A linear,ultra wideband,low‐power, 2.1–5 GHz,VCO

A linear, Ultra Wideband, low‐power VCO, suitable for UWB‐FM applications is proposed, forming the main part of a UWB‐FM transmitter. The VCO is designed in TSMC 90thinspacenm digital CMOS process and includes a Source‐Coupled Multivibrator, used as current‐controlled oscillator (CCO) which generates output frequencies between 2.1 and 5 GHz and a voltage‐to‐current (V‐to‐I) converter which translates the VCO input voltage modulation signal to current. Two single‐ended inverter buffers are employed to drive either a differential or a single‐ended UWB antenna. The presented VCO is designed for 1 V power supply and exhibits a linear tuning range of 2.1–5 GHz, a differential output power of ?7.83 dBm±0.78 dB and low power consumption of 8.26 mW, including the output buffers, at the maximum oscillation frequency. It is optimized for a very high ratio of tuning range (81.69%) over power consumption equal to 9.95 dB. The desired frequency band of 3.1–5 GHz for UWB‐FM applications is covered for the entire industrial temperature range (?40 to 125^°C). Copyright © 2010 John Wiley & Sons, Ltd.     

A high output power and low phase noise GaN HEMT VCO with array of switchable inductors

This paper presents cross‐coupled voltage‐controlled oscillators (VCOs) involving array of switchable inductors (i.e., N  = 1 and N  = 2 switchable inductors) and implemented using gallium‐nitride high electron mobility transistors on Si substrate technology for worldwide interoperability for microwave access applications. Band selection and coarse frequency tuning were achieved using the array of switchable inductors, whereas fine tuning was controlled using varactors. Two bands were obtained using the one‐stage switchable inductor VCO operating in the ranges 3.41–3.57 GHz and 3.85–3.94 GHz. The VCO output power (P_out) was 21.8 dBm at 3.57 GHz from a 10‐V power supply. Four continuous bands were obtained using the two‐stage switchable inductors VCO operating in the range of 3.16–3.4, 3.25–3.64, 3.48–3.71 and 3.64–3.9 GHz, respectively. An additional band was generated by fine‐tuning the inductance through mutual coupling between the transmission line and one of the inductors. The proposed two‐stage switchable inductors VCO provided a 21% tuning range at frequencies ranging with a control voltage ranging from 12 to 20 V, a low phase noise of −123 dBc/Hz at a 1‐MHz offset from a 3.3‐GHz carrier and a P_out of 21 dBm at 3.5 GHz from a 10‐V power supply. Copyright © 2017 John Wiley & Sons, Ltd.     

A 0.6 V, 2.11 MHz, 62 dB SFDR active‐RC filter in 0.13µm CMOS process

Active‐RC biquad is proposed, which allows the DC level of the input of operational amplifier (op‐amp) to be different from that of the op‐amp output, enabling the low‐voltage operation. The proposed biquad realizes a second‐order transfer function with only one op‐amp, rendering even lower power consumption. By cascading two biquads, a 0.6 V fourth‐order filter is realized in a 0.13µm CMOS technology. While dissipating only 0.42 mW, the filter shows 2.11 MHz cut‐off frequency and 62 dB spurious‐free dynamic range. Copyright © 2008 John Wiley & Sons, Ltd.     

Analysis of flicker noise conversion to phase noise in CMOS differential LC oscillators

An analysis of the flicker noise conversion to close‐in phase noise in complementary metal‐oxide semiconductor (CMOS) differential inductance‐capacitance (LC)‐voltage controlled oscillator is presented. The contribution of different mechanisms responsible for flicker noise to phase noise conversion is investigated from a theoretical point of view. Impulse sensitivity function theory is exploited to quantify flicker noise to phase noise conversion process from both tail and core transistors. The impact of different parasitic capacitances inside the active core on flicker noise to phase noise conversion is investigated. Also, it is shown how different flicker noise models for core metal‐oxide semiconductor (MOS) transistors may result in different close‐in phase noise behaviors. Based on the developed analysis, design guidelines for reducing the close‐in phase noise are introduced. Copyright © 2015 John Wiley & Sons, Ltd.     

