High Detectivity Graphene‐Silicon Heterojunction Photodetector

A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high‐performance photodetectors. However, graphene/n‐Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n‐Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n‐Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10¹³ cm Hz^1/2 W^‐1 at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n‐Si heterojunction photodetectors possess high responsivity of 0.73 A W^?1 and high photo‐to‐dark current ratio of ≈10⁷. The current noise spectral density of the graphene/n‐Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors.     

Graphene–Ruthenium Complex Hybrid Photodetectors with Ultrahigh Photoresponsivity

The maximum responsivity of a pure monolayer graphene‐based photodetector is currently less than 10 mA W^?1 because of small optical absorption and short recombination lifetime. Here, a graphene hybrid photodetector functionalized with a photoactive ruthenium complex that shows an ultrahigh responsivity of ≈1 × 10⁵ A W^?1 and a photoconductive gain of ≈3 × 10⁶ under incident optical intensity of the order of sub‐milliwatts is reported. This responsivity is two orders of magnitude higher than the precedent best performance of graphene‐based photodetectors under a similar incident light intensity. Upon functionalization with a 4‐nm‐thick ruthenium complex, monolayer graphene‐based photodetectors exhibit pronounced n‐type doping effect due to electron transfer via the metal?ligand charge transfer (MLCT) from the ruthenium complex to graphene. The ultrahigh responsivity is attributed to the long lifetime and high mobility of the photoexcited charge carriers. This approach is highly promising for improving the responsivity of graphene‐based photodetectors.     

2D In2S3 Nanoflake Coupled with Graphene toward High‐Sensitivity and Fast‐Response Bulk‐Silicon Schottky Photodetector

Silicon‐based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light–matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In₂S₃ with Gr/Si PDs is demonstrated. The introduction of the double‐heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In₂S₃/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 × 10⁴ A W^?1 and fast response speed less than 40 µs, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In₂S₃/graphene/Si PD expresses outstanding long‐term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high‐sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.     

High‐Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure

Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light‐emitting devices, and photodiodes. In this work, high‐performance photovoltaic photodetectors based on MoTe₂/MoS₂ vertical heterojunctions are demonstrated by exfoliating‐restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10⁵) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W^?1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications.     

High‐Gain 200 ns Photodetectors from Self‐Aligned CdS–CdSe Core–Shell Nanowalls

1D core–shell heterojunction nanostructures have great potential for high‐performance, compact optoelectronic devices owing to their high interface area to volume ratio, yet their bottom‐up assembly toward scalable fabrication remains a challenge. Here the site‐controlled growth of aligned CdS–CdSe core–shell nanowalls is reported by a combination of surface‐guided vapor–liquid–solid horizontal growth and selective‐area vapor–solid epitaxial growth, and their integration into photodetectors at wafer‐scale without postgrowth transfer, alignment, or selective shell‐etching steps. The photocurrent response of these nanowalls is reduced to 200 ns with a gain of up to 3.8 × 10³ and a photoresponsivity of 1.2 × 10³ A W^?1, the fastest response at such a high gain ever reported for photodetectors based on compound semiconductor nanostructures. The simultaneous achievement of sub‐microsecond response and high‐gain photocurrent is attributed to the virtues of both the epitaxial CdS–CdSe heterojunction and the enhanced charge‐separation efficiency of the core–shell nanowall geometry. Surface‐guided nanostructures are promising templates for wafer‐scale fabrication of self‐aligned core–shell nanostructures toward scalable fabrication of high‐performance compact photodetectors from the bottom‐up.     

Highly Oriented Thin Films of 2D Ruddlesden‐Popper Hybrid Perovskite toward Superfast Response Photodetectors

2D hybrid perovskites have shown great promise in the photodetection field, due to their intriguing attributes stemming from unique structural architectures. However, the great majority of detectors based on this 2D system possess a relatively low response speed (≈ms), making it extremely urgent to develop new candidates for superfast photodetection. Here, a new organic–inorganic hybrid perovskite, (PA)₂(FA)Pb₂I₇ (EFA, where PA is n‐pentylaminium and FA is formamidine), which features the 2D Ruddlesden–Popper type perovskite framework that is composed of the corner‐sharing PbI₆ octahedra is reported. Significantly, photodetectors fabricated on highly oriented thin films, which exhibit a perfect orientation parallel to 2D inorganic perovskite layers, exhibit a superfast response time up to ≈2.54 ns. To the best of the knowledge, this figure‐of‐merit catches up with that of the top‐ranking commercial materials, and sets a new record for 2D hybrid perovskite photodetectors. Moreover, extremely high photodetectivity (≈1.73 × 10¹⁴ Jones, under an incident power intensity of ≈46 µW cm^?2), considerable switching ratios (>10³), and low dark current (≈10 pA) are also achieved in the detector, indicating its great potential for high‐efficiency photodetection. These results shed light on the possibilities to explore new 2D candidates for assembling future high‐performance optoelectronic devices.     

