A yellow-emitting Ca3Si2O7: Eu phosphor for white LEDs

A series of yellow-emitting phosphors based on a silicate host matrix, Ca_3 − xSi₂O₇: xEu²⁺, was prepared by solid-state reaction method. The structure and photoluminescent properties of the phosphors were investigated. The XRD results show that the Eu²⁺ substitution of Ca²⁺ does not change the structure of Ca₃Si₂O₇ host and there is no impurity phase for x < 0.12. The SEM images display that phosphors aggregate obviously and the shape of the phosphor particle is irregular. The EDX results reveal that the phosphors consist of Ca, Si, O, Eu and the concentration of these elements is close to the stoichiometric composition. The Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be excited at a wavelength of 300-490 nm, which is suitable for the emission band of near ultraviolet or blue light-emitting-diode (LED) chips. The phosphors exhibit a broad emission region from 520 to 650 nm and the emission peak centered at 568 nm. In addition, the shape and the position of the emission peak are not influenced by the Eu²⁺ concentration and excitation wavelength. The phosphor for x = 0.045 has the strongest excitation and emission intensity, and the Ca_3 − xSi₂O₇: xEu²⁺ phosphors can be used as candidates for the white LEDs.     

Long wavelength Ce emission in Y6Si3O9N4 phosphors for white-emitting diodes

Y₆Si₃O₉N₄:Ce³⁺ phosphor was prepared by a solid-state reaction in reductive atmosphere. X-ray powder diffraction (XRD) analysis confirmed the formation of Y₆Si₃O₉N₄:Ce³⁺. Scanning electron microscopy (SEM) observation indicated that the microstructure of the phosphor consisted of irregular fine grains with an average size of about 5 μm. Photoluminescence (PL) measurements showed that the phosphor can be efficiently excited by near ultraviolet (UV) or blue light excitation, and exhibited bright green emission peaked at about 525 nm. Compared with Ce³⁺-doped Y₄Si₂O₇N₂ phosphors, Ce³⁺-doped Y₆Si₃O₉N₄ phosphors showed longer wavelengths of both excitation and emission. The Y₆Si₃O₉N₄:Ce³⁺ is a potential green-emitting phosphor for white LEDs.     

Sr3.5Mg0.5Si3O8Cl4: Eu bluish-green-emitting phosphor for NUV-based LED

Sr₄Si₃O₈Cl₄:Eu²⁺ and Sr_3.5Mg_0.5Si₃O₈Cl₄:Eu²⁺ phosphors were prepared by a conventional solid state reaction (SS). Excited by 370 nm near-ultraviolet light, the phosphors show an efficient bluish-green wide-band emission centering at 484 nm, which originates from the 4f5d¹ → 4f⁷ transition of Eu²⁺ ion. The excitation spectra of the phosphors are a broad band extending from 250 nm to 400 nm. Mg²⁺-codoping greatly enhances the bluish-green emission of the phosphors. An LED was fabricated by coating the Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ phosphor onto an ~ 370 nm-emitting InGaN chip. The LED exhibits bright bluish-green emission under a forward bias of 20 mA. The results indicate that Sr_3.5Mg_0.5Si₃O₈Cl₄:0.08Eu²⁺ is a candidate as a bluish-green component for fabrication of NUV-based white LEDs.     

Effects of Zn doping on the structural and luminescent properties of Sr4Si3O8Cl4:Eu phosphors

Sr₄Si₃O₈Cl₄: Eu²⁺ phosphors were synthesized by the solid-reaction at high temperature. The emission intensity reaches a maximum at 0.08 mol% of Eu²⁺ concentration. The present paper mainly focused on the effects of Zn²⁺ on the crystallization behavior and photoluminescence (PL) properties of Sr₄Si₃O₈Cl₄:0.08Eu²⁺. Results suggested that no new phase is introduced by co-doping with a small amount of Zn²⁺ ions, but when co-doped with excessive amount of Zn²⁺ ions, Sr₂ZnSi₂O₇ appears. We find that the co-doping of a small amount of Zn²⁺ could remarkably improve the PL intensity of Sr₄Si₃O₈Cl₄:0.08Eu²⁺. When x = 0.05, the intensity of Sr₄Si₃O₈Cl₄:0.08Eu²⁺,xZn²⁺ was increased up to 2.3 times that of pure Sr₄Si₃O₈Cl₄:0.08Eu²⁺, which could be attributed to the flux effect of Zn²⁺ ions, and the Zn²⁺ doping reduces the opportunities of the energy transfer between Eu²⁺.     