A 10 b 25 MS/s 4.8 mW 0.13 µm CMOS ADC with switched‐bias power‐reduction techniques

This paper proposes a 10 b 25 MS/s 4.8 mW 0.13 µm CMOS analog‐to‐digital converter (ADC) for high‐performance portable wireless communication systems, such as digital video broadcasting, digital audio broadcasting, and digital multimedia broadcasting (DMB) systems, simultaneously requiring a low‐voltage, low‐power, and small chip area. A two‐stage pipeline architecture optimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate, while switched‐bias power‐reduction techniques reduce the power consumption of the power‐hungry analog amplifiers. Low‐noise reference currents and voltages are implemented on chip with optional off‐chip voltage references for low‐power system‐on‐a‐chip applications. An optional down‐sampling clock signal selects a sampling rate of 25 or 10 MS/s depending on applications in order to further reduce the power dissipation. The prototype ADC fabricated in a 0.13 µm 1P8M CMOS technology demonstrates a measured peak differential non‐linearity and integral non‐linearity within 0.42 LSB and 0.91 LSB and shows a maximum signal‐to‐noise‐and‐distortion ratio and spurious‐free dynamic range of 56 and 65 dB at all sampling frequencies up to 25 MHz, respectively. The ADC with an active die area of 0.8 mm² consumes 4.8 and 2.4 mW at 25 and 10 MS/s, respectively, with a 1.2 V supply. Copyright © 2008 John Wiley & Sons, Ltd.     

Analysis and design of LC oscillators associated with frequency multipliers: a phase noise perspective

When a local oscillator signal generation system is based on an LC oscillator and a frequency multiplier, the question of determining the optimal multiplication factor is a key issue. In this paper, the problem is addressed in order to minimize the 1/f ² phase noise within a tuning range constraint. The analysis, with a practical graphical representation, reveals the oscillator phase noise dependence on the oscillating frequency in the transition from two different regimes, named the inductor‐limited quality factor and the capacitor‐limited quality factor. The results obtained enable the evaluation of the phase noise performance of systems based on a sub‐harmonic and super‐harmonic oscillators and how they compare with an oscillator in the fundamental mode. Crucial questions like the phase noise improvement that these systems can achieve are analytically answered. A design methodology is thus proposed and verified through measurements on a frequency source at 31 GHz, composed by a sub‐harmonic voltage‐controlled oscillator followed by an injection‐locked frequency tripler, dedicated to backhauling applications, designed on a BiCMOS process technology. The tuning range is 10%, and the phase noise at a 1‐MHz offset is −112 dBc/Hz. Copyright © 2017 John Wiley & Sons, Ltd.     

Phase error analysis in CMOS injection‐coupled LC quadrature oscillator (IC‐QO)

This paper presents a novel approach to study the phase error in source injection coupled quadrature oscillators (QOs). Like other LC QOs, the mismatches between LC tanks are the main source of phase error in this oscillator. The QO is analyzed where the phase error and oscillation frequency are derived in terms of circuit parameters. The proposed analysis shows that the output phase error is a function of injection current and the current of source equivalent capacitor. As a result, it is shown that increasing of tail current and LC tank quality factor decreases the phase error. Derived equations show that the phase error can be cancelled and even controlled by adjusting bias currents. To evaluate the proposed analysis and consequent designed QO, a 5.5 GHz CMOS QO is designed and simulated using the practical 0.18 µm TSMC CMOS technology. The experiments show good agreement between analytical equations and simulation results. Copyright © 2013 John Wiley & Sons, Ltd.     

