圆锥形阴极真空微三极管的计算机模拟

利用有限元法对圆锥形场致发射阴极的真空微三极管进行了计算机模拟。改变真空微三极管的各项结构参数及阳极和栅极电压,得到一系列模拟数据。然后对模拟结果进行分析讨论,总结出圆锥形阴极有效发射、阳极电流与真空微三极管的结构尺寸、阳极电压和栅极电压之间的关系,对于真空微三极管的实际设计和制作有一定的参考价值。     

金刚石薄膜场发射四极管的计算机模拟

采用广泛使用的粒子模拟程序MAGIC模拟了以金刚石薄膜作为发射体的真空微电子三极管和四极管的特性，得出了电子运动的轨迹图，从中可以看出上栅极对电子的会聚作用。研究了发射特性与栅极电压、发射体表面积大小等参量的关系，还讨论了电子在阳极、栅极间的分配情况。     

常开型后栅极场致发射显示板工作特性的研究

常开型后栅极场致发射显示板是一种新型的场致发射器件.它直接利用阳极使阴极产生场致电子发射,而通过埋在阴极之下的栅极上施加负电压来阻止阴极产生场致电子发射来调制显示所需的图像.为了研究该场致发射显示板的阴极发射特性,本文采用有限元法对场致发射区域内的电场分布进行了模拟计算,用Fowler-Nordheim(F-N)公式计算了阴极表面的发射情况.并研究了阳极电压、阴极电压、阴调距、阴极宽度和阴极厚度等参数的改变对阴极发射特性和栅极调制能力的影响.计算结果显示阴极发射特性和栅极调制能力与上述电参数和结构参数关系密切,从而为优化设计这种显示器件提供了方向.     

后栅极场发射显示板结构参数在公差范围内变化对工作特性的影响

后栅极场发射显示板是一种常用的场致发射器件。该器件结构由阳极、阴极和栅极组成,并且栅极置于阴极背面。本文采用模拟计算的方法研究了标准结构场发射区域内的电场分布、阴极表面的发射情况、电子轨迹和着屏束斑。并研究了关键结构参数在公差范围内变化对阴极发射特性和阳极着屏束斑的影响。计算结果显示结构参数在公差范围内的变化对阴极发射状况,阳极束斑栅极调制特性的影响很小,进而证明了后栅极结构对工艺一致性要求较低。     

共面双栅极金刚石薄膜FEAs的计算机模拟

本文提出共面双栅极金刚石薄膜的场发射阵列阴极 (FEAs) ,它由平行的栅极、共面反射极和长条型的金刚石薄膜场发射体组成。采用PIC粒子模拟软件MAGIC模拟这种结构的电子轨迹、相空间图和发射电流 电压等特性 ,并与只有栅极时的情况进行对比 ,表明反射极对电子注有会聚作用 ,能形成层流性良好的电子注 ,该结构可应用于场发射平面显示器等真空微电子器件中     

前栅极碳纳米管场发射显示板关键结构参数的研究

前栅极碳纳米管场发射显示板是一种常用的场致发射器件。该器件通过栅极与阴极之间形成的电场产生场致发射电子,在阳极高压的作用下,电子从电场中获得能量,轰击荧光粉产生可见光。本文采用模拟计算的方法研究了标准结构场发射区域内的电场分布、阴极表面的发射情况、电子轨迹和着屏束斑。并研究了关键结构参数在公差范围内变化对阴极发射特性和阳极着屏束斑的影响。计算结果显示,阴极发射状况和阳极束斑对结构参数的变化非常敏感,也证明了前栅极结构对工艺要求十分严格。     

后栅型场发射显示器窜压现象的研究

提出后栅型场发射显示器(FED)测试过程中的窜压现象,解释该现象的产生原因。阴极电极侧壁场发射电子轰击栅极导致电压表示数发生变化。针对此问题设计一种具有沟槽状介质层结构的后栅型FED从而避免阴极电极侧壁的电子发射。采用全印刷技术制作场发射显示阵列。实验表明此器件具有良好的发射稳定性及栅压调控特性,有效杜绝窜压现象的发生。阳极电压为600 V,栅极电压在100~250 V范围内对阳极电流有良好的调控作用。     

共面双栅极金刚石薄膜FEAs的计算机模拟

本提出共面双栅极金刚石薄膜的场发射阵列阴极（FEAs)，它由平行的栅极，共面反射极和长条型的金刚石薄膜场发射体组成，采用PIC粒子模拟软件MAGIC模拟这种结构的电子轨迹，相空间图和发射电流－电压等特性，并与只有栅极时的情况进行对比，表明反射极对电子注有会聚作用，能形成层流性良好的电子注，该结构可应用于场发射平面显示器等真空微电子器件中。     

后栅结构SnO2场致发射显示器件的研制

采用高温气相法生长SnO2纳米线,扫描电子显微镜和X射线衍射仪分析表明所生长的SnO2纳米线大小均匀,直径约为150 nm,长可达10μm。结合丝网印刷法转移SnO2,制备成阴极阵列。封接阴极板与荧光屏成后栅型场致发射显示(FED)器件,测试其场致发射性能,分析讨论栅极电压和阳极电压对场发射性能的影响。实验表明后栅型SnO2-FED具有良好的栅极调控作用,在1600 V阳极电压和200 V栅极电压下工作实现全屏发光,平均发光亮度为560 cd/m2,具有潜在的应用前景。     

碳纳米管薄膜场发射器件中栅极的调制特性研究

三极结构的场发射器件的研究备受关注,栅极的调制特性是三极结构的主要研究对象.本文通过计算机模拟分析碳纳米管薄膜层表面的电场分布,结合在二极结构中碳纳米管薄膜发射的实验结果,将两者代入Fowler-Nordheim公式中求得三极结构中阴极发射电流,得到不同栅极电压对发射电流的调制关系.     

