一种晶闸管投切电容器的控制系统研究与应用

针对于当前晶闸管投切的电容器(TSC)在一些实际运用中的不足,提出了一种基于MPU板与脉冲分配板二级结构的TSC控制系统;重点介绍了TSC的控制系统,触发和PSASP软件对实际电力系统模型进行仿真;分析试验结果表明该控制系统具有良好的动态响应能力,满足实际应用要求.     

基于光电信号控制触发的四路高压脉冲源

给出了一种基于光电信号来作为四路高压脉冲源触发控制的设计原理和方法,采用光电信号作为前级控制触发脉冲,驱动后级高压半导体开关器件（IGBT）输出高压脉冲信号。设计了一台脉冲幅度为500 V~1 k V、脉冲宽度大于500 ns、脉冲前沿小于25 ns以及各通道之间输出的高压脉冲信号分散性小于10 ns的四路高压脉冲源。通过实验结果验证了所采用的设计原理及方法的可行性,给出了单次触发情况下四路高压脉冲输出的实验结果。     

MOC3061触发晶闸管过零调功

ＭＯＣ３０６１触发晶闸管过零调功陈明辉，吴一平在许多电加热的温度控制系统中，经常采用晶闸管过零触发调功方式控温。这种触发方式的优点是：晶闸管输出为正弦波，波形无畸变、电磁干扰少、无噪音等。但常见的晶闸管过零触发装置由同步电路（对三相电源）、检零电路、...     

激光触发GaAs光电导开关非线性现象的实验研究

实验研究了光电导开关的非线性现象,结果表明用半导体激光脉冲串触发光电导开关,在保持激光触发GaAs光电导开关实验条件不变的情况下,产生非线性的电阚值会不断降低.测量和比较试验前后光电导开关暗电阻,初步表明产生非线性的电阈值降低,是光电导开关因光照和产生非线性引起内部材料物理机制发生变化所致.     

低压无功补偿电容投切装置的设计

在电力系统中装设静止无功补偿装置(SVC)是控制无功功率、保证电压质量的有效手段,他根据无功功率的需求,对无功器件(电容器和电抗器)进行投切或调节。晶闸管投切电容器(TSC)是静止无功补偿技术的发展方向,这种装置的关键问题是如何对作为电容器投切开关的晶闸管进行控制。针对TSC低压无功补偿装置的结构,对晶闸管的触发电路进行详细的设计和分析,仿真结果证明了设计的正确性。     

用于线圈发射器的三电极间隙开关系统

电磁线圈发射器工作需要能承受很高工作电压和很大工作电流的闭合开关,这些开关目前主要有半导体开关和间隙类开关。其中间隙类开关具有电感低、耐压高、寿命长、可靠性高等特点而被广泛使用。在理论分析的基础上设计了一套用于线圈发射器的三电极间隙开关系统,它包括光控部分、触发系统、开关器件3部分。光控信号控制触发系统产生陡化的脉冲高电压,脉冲高压接入三电极的触发极控制主电极导通。控制信号与触发部分采用光纤连接,隔离了高压对低压的干扰。控制电路用金属罩屏蔽,能够有效地在复杂电磁环境下运行。试验检验得到开关性能：延迟时间为1．2μs,抖动时间约300ns。开关系统满足了电磁线圈发射的需要。     

高压TSC无功补偿装置研究

本文针对现有无功补偿技术提出了一些新的控制方法,并设计了一套高压TSC无功补偿装拦。该装挝以TMS320F2812为控制器芯片,以电力系统的无功功率作为主要控制目标,引入电容投切反馈机制获得电容实际投切状态,并对电容采取扫描的工作方式以保证等容电容循环投切。针对高压主电路,采用多路输出高压隔离电流源作为晶闸管触发电路,隔离强度好,同步触发性高。     

MOC3061系列光电双向可控硅驱动器

ＭＯＣ３０６１系列光电双向可控硅驱动器是一种新型的不电耦合器件，它可用直流低电压，小电流来控制交流高电压，大电流。用该器件触发晶闸管，具有结构简单，成本低，触发可靠等优点。     

小型机载光电平台电磁屏蔽设计

复杂的战场电磁环境严重影响了机载光电平台的安全性、可靠性和技术指标。为了提高小型机载光电平台的战场工作效能,从屏蔽的角度出发,对其进行了电磁兼容性设计。首先阐述了电磁屏蔽的屏蔽效能,并分别从屏蔽材料的选择、ABS外壳屏蔽、缝隙处屏蔽及敏感单元双层屏蔽等方面对小型机载光电平台进行了电磁屏蔽设计。通过电磁兼容性试验对屏蔽效果进行了验证。试验结果表明,采取合理的屏蔽措施后,小型机载光电平台的视频图像显示正常;传导发射值降低了约20 dBV;电场辐射发射值降低了约10 dBV/m;并且其余各项试验均得到了不同程度的改善。为机载光电平台电磁兼容性设计提供了参考。     

泵控软起动

本文介绍一种针对水泵电机的软起停方式,它以传统晶闸管软起动的主电路结构为基础,通过转矩闭环控制来调节触发角度,按照水泵系统的特性曲线来控制电机的电磁转矩,使控制电机起停的电磁转矩与泵系统特性曲线相匹配,使水泵能够平稳起停,避免“水锤”现象的发生。     

Novel gate and substrate triggering techniques for deep sub-micron ESD protection devices

As technology feature size is reduced, ESD becomes the dominant failure mode due to lower gate oxide breakdown voltage. In this paper, the effectiveness of new gate and substrate triggering techniques has been investigated to lower the trigger voltage of the LVTSCR and MOSFET based ESD protection circuits using 2D simulations and HBM/TLP measurements. The simulation results show that the using these techniques reduces the ESD triggering voltage by 63 and 44% for MOSFET-based and LVTSCR-based ESD structures, respectively, under 2 kV HBM ESD stress. The effectiveness of proposed gate and substrate triggering techniques is also confirmed by the HBM and TLP measurements.     