Increasing power efficiency in the design of a low power and low phase noise CMOS LC oscillator

This study developed a local oscillator (LO) with low phase noise and low power consumption. The proposed oscillator core comprises a pair of cross‐coupled transistors, which are fed by another pair of transistors that injects current at moments close to the peak of output voltage. The position of the current injection transistors, which are inserted in series with the cross‐coupled transistors, affects the waveform of current injected into an inductive–capacitive (LC) tank. Installing a capacitor on the source node of the cross‐coupled transistors increases the current injected into the LC tank and thereby augments the output voltage amplitude and power efficiency of the LO. The resonator phase shift and Q can be corrected by adjusting the source capacitance, which filters noise. These changes reduce the phase noise to ?123.4 dBc/Hz at a frequency offset of 1 MHz and improve oscillator performance with a figure of merit equal to ?193.5 dBc/Hz. To evaluate the LC tank, a 5 GHz LO was simulated at 1.8 V power supply and 2.5 mW power consumption. The simulation was conducted using a practical 0.18 complementary metal–oxide–semiconductor model manufactured by the Taiwan Semiconductor Manufacturing Company. The simulation results confirmed the analytical findings.     

A simultaneously bidirectional inductively coupled link in a 0.13‐µm CMOS technology

A simultaneously bidirectional inductively coupled link has been developed to provide higher signaling bandwidth for a given inductively coupled channel. Two types of echo signals, that is, the resistive and inductive echo signals, are canceled without an inductive replica load to save silicon area. The resistive echo signal is canceled with a replica driver driving a resistive replica load, while the inductive echo signal is canceled by deliberately controlling the timing of a receiver comparator. The prototype implemented in a 0.13‐µm complementary metal–oxide–semiconductor (CMOS) technology occupies 0.019 mm² including an on‐chip channel inductor and shows 9.1‐pJ/b energy efficiency at 3.0‐Gbps signaling bandwidth, that is, 1.5 Gbps in each signaling direction. Copyright © 2016 John Wiley & Sons, Ltd.     

Survey of integrated‐circuit‐oscillator phase‐noise analysis

This tutorial distills the salient phase‐noise analysis concepts and key equations developed over the last 75 years relevant to integrated circuit oscillators. Oscillator phase and amplitude fluctuations have been studied since at least 1938 when Berstein solved the Fokker–Planck equations for the phase/amplitude distributions of a resonant oscillator. The principal contribution of this work is the organized, unified presentation of eclectic phase‐noise analysis techniques, facilitating their application to integrated circuit oscillator design. Furthermore, we demonstrate that all these methods boil down to obtaining three things: (1) noise modulation function; (2) noise transfer function; and (3) current‐controlled oscillator gain. For each method, this paper provides a short background explanation of the technique, a step‐by‐step procedure of how to apply the method to hand calculation/computer simulation, and a worked example to demonstrate how to analyze a practical oscillator circuit with that method. This survey article chiefly deals with phase‐noise analysis methods, so to restrict its scope, we limit our discussion to the following: (1) analyzing integrated circuit metal–oxide–semiconductor/bipolar junction transistor‐based LC, delay, and ring oscillator topologies; (2) considering a few oscillator harmonics in our analysis; (3) analyzing thermal/flicker intrinsic device‐noise sources rather than environmental/parametric noise/wander; (4) providing mainly qualitative amplitude‐noise discussions; and (5) omitting measurement methods/phase‐noise reduction techniques. Copyright © 2013 John Wiley & Sons, Ltd.     

A 0.8‐V supply bulk‐driven operational transconductance amplifier and Gm‐C filter in 0.18 µm CMOS process

A low voltage bulk‐driven operational transconductance amplifier (OTA) and its application to implement a tunable Gm‐C filter are presented. The linearity of the proposed OTA is achieved by nonlinear terms cancelation technique, using two paralleled differential topologies with opposite signs in the third‐order harmonic distortion term of the differential output current. The proposed OTA uses 0.8 V supply voltage and consumes 31.2 μW. The proposed OTA shows a total harmonic distortion of better than ?40 dB over the tuning range of the transconductance, by applying 800 mV_ppd sine wave input signal with 1 MHz frequency. The OTA has been used to implement a third‐order low‐pass Gm‐C filter, which can be used for wireless sensor network applications. The filter can operate as the channel select filter and variable gain amplifier, simultaneously. The gain of the filter can be tuned from ?1 to 23 dB, which results in power consumptions of 187.2 to 450.6 μW, respectively. The proposed OTA and filter have been simulated in a 0.18 µm CMOS technology. Simulations of process corners and temperature variations are also included in the paper. Copyright © 2014 John Wiley & Sons, Ltd.     