Electronic structure and photoluminescence properties of Eu-activated Ca4Si2O7F2

The blue-emitting phosphors Ca_(4−x)Eu_xSi₂O₇F₂ (0 < x ? 0.05) have been prepared by solid-state reaction and the photoluminescence properties have been studied systematically. The electronic structure of calcium fluoride silicate Ca₄Si₂O₇F₂ was calculated using the CASTEP code. The calculation results of electronic structure show that Ca₄Si₂O₇F₂ has an indirect band gap with 5 eV. The top of the valence band is dominated by O 2p and Si 3p states, while the bottom of the conduction band is mainly composed of Ca 3d states. Under the 350 nm excitation, the obtained sample shows a broad emission band in the wavelength range of 400-500 nm with peaks of 413 nm and 460 nm from two different luminescence centers, respectively. The relative intensity of the two peaks changes with the alteration of the Eu²⁺ concentration. The strong excitation bands of the powder in the wavelength range of 200-420 nm are favorable properties for the application as lighting-emitting-diode conversion phosphor.     

A reddish La2O2S-based long-afterglow phosphor with effective absorption in the visible light region

Sm³⁺-activated La₂O₂S phosphors with good crystallinity were prepared by solid-state reaction. The formation mechanism of La₂O₂S formation was assumed and the phase change with different temperatures was discussed. The luminescence properties of phosphors with different sintering temperatures and different doping concentrations of Sm³⁺were investigated. The emission peak at 605 nm showed a well intensity can be attributed to the ⁴G_5/2 → ⁶H_7/2 transition of Sm³⁺. The optical absorption of La₂O₂S phosphors showed a stronger intensity in UV-vis region comparing with the Y₂O₂S phosphors. The long afterglow properties were investigated after the phosphors were excited with a fluorescent lamp. Phosphorescence lasted for about 3 min in the limit of light perception of the dark-adapted human eye (0.32 mcdm⁻²).     

GeO2 dopant induced enhancement of red emission in CaAl12O19:Mn phosphor

In order to search efficient red-emitting phosphors for white LEDs application, CaAl₁₂O₁₉:Mn⁴⁺ phosphors have been prepared by a combustion method assisted with GeO₂ flux. The influence of GeO₂ concentration and annealing temperature on the structure and luminescence intensity for the phosphors has been investigated. The mechanism for luminescence enhancement has been discussed. At GeO₂ doping concentration of 1.5 mol%, the red emission intensity increases by 81% under 330 nm UVA excitation. More isolated luminescence center Mn⁴⁺ ions rather than pairs of Mn⁴⁺-Mn²⁺ ions are formed in the lattice with the introduction of GeO₂ at high temperature oxidation, leading to the enhancement of the red emission. A feasible new way to enhance the red emission in CaAl₁₂O₁₉:Mn⁴⁺ phosphor is obtained.     

Structural and spectroscopic characterization of Yb doped Lu2O3 transparent ceramics

Yb³⁺ doped Lu₂O₃ transparent ceramics were fabricated by the solid-state reaction method and sintered in H₂ atmosphere. Structural and spectroscopic properties of Yb:Lu₂O₃ ceramics were studied. The Yb:Lu₂O₃ ceramic structure, and the lattice parameter are refined with the Rietveld method. Yb:Lu₂O₃ has broad absorption and emission bands with a long fluorescence lifetime (1.31 ms). The energy level diagram is calculated based on the absorption and emission spectra, Yb³⁺ in Lu₂O₃ ceramics exhibits a big splitting energy of the ²F_7/2 ground state (1023 cm⁻¹). Furthermore, the gain cross-section (σ_g) is estimated with different β values.     