低能激光束触发BRV型软X射线源试验

采用低能的短脉冲激光束聚焦到高压阴极上触发BRV型真空火花软X线源。本文与传统的三电极滑动电火花触发装置作了比较，通过实验研究探讨了该触发方式所具有的实用性和优势。     

Optimum design of thyristor gate—Emitter geometry

This paper describes a new method of studying the influence of the gate-emitter geometrical configuration of thyristors upon their triggering performances. This method allows, for devices of any geometrical complexity, to calculate the emitter bias voltage distribution prior to turn-on and hence to compare the behavior of these devices from a geometrical point of view. The results may be used as guide lines for the optimum design of gate-emitter configurations. As examples, precise design rules are given for standard thyristors and application to amplifying interdigited gate thyristors are outlined.     

Ga阶梯分布改善快速晶闸管耐压特性

利用开管扩Ｇａ系统，分段控制掺杂量，使杂质Ｇａ在硅中形成阶梯形分布，用于快速晶曾管的研制，理论分析与测试结果表明，器件阻断耐压值比原高分布提高２００Ｖ左右，且通态特性和动态特性保持优良。实验证明，Ｇａ的阶梯分布是的晶闸管后条新途径。     

Breakover phenomena in field-controlled thyristors

The occurrence of breakover in the forward-blocking anode current-voltage characteristics of field-controlled thyristors is analyzed. It is demonstrated that this breakover occurs due to gate current flow which causes a debiasing of the gate potential in the presence of any series gate resistance. Based upon this mechanism, analytical expressions have been derived which describe the anode current-voltage breakover characteristics. These theoretical expressions have been found to be in very good agreement with the measured data obtained from asymmetrical field-controlled thyristors fabricated with various device thicknesses. From the analysis presented in this paper, it can be concluded that the occurrence of breakover in the forward-blocking characteristics of field-controlled thyristors can be minimized by ensuring low series gate resistances which biasing the devices and by using gate bias voltages well in excess of the minimum value required to block any desired anode voltage.     

Influence of the control mode on overlapping commutation of thyristors in a series inverter†

The paper describes the effects of changes in the triggering frequency on the maximum working frequency of a series inverter. Inverters differ in the type of load and in the mutual coupling existing between two commutation inductors in the circuit. It has been shown that the transient state is a result of changes in thyristor commutation from natural or critical to overlapping, and is dependent on the mode of change of the triggering frequency. The region of overlapping commutation has been determined by using two types of frequency change: fast (by keying modulation) and slow (by frequency modulation). The results show that slow changes in thyristor commutation permit a higher maximum working frequency than do fast changes. The region of overlapping commutation of thyristors is defined by new limit curves. The results may, for example, be applied in the design of an ultrasonic generator operating with frequency modulation.     

Temperature dependence of field-controlled thyristor characteristics

The dependence of the characteristics of field-controlled thyristors upon the ambient temperature has been examined in the range of -30 to 200°C. Unlike conventional thyristors, these devices have been found to continue to exhibit forward blocking capability up to the highest measurement temperature (200°C). In fact, it is shown here that the forward blocking capability as well as the blocking gain improve with increasing temperature with the usual scaling of the leakage current for power devices. The reverse blocking capability is also retained. The forward voltage drop of the device in the conducting state decreases with increasing temperature. This behavior is shown to be similar to that of conventional rectifiers and thyristors operated at high injection levels. Further, the force gate turn-off time of the devices has been found to increase with increasing temperature. This has been correlated with a measured increase in the minority-carrier lifetime. The results of this study demonstrate that field-controlled thyristors are capable of being operated at higher temperatures than conventional thyristors.     

A measurement technique and algorithm for determining the n-p-n and p-n-p alphas of a thyristor

A new method has been developed for accurately measuring the forward-blocking characteristics of gate-turnoff (GTO) thyristors, and for converting these characteristics into plots of n-p-n and p-n-p gain as a function of anode current and anode voltage. Specifically, anode current and gate current are measured as functions of gate-to-cathode voltage at a fixed anode voltage over several orders of magni, tude of anode current. These data are used to determine the electron and hole components of anode current, which are, in turn, used to calculate αnpnand αpnpover the entire range of anode current of interest. Examples are given that show how junction shorts, low minority-carrier lifetime in the n-base, and anomalously low n-p-n gain are diagnosed in GTO thyristors. These new procedures have successfully diagnosed the causes of gate insensitivity in 95 percent of the devices to which they have been applied.     

一种新颖的晶闸管串联均压的检验方法

为了改善由串联不均压引起的晶闸管失效问题,从晶闸管的选配和测试原理出发,详细分析了通态电流和器件温度等因素对串联选配的影响.提出了一种新颖的晶闸管串联均压的检验方法,并搭建了一个可以在一个周期中实现双电流测试,且温度可控的实验平台.该平台还具有人机互动功能,可以快速实现数据的采集和分析,方便了测试人员的操作,并大大提高了工作效率.经过现场满功率和未开满功率运行测试,均压系数与实验平台测试结果相似,验证了该方法的可靠性.该检验方法已应用于晶闸管中频电源选配中.     

The importance of the n-base in p-n-p-n-like structures subjectedto dV/dt ramps

A simple yet thorough analysis of physical effects induced in p-n-p-n-like silicon structures by the high rate of the OFF-state forward anode voltage rise (dV/dt) is discussed. The importance of n-base parameters in shaping the faulty triggering of thyristors subjected to dV/dt ramps is clearly demonstrated. The main implications of the findings for thyristor physics and design are also outlined