Growth and Characterization of YBCO Thin Films by Sequential Deposition and Annealing

A novel thin film growth procedure, sequential deposition and annealing (SDA), which contains the advantages of both in situ and ex situ procedures, was proposed. Y₁Ba₂Cu₃O_{7 – x} (YBCO) high temperature superconducting thin films were grown and characterized by the SDA procedure. Purely c-axis-oriented YBCO thin films with no foreign phases and other oriented grains were successfully prepared. The superconducting transition properties of SDA-grown YBCO thin films were measured by measurement of inductance and resistance. The inductance measurements gave a T _c ^onset of 85 K and a T _c of 5 K. The resistance measurements gave a T _c ^onset of 90 K and a T _c of 5 K. Atomic force microscopy studies showed that SDA-grown YBCO thin films had micrometer-size grains surrounded by many nanometer-size grains. The nanometer-size grains in SDA-grown YBCO thin films are responsible for degradation of superconducting transition properties.     

Out-of-plane quasiparticle dynamics of the cuprate superconductors belowT c in microwave region

We have investigated the anisotropic quasiparticle conductivity in the superconducting state for microwave frequencies in YBa₂Cu₃O_7– (YBCO) and La_2–xSr_xCuO₄ (LSCO) with several hole concentrations. Common features were found for YBCO and LSCO. That is, in underdoped materials, the strong two dimensional nature was found to be retained even below T_c. On the other hand, in optimally doped and overdoped materials, the anisotropy decreases rapidly below T_c. In particular, in YBCO, it is suggested that the c-axis transport becomes coherent below T_c.     

Normal State Resistivity of Underdoped YBa2Cu3Ox Thin Films and La2-xSrxCuO4 Ultra-Thin Films under Epitaxial Strain

The normal state resistivity of high temperature superconductors can be probed in the region below T _c by suppressing the superconducting state in high magnetic fields. Here we present the normal state properties of YBa ₂ Cu ₃ O _x thin films in the underdoped regime and the normal state resistance of La _2-x Sr _x CuO ₄ thin films under epitaxial strain, measured below T _c by applying pulsed fields up to 60 T. We interpret these data in terms of the recently proposed 1D quantum transport model with the 1D paths corresponding to the charge stripes.     

MOCVD-grown homoepitaxial YBa2Cu3Ox thin films and its multilayers

YBa₂Cu₃O _x (YBCO) films, Zn-doped YBCO (YBCO : Zn) films, and their bilayers have been epitaxially grown on SrTiO₃(100) and single-crystal YBCO(001) substrates by metalorganic chemical vapour deposition. The YBCO(001) films homoepitaxially grown on YBCO(001) substrates have flat surfaces on an atomic scale, and interfaces free from crystalline defects. We can systematically reduce the superconducting transition temperature (T _c) of YBCO : Zn films from 90 K to 37 K by increasing Zn concentration. The bilayers have a sharp distribution of Zn as evaluated fromT _c measurements of the upper YBCO films and depth profiles of secondary ion mass spectrometer, suggesting the possibility to form the homoepitaxial SNS (S, superconductor; N, normal metal) junction operatable between 40 K and 90 K.     

Observation of Three Characteristic Energy Scales (Energy Gaps) in the Conductance of Underdoped YBa2Cu3O6+x Junctions

Conductance measurements in underdoped YBa₂Cu₃O_6+x (YBCO) tunneling junctions in the a–b plane are reported which reveal that in addition to the dominant d_x ^{2-y 2}-wave component of the order parameter (OP), a small is (or id_xy) component is also present, and both overlay a broad pseudogap feature. Extensive measurements by other groups from Urbana, Tel-Aviv and Jerusalem. in optimally or overdoped YBCO films showed a splitting of the zero bias peak. This was interpreted as due to the existence of a small imaginary component in the OP of YBCO. We show that also in underdoped YBCO there is an additional small is component in the OP. In ramp type (edge) junctions, oriented along different directions in the a–b plane, we find that the _x ^{2-y 2}-wave gap is suppressed in the region near the node, but has a non zero value of =3.0±0.5 mV at the node itself. This result supports the existence of a sub-dominant is component in the order parameter of underdoped YBCO.     