Preparation and characterization of Sr4Al2O7:Eu, Eu phosphors

A new composition of red strontium aluminate phosphor (Sr₄Al₂O₇:Eu³⁺, Eu²⁺) is synthesized using a solid state reaction method in air and in a reducing atmosphere. The investigation of firing temperature indicates that a single phase of Sr₄Al₂O₇ is formed when the firing temperature is higher than 1300 °C and that a Sr₃Al₂O₆ phase is formed as the main peak below 1300 °C. The effects of firing temperature and doping concentration on luminescent properties are investigated. Sr₄Al₂O₇ phosphors exhibit the typical red luminescent properties of Eu³⁺ and Eu²⁺. A comparison photoluminescence study with Sr₃Al₂O₆ phosphor shows that Sr₄Al₂O₇ has higher emission intensity than Sr₃Al₂O₆ as a result of the higher optimum doping concentration of Sr₄Al₂O₇ phosphor.     

M2Si5N8:Eu-based (M = Ca, Sr) red-emitting phosphors fabricated by nitrate reduction process

M₂Si₅N₈:Eu²⁺-based (M = Ca, Sr) red-emitting phosphors were fabricated at relatively low temperature (1200 °C) and atmospheric pressure using a simple solid-state reaction process. Several processing parameters were systematically investigated to optimize the phosphors structural characterization and photoluminescence performance, including the amount of europium and the properties of the precursor and activated materials. The as-prepared M₂Si₅N₈:Eu²⁺-based (M = Ca, Sr) phosphors were orange in color and emitted intensively in the red region of 580-670 nm under 465 nm excitation. This simple fabrication technique can be readily used for the optimization of phosphor microstructures and high-performance red-emitting phosphors since it eliminates many air-sensitive precursors.     

Luminescence and energy transfer of Mn co-doped SrSi2O2N2:Eu green-emitting phosphors

Eu²⁺ and Mn²⁺ co-doped SrSi₂O₂N₂ green-phosphors, with promising luminescent properties (examined by their powder diffuse reflection, photoluminescence excitation and emission spectra) suitable for UV converted white LEDs, were produced by high temperature solid-state reaction method. The produced materials exhibited intense broad absorption bands at 220–500 nm and a broad emission band centered at ca. 530 nm, attributed to 4f–5d transitions of Eu²⁺. The emission intensity of Eu²⁺ ions was greatly enhanced by introducing Mn²⁺ ions into SrSi₂O₂N₂:Eu²⁺ due to the energy transfer from Mn²⁺ to Eu²⁺. The energy transfer probability from Mn²⁺ to Eu²⁺ depends strongly on the Mn²⁺ concentration, which is maximized at a Mn²⁺ concentration of 3 mol%. It drastically decreases for higher concentrations. The results indicated that SrSi₂O₂N₂:Eu²⁺, Mn²⁺ is a promising green-emitting phosphor for white-light emitting diodes with near-UV LED chips.     

Influence of excitation wavelengths on luminescent properties of Sr3Al2O6:Eu, Dy phosphors prepared by sol-gel-combustion processing

Eu²⁺ and Dy³⁺ ion co-doped Sr₃Al₂O₆ red-emitting long afterglow phosphor was synthesized by sol-gel-combustion methods using Sr(NO₃)₂, Al(NO₃)₃·9H₂O, Eu₂O₃, Dy₂O₃, H₃BO₃ and C₆H₈O₇·H₂O as raw materials. The crystalline structure of the phosphors were characterized by X-ray diffraction, luminescent properties of phosphors were analyzed by fluorescence spectrophotometer. The effect of excitation wavelengths on the luminescent properties of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors was discussed. The emission peak of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphor lays at 516 nm under the excitation of 360 nm, and at 612 nm under the excitation of 468 nm. The results reveal that the Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphor will emit a yellow-green light upon UV illumination, and a bright red light upon visible light illumination. The emission mechanism was discussed according to the effect of nephelauxetic and crystal field on the 4f⁶5d¹ → 4f⁷ transition of the Eu²⁺ ions in Sr₃Al₂O₆. The afterglow time of (Sr_0.94Eu_0.03Dy_0.03)₃ Al₂O₆ phosphors lasts for over 600s after the excited source was cut off.     

