Highly Efficient Green Zn?Ag?In?S/Zn?In?S/ZnS QDs by a Strong Exothermic Reaction for Down‐Converted Green and Tripackage White LEDs

Highly efficient bright green‐emitting Zn? Ag? In? S (ZAIS)/Zn? In? S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn? Cu? In? S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W^?1 and excellent color qualities (color rendering index (CRI, R _a) = 95 and the special CRI for red (R ₉) = 93) at 2700 K.     

High‐Efficient Deep‐Blue Light‐Emitting Diodes by Using High Quality ZnxCd1‐xS/ZnS Core/Shell Quantum Dots

High‐quality violet‐blue emitting Zn_xCd_1‐xS/ZnS core/shell quantum dots (QDs) are synthesized by a new method, called “nucleation at low temperature/shell growth at high temperature”. The resulting nearly monodisperse Zn_xCd_1‐xS/ZnS core/shell QDs have high PL quantum yield (near to 100%), high color purity (FWHM) <25 nm), good color tunability in the violet‐blue optical window from 400 to 470 nm, and good chemical/photochemical stability. More importantly, the new well‐established protocols are easy to apply to large‐scale synthesis; around 37 g Zn_xCd_1‐xS/ZnS core/shell QDs can be easily synthesized in one batch reaction. Highly efficient deep‐blue quantum dot‐based light‐emitting diodes (QD‐LEDs) are demonstrated by employing the Zn_xCd_1‐xS/ZnS core/shell QDs as emitters. The bright and efficient QD‐LEDs show a maximum luminance up to 4100 cd m^?2, and peak external quantum efficiency (EQE) of 3.8%, corresponding to 1.13 cd A^?1 in luminous efficiency. Such high value of the peak EQE can be comparable with OLED technology. These results signify a remarkable progress, not only in the synthesis of high‐quality QDs but also in QD‐LEDs that offer a practicle platform for the realization of QD‐based violet‐blue display and lighting.     

Saturated and Multi‐Colored Electroluminescence from Quantum Dots Based Light Emitting Electrochemical Cells

Novel light emitting electrochemical cells (LECs) are fabricated using CdSe‐CdS (core‐shell) quantum dots (QDs) of tuned size and emission blended with polyvinylcarbazole (PVK) and the ionic liquid 1‐butyl‐3‐methylimidazolium hexafluorophosphate (BMIM‐PF₆). The performances of cells constructed using sequential device layers of indium tin oxide (ITO), poly(3,4‐ethylenedioxythiophene)‐poly(styrenesulfonate) (PEDOT:PSS), the QD/PVK/IL active layer, and Al are evaluated. Only color saturated electroluminescence from the QDs is observed, without any other emissions from the polymer host or the electrolyte. Blue, green, and red QD‐LECs are prepared. The maximum brightness (≈1000 cd m^‐2) and current efficiency (1.9 cd A^‐1) are comparable to polymer LECs and multilayer QD‐LEDs. White‐light QD‐LECs with Commission Internationale d'Eclairage (CIE) coordinates (0.33, 0.33) are prepared by tuning the mass ratio of R:G:B QDs in the active layer and voltage applied. Transparent QD‐LECs fabricated using transparent silver nanowire (AgNW) composites as the cathode yield an average transmittance greater than 88% over the visible range. Flexible devices are demonstrated by replacing the glass substrates with polyethylene terephthalate (PET).     

Efficient Near‐Infrared Light‐Emitting Diodes based on In(Zn)As–In(Zn)P–GaP–ZnS Quantum Dots

Near‐infrared (NIR) lighting plays an increasingly important role in new facial recognition technologies and eye‐tracking devices, where covert and nonvisible illumination is needed. In particular, mobile or wearable gadgets that employ these technologies require electronic lighting components with ultrathin and flexible form factors that are currently unfulfilled by conventional GaAs‐based diodes. Colloidal quantum dots (QDs) and emerging perovskite light‐emitting diodes (LEDs) may fill this gap, but generally employ restricted heavy metals such as cadmium or lead. Here, a new NIR‐emitting diode based on heavy‐metal‐free In(Zn)As–In(Zn)P–GaP–ZnS quantum dots is reported. The quantum dots are prepared with a giant shell structure, enabled by a continuous injection synthesis approach, and display intense photoluminescence at 850 nm with a high quantum efficiency of 75%. A postsynthetic ligand exchange to a shorter‐chain 1‐mercapto‐6‐hexanol (MCH) affords the QDs with processability in polar solvents as well as an enhanced charge‐transport performance in electronic devices. Using solution‐processing methods, an ITO/ZnO/PEIE/QD/Poly‐TPD/MoO₃/Al electroluminescent device is fabricated and a high external quantum efficiency of 4.6% and a maximum radiance of 8.2 W sr^?1 m^?2 are achieved. This represents a significant leap in performance for NIR devices employing a colloidal III–V semiconductor QD system, and may find significant applications in emerging consumer electronic products.     