Silver doping: A potential means to grow high quality YBa2Cu3O7?x thin films on bare sapphire

High qualityAg-doped YBa₂Cu₃O_7–x (YBCO) thin films have been grown by laser ablation on ¯1012 bare sapphire. This work demonstrates thatAg-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of highT _c thin films.     

Microwave Surface Impedance of Nd-rich Nd 1+x Ba 2−x Cu 3 O 7−δ Thin Films

Surface impedance measurements on highly c-axis epitaxial Nd _1+x Ba _2–x Cu ₃ O ₇ (x=0, 0.09 and 0.12) films grown by d.c. magnetron sputtering on LaAlO ₃ substrates are presented. It is found that the zero temperature London penetration depth correlates well with the critical temperature of the films and with the corresponding number of carriers. The low temperature penetration depth follows a linear T law for optimally doped Nd123 sample and a T ² law in Nd-rich samples. In the case of the heavily underdoped samples (T _c < 60K) the T ² law extends to temperatures higher than T _c/2. The possible role of the Nd/Ba ions substitution on the penetration depth and surface resistance is discussed.     

In situ grown superconducting YBCO films on buffered silicon substrates for device applications

Thin films of YBa₂Cu₃O_7– (YBCO) have been grownin situ on silicon single-crystal (100) substrate by using SrTiO₃ as a buffer layer. The deposition has been carried out by on-axis rf magnetron sputtering method. The deposition condition have been optimized by studying the plasma characteristics and correlating them with the superconducting performance of the film. Films deposited at substrate temperature in the range of 680–700°C from stoichiometric YBCO targets in an argon + oxygen mixture (31) are superconducting and showc-axis epitaxy. Compositional confirmation has been carried out using Rutherford backscattering. Scanning tunneling microscopy of the films reveal formation of well-defined layered structure with some defects in the initial stages ofin situ growth of the films. Films grown on SrTiO₃ substrates have excellent crystalline quality (XRD), transition temperatureT _c0=81 K and the critical current densityJ _c >2×10⁵ A/cm² for unpatterned films at 77 K. On silicon substrates using buffer layers thein situ deposited YBCO films shows a higher transition width andT _c0 is also slightly less (71 K).     

Special features in the synthesis and properties of thin Y-Ba-Cu-O high-temperature superconductor films free of secondary phases

Data on the structure and transport properties of thin Y-Ba-Cu-O (YBCO) high-temperature superconductor films obtained by magnetron sputtering of a stoichiometric target in a system with a 90° off-axis geometry are reported. It is shown that the films prepared under these conditions are free of copper-rich secondary phases and are characterized by the surface roughness height below 10 nm. The films possess a perfect structure and exhibit high superconducting properties: c-axis misorientation in microblocks FWHM(005)YBCO=0.4–0.5°; zero-resistance temperature T _co=89 K; critical (pinning) current density j _p=1.5–2 MA/cm² (77 K).     

On the Presence of 1D-Like Stripes in Superconducting Epitaxial La2-xSrxCuO4 thin Films

A large positive magnetoresistance (up to tens of percents) is observed in both underdoped (x < 0.15) and overdoped superconducting La_{2− x}Sr_xCuO₄ (LSCO) epitaxial thin films, at temperatures far above the superconducting critical temperature T _c . In the underdoped regime, this magnetoresistance cannot be described by the Kohler rule and is due to the influence of superconducting fluctuations. On the other hand, in the overdoped regime, the Kohler rule does not seem to be violated. The strong magnetoresistance above T _c can be related to the preformed superconducting pairs existing well above T _c but forming a phase coherent superconducting state below T _c . The observations support the idea of a close relation between the pseudogap and the superconducting gap and provide evidence for the presence of pre-pairs above T _c . Both the observed fluctuations and the observed magnetoresistance are in accordance with the existence of 1D-like stripes. These results are further supported by recent high magnetic field measurements (up to 55 T) of the transverse magnetoconductivity σ _xy, which goes to zero for T→0 K.     