A self-aligned single carbon nanotube field emission source fabricated by UV lithography

We suggest a novel process for fabricating a carbon nanotube field emission source having one carbon nanotube per gate aperture. The fabrication is based on UV lithography, instead of electron beam lithography. We used only one patterning step to define the gate, insulator, and cathode. We applied a DC voltage to the anode and a pulse signal to the gate. We then investigated the?I-V characteristics of the structure, changing the frequency and the duty-cycle of the pulse signal applied to the gate. We found that the optimum frequency and duty-cycle were 250?kHz and 22%, respectively. The structure had a turn-on voltage of 1.1?V under these conditions. The anode voltage did not have much effect. Finally, we checked the stability of the source for 40?h. We obtained an average emission current of 1.093?μA with a standard deviation of 1.019 × 10(-2)?μA.     

Plasma cathode for a broad-beam electron accelerator

We propose a grid-stabilized plasma cathode based on a slit-contracted low-pressure glow discharge with hollow anode. The area of the plasma cathode is one order of magnitude higher than that in systems where electrons are extracted immediately from plasma in the cathode cavity. Conditions for the discharge initiation, the current switching to the hollow anode, and the obtaining of uniform emission from the plasma cathode are determined. At an accelerating voltage of 160 kV, an electron beam with a 1000 × 180 mm cross section, a total current of several amperes, and a current pulse duration of up to 10⁻³ s was obtained. The plasma cathode operates under technical vacuum conditions (air, 0.1 Pa) and ensures high stability and reproducibility of the beam current pulses.     

Optimization of field emission properties of carbon nanotubes cathodes by electrophoretic deposition

Cold cathodes of carbon nanotubes (CNTs) were deposited on the glass substrate by the electrophoretic deposition (EPD) method. The cathodes were tested in the diode construction with the cathode–anode gap of 170 μm in vacuum. The emission characteristics of the CNTs film cathodes have as good properties as those by screen printing and better emission uniformity. The influence of the voltage between electrodes in the electrophoretic process of flat cold cathode fabrication on the uniformity of the CNTs film distribution was studied. The results indicate that the uniformity of CNTs film cathode by EPD depends on the voltage between electrodes during the electrophoretic deposition. The uniformity of CNTs film and optimized emission properties of the cathode have been achieved when the voltage is 25 V.     

A technique for studying the multiple emission sites on broad area electrodes in a vacuum

Observations of the transition radiation at the anode of a high voltage vacuum device using a low-light telescope have enabled the positions of the emission sites on the cathode to be determined accurately and have shown the way in which emitters are destroyed and sometimes produced at a breakdown. In addition, the electrical characteristics of the individual emission sites have been obtained by measuring the intensity of the transition radiation. This technique should allow the factors governing the voltage performance of industrial high voltage vacuum devices to be better understood.     

Forms and behaviour of vacuum emission electronic devices comprising diamond or other carbon cold cathode emitters

Nanocarbon-derived electron emission devices, specifically nanodiamond lateral field emission (FE) diodes and gated carbon nanotube (CNT) triodes, are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. For example, nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to use the material as an electron field emitter. Arrays of laterally arranged 'finger-like' nanodiamond emitters constitute the cathode in a versatile diode configuration with a small interelectrode separation. A low diode turn-on voltage of 7V and a high emission current of 90 microA at an anode voltage of 70V (electric field of approx. 7V microm(-1)) are reported for the nanodiamond lateral device. Also, a FE triode amplifier based on aligned CNTs with a low turn-on voltage and a small gate leakage current has been developed.     

基于MHD的小间隙真空电弧仿真研究

真空开关电弧电流过零前的电弧等离子体状态对真空开关能否顺利开断具有十分重要的影响。本文在建立小间隙真空电弧磁流体动力学(MHD)模型的基础上,采用通用计算流体力学仿真软件对电弧电流过零前0.5 ms时的电弧等离子体的特性进行数值仿真研究。计算得到了真空电弧等离子体压力、等离子体密度、离子纵向速度、阳极表面纵向电流密度和电弧电压等的空间分布。仿真结果表明:从阴极到阳极,真空电弧等离子体压力和密度逐渐增大,而等离子体速度逐渐减小;阳极表面电流密度存在较大径向梯度,最大值低于形成阳极斑点的极限收缩电流,阳极仍不活跃。仿真得到的等离子体密度分布与高速摄像机拍摄得到的CMOS图像光强基本吻合,计算得到的电弧电压与测得的电弧电压是一致的,从而验证了本模型的可行性。