Highly Efficient Quantum Dot Light‐Emitting Diodes by Inserting Multiple Poly(methyl methacrylate) as Electron‐Blocking Layers

This work presents a new device architecture integrating multiple poly(methyl methacrylate) (PMMA) electron‐blocking layers (EBL) in quantum dot light‐emitting diodes (QD‐LEDs). The device utilizes red‐emitting CdSe/ZnS QD with a novel structure where multiple PMMA EBLs are sandwiched between a pair of QD layers. A systematic optimization of QD‐LED structures has shown that a device including two PMMA and three QD layers performs the best, achieving a current efficiency of 17.8 cd A^?1 and a luminance of 194 038 cd m^?2. Numerical simulation of a simplified model of the proposed QD‐LED structure verifies that the structure consisting of two PMMA and three QD layers provides significant improvement in electroluminescent intensity. The simulation provides further insight into the origin of the effect of the PMMA EBL by showing that the addition of PMMA EBL reduces the electron leakage from the active QD region and enhances electron confinement, leading to an increased electron concentration in the QD active layers and a higher radiative recombination rate. The experimental and theoretical studies presented in this work demonstrate that multiple layers of PMMA can act as efficient EBLs in the fabrication of QD‐LEDs of improved performance.     

Green InP/ZnSeS/ZnS Core Multi-Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

InP quantum dots (QDs) are emerging as promising materials for replacing cadmium-based QDs in view of their heavy metal-free and tunable luminescence. However, the development of InP QD materials still lags due to the expensive and flammable phosphorus precursors, and also the unsatisfactory repeatability caused by the fast nucleation rate. Adopting lowly reactive P precursor aminophosphine can overcome this issue, but their low photoluminescence quantum yield (PLQY) and widening line widths do not apply to the practical application. Through engineering, the core-shell structure of QD, significantly promoted green emissions of QDs were obtained with PLQY of 95% and full width and half maximum (FWHM) of 45 nm, which demonstrated the highest PLQY record obtained from the aminophosphine system. Moreover, due to the residue halogen atoms on the QD surface as inorganic ligands to prevent further oxidization, these InP QDs demonstrated the ultra-long operational lifetime (over 1000 h) for QDs based color enhancement film. By optimizing the device structure, an inverted green InP quantum dot light-emitting diode (QLED) with external quantum efficiency (EQE) of 7.06% was also demonstrated, which showed a significant promise of these InP QDs in highly effective optoelectronic devices.     

Solvent‐Polarity‐Engineered Controllable Synthesis of Highly Fluorescent Cesium Lead Halide Perovskite Quantum Dots and Their Use in White Light‐Emitting Diodes

Cesium lead halide quantum dots (QDs) have tunable photoluminescence that is capable of covering the entire visible spectrum and have high quantum yields, which make them a new fluorescent materials for various applications. Here, the synthesis of CsPbX₃ (X = Cl, Br, I, or mixed Cl/Br and Br/I) QDs by direct ion reactions in ether solvents is reported, and for the first time the synergetic effects of solvent polarity and reaction temperature on the nucleation and growth of QDs are demonstrated. The use of solvent with a low polarity enables controlled growth of QDs, which facilitates the synthesis of high‐quality CsPbX₃ QDs with broadly tunable luminescence, narrow emission width, and high quantum yield. A QD white LED (WLED) is demonstrated by coating the highly fluorescent green‐emissive CsPbBr₃ QDs together with red phosphors on a blue InGaN chip, which presents excellent warm white light emission with a high rendering index of 93.2 and color temperature of 5447 K, suggesting the potential applications of highly fluorescent cesium lead halide perovskite QDs as an alternative color converter in the fabrication of WLEDs.     