High‐Responsivity Graphene/InAs Nanowire Heterojunction Near‐Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Graphene is a promising candidate material for high‐speed and ultra‐broadband photodetectors. However, graphene‐based photodetectors suffer from low photoreponsivity and I_light/I_dark ratios due to their negligible‐gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW^?1 and I_light/I_dark ratio of 5 × 10², while the photoresponsivity and I_light/I_dark ratio of graphene infrared photodetectors are 0.1 mAW^?1 and 1, respectively. The Fermi level (E_F ) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back‐gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene‐based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.     

High Detectivity Solar‐Blind High‐Temperature Deep‐Ultraviolet Photodetector Based on Multi‐Layered (l00) Facet‐Oriented β‐Ga2O3 Nanobelts

Fabrication of a high‐temperature deep‐ultraviolet photodetector working in the solar‐blind spectrum range (190–280 nm) is a challenge due to the degradation in the dark current and photoresponse properties. Herein, β‐Ga₂O₃ multi‐layered nanobelts with (l00) facet‐oriented were synthesized, and were demonstrated for the first time to possess excellent mechanical, electrical properties and stability at a high temperature inside a TEM studies. As‐fabricated DUV solar‐blind photodetectors using (l00) facet‐oriented β‐Ga₂O₃ multi‐layered nanobelts demonstrated enhanced photodetective performances, that is, high sensitivity, high signal‐to‐noise ratio, high spectral selectivity, high speed, and high stability, importantly, at a temperature as high as 433 K, which are comparable to other reported semiconducting nanomaterial photodetectors. In particular, the characteristics of the photoresponsivity of the β‐Ga₂O₃ nanobelt devices include a high photoexcited current (>21 nA), an ultralow dark current (below the detection limit of 10^?14 A), a fast time response (<0.3 s), a high R_λ (≈851 A/W), and a high EQE (～4.2 × 10³). The present fabricated facet‐oriented β‐Ga₂O₃ multi‐layered nanobelt based devices will find practical applications in photodetectors or optical switches for high‐temperature environment.     

Ultrathin Ruddlesden–Popper Perovskite Heterojunction for Sensitive Photodetection

Thanks to their unique optical and electric properties, 2D materials have attracted a lot of interest for optoelectronic applications. Here, the emerging 2D materials, organic–inorganic hybrid perovskites with van der Waals interlayer interaction (Ruddlesden–Popper perovskites), are synthesized and characterized. Photodetectors based on the few‐layer Ruddlesden–Popper perovskite show good photoresponsivity as well as good detectivity. In order to further improve the photoresponse performance, 2D MoS₂ is chosen to construct the perovskite–MoS₂ heterojunction. The performance of the hybrid photodetector is largely improved with 6 and 2 orders of magnitude enhancement for photoresponsivity (10⁴ A W^?1) and detectivity (4 × 10¹⁰ Jones), respectively, which demonstrates the facile charge separation at the interface between perovskite and MoS₂. Furthermore, the contribution of back gate tuning is proved with a greatly reduced dark current. The results demonstrated here will open up a new field for the investigation of 2D perovskites for optoelectronic applications.     

Bilayer PbS Quantum Dots for High‐Performance Photodetectors

Due to their wide tunable bandgaps, high absorption coefficients, easy solution processabilities, and high stabilities in air, lead sulfide (PbS) quantum dots (QDs) are increasingly regarded as promising material candidates for next‐generation light, low‐cost, and flexible photodetectors. Current single‐layer PbS‐QD photodetectors suffer from shortcomings of large dark currents, low on–off ratios, and slow light responses. Integration with metal nanoparticles, organics, and high‐conducting graphene/nanotube to form hybrid PbS‐QD devices are proved capable of enhancing photoresponsivity; but these approaches always bring in other problems that can severely hamper the improvement of the overall device performance. To overcome the hurdles current single‐layer and hybrid PbS‐QD photodetectors face, here a bilayer QD‐only device is designed, which can be integrated on flexible polyimide substrate and significantly outperforms the conventional single‐layer devices in response speed, detectivity, linear dynamic range, and signal‐to‐noise ratio, along with comparable responsivity. The results which are obtained here should be of great values in studying and designing advanced QD‐based photodetectors for applications in future flexible optoelectronics.     