A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference

An all‐CMOS, low‐power, wide‐temperature‐range, curvature‐compensated voltage reference is presented. The proposed topology achieves a measured temperature coefficient of 12.9 ppm/°C for a wide temperature range of 180°C ( − 60 to 120°C) at a bias voltage of 0.7 V while consuming a mere 2.7 μW. The high‐order curvature compensation, which leads to a low‐temperature sensitivity of the reference voltage, is performed using a new, simple, but efficient methodology. The non‐linearities of an N‐type metal‐oxide‐semiconductor (NMOS) device operated in subthreshold are combined with the non‐linearities of two different kinds of polysilicon resistors, leading to the improved performance. The extended temperature range of this voltage reference gives it an important competitive advantage, especially at lower temperatures, where prior art designs' performance deteriorate abruptly. In addition, it utilizes an innovative trimming methodology whereby two trimmable resistors enable the tuning of both the overall slope and non‐linearities of the temperature sensitivity. The design was fabricated using TowerJazz Semiconductor's CMOS 0.18 μm technology, without using diodes or any external components such as compensating capacitors. It has an area of 0.023 mm² and is suitable for high‐performance power‐aware applications as well as applications operating in extreme temperatures. Copyright © 2016 John Wiley & Sons, Ltd.     

A series‐coupled LC quadrature oscillator using phase/amplitude calibration

In this paper, an analytic approach for the estimation of the phase and amplitude error in series coupled LC quadrature oscillator (SC‐QO) is proposed. The analysis results show that imbalances in source voltage of coupling transistor because of mismatches between LC tanks are the main source of the phase and amplitude error in this oscillator. For compensation of the phase and amplitude error, a phase and amplitude‐tunable series coupled quadrature oscillator is designed in this paper. A phase shift generation circuit, designed using an added coupling transistor, can control the coupling transistor source voltage. The phase and amplitude error can simply be controlled and removed by tuning the phase shifter, while this correction does not have undesirable impact on phase noise. In fact, the proposed SC‐QO generates a phase shift in the output current, which reduces the resonator phase shift (RPS) and improves phase noise. The phase and amplitude tunable SC‐QO is able to correct the phase error up to ±12°, while amplitude imbalances are reduced as well. To evaluate the proposed analysis, a 4.5‐GHz CMOS SC‐QO is simulated using the practical 0.18‐μm TSMC CMOS technology with a current consumption of 2 mA at 1.8‐V supply voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

A 14b 150 MS/s 140 mW 2.0 mm2 0.13µm CMOS A/D converter for software‐defined radio systems

This work proposes a 14 b 150 MS/s CMOS A/D converters (ADC) for software‐defined radio systems requiring simultaneously high‐resolution, low‐power, and small chip area at high speed. The proposed calibration‐free ADC employs a wide‐band low‐noise input sample‐and‐hold amplifier (SHA) along with a four‐stage pipelined architecture optimizing scaling‐down factors for the sampling capacitance and the input trans‐conductance of amplifiers in each stage to minimize thermal noise effect and power consumption. A signal‐insensitive 3‐D fully symmetric layout achieves a 14 b level resolution by reducing a capacitor mismatch of three MDACs. The prototype ADC in a 0.13µm 1P8M CMOS technology demonstrates a measured differential nonlinearity (DNL) and integral nonlinearity within 0.81LSB and 2.83LSB at 14 b, respectively. The ADC shows a maximum signal‐to‐noise‐and‐distortion ratio of 64 and 61 dB and a maximum spurious‐free dynamic range of 71 and 70 dB at 120 and 150 MS/s, respectively. The ADC with an active die area of 2.0mm² consumes 140 mW at 150 MS/s and 1.2 V. Copyright © 2010 John Wiley & Sons, Ltd.     