Remote Biosensing with Polychromatic Optical Waveguide Using Blue Light‐Emitting Organic Nanowires Hybridized with Quantum Dots

Nanometer‐scale optical waveguides are attractive due to their potential applicability in photonic integration, optoelectronic communication, and optical sensors. Nanoscale white light‐emitting and/or polychromatic optical waveguides are desired for miniature white‐light generators in microphotonic circuits. Here, polychromatic (i.e., blue, green, and red) optical waveguiding characteristics are presented using a novel hybrid composite of highly crystalline blue light‐emitting organic nanowires (NWs) combined with blue, green, and red CdSe/ZnS quantum dots (QDs). Near white‐color waveguiding is achieved for organic NWs hybridized with green and red QDs. Light, emitted from QDs, can be transferred to the organic NW and then optically waveguided through highly packed π‐conjugated organic molecules in the NW with different decay characteristics. Remote biosensing using dye‐attached biomaterials is presented by adapting the transportation of QD‐emitted light through the organic NW.     

All‐Inorganic Bismuth‐Based Perovskite Quantum Dots with Bright Blue Photoluminescence and Excellent Stability

Lead halide perovskite quantum dots (QDs) possess color‐tunable and narrow‐band emissions and are very promising for lighting and display applications, but they suffer from lead toxicity and instability. Although lead‐free Bi‐based and Sn‐based perovskite QDs (CsSnX₃, Cs₂SnX₆, and (CH₃NH₃)₃Bi₂X₉) are reported, they all show low photoluminescence quantum yield (PLQY) and poor stability. Here, the synthesis of Cs₃Bi₂Br₉ perovskite QDs with high PLQY and excellent stability is reported. Via a green and facile process using ethanol as the antisolvent, as‐synthesized Cs₃Bi₂Br₉ QDs show a blue emission at 410 nm with a PLQY up to 19.4%. The whole series of Cs₃Bi₂X₉ (X = Cl, Br, and I) QDs by mixing precursors can cover the photoluminescence emission range from 393 to 545 nm. Furthermore, Cs₃Bi₂Br₉ QDs show excellent photostability and moisture stability due to the all‐inorganic nature and the surface passivation by BiOBr, which enables the one‐pot synthesis of Cs₃Bi₂Br₉ QD/silica composite. A lead‐free perovskite white light‐emitting diode is fabricated by simply combining the composite of Cs₃Bi₂Br₉ QD/silica with Y₃Al₅O₁₂ phosphor. As a new member of lead‐free perovskite QDs, Cs₃Bi₂Br₉ QDs open up a new route for the fabrication of optoelectronic devices due to their excellent stability and photophysical characteristics.     

Transparent InP Quantum Dot Light‐Emitting Diodes with ZrO2 Electron Transport Layer and Indium Zinc Oxide Top Electrode

Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO₂ nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m^?2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.     

Photoluminescence Tuning in Stretchable PDMS Film Grafted Doped Core/Multishell Quantum Dots for Anticounterfeiting

The development of new luminescent materials for anticounterfeiting is of great importance, owing to their unique physical, chemical, and optical properties. The authors report the use of color‐tunable colloidal CdS/ZnS/ZnS:Mn²⁺/ZnS core/multishell quantum dots (QDs)‐functionalized luminescent polydimethylsiloxane film (LPF) for anticounterfeiting applications. Both luminescent QDs and as‐fabricated, stretchable, and transparent LPF show blue and orange emission simultaneously, which are ascribed to CdS band‐edge emission and the ⁴T₁ → ⁶A₁ transition of Mn²⁺, respectively; their emission intensity ratios are dependent on the power‐density of a single‐wavelength excitation source. Additionally, photoluminescence tuning of CdS/ZnS/ZnS:Mn²⁺/ZnS QDs in hexane or embedded in LPF can also be realized under fixed excitation power due to a resonance energy transfer effect. Tunable photoluminescence of these flexible LPF grafted doped core/shell QDs can be finely controlled and easily realized, depending on outer excitation power and intrinsic QD concentration, which is intriguing and inspires the fabrication of many novel applications.     