High‐Performance Inorganic Perovskite Quantum Dot–Organic Semiconductor Hybrid Phototransistors

All‐inorganic lead halide perovskite quantum dots (IHP QDs) have great potentials in photodetectors. However, the photoresponsivity is limited by the low charge transport efficiency of the IHP QD layers. High‐performance phototransistors based on IHP QDs hybridized with organic semiconductors (OSCs) are developed. The smooth surface of IHP QD layers ensures ordered packing of the OSC molecules above them. The OSCs significantly improve the transportation of the photoexcited charges, and the gate effect of the transistor structure significantly enhances the photoresponsivity while simultaneously maintaining high I _photo/I _dark ratio. The devices exhibit outstanding optoelectronic properties in terms of photoresponsivity (1.7 × 10⁴ A W^?1), detectivity (2.0 × 10¹⁴ Jones), external quantum efficiency (67000%), I _photo/I _dark ratio (8.1 × 10⁴), and stability (100 d in air). The overall performances of our devices are superior to state‐of‐the‐art IHP photodetectors. The strategy utilized here is general and can be easily applied to many other perovskite photodetectors.     

A Highly Sensitive Single Crystal Perovskite–Graphene Hybrid Vertical Photodetector

Organolead trihalide perovskites have attracted significant attention for optoelectronic applications due to their excellent physical properties in the past decade. Generally, both grain boundaries in perovskite films and the device structure play key roles in determining the device performance, especially for horizontal‐structured device. Here, the first optimized vertical‐structured photodetector with the perovskite single crystal MAPbBr₃ as the light absorber and graphene as the transport layer is shown. The hybrid device combines strong photoabsorption characteristics of perovskite and high carrier mobility of flexible graphene, exhibits excellent photoresponse performance with high photoresponsivity (≈1017.1 A W^?1) and high photodetectivity (≈2.02 × 10¹³ Jones) in a low light intensity (0.66 mW cm^?2) under the actuations of 3 V bias and laser irradiation at 532 nm. In particular, an ultrahigh photoconductive gain of ≈2.37 × 10³ is attained because of fast charge transfer in the graphene and large recombination lifetime in the perovskite single crystal. The vertical architecture combining perovskite crystal with highly conductive graphene offers opportunities to fulfill the synergistic effect of perovskite and 2D materials, is thus promising for developing high‐performance electronic and optoelectronic devices.     

Generalized Scheme for High Performing Photodetectors with a p‐Type 2D Channel Layer and n‐Type Nanoparticles

A generalized scheme for the fabrication of high performance photodetectors consisting of a p‐type channel material and n‐type nanoparticles is proposed. The high performance of the proposed hybrid photodetector is achieved through enhanced photoabsorption and the photocurrent gain arising from its effective charge transfer mechanism. In this paper, the realization of this design is presented in a hybrid photodetector consisting of 2D p‐type black phosphorus (BP) and n‐type molybdenum disulfide nanoparticles (MoS₂ NPs), and it is demonstrated that it exhibits enhanced photoresponsivity and detectivity compared to pristine BP photodetectors. It is found that the performance of hybrid photodetector depends on the density of NPs on BP layer and that the response time can be reduced with increasing density of MoS₂ NPs. The rising and falling times of this photodetector are smaller than those of BP photodetectors without NPs. This proposed scheme is expected to work equally well for a photodetector with an n‐type channel material and p‐type nanoparticles.     

Heterogeneous Integration of Carbon‐Nanotube–Graphene for High‐Performance,Flexible, and Transparent Photodetectors

Low‐dimensional carbon materials, such as semiconducting carbon nanotubes (CNTs), conducting graphene, and their hybrids, are of great interest as promising candidates for flexible, foldable, and transparent electronics. However, the development of highly photoresponsive, flexible, and transparent optoelectronics still remains limited due to their low absorbance and fast recombination rate of photoexcited charges, despite the considerable potential of photodetectors for future wearable and foldable devices. This work demonstrates a heterogeneous, all‐carbon photodetector composed of graphene electrodes and porphyrin‐interfaced single‐walled CNTs (SWNTs) channel, exhibiting high photoresponse, flexibility, and full transparency across the device. The porphyrin molecules generate and transfer photoexcited holes to the SWNTs even under weak white light, resulting in significant improvement of photoresponsivity from negligible to 1.6 × 10^?2 A W^?1. Simultaneously, the photodetector exhibits high flexibility allowing stable light detection under ≈50% strain (i.e., a bending radius of ≈350 µm), and retaining a sufficient transparency of ≈80% at 550 nm. Experimental demonstrations as a wearable sunlight sensor highlight the utility of the photodetector that can be conformally mounted on human skin and other curved surfaces without any mechanical and optical constraints. The heterogeneous integration of porphyrin–SWNT–graphene may provide a viable route to produce invisible, high‐performance optoelectronic systems.     

