静电纺丝法制备PAN/PEO聚合物电解质膜

利用静电纺丝法制备了聚丙烯腈(PAN)/聚氧化乙烯(PEO)复合纳米纤维膜.利用原子力显微镜(AFM)、电子显微镜(SEM)分析了纤维的直径分布、整体形貌及单根纳米纤维的表面形貌;应用傅里叶变换红外光谱(FT-IR)分析了PAN、PAN/PEO、PEO纳米纤维膜的化学组成;同时借助热重(TG)和液滴形状分析仪分析了PEO的加入对复合纤维膜热性能及润湿性能的影响.结果表明:在PAN/PEO比例为5∶5时,纤维膜最有利于制备聚合物电解质膜.     

PAN纳米纤维复合纱线的制备及性能分析

以聚合物聚丙烯腈(PAN)为原料、涤纶长丝为芯纱,采用改进的静电纺丝技术成功制备了不同浓度的PAN纳米纤维复合纱线,并利用扫描电子显微镜(SEM)、电子单纱强力仪等对纳米复合纱线的微观形态和拉伸性能等进行了测试表征。结果表明:PAN溶液的浓度对纳米纤维直径和复合纱线的性能有很大影响,纳米纤维的直径随着PAN溶液浓度的增加而增加,当聚合物PAN溶液浓度为0.12 g/mL时,包覆在涤纶长丝表面的纤维均匀度最好,断裂强力达到最大值328.20 cN/tex,拉伸长度为75.69 mm,芯吸高度升到最高值7.7 cm,复合纱线的回潮率达到1.98%。     

PAN/BaTiO_3电纺纤维膜的制备及其压电性能

为了提高PAN的压电性能,利用静电纺丝法制备了不同BaTiO_3质量分数下PAN电纺纤维膜,通过实验室自制压电设备、SEM、FTIR、XRD以及介电谱仪等对电纺纤维膜压电性能进行表征与分析.测试结果表明:用硅烷偶联剂(KH550)处理后的BaTiO_3可均匀地分散在PAN纳米纤维内.与PAN电纺纤维膜相比,当BaTiO_3质量分数为12.5%时PAN/BaTiO_3电纺纤维膜的输出电压提高了300%,介电常数提高了300%,而介电损耗却降低了67%;FTIR与XRD测试结果显示,BaTiO_3的加入可促进PAN从31螺旋构象向平面锯齿构象的转变,从而提高PAN的压电性能.     

PVDF纳米纤维膜的制备及其油水分离性能

针对静电纺丝纳米纤维膜孔径偏大的问题,以聚偏氟乙烯(PVDF)为成膜聚合物,N,N-二甲基甲酰胺(DMF)/丙酮为混合溶剂制得纺丝液,采用静电纺丝技术制备PVDF纳米纤维膜,并研究聚合物浓度对纳米纤维膜孔结构及油水分离性能的影响。结果表明：增大纺丝液浓度会明显提高PVDF纳米纤维直径,使得纳米纤维直径分布变窄;当PVDF质量分数为14%时,所得PVDF纳米纤维膜具有较好的表面形貌和拉伸强度;油水分离结果表明,重油体系(二氯甲烷+水)通量最大达2 900.86 L/(m²·h),分离效率高达99.5%,高粘附油体系(玉米油+水)通量最小为32.98 L/(m²·h),分离效率仅有91.7%。在进一步的油包水乳液分离过程中,PVDF纳米纤维膜(M-3)具有的油水分离通量为7.9 L/(m²·h),分离效率高达97.6%。     

改性PAN基纳米纤维膜的防水透气性能研究

用超声分散法对二氧化硅(SiO_2)纳米颗粒进行分散处理,加入聚丙烯腈(PAN)进行PAN的溶解,经气流纺丝工艺制备SiO_2/PAN杂化纳米纤维膜,并在空气中低温煅烧进行预氧化处理,用该方法制得的纤维膜具有良好的透气性。使用扫描电子显微镜对纤维膜表面进行观察,研究了不同SiO_2掺杂量的纤维膜表面形貌与防水透气性能的变化。结果显示,SiO_2的加入和预氧化大大提高了材料表面的粗糙度,减少了纤维膜内的微孔孔径,提高了PAN纳米纤维膜的拉伸强度,从而使预氧化SiO_2/PAN杂化纳米纤维膜具有良好的防水透气性。     