Organometal Halide Perovskite Quantum Dot Light‐Emitting Diodes

Organometal halide perovskites quantum dots (OHP‐QDs) with bright, color‐tunable, and narrow‐band photoluminescence have significant advantages in display, lighting, and laser applications. Due to sparse concentrations and difficulties in the enrichment of OHP‐QDs, production of large‐area uniform films of OHP‐QDs is a challenging task, which largely impedes their use in electroluminescence devices. Here, a simple dip‐coating method has been reported to effectively fabricate large‐area uniform films of OHP‐QDs. Using this technique, multicolor OHP‐QDs light‐emitting diodes (OQ‐LEDs) emitting in blue, blue‐green, green, orange, and red color have been successfully produced by simply tuning the halide composition or size of QDs. The blue, green, and red OQ‐LEDs exhibited, respectively, a maximum luminance of 2673, 2398, and 986 cd m^?2 at a current efficiency of 4.01, 3.72, and 1.52 cd A^?1, and an external quantum efficiency of 1.38%, 1.06%, and 0.53%, which are much better than most LEDs based on OHP films. The packaged OQ‐LEDs show long‐term stability in air (humidity ≈50%) for at least 7 d. The results demonstrate the great potential of the dip‐coating method to fabricate large‐area uniform films for various QDs. The high‐efficiency OQ‐LEDs also demonstrate the promising potential of OHP‐QDs for low‐cost display, lighting, and optical communication applications.     

Origins of Low Quantum Efficiencies in Quantum Dot LEDs

The promise for next generation light‐emitting device (LED) technologies is a major driver for research on nanocrystal quantum dots (QDs). The low efficiencies of current QD‐LEDs are often attributed to luminescence quenching of charged QDs through Auger‐processes. Although new QD chemistries successfully suppress Auger recombination, high performance QD‐LEDs with these materials have yet to be demonstrated. Here, QD‐LED performance is shown to be significantly limited by the electric field. Experimental field‐dependent photoluminescence decay studies and tight‐binding simulations are used to show that independent of charging, the electric field can strongly quench the luminescence of QD solids by reducing the electron and hole wavefunction overlap, thereby lowering the radiative recombination rate. Quantifying this effect for a series of CdSe/CdS QD solids reveals a strong dependence on the QD band structure, which enables the outline of clear design strategies for QD materials and device architectures to improve QD‐LED performance.     

Core/Shell Perovskite Nanocrystals: Synthesis of Highly Efficient and Environmentally Stable FAPbBr3/CsPbBr3 for LED Applications

Lead halide perovskite nanocrystals (PeNCs) are promising materials for applications in optoelectronics. However, their environmental instability remains to be addressed to enable their advancement into industry. Here the development of a novel synthesis method is reported for monodispersed PeNCs coated with all inorganic shell of cesium lead bromide (CsPbBr₃) grown epitaxially on the surface of formamidinium lead bromide (FAPbBr₃) NCs. The formed FAPbBr₃/CsPbBr₃ NCs have photoluminescence in the visible range 460–560 nm with narrow emission linewidth (20 nm) and high optical quantum yield, photoluminescence quantum yield (PLQY) up to 93%. The core/shell perovskites have enhanced optical stability under ambient conditions (70 d) and under ultraviolet radiation (50 h). The enhanced properties are attributed to overgrowth of FAPbBr₃ with all‐inorganic CsPbBr₃ shell, which acts as a protective layer and enables effective passivation of the surface defects. The use of these green‐emitting core/shell FAPbBr₃/CsPbBr₃ NCs is demonstrated in light‐emitting diodes (LEDs) and significant enhancement of their performance is achieved compared to core only FAPbBr₃‐LEDs. The maximum current efficiency observed in core/shell NC LED is 19.75 cd A^‐1 and the external quantum efficiency of 8.1%, which are approximately four times and approximately eight times higher, respectively, compared to core‐only devices.     