Influence of CeO2-Cap Layer on the Texture and Critical Current Density of YBCO Film

YBa₂Cu₃O₇ (YBCO) thin films have been fabricated on different textured CeO₂-cap layers by pulsed laser deposition (PLD). The texture and critical current density J _c of YBCO thin films have been systematically investigated. Both in-plane and out-of-plane textures of YBCO films and CeO₂-cap films were characterized by X-ray diffraction (XRD). And the critical currents of YBCO films were measured by the conventional four-probe method. It was found that the texture and J _c of YBCO films were largely dependent on the texture of CeO₂-cap layers under the optimized deposition conditions. With increasing the degree of in-plane and out-of-plane texture of CeO₂-cap layers, J _c of YBCO films decreased from 4.23×10⁶ A/cm² to 0.47×10⁶ A/cm². The FWHM values of the omega scan rocking curves of YBCO films decreased from 3.71 to 1.84° and the phi scan rocking curves from 6.68 to 4.91° with improvement of CeO₂-cap layer texture. Our results indicated that the fabrication of high texture quality of CeO₂-cap layer was necessary for the epitaxial growth of high-J _c YBCO films. The high-quality YBCO films which are comparable with those grown on single crystal substrates could be achieved on high textured CeO₂-cap layers buffered metal substrates.     

Effect of post-annealing on thin YBCO films deposited from a nanocrystalline target

Pulsed laser deposition is used to ablate thin superconducting YBCO films on SrTiO ₃ substrates. The most important parameters of thin superconducting films are high critical current density, ability to stand magnetic fields and smoothness of surfaces. Smoothness is important in fabrication of layered structures and for research of basic properties of thin superconducting structures. The target sintered from YBCO nanopowder is a promising material for making films which meet most of the requirements above. Investigations by AFM show that our target has grains about one order of magnitude smaller than usual grain size of commercial targets. At optimal deposition parameters, the oxygen pressure of 0.4 torr in the chamber and the substrate temperature 725°C, films with T _c = 90 K, J _c =8 × 10⁶ A/cm ² (77 K) and RMS surface roughness = 1.5 nm are obtained. Thermal annealing of the deposited films for 18 h at 900°C further increases the value of J _c .     

Effect of PrBa2Cu3O7?x buffer layer thickness on the properties of YBa2Cu3O7?x thin films grown on sapphire by laser ablation

Superconducting YBa₂Cu₃O_7–x (YBCO) thin films were deposited onr-plane A1₂O₃ substrates with PrBa₂Cu₃O_7–x (PBCO) buffer layer by XeCl excimer laser ablation. The thickness of PBCO buffer layer was systematically changed to investigate the superconducting properties of YBCO thin films on sapphire. The structure and surface morphology of the films were characterized by X-ray diffraction and scanning electron microscopy (SEM). Superconducting transition temperatures were varied depending on the buffer layer thickness. Interdiffusion between laser-ablated YBCO thin films and A1₂O₃ substrates had been studied by Auger electron spectroscopy (AES). The results of this study show that diffusion does not occur between the YBCO thin film and the substrate even with 20 Å thick PBCO buffer layer.     

Effects of Sm-doping on Structures and Properties of YBCO Coated Conductors Fabricated by TFA-MOD Process

The Sm-doping YBCO films, Y_1−x Sm _x Ba₂Cu₃O _y and Y₁Sm _x Ba_2−x Cu₃O _y (x=0.1, 0.3), were fabricated on LAO (00l) single-crystal substrates by TFA-MOD process in order to improve the superconducting properties of YBCO films. The XRD analyses indicated that these samples have a strong c-axis texture, but the secondary phase of BaCuO₂ are found from Y₁Sm _x Ba_2−x Cu₃O _y films with Sm³⁺ substitution on Ba²⁺ sites. High quality surface, better in-plane and out-of-plane texture of the Sm-doping films have been obtained compared with that of the undoped YBCO film. The Y_0.9Sm_0.1Ba₂Cu₃O _y films showed the highest value of T _c and J _c in self-field. Superconducting properties of all Sm-doping films are better than those of the pure film. These results strongly suggest that Sm-substitution on Y or Ba sites of YBCO phase is a powerful method to efficiently improve J _c and introduce artificial pinning centers in YBCO films.     