静电纺制备TiO2/PVA复合纳米纤维及其光催化性能研究

通过静电纺丝的方法制备一种以二氧化钛(TiO2)为催化剂,聚乙烯醇(PVA)为载体的TiO2/PVA复合纳米纤维光催化材料。使用FE-SEM,XRD,Tg,FTIR对制备的TiO2/PVA复合纳米纤维膜进行了表征,并考察了其紫外光照射下光催化降解罗丹明B(Rh B)的能力。结果表明:制备的TiO2/PVA复合纳米纤维具有较高的光催化活性。     

静电纺再生纤维素复合纳米纤维的制备及其性能研究

利用静电纺丝制备聚丙烯腈/醋酸纤维素(PAN/CA)复合纳米纤维膜,并依次用0.05mol/L、0.1mol/L NaOH溶液对其进行水解处理,制得聚丙烯腈/再生纤维素(PAN/RC)复合纳米纤维膜.研究表明:纺丝液流量为0.5mL/h,所施加的电压为17kV,接收距离为18cm时,制得的PAN/CA复合纳米纤维直径更均匀,成丝形态更稳定.对PAN/CA复合纳米纤维膜及PAN/RC复合纳米纤维膜分别进行电镜扫描、红外光谱分析及静态接触角测定.结果表明:水解后的复合纳米纤维形态保持稳定,PAN/CA复合纳米纤维中的醋酸纤维素的酯基在碱处理后得到有效水解,复合纳米纤维膜的静态接触角由水解前的124.7°降低为10.1°,亲水性能得到大幅提升.     

PAN分子构象对其纳米纤维膜压电性能的影响

采用静电纺丝的方法制备不同浓度PAN纳米纤维膜,探讨了不同分子构象对PAN纳米纤维膜压电性能的影响。并对其残余电荷量进行处理,研究了PAN分子构象的变化及其压电性能的关系。结果表明,纺丝质量分数为11%时所制备的PAN纳米纤维膜,其平面锯齿分子构象含量最高,电压输出达到6日报V,电流输出达到5.5μA,说明PAN的平面锯齿分子构象对其压电性能具有直接影响。经过异丙醇的处理后,使得其残余电荷量减少,电压输出为3.4 V,电流输出为3μA。     

离心纺丝法制备PTFE/PVA复合微/纳米纤维膜

以聚四氟乙烯(PTFE)乳液和聚乙烯醇(PVA)为原料,用离心纺丝法制备出PTFE/PVA复合纤维膜前驱体,再通过高温烧结成形,制得一系列PTFE/PVA复合微/纳米纤维膜。研究了共混纺丝液中PVA的质量分数对纺丝效果的影响以及烧结温度、烧结时间的变化对复合纤维膜的结构和性能的影响,对纤维膜的微观形貌和结构进行了表征,并测试了纤维膜的水接触角、孔径、力学性能。结果表明:当纺丝液中PVA的质量分数为7%时,离心纺丝制得的纤维膜形态最好,粗细较为均匀,且直径分布范围较窄;经过高温烧结,复合纤维膜表面粗糙度均提高,疏水性增强,平均孔径和力学性能随着处理温度和处理时间的变化而波动;当烧结温度为370℃,烧结时间为20 min时,所得膜拉伸强度较高,且断裂伸长率也保持了相对较高的水平。     

