Detrapping Current Measurement System Driven by Triboelectric Nanogenerators for Mapping Electron Trap States in Dielectrics

Electron trap states characterization plays a vital role in mesoscale measurement. Previous destructive methods have been applicable only in qualitative comparison. Nonetheless, the imaging of trap states distribution in space and energy level remains challenging. Herein, a triboelectric nanogenerator driven detrapping current (TENGd-DTC) measurement system is reported. The triboelectric nanogenerator (TENG) is designed as a high voltage generator, with an output voltage of ≈3 kV for driving the dielectric barrier discharge (DBD). The discharge model with dynamic carriers’ evolution is proposed, thus the detrapping currents can be extracted from DBD currents, based on which energy levels and densities of trap states are quantitatively calculated. The chamber design parameters as the platform for TENGd-DTC measurement under DBD are optimized. With the optimized chamber, the energy level range within 0.6–0.8 eV can be clearly characterized, and the difference between results of the proposed and the current methods is less than 12%. More importantly, the improved measurement electrode array is applied for multi-point scanning, and imaging of trap parameters is demonstrated vividly at a spatial resolution of ≈50 μm. This work paves an effective and non-destructive imaging approach for trap states characterization, and potential applications in mesoscale modification of functional materials.     

一种先进高压纳秒脉冲功率合成器设计

提出了一种基于先进高压纳秒脉冲线路功率合成器设计全固态高重频高压纳秒脉冲源新方法,并用实验证实了该方法的有效性和可行性,实现了全固态、高重频、高压、纳秒脉冲源的高功率输出,满足了实际应用需求。解决了全固态高重频纳秒脉冲线路功率合成、多个高压纳秒脉冲源的高精度同步(小于50ps)、高稳定全固态高压纳秒脉冲源单源模块设计、系统设计的电磁兼容等关键技术问题。该高压纳秒脉冲线路功率合成器新方法将为高功率先进高性能小型全固态高重频高压纳秒脉冲源设计提供技术参考。     

介质阻挡激发冷等离子体的放电特性研究

介质阻挡放电是目前常压下最稳定、安全且成本最低的产生冷等离子体的方式。为了研究其放电特性,在分析了其等效模型的基础上,搭建了一台高频高压电源,采用同轴圆筒电极结构,实验研究了在不同电极长度以及不同输入电压情况下的输出电流、电压和放电剧烈程度等特性。实验结果表明：电极长度相同时,输入电压越大,输出电流越大,放电越剧烈;输入电压相同时,电极长度越长,放电剧烈程度几乎保持不变,输出电流越大。实验结果符合其等效模型分析。     

一种新型人体指纹提取方法

介绍了一种基于介质阻挡放电原理的新型人体指纹提取方法。讨论了这种方法的基本原理,分析了影响指纹提取质量的因素。在此基础上,提出了在大气中,采用高压纳秒放电技术是指纹提取质量的保证。文中给出了作者实拍的照片,表明用这种技术获得的指纹图像具有图像清晰、完整、对比度高的特点,可完全适用于指纹识别系统之中。     

新型介质阻挡放电平面光源高压窄脉冲逆变电源的设计与研究

为了提高介质阻挡放电型平面光源的放电效率,本文设计并给出了一种可用于介质阻挡型平面光源及基于介质阻挡原理的气体放电器件的高压窄脉冲产生电路.该逆变电路包含两个全桥逆变电路部分,通过控制两全桥逆变电路输出脉冲的相位差来实现高压窄脉冲的输出.设计并验证了基于12英寸介质阻挡放电平面光源的电路原型.实验结果表明,该逆变电路可以实现最小脉宽为800 ns,脉冲幅值为4.5 kV的高压窄脉冲;亮度及发光效率随工作频率的升高而升高;当输入功率为36.4W时,亮度可达3200 cd/m2,此时系统发光效率为13.4 lm/W.     

低气压介质阻挡放电击穿特性的研究

实验研究了在He、Ne、Ar中低气压低频介质阻挡放电的击穿特性.这种介质阻挡放电的电流波形是一系列脉冲,它是由外电场作用下的电子繁流和壁电荷电场对繁流的猝灭作用的结果.考虑了击穿过程中带电粒子的扩散损耗,实验研究和理论分析表明其击穿电压明显高于按Paschen定律计算所得结果,并分别依赖于气压和极间距离,而不是两者的乘积.离子诱导二次电子发射系数和击穿瞬间的电子平均能量也可用测量其不同极间距离的击穿特性来近似地确定,本文讨论了这种放电击穿特性的实验结果和理论分析.     