Microstructural study of YBa2Cu3O7/SrTiO3/YBa2Cu3O7 heteroepitaxial trilayer films grown on (100) SrTiO3 substrates

Detailed transmission electron microscopic study has been carried out on heteroepitaxial YBa₂Cu₃O₇/SrTiO₃/YBa₂Cu₃O₇ trilayer thin films grown on (100)SrTiO₃ substrates prepared by DC and RF magnetron sputtering. The microstructural results showed the existence of somea-axis-oriented YBCO grains 20–90 nm wide in thec-axis-oriented YBCO matrix. Some of thea-axis grains in the lower YBCO thin film layer have protruded into the above SrTiO₃ layer, which may cause short circuit between the two YBCO superconducting layers. This is unsuitable for the application of trilayer thin films for microelectronic devices. The defects on the surface of the substrates would also influence the growth quality of the YBCO thin films.     

Mixed State Hall Resistivity in YBCO c-Axis-Oriented Thin Films

Hall voltage measurements on YBCO c-axis-oriented thin films in the mixed state were carried out. The films were grown on MgO substrates utilising evaporation technique followed by relatively low heating temperature. Hall voltage was measured in low magnetic fields perpendicular to the film surface, in which sign reversal near T _c was observed. Relatively large transverse voltage was found to be insensitive to the magnetic field inversion (even Hall effect). This effect is discussed in terms of the vortices guided motion model which is argued to give a reasonable explanation for the even Hall effect in type II superconductors.     

RF susceptibility of magnetron sputtered YBa[]Cu[]O[]−x films

We measured the complex susceptibility of two different quality magnetron sputtered YBa₂Cu₃O_7−x films in RF range. Temperature and static magnetic field dependence of complex magnetic susceptibility is a useful indicator of appearance of phase coherence in the film including fluctuation region above T_c. The characteristics showed a low frequency type behaviour at loss peak and diamagnetic drop at near transition temperature and normal state non-zero susceptibility. One of our samples displayed an enhanced diamagnetism in the normal state close to T_c, which was probably attributed to the combination of the normal skin effect and excess conductivity due to superconductive fluctuations. The low temperature susceptibility was also frequency dependent and qualitatively agreed with the vortex-glass scaling model.     

Transport Properties and Fluctuations in Underdoped GdBa2Cu3O x Thin Films

We have investigated the transport properties, resistivity and Hall effect, in a series of underdoped GdBa ₂ Cu ₃ O _x thin films grown by off-axis magnetron sputtering. We find a systematic correlation between the critical temperature T _c and the inverse Hall constant R _H ^-1 , related, in simple models, to the carrier concentration n. Our experimental thin film T _c (n) data are in good agreement with the temperature-doping phase diagram obtained for YBa ₂ Cu ₃ O _x single crystals. By measuring the activation energies in the liquid vortex phase, and by using a 2-dimensional model for vortex dynamics, we have extracted the penetration depth of these samples, and studied the relation between the carrier concentration and the superfluid density to probe the role of phase fluctuations on superconductivity.     

Doping and Isotope Dependence of the Pseudogap in High-Tc Cuprates Observed by Neutron Crystal-Field Spectroscopy: A Fast Local Probe

The temperature dependence of the relaxation rate of crystal-field excitations in the high-T _c superconductors HoBa₂Cu₄O₈ and HoBa₂Cu₃O _x (6.4 < x < 7) was investigated by inelastic neutron scattering techniques. The data show clear evidence for the opening of an electronic gap in the normal state at T* > T _c in the underdoped regime as well as for slightly overdoped samples. For HoBa₂Cu₄O₈ T* increases from 170 to 220 K upon oxygen isotope substitution (¹⁶O vs ¹⁸O). This huge isotope shift (which is absent in NMR and NQR experiments) suggests that the mechanism leading to an isotope effect on the pseudogap has to involve a time scale in the range 10^–8 > 10^–13 s.     

Superconducting behavior of high-Tc YBa2Cu3O7 thin films with BaO impurity produced by pulsed laser deposition

We have investigated the superconducting behavior of high-T _c YBa₂Cu₃O₇ (YBCO) thin films containing BaO impure phase produced by pulsed laser deposition. The thin films were characterized by the standard four-probe method, X-ray diffraction (XRD), and scanning electron microscopy (SEM). XRD showed that all these thin films contained BaO impurity, with thec-axis normal to the surface of the substrates. The presence of impurity existed from substrate temperatureT _s of 727 to 796°C. When these thin films with BaO impurity were measured under the magnetic fields, it was found that the critical current densityJ _c increased slightly with increase in magnetic fieldB within the range ofB500 G, in the case ofB perpendicular to thec-axis of the film.