Luminescence properties of Eu-activated Ca12Al10.6Si3.4O32Cl5.4: A promising phosphor for solid state lighting

In this article, we synthesized and characterized a novel bluish green phosphor for white light-emitting diodes, Eu²⁺-activated Ca₁₂Al_10.6Si_3.4O₃₂Cl_5.4. The phosphor shows broad and strong absorption in the region (320-450 nm), which is essential for improving the efficiency and quality of white light-emitting diodes. When excited at 380 nm, the phosphor shows two emission bands at around 425 and 500 nm. The main emission peak of Eu²⁺-activated Ca₁₂Al_10.6Si_3.4O₃₂Cl_5.4 exhibits red shift in comparison with that of Eu²⁺-activated Ca₁₂Al₁₄O₃₃, which is due to the introduction of Si and Cl ions. The results show Ca₁₂Al_10.6Si_3.4O₃₂Cl_5.4 is a promising host candidate for the phosphors.     

Influence of calcination temperature on luminescent properties of Sr3Al2O6:Eu, Dy phosphors prepared by sol–gel-combustion processing

The detailed preparation process of Eu²⁺ and Dy³⁺ ion co-doped Sr₃Al₂O₆ phosphor powders with red long afterglow by sol–gel-combustion method in the reducing atmosphere is reported. X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy are used to investigate the effects of synthesis temperature on the crystal characteristics, morphology and luminescent properties of the as-synthesized Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors. The results reveal that Sr₃Al₂O₆ crystallizes completely when the combustion ash is sintered at 1200 °C. The excitation and the emission spectra indicate that the excitation broad-band lies chiefly in visible range and the phosphor powders emit strong light at 618 nm under the excitation of 472 nm. The light intensity and the light-lasting time of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors are increased when increasing the calcination temperatures from 1050 to 1200 °C. The afterglow of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors sintered at 1200 °C lasts for over 600 s when the excited source is cut off. The red emission mechanism is discussed according to the effect of nephelauxetic and crystal field on the 4f⁶5d¹ → 4f⁷ transition of the Eu²⁺ ions.     

Enhanced red emission in ZnB2O4:Eu by charge compensation

Eu³⁺ doped ZnB₂O₄ without or with different charge compensation (CC) approaches (co-doping Li⁺, Na⁺, K, decreasing the content of Zn²⁺) were prepared by solid state reactions. The phosphors can strongly absorb 393 nm ultraviolet (UV) light which is coupled well with the emission of currently used InGaN-based near UV light emitting diodes (LEDs) and emit red light with a good color purity. The luminescent intensity of phosphors can be remarkably enhanced with any of CC methods. However, the shape and position of excitation and emission spectra keep unchanged. The introduction of Li⁺ can enhance the red emission intensity of Eu³⁺ by ∼4 times with the optimal effect. Red emission of Eu³⁺ can also be enhanced with the other three CC approaches but the effects are not as good as Li⁺ because the volume unbalance in Li⁺ compensation approach is the smallest while net positive charge was offset. The results of this work suggest that volume compensation and equilibrium of mole number should also be taken into account when a CC approaches is selected.     

Preparation of Lu2Ti2O9 nano-powders from oxides by molten salt method

Nano-sized Lu₂Ti₂O₇ powders have been prepared successfully using TiO₂ and Lu₂O₃ oxides as precursors based on a modified molten salt technique. The results of XRD and SEM analysis show that two-step calcinations retards the grain growth and accelerates the phase transformation of Lu₂Ti₂O₇ more effectively in comparison with single-step calcinations. The spherical Lu₂Ti₂O₇ powders with a particle size of 50 nm are achieved by heating the precursors up to 1100 °C followed by holding at 800 °C for 30 min. Based on the above observations, a possible particle growth mechanism of two-step calcinations under molten salt conditions is also given in this paper, in which it is suggested that a high temperature (T1) can increase nucleation rate and contribute to Lu₂Ti₂O₇ phase transformation while at the same time, the growth process is limited at the lower temperature (T2 ) of the second calcinations step.     