具有碳纳米管掺杂的场增强型DBD平面光源性能研究

为了降低介质阻挡放电平面光源(DBDL)器件的着火电压以及提高其发光效率,本文提出了一种掺杂型的具有场增强型结构的DBD平面光源,该结构采用碳纳米管(CNT)与荧光粉相混合,在荧光粉表明镀有一层厚度为40 nm的MgO薄膜以提高二次电子发射系数及降低气体放电中产生的离子对CNT的冲击.实验结果表明采用在荧光粉中掺杂CNT以及蒸镀MgO薄膜的DBD平面光源结构可以有效降低器件的着火电压和提高发光效率,同传统无掺杂的结构相比,在气压为50kPa的Ne-15％Xe混合气体时,掺杂比为1 ∶ 5000的DBD平面光源其着火电压降低了10％;在相同输入功率下,其亮度及发光效率提高了约20％.     

介质阻挡放电与脉冲电晕放电净化气态污染物的试验研究

利用自行研制的介质阻挡及脉冲电晕放电低温等离子体发生器对空气中氨、硫化氢、甲苯等5种气态污染物进行净化，并探讨了两种放电方式的原理和特点。试验结果表明：与介质阻挡放电相比，脉冲电晕放电具有更好的净化效果。     

Energy based closed form solution of ZCS multiresonantseries-parallel converters

Under-resonant operation of an ideal multi-resonant series-parallel power converter (MRSPC) with a capacitive output filter is modeled in this paper. This operation allows zero current switching (ZCS), which is convenient for bipolar devices. The capacitive output filtering reduces the recovery effect of the rectifier diodes and is suitable for high output voltage applications. A closed-form solution is found for this power converter, based on state space analysis using energy concepts. This approach simplifies the mathematical operations and gives better physical insight of the system variables. Based on the model, the steady-state characteristics of this power converter are derived by a simulation program, which are discussed and compared with the series resonant half-bridge power converter (SRHC). The optimum power converter parameters are found for given design requirements using computerized optimization routines. Several design examples are presented and compared with SRHC. The validity of the model is verified by SPICE simulations     

Simulink仿真指导放电准分子激光长脉宽的实验探究

针对医疗用308 nm准分子激光器长脉宽的实际需求,提出Simulink仿真模型指导延长激光脉宽的方案,并进行实验研究。首先建立并验证了典型准分子激光器放电激励回路仿真模型的有效性,其次基于脉冲形成网络原理建立4级LC峰化回路的放电激励模型,并进行了具体的激光器结构设计和参数选择。对一台储能电容为60 nF,工作电压范围在20~29 kV的308 nm准分子激光器进行实验,通过改变激励回路的结构和参数,激光脉宽由30 ns延长到60 ns,且当储能电容电压值为28 kV时,输出能量达407 mJ,激光脉冲能量的转移效率由典型结构的1.531%提高至1.73%,实现了放电激励308 nm准分子激光长脉冲输出条件下的高能量转移率,验证了Simulink仿真模型的有效性和指导意义,为实用化长脉宽准分子激光的设计和应用提供基础。     

介质阻挡放电平面光源的高频高压电源电路研究

研制了一种可用于驱动介质阻挡放电平面光源的电源电路,并对其工作过程进行了理论分析,同时对介质阻挡放电平面光源的亮度及发光效率的影响因素进行了实验研究。结果表明,电路的开关频率、输入电压和输出波形占空比对光源亮度和发光效率均有很大影响。     

Characterization Analysis of UDSM LVTSCR Under TLP Stress

The characteristics of a low-voltage triggering silicon-controlled rectifier (LVTSCR) under a transmission line pulse (TLP) and the characteristics of high frequency are analyzed. The research results show that the anode series resistance has a significant effect on the key points of the snapback curve. The device characteristics can fit the requirements of a electrostatic discharge (ESD) design window by adjusting the anode series resistance. Furthermore, the set-up time of the ESD has an influence on the turn-on voltage of the LVTSCR. A steep rising edge will cause the turn-on voltage to increase. The parasitic capacitance of the device for different voltage biases and frequencies determines the capacitive impedance, and its accuracy calculation is very important to the ESD design of high frequency circuits. Our research results provide a theoretical basis for the design of an ultra-deep sub-micron (UDSM) LVTSCR structure under ESD stress and the improvement of TLP test technology.     

High-voltage and high-frequency inverter controlled by DPLL for cold plasma applications

In this paper, the design and construction of a high-voltage high-frequency serial resonant bridge inverter endowed with a fast resonant frequency following capability, using the digital phase locked loop (DPLL) technique, is described. The main characteristics of this inverter are: high voltage (10?kV), high frequency (94.3?kHz), and low losses in the commutation devices. This inverter is used for the excitation of a dielectric barrier discharge cell (DBDC) for cold plasma generation. The system has been applied in hazardous organic compound degradation. In particular, benzene has been degraded to the order of 99.85%, according to measurements obtained by gas chromatography.     