静电离心纺高效空气过滤超细纤维膜的制备

为有效隔离空气中的PM_(2.5)颗粒,利用静电离心纺丝技术,以聚丙烯腈(PAN)和N,N-二甲基甲酰胺(DMF)为原料制备具有一定蓬松度且纤维排列有序的超细纤维膜。研究PAN分子量、PAN/DMF比例、针头尺寸、纺丝转速对超细纤维膜形貌及直径的影响,分析纤维膜克重及过滤风速对超细纤维膜过滤效率及空气阻力的影响。结果表明:当PAN分子量为1.5×10~5,PAN/DMF质量比为15/85,针头规格为27G,转速为2500 r/min时,制备的超细纤维膜纤维排列紧密,没有明显串珠存在,其形貌最佳;所得超细纤维膜对PM_(2.5)过滤性能达到98%以上,空气压降低于20 Pa,可有效阻隔PM_(2.5)颗粒,将为新型空气过滤材料开发提供参考。     

浅析英语语音教学中的/n//l/发音错误

在大学英语教学过程中,有关/n/与/l/的发音错误很常见,原因是没有完全掌握它们的发音规则。/n//l/发音规则的相似性造成了/n//l/不分的情况,而且局部方言中这两个音也不作区分,使得/n//l/混淆的情况更加严重。在教学过程中,可以通过重点讲解区分/n/与/l/的发音规则及其区别来避免/n//l/发音错误。本文同时也分析了含糊/l/音的发音错误,通过对/n/与/l/相关的发音错误分析找出大学英语语音教学行之有效的途径:在完全把握单音的发音规则的基础上,进一步强调语调的掌握,使学生拥有良好的语音。     

肼类燃料液滴的亚临界——超临界蒸发/分解燃烧理论

对肼、一甲基肼、偏二甲肼的亚临界－－超临界蒸发／分解燃烧进行了研究,计算了肼类燃料滴在不同压力下液滴温度和蒸发速度的变化历程,计算了蒸发常数、传热数和传质数,其结果和实验数据是吻合的。本文不但考虑了肼类燃料滴的亚临界蒸发／分解燃烧,还考虑到了其超临界蒸发／分解燃烧,并对达到超临界工况时的界限参数进行了计算。     

Reliability of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode that consisted of Au/PZT/BIT/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The reliability issues (I-V characteristics, capacitance retention, fatigue and imprint) were investigated. The I-V curve showed the conventional Schottky diode characteristics with a small current density of - 5.3×10 -10 A/cm2 at a voltage of - 4 V and 6.7×10-8 A/cm2 at a voltage of + 4V, and this characteristic can be maintained below 50℃. The capacitance variety of the ferroelectric diode was only 5 % in 10 hours after withdrawing the applied bias of + 5 V or - 5 V, indicating the diode had good capacitance retention. By applying 100 kHz bipolar pulses of 5 V amplitude, the decay in remanent polarization was only 10% after 109 switching cycles, and meanwhile the increase in coercive field was 12%. After being irradiated for 20 min with a 200 W ultraviolet ray lamp, the remanent polarization and coercive field had both varied, and a voltage shift was obse     

铬/氢/空气/氯体系的焚烧动力学分析

对含铬固体废物焚烧体系进行动力学分析是提出控制六价铬化合物排放措施的基础。本文对铬/氢/空气/氯焚烧体系进行了动力学分析,研究了温度、初始氯含量对产物中六价铬化合物含量的影响。研究表明,六价铬化合物主要以CrO2(OH)2的形式出现,最高含量出现在1700K左右;氯的存在没有导致六价铬化合物CrO2Cl2的大量生成;六价铬化合物CrO2(OH)2的含量随初始氯含量的增大略有下降。建议含铬固体废物实际焚烧过程中,避开1700K左右的温度区域,减少六价铬化合物的排放。     

Low temperature properties of organic-inorganic Ag/ p -CuPc/ n -GaAs/Ag photoelectric sensor

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/p-CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature range of 82 to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that such sensor parameters as rectification ratio, threshold voltage, junction, shunt and series resistances, open-circuit voltage and short circuit current are temperature-dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similarly to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films, the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results. Supported by the National Engineering and Scientific Commission of Pakistan     