Sensitive and Stable Tin–Lead Hybrid Perovskite Photodetectors Enabled by Double‐Sided Surface Passivation for Infrared Upconversion Detection

Tin(Sn)‐based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn²⁺ is easily oxidized to Sn⁴⁺ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double‐sided interface engineering is proposed, that is, Sn‐Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn‐Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300–1050 nm, a low dark current density of 1.25 × 10^–3 mA cm^–2 at –0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn‐Pb broadband photodetectors are integrated in an infrared up‐conversion system, converting near‐infrared light into visible light. It is believed that a double‐sided passivation method can provide new strategies to achieving high‐performance perovskite photodetectors.     

Low‐Voltage Photodetectors with High Responsivity Based on Solution‐Processed Micrometer‐Scale All‐Inorganic Perovskite Nanoplatelets

All‐inorganic photodetectors based on scattered CsPbBr₃ nanoplatelets with lateral dimension as large as 10 µm are fabricated, and the CsPbBr₃ nanoplatelets are solution processed governed by a newly developed ion‐exchange soldering mechanism. Under illumination of a 442 nm laser, the photoresponsivity of photodetectors based on these scattered CsPbBr₃ nanoplatelets is as high as 34 A W^?1, which is the largest value reported from all‐inorganic perovskite photodetectors with an external driven voltage as small as 1.5 V. Moreover, the rise and fall times are 0.6 and 0.9 ms, respectively, which are comparable to most of the state‐of‐the‐art all‐inorganic perovskite‐based photodetectors. All the material synthesis and device characterization are conducted at room temperature in ambient air. This work demonstrates that the solution‐processed large CsPbBr₃ nanoplatelets are attractive candidates to be applied in low‐voltage, low‐cost, ultra highly integrated optoelectronic devices.     

A Solution‐Processed High‐Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes

Phototransistors with a structure of a nitrogen‐doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution‐processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 10⁴ A W^?1), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.     

Lateral Graphene‐Contacted Vertically Stacked WS2/MoS2 Hybrid Photodetectors with Large Gain

A demonstration is presented of how significant improvements in all‐2D photodetectors can be achieved by exploiting the type‐II band alignment of vertically stacked WS₂/MoS₂ semiconducting heterobilayers and finite density of states of graphene electrodes. The photoresponsivity of WS₂/MoS₂ heterobilayer devices is increased by more than an order of magnitude compared to homobilayer devices and two orders of magnitude compared to monolayer devices of WS₂ and MoS₂, reaching 10³ A W^?1 under an illumination power density of 1.7 × 10² mW cm^?2. The massive improvement in performance is due to the strong Coulomb interaction between WS₂ and MoS₂ layers. The efficient charge transfer at the WS₂/MoS₂ heterointerface and long trapping time of photogenerated charges contribute to the observed large photoconductive gain of ≈3 × 10⁴. Laterally spaced graphene electrodes with vertically stacked 2D van der Waals heterostructures are employed for making high‐performing ultrathin photodetectors.     

Ferroelectric Localized Field–Enhanced ZnO Nanosheet Ultraviolet Photodetector with High Sensitivity and Low Dark Current

Zinc oxide (ZnO) nanosheets have demonstrated outstanding electrical and optical properties, which are well suited for ultraviolet (UV) photodetectors. However, they have a high density of intrinsically unfilled traps, and it is difficult to achieve p‐type doping, leading to the poor performance for low light level switching ratio and a high dark current that limit practical applications in UV photodetection. Here, UV photodetectors based on ZnO nanosheets are demonstrated, whose performance is significantly improved by using a ferroelectric localized field. Specifically, the photodetectors have achieved a responsivity of up to 3.8 × 10⁵ A W^?1, a detectivity of 4.4 × 10¹⁵ Jones, and a photocurrent gain up to 1.24 × 10⁶. These device figures of merit are far beyond those of traditional ZnO ultraviolet photodetectors. In addition, the devices' initial dark current can be easily restored after continuous photocurrent measurement by using a positive gate voltage pulse. This study establishes a new approach to produce high‐sensitivity and low‐dark‐current ultraviolet photodetectors and presents a crucial step for further practical applications.     

A High-Performance Solution-Processed Organic Photodetector for Near-Infrared Sensing

Sensitive detection of near-infrared (NIR) light enables many important applications in both research and industry. Current organic photodetectors suffer from low NIR sensitivity typically due to early absorption cutoff, low responsivity, and/or large dark/noise current under bias. Herein, organic photodetectors based on a novel ultranarrow-bandgap nonfullerene acceptor, CO1-4Cl, are presented, showcasing a remarkable responsivity over 0.5 A W⁻¹ in the NIR spectral region (920–960 nm), which is the highest among organic photodiodes. By effectively delaying the onset of the space charge limited current and suppressing the shunt leakage current, the optimized devices show a large specific detectivity around 10¹² Jones for NIR spectral region up to 1010 nm, close to that of a commercial Si photodiode. The presented photodetectors can also be integrated in photoplethysmography for real-time heart-rate monitoring, suggesting its potential for practical applications.