用于高压H桥电路中栅驱动器的线性稳压器

设计了一种用于高压H桥电路中栅驱动器的线性稳压器,为H桥高端P-LDMOS提供了稳定的开启栅电压。采用频率补偿切换和自适应偏置电流技术,以保证稳压器在周期性突变的容性负载下的稳定性,并且具有快速的瞬态响应。典型应用的仿真结果表明,与未采用以上技术的原结构相比,新结构中P-LDMOS的开启时间缩短了47%,理论最高工作频率提高了1倍。     

A monolithic isolation amplifier in silicon-on-insulator CMOS: Testing and applications

In this paper, the design and test results of a 4-channel digital isolation amplifier are presented, along with results of a prototype power converter circuit using the amplifier for voltage feedback regulation. The amplifier uses a capacitive coupling technique to transfer digital signals from input to output while preserving galvanic isolation between the two. The isolation amplifier was fabricated in a 0.5 μm Silicon-on-Sapphire (SOS) technology and uses the isolation properties of the SOS substrate to achieve more than 800 V isolation between input and output grounds. Each of the four channels can operate in excess of 100 Mbps using a differential transmission scheme to reject ground bounce transients up to 1 V/μs. The input circuit can be powered from an on-chip charge-pump to permit single supply operation. The device can be used in a wide variety of applications that require passing signals across an isolation barrier: power supplies, remote sensing, and medical and industrial applications.     

A high voltage resonant inverter for dielectric discharge barrier cell plasma applications

Among the applications of dielectric barrier discharge cells (DBDCs), the generation of cold plasmas for the degradation of toxic organic compounds has received a great deal of attention in recent years. Normally, a DBDC can be energized by means of a high voltage power supply operating at line frequency. In this paper, the analysis, design and construction of a power resonant seriesinverter is presented; this inverter is aimed to operate at high-voltages/high-frequencies, and its suitability to excite a DBDC is investigated. The topological analysis of the inverter is carried out using the fundamental approximation technique, where the DBDC has been modelled as a capacitor whose terminals' voltage is provided by a pulse transformer. Both, the DBDC and the pulse transformer are represented in an RLC equivalent circuit. The resonant inverter is designed to operate in a region where the transfer function is load dependent. The series resonant inverter performance has been experimentally tested in a DBDC application, showing its effectiveness in the generation of the electron discharge by means of a charge/voltage figure of merit.     

High-voltage CdSe-Ge TFT driver circuits for passive AC-TFELdisplays

Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current drivers. It is shown that a 20-μm complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD. The realized column driver levels a 15 V CMOS signal up to a modulation voltage of 50 V. A novel tristate row driver circuit, which is based on the symmetric character of the thin-film transistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA. In this paper, the design, simulation, and measurement of these circuits are described. Technology problems due to high voltages were solved     

平面介质阻挡Xe放电荧光灯型LCD背光源的新进展

近年来随着大屏幕液晶显示器的快速发展，对背光源性能的要求也越来越高，使得各种新型背光源不断被开发出来。平面介质阻挡Xe放电荧光灯因其具有优越的光电特性，可望被用于台式电脑液晶显示器和液晶电视中。本文对具有代表性的几种新型平面介质阻挡Xe放电荧光灯进行了介绍，分析了进一步提高放电灯性能需要解决的问题。     

Manipulation of Disodium Rhodizonate: Factors for Fast‐Charge and Fast‐Discharge Sodium‐Ion Batteries with Long‐Term Cyclability

Organic sodium‐ion batteries (SIBs) are one of the most promising alternatives of current commercial inorganic lithium‐ion batteries (LIBs) especially in the foreseeable large‐scale flexible and wearable electronics. However, only a few reports are involving organic SIBs so far. To achieve fast‐charge and fast‐discharge performance and the long‐term cycling suitable for practical applications, is still challenging. Here, important factors for high performance SIBs especially with high capacity and long‐term cyclability under fast‐charge and fast‐discharge process are investigated. It is found that controlling the solubility through molecular design and determination of the electrochemical window is essential to eliminate dissolution of the electrode material, resulting in improved cyclability. The results show that poly(vinylidenedifluoride) will decompose during the charge/discharge process, indicating the significance of the binder for achieving high cyclability. Beside of these, it is also shown that decent charge transport and ionic diffusion are beneficial to the fast‐charge and fast‐discharge batteries. For instance, the flake morphology facilitates the ionic diffusion and thereby can lead to a capacitive effect that is favorable to fast charge and fast discharge.     

纳秒脉冲宽度对介质阻挡放电图像对比度的影响

采用4．7、7．6和10．6ns 3种不同宽度的高压脉冲,对硬币进行了介质阻挡放电照相（DBDP）。结果表明,介质阻挡放电图像的对比度明显与脉冲宽度有关,脉冲宽度越窄,图像的对比度越高;反之,脉冲宽度越宽,图像对比度越差。对DBDP的分析表明,外电压施加在硬币上后,与放电电流脉冲对应的时间滞后与放电间隙有关。采用放电时间滞后的观点,就纳秒脉冲宽度对介质阻挡放电图像对比度的影响进行了合理的解释。