Highly Efficient Quantum‐Dot‐Sensitized Solar Cell Based on Co‐Sensitization of CdS/CdSe

Cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dots (QDs) are sequentially assembled onto a nanocrystalline TiO₂ film to prepare a CdS/CdSe co‐sensitized photoelectrode for QD‐sensitized solar cell application. The results show that CdS and CdSe QDs have a complementary effect in the light harvest and the performance of a QDs co‐sensitized solar cell is strongly dependent on the order of CdS and CdSe respected to the TiO₂. In the cascade structure of TiO₂/CdS/CdSe electrode, the re‐organization of energy levels between CdS and CdSe forms a stepwise structure of band‐edge levels which is advantageous to the electron injection and hole‐recovery of CdS and CdSe QDs. An energy conversion efficiency of 4.22% is achieved using a TiO₂/CdS/CdSe/ZnS electrode, under the illumination of one sun (AM1.5,100 mW cm^?2). This efficiency is relatively higher than other QD‐sensitized solar cells previously reported in the literature.     

PbS/CdS/ZnS Quantum Dots: A Multifunctional Platform for In Vivo Near‐Infrared Low‐Dose Fluorescence Imaging

Over the past decade, near‐infrared (NIR)‐emitting nanoparticles have increasingly been investigated in biomedical research for use as fluorescent imaging probes. Here, high‐quality water‐dispersible core/shell/shell PbS/CdS/ZnS quantum dots (hereafter QDs) as NIR imaging probes fabricated through a rapid, cost‐effective microwave‐assisted cation exchange procedure are reported. These QDs have proven to be water dispersible, stable, and are expected to be nontoxic, resulting from the growth of an outer ZnS shell and the simultaneous surface functionalization with mercaptopropionic acid ligands. Care is taken to design the emission wavelength of the QDs probe lying within the second biological window (1000–1350 nm), which leads to higher penetration depths because of the low extinction coefficient of biological tissues in this spectral range. Furthermore, their intense fluorescence emission enables to follow the real‐time evolution of QD biodistribution among different organs of living mice, after low‐dose intravenous administration. In this paper, QD platform has proven to be capable (ex vivo and in vitro) of high‐resolution thermal sensing in the physiological temperature range. The investigation, together with the lack of noticeable toxicity from these PbS/CdS/ZnS QDs after preliminary studies, paves the way for their use as outstanding multifunctional probes both for in vitro and in vivo applications in biomedicine.     

Highly Stable Colloidal “Giant” Quantum Dots Sensitized Solar Cells

Colloidal quantum dots (QDs) are widely studied due to their promising optoelectronic properties. This study explores the application of specially designed and synthesized “giant” core/shell CdSe/(CdS)_x QDs with variable CdS shell thickness, while keeping the core size at 1.65 nm, as a highly efficient and stable light harvester for QD sensitized solar cells (QDSCs). The comparative study demonstrates that the photovoltaic performance of QDSCs can be significantly enhanced by optimizing the CdS shell thickness. The highest photoconversion efficiency (PCE) of 3.01% is obtained at optimum CdS shell thickness ≈1.96 nm. To further improve the PCE and fully highlight the effect of core/shell QDs interface engineering, a CdSe_x S_1?x interfacial alloyed layer is introduced between CdSe core and CdS shell. The resulting alloyed CdSe/(CdSe_x S_1?x )₅/(CdS)₁ core/shell QD‐based QDSCs yield a maximum PCE of 6.86%, thanks to favorable stepwise electronic band alignment and improved electron transfer rate with the incorporation of CdSe_x S_1?x interfacial layer with respect to CdSe/(CdS)₆ core/shell. In addition, QDSCs based on “giant” core/CdS‐shell or alloyed core/shell QDs exhibit excellent long‐term stability with respect to bare CdSe‐based QDSCs. The giant core/shell QDs interface engineering methodology offers a new path to improve PCE and the long‐term stability of liquid junction QDSCs.     

Tuning the performance of hybrid organic/inorganic quantum dot light-emitting devices

