal-Less ULP Radios

The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for application in wireless sensor networks (WSN). After a single-point calibration, the spread of its output frequency is less than 1.1% (3$sigma $) over the temperature range from $-{hbox{22}},^{circ}{hbox{C}}$ to 85$,^{circ}{hbox{C}}$ . Fabricated in a baseline 65$~$nm CMOS technology, the frequency reference circuit occupies 0.11$ hbox{mm}^{2}$ and draws 34 $ muhbox{A}$ from a 1.2 V supply at room temperature.      

VLSI Design of Diminished-One Modulo $2^{n}+1$ Adder Using Circular Carry Selection

The diminished-one modulo $2^{n}+1$ addition is an important arithmetic operation for a high-performance residue number system. In this paper, we propose a new circular-carry-selection (CCS) technique for modulo $2^{n}+1$ addition in the diminished-one number domain. The architecture design of CCS modular adder is simple and regular for various bit-width inputs. For actual VLSI implementation, the proposed modular adder can demonstrate its superiority of savings up to 39.5% in AreaxTime and 46.3% in TimexPower performances over those of the previous existing solutions under 180-nm CMOS technology. Finally, the chip area and the clock rate of CCS diminished-one modulo $2^{16}+1$ adder are 26746 $mu{hbox{m}}^{2}$ and 476 MHz, respectively.      

A 67 dBm $OIP_{3}$ Multistacked Junction Varactor

A multistacked varactor is presented for ultra-linear tunable radio frequency applications. The varactor elements are applied in anti-series configuration and are characterized by an “exponential” $C$- $V _{R}$ relationship. Third-order intermodulation ($IM_{3}$) is cancelled through proper harmonic loading of the terminals of the anti-series configuration. Multiple stacking is used to further increase the power handling and to minimize the remaining fifth-order distortion. The measured output intercept point ($OIP_{3}$ ) at 2 GHz is $ > 67~{rm dBm}$ for modulated signals up to 10 MHz bandwidth, while providing a capacitance tuning ratio of 3:1 with an average quality factor of 40 and maximum control voltage of 10 V.      

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

Unstrained high-electron mobility transistors (HEMTs) were fabricated from InAlN/GaN on semi-insulating SiC substrates. The devices had 0.24-$muhbox{m}$ T-gates with a total width of $hbox{2} times hbox{150} muhbox{m}$. Final passivated performance values for these devices are $I_{max} = hbox{1279} hbox{mA/mm}$, $I_{rm DSS} = hbox{1182} hbox{mA/mm}$ , $R_{c} = hbox{0.43} Omega cdot hbox{mm}$, $rho_{s} = hbox{315} Omega/hbox{sq}$, $f_{T} = hbox{45} hbox{GHz}$, $f_{max({rm MAG})} = hbox{64} hbox{GHz}$, and $g_{m} = hbox{268} hbox{mS/mm}$. Continuous-wave power measurements at 10 GHz produced $P_{rm sat} = hbox{3.8} hbox{W/mm}$, $G_{t} = hbox{8.6} hbox{dB}$, and $hbox{PAE} = hbox{30}%$ at $V_{rm DS} = hbox{20} hbox{V}$ at 25% $I_{rm DSS}$ . To our knowledge, these are the first power measurements reported at 10 GHz for this material.