Conversion of green emission into white light in Gd2O3 nanophosphors

Gd₂O₃ nanophosphors were prepared by combustion synthesis with and without doping of Dy³⁺ ions. The X-ray powder diffraction patterns indicate that as-prepared Gd₂O₃ and 0.1 mol% Dy₂O₃ doped Gd₂O₃ nanophosphors have monoclinic structures. The transmission electron microscope (TEM) studies revealed that the as-prepared phosphors had an average crystallite sizes around 37 nm. The excitation and emission properties have been investigated for Dy³⁺ doped and undoped Gd₂O₃ nanophosphors. New emission bands were observed in the visible region for Gd₂O₃ nanophosphors without any rare earth ion doping under different excitations. A tentative mechanism for the origin of luminescence from Gd₂O₃ host was discussed. Emission properties also measured for 0.1 mol% Dy³⁺ doped Gd₂O₃ nanophosphors and found the characteristic Dy³⁺ visible emissions at 489 and 580 nm due to ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁶H_13/2 transitions, respectively. The chromaticity coordinates were calculated based on the emission spectra of Dy³⁺ doped and undoped Gd₂O₃ nanophosphors and analyzed with Commission Internationale de l'Eclairage (CIE) chromaticity diagram. These nanophosphors exhibit green color in undoped Gd₂O₃ and white color after adding 0.1 mol% Dy₂O₃ to Gd₂O₃ nanophosphors under UV excitation. These phosphors could be a promising phosphor for applications in flat panel displays.     

Photoluminescence properties of Y2O3:Tb and YBO3:Tb green phosphors synthesized by hydrothermal method

In this work, two Tb³⁺ activated green phosphors: Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺ were prepared by hydrothermal method. Photoluminescence properties of both phosphors were studied in details. Both phosphors exhibit similar luminescent characteristics symbolized by the dominant green emission at 545 nm. Concentration quenching occurs at the Tb³⁺ concentration of 1.60 atomic% and 2.57 atomic% for Y₂O₃:Tb³⁺ and YBO₃:Tb³⁺, respectively. Luminescence decay properties were characterized to better understand the mechanism of concentration quenching. Based on the calculation, the concentration quenching in both phosphors was caused by the dipole–dipole interaction between Tb³⁺ ions.     

Plasmons in double interfaces system of Si3N4/SiO2/Si irradiated by Co

The first level plasmons of Si in the pure Si state, in the SiO₂ state and in the Si₃N₄ state (corresponding to bonding energy 116.95, 122.0 and 127.0 eV) were investigated directly with X-ray photoelectron spectroscopy before and after ⁶⁰Co radiation. The experimental results demonstrate that there existed two interfaces, one consisted of plasmons of Si in the Si₃N₄ and SiO₂ states, while another was made of plasmons of Si in the pure Si state and in the SiO₂ state. When the Si₃N₄-SiO₂-Si samples were irradiated by ⁶⁰Co, the interface at Si₃N₄/SiO₂ was extended and at the same time the center of this interface moved towards the surface of Si₃N₄. The concentration of plasmon for silicon in the SiO₂ state is decreased at the SiO₂-Si interface, and the effects of radiation bias field on plasmons in the SiO₂-Si interface are observable. Finally, the mechanism of experimental results is analyzed by the quantum effect of plasmon excited by the photoelectron.     

Comparative analysis of crystal field effects and optical spectroscopy of six-coordinated Mn ion in the Y2Ti2O7 and Y2Sn2O7 pyrochlores

The electronic energy levels of the six-coordinated Mn⁴⁺ ion in the pyrochlores Y₂B₂O₇ (B = Sn⁴⁺, Ti⁴⁺) have been computed using the exchange charge model of crystal field theory. The calculated Mn⁴⁺ energy levels and their trigonal splitting are in good agreement with the experimental spectra. The calculated crystal field parameters show that the higher crystal field strength in Y₂Sn₂O₇ arises from an increased orbital overlap effect between the Mn⁴⁺ ion and the nearest oxygen ions, which are located at the 48f crystallographic position of the pyrochlore lattice. This increased overlap in Y₂Sn₂O₇ occurs despite the fact that the Mn⁴⁺-O²⁻ bond distance in Y₂Sn₂O₇ is longer than in Y₂Ti₂O₇ and is attributed to a lack of hybridization (covalent bonding) between the filled 2p orbital of oxygen ion occupying the 48f site of the pyrochlore lattice and the filled Sn⁴⁺ 4d¹⁰ orbital. The low temperature emission spectrum of Mn⁴⁺ activated Y₂Sn₂O₇ is analyzed in terms of a weak zero phonon line (R-line) with accompanying vibrational side bands.