Mode dynamics in fourth‐order LC oscillators

We present a complete analysis of single and concurrent modes in fourth‐order LC‐voltage‐controlled oscillators ( VCOs), which are increasingly applied in dual‐band communication systems. We give a procedure based on the averaging method that simplifies the derivation of the abridged equations, which are derived without resorting to a change of co‐ordinates. The amplitudes of the oscillatory modes in steady state and in transient are found in explicit form. Conditions for the stability of the single and concurrent modes are derived, which apply to any active one‐port dual‐band LC‐VCO and allow one to predict the nonlinearities ensuring the occurrence of a stable concurrent mode. Numerical and experimental results show a good accuracy of the presented formulas. Copyright © 2016 John Wiley & Sons, Ltd.     

An 11‐μ W, 9‐bit fully differential,cyclic/algorithmic ADC in 0.13 μm CMOS

This paper describes a fully differential, cyclic, analogue‐to‐digital converter (ADC). It utilizes a 4‐bit binary weighted capacitor array to obtain 9‐bit resolution. The ADC uses an operational amplifier to suppress supply voltage variations. The operational amplifier with the slew‐rate detection is used to increase the speed of the ADC. The ADC is fabricated in IBM 0.13 μm CMOS process and occupies 650 × 850μm² active area. At 10 kS/s sampling rate, the ADC consumes 11 μW. In order to test immunity of the ADC on the supply voltage variations, static and dynamic performance of the ADC is measured with triangular supply voltage (V _{D C}  = 1.5 V, V _{A C}  = 200mV _pp, f  = 1 kHz). The measured peak of differential nonlinearity and integral nonlinearity is  + 0.26/ − 0.67 and  + 0.65/ − 0.59, respectively. At 250 Hz, effective number of bit is 8.4 bits, S F D R  = 66.7 dB and S N D R  = 52.6 dB. Copyright © 2016 John Wiley & Sons, Ltd.     

A fast automatic frequency calibration technique for a 2–6 GHz frequency synthesizer

A fast automatic frequency calibration (AFC) technique is described. For fast AFC operation while eliminating the uncertainty of the initial phase relationship between the reference clock and voltage‐controlled oscillator output, two‐phase reference clocks are employed. The proposed AFC scheme is applied to a 2–6 GHz frequency synthesizer. The frequency synthesizer is implemented in a 0.18 µm complementary metal–oxide–semiconductor process and occupies 0.92 mm² while the AFC occupies only 0.01 mm². The AFC operation is completed in less than 1.6 µs. Copyright © 2012 John Wiley & Sons, Ltd.     

A faster phase frequency detector using transmission gate–based latch for the reduced response time of the PLL

In this paper, we present a new design of phase frequency detector (PFD) without reset, such that the blind zone and dead zone issues in the phase locked loop are annihilated. The PFD is designed using transmission gate–based latches, which produce UP and DOWN pulses only when there is a distinct phase difference between the reference and divided frequencies. Thus, the continuous pulses that get produced by the conventional NAND gate–based latches are avoided, leading to reduced power consumption of the PFD. The charge pump makes use of an op‐amp used as a buffer, to reduce the current mismatch. The loop filter used is of second order, and the voltage‐controlled oscillator is of conventional current–starved type. The divider makes use of true single‐phase clock latches. It was found that the phase locked loop with new design of PFD, compared with the conventional design, consumes 27% lesser power, and the lock time is decreased by 79%. In addition, it was found that the control voltage swing is reduced by 71%, which leads to much lesser spur content at the output of the voltage‐controlled oscillator.     

A 5 GHz quadrature relaxation oscillator with mixing for improved testability or compact front‐end implementation

We demonstrate by measurements on a test circuit that a 5 GHz relaxation oscillator with accurate quadrature outputs and low phase‐noise can be obtained, and that these favorable properties can be preserved while the mixing function is performed by this oscillator. This is useful either to measure the quadrature error at a low frequency, or to implement a low‐intermediate frequency (IF) or zero‐IF (homodyne) radio frequency front‐end. Copyright © 2008 John Wiley & Sons, Ltd.