The luminescence of inorganic core-shell semiconductor nanocrystal quantum dots (QDs) can be tuned across much of the visible spectrum by changing the size of the QDs while preserving a spectral full width at half maximum (FWHM) as narrow as 30 nm and photoluminescence efficiency of 50% [Journal of Physical Chemistry B 101 (46) (1997) 9463] [1]. Organic capping groups, surrounding the QD lumophores, facilitate processing in organic solvents and their incorporation into organic thin film light-emitting device (LED) structures [Nature 370 (6488) (1994) 354] [2]. A recent study has shown that hybrid organic/inorganic QD-LEDs can indeed be fabricated with high brightness and small spectral FWHM, utilizing a phase segregation process which self-assembles CdSe(ZnS) core(shell) QDs onto an organic thin film surface [Nature 420 (6917) (2002) 800] [3]. We now demonstrate that the phase segregation process can be generally applied to the fabrication of QD-LEDs containing a wide range of CdSe particle sizes and ZnS overcoating thicknesses. By varying the QD core diameter from 32 Å to 58 Å, we show that peak electroluminescence is tuned from 540 nm to 635 nm. Increase in the QD shell thickness to 2.5 monolayers (∼0.5 nm) improves the LED external quantum efficiency, consistent with a Förster energy transfer mechanism of generating QD excited states. In this work we also identify the challenges in designing devices with very thin (∼5 nm thick) emissive layers [Chemical Physics Letters 178 (5–6) (1991) 488] [4], emphasizing the increased need for precise exciton confinement. In both QD-LEDs and archetypical all-organic LEDs with thin emissive layers, we show that there is an increase in the exciton recombination region width as the drive current density is increased. Overall, our study demonstrates that integration of QDs into organic LEDs has the potential to enhance the performance of thin film light emitters, and promises to be a rich field of scientific endeavor.     

Red,Green, and Blue Light‐Emitting Polyfluorenes Containing a Dibenzothiophene‐S,S‐Dioxide Unit and Efficient High‐Color‐Rendering‐Index White‐Light‐Emitting Diodes Made Therefrom

A series of blue (B), green (G) and red (R) light‐emitting, 9,9‐bis(4‐(2‐ethyl‐hexyloxy)phenyl)fluorene (PPF) based polymers containing a dibenzothiophene‐S,S‐dioxide (SO) unit (PPF‐SO polymer), with an additional benzothiadiazole (BT) unit (PPF‐SO‐BT polymer) or a 4,7‐di(4‐hexylthien‐2‐yl)‐benzothiadiazole (DHTBT) unit (PPF‐SO‐DHTBT polymer) are synthesized. These polymers exhibit high fluorescence yields and good thermal stability. Light‐emitting diodes (LEDs) using PPF‐SO25, PPF‐SO15‐BT1, and PPF‐SO15‐DHTBT1 as emission polymers have maximum efficiencies LE_max = 7.0, 17.6 and 6.1 cd A^?1 with CIE coordinates (0.15, 0.17), (0.37, 0.56) and (0.62, 0.36), respectively. 1D distributed feedback lasers using PPF‐SO30 as the gain medium are demonstrated, with a wavelength tuning range 467 to 487 nm and low pump energy thresholds (≥18 nJ). Blending different ratios of B (PPF‐SO), G (PPF‐SO‐BT) and R (PPF‐SO‐DHTBT) polymers allows highly efficient white polymer light‐emitting diodes (WPLEDs) to be realized. The optimized devices have an attractive color temperature close to 4700 K and an excellent color rendering index (CRI) ≥90. They are relatively stable, with the emission color remaining almost unchanged when the current densities increase from 20 to 260 mA cm^?2. The use of these polymers enables WPLEDs with a superior trade‐off between device efficiency, CRI, and color stability.     

Core/Shell PbSe/PbS QDs TiO2 Heterojunction Solar Cell

Quasi type‐II PbSe/PbS quantum dots (QDs) are employed in a solid state high efficiency QD/TiO₂ heterojunction solar cell. The QDs are deposited using layer‐by‐layer deposition on a half‐micrometer‐thick anatase TiO₂ nanosheet film with (001) exposed facets. Theoretical calculations show that the carriers in PbSe/PbS quasi type‐II QDs are delocalized over the entire core/shell structure, which results in better QD film conductivity compared to PbSe QDs. Moreover, PbS shell permits better stability and facile electron injection from the QDs to the TiO₂ nanosheets. To complete the electrical circuit of the solar cell, a Au film is evaporated as a back contact on top of the QDs. This PbSe/PbS QD/TiO₂ heterojunction solar cell produces a light to electric power conversion efficiency (η) of 4% with short circuit photocurrent (J_sc) of 17.3 mA/cm². This report demonstrates highly efficient core/shell near infrared QDs in a QD/TiO₂ heterojunction solar cell.