减小ITO/PTCDA/P-Si/Al型光电探测器暗电流的方法

有机/无机同型异质结是一种新型的光电子元器件,由于它有制备工艺简单,一致性和稳定性好,光电转换效率高,频响特性宽等优点,在光电子领域将有广泛的应用前景.将有机半导体材料苝四甲酸二酐淀积在10 Ω·cm的P-Si无机半导体片上,形成有机/无机同型异质结,然后采用各种工艺处理方法有效的降低了它的暗电流,暗电流减小到了10-9A数量级.对降低暗电流的工艺措施和方法进行了分析和讨论.实验结果还表明,ITO/PTCDA/P-Si/Al同型异质结的暗电流主要成分是耗尽区中载流子的产生-复合电流结的反向饱和电流.     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯(St)、丙烯酸丁酯(BA)、甲基丙烯酸(MAA)、丙烯酸(AA)、醋酸乙烯酯(VAc)的复合乳液。分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响。通过正交试验确定组分的适当配比。该共聚乳液的粘度及固体含量符合要求,稳定性好,性能价格比高。应用表明:用此乳液配制成地毯乳胶,胶膜具有良好的机械性能。     

St/BA/MAA/AA/VAC复合乳液的合成及其应用

采用半连续乳液种子聚合法合成苯乙烯（St）、丙烯酸丁酯（BA）、甲基丙烯酸 （MAA）、丙烯酸（AA）、醋酸乙烯酯 （VAc）的复合乳液.分析了丙烯酸对乳液电解质性能的影响,引发剂对聚合反应转化率的影响及乳化剂含量对乳液粘度的影响.通过正交试验确定组分的适当配比.该共聚乳液的粘度及固体含量符合要求,稳定性好, 性能价格比高.应用表明：用此乳液配制成地毯乳胶,胶膜具有良好的机械性能.     

Modification of LiCo1/3Ni1/3Mn1/3O2 cathode material by CeO2-coating

LiCo_1/3Ni_1/3Mn_1/3O₂ was coated by a layer of 1.0 wt% CeO₂ via sol-gel method. The bared and coated LiMn_1/3Co_1/3Ni_1/3O₂ was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), cyclic voltammogram (CV) and galvanotactic charge-discharge test. The results show that the coating layer has no effect on the crystal structure, only coating on the surface; the 1.0 wt% CeO₂-coated LiCo_1/3Ni_1/3Mn_1/3O₂ exhibits better discharge capacity and cycling performance than the bared LiCo_1/3Ni_1/3Mn_1/3O₂. The discharge capacity of 1.0 wt% CeO₂-coated cathode is 182.5 mAh·g⁻¹ at a current density of 20 mA·g⁻¹, in contrast to 165.8 mAh·g⁻¹of the bared sample. The discharge capacity retention of 1.0 wt% CeO₂-coated sample after 12 cycles reaches 93.2%, in comparison with 86.6% of the bared sample. CV results show that the CeO₂ coating could suppress phase transitions and prevent the surface of cathode material from direct contact with the electrolyte, thus enhance the electrochemical performance of the coated material.     

Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

A ferroelectric memory diode consisting of Au/PZT/BIT/p-Si multilayer configuration has been fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the memory characteristics are investigated. The P-E curve of the PZT/BIT/p-Si films system had an asymmetry saturated hysteresis loop with P, = 15 μC/cm2 and Ec = 48 kV/cm, and the decay in remanent polarization was only 10% after 109 switching cycles, meanwhile the increase in coercive field was 12% . The C-V hysteresis loop and the I-V curve showed a memory effect derived from the ferroelectric polarization of PZT/BIT films, and the current density was 6.7 × 10-8 A/cm2 at a voltage of + 4V. Our diode had nonvolatile and nondestructive memory readout operation. There was a read current disparity of 0.05 μA for logic "1" and logic "0" at a read voltage of + 2V, and the stored logical value ("1" or "0") could be read out in 30 min.