Stress-induced shifting of the morphotropic phase boundary in sol-gel derived Pb(Zr0.5Ti0.5)O3 thin films

The structure evolution of Pb(Zr_0.5Ti_0.5)O₃ thin films with different thicknesses on the Pt(1 1 1)/Ti/SiO₂/Si substrates has been investigated using X-ray diffraction and Raman scattering. Differing from Pb(Zr_0.5Ti_0.5)O₃ bulk ceramic with a tetragonal phase, our results indicate that for PZT thin films with the same composition monoclinic phase with Cm space group coexisting with tetragonal phase can appear. It is suggested that tensile stress plays a role in shifting the morphotropic phase boundary to titanium-rich region in PZT thin films. The deteriorated ferroelectric properties of PZT thin films can be attributed mainly to the presence of thin non-ferroelectric layer and large tensile stress.     

Microstructure and electrical properties of Ba0.7Sr0.3(Ti1 − xZrx)O3 thin films prepared on copper foils with sol-gel method

Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0, 0.1, 0.2) (BSZT) thin films have been prepared on copper foils using sol-gel method. The films were annealed in an atmosphere with low oxygen pressure so that the substrate oxidation was avoided and the formation of the perovskite phase was allowed. The X-ray diffraction results show a stable polycrystalline perovskite phase, with the diffraction peaks of the BSZT films shifting toward the smaller 2θ with increasing Zr content. Scanning electron microscopy images show that the grain size of the BSZT thin films decreases with increasing Zr content. High resolution transmission electron microscopy shows the clear lattice and domain structure in the film. The dielectric peaks of the BSZT thin films broaden with increasing Zr content. Leakage current density of Ba_0.7Sr_0.3(Ti_1 − xZr_x)O₃ (x = 0.1) thin film is the lowest over the whole applied voltage.     

Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer layer

Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ antiferroelectric thin films with thickness of 500 nm were successfully deposited on TiO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) and Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates via sol-gel process. Microstructure of Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance-voltage behaviors of the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ films with and without TiO₂ buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (T_c) was 193 °C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb_0.97La_0.02(Zr_0.95Ti_0.05)O₃ films was detected by current density-electric field measurement.     

Structural characterization, thermal, spectroscopic and magnetic studies of the (C3H12N2)0.75[Mn1.50Fe1.50(AsO4)F6] and (C3H12N2)0.75[Co1.50Fe1.50(AsO4)F6] compounds

The (C₃H₁₂N₂)_0.94[Mn_1.50Fe_1.50^III(AsO₄)F₆] and (C₃H₁₂N₂)_0.75[Co_1.50Fe_1.50^III(AsO₄)F₆] compounds 1 and 2 have been synthesized using mild hydrothermal conditions. These phases are isostructural with (C₃H₁₂N₂)_0.75[Fe_1.5^IIFe_1.5^III(AsO₄)F₆]. The compounds crystallize in the orthorhombic Imam space group. The unit cell parameters calculated by using the patterns matching routine of the FULPROOF program, starting from the cell parameters of the iron(II),(III) phase, are: a = 7.727(1) Å, b = 11.047(1) Å, c = 13.412(1) Å for 1 and a = 7.560(1) Å, b = 11.012(1) Å, c = 13.206(1) Å for 2, being Z = 8 in both compounds. The crystal structure consists of a three-dimensional framework constructed from edge-sharing [M^II(1)₂O₂F₈] (M = Mn, Co) dimeric octahedra linked to [Fe^III(2)O₂F₄] octahedra through the F(1) anions and to the [AsO₄] tetrahedra by the O(1) vertex. This network gives rise two kinds of chains, which are extended in perpendicular directions. Chain 1 is extended along the a-axis and chain 2 runs along the c-axis. These chains are linked by the F(1) and O(1) atoms and establish cavities delimited by eight or six polyhedra along the [1 0 0] and [0 0 1] directions, respectively. The propanediammonium cations are located inside these cavities. The thermal study indicates that the structures collapse with the calcination of the organic dication at 255 and 285 °C for 1 and 2, respectively. The Mössbauer spectra in the paramagnetic state indicate the existence of two crystallographically independent positions for the iron(III) cations and a small proportion of this cation in the positions of the divalent Mn(II) and Co(II) ones. The IR spectrum shows the protonated bands of the H₂N- groups of the propanediamine molecule and the characteristic bands of the [AsO₄]³⁻ arsenate oxoanions. In the diffuse reflectance spectra, it can be observed the bands characteristic of trivalent iron(III) cation and divalent Mn(II) and Co(II) ones in a distorted octahedral symmetry. The calculated Dq and B-Racah parameters for the cobalt(II) phase are 710 and 925 cm⁻¹, respectively. The ESR spectra of compound 1 maintain isotropic with variation in temperature, being g = 1.99. Magnetic measurements for both compounds indicate that the main magnetic interactions are antiferromagnetic in nature. However, at low temperatures small ferromagnetic components are detected, which are probably due to a spin decompensation of the two different metallic cations. The hysteresis loops give values of the remnant magnetization and coercive field of 84.5, 255 emu/mol and 0.01, 0.225 T for phases 1 and 2, respectively.     

Large electrocaloric effect of highly (100)-oriented 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin films with a Pb(Zr0.3Ti0.7)O3/PbOx buffer layer

0.68PbMg_1/3Nb_2/3O₃-0.32PbTiO₃ (PMN-PT) thin films with a lead zirconate titanate Pb(Zr_0.3Ti_0.7)O₃ (PZT)/PbO_x buffer layer were deposited on Pt/TiO₂/SiO₂/Si substrates by radio frequency magnetron sputtering technique, and pure perovskite crystalline phase with highly (100)-preferred orientation was formed in the ferroelectric films. We found that the highly (100)-oriented thin films possess not only excellent dielectric and ferroelectric properties but also a large electrocaloric effect (13.4 K at 15 V, i.e., 0.89 K/V) which is attributed to the large electric field-induced polarization and entropy change during the ferroelectric-paraelectric phase transition. The experimental results indicate that the use of PZT/PbO_x buffer layer can induce the crystal orientation and phase purity of the PMN-PT thin films, and consequently enhance their electrical properties.     

Transformation of Dion-Jacobson phase to Aurivillius phase: synthesis of (PbBiO2)MNb2O7 (M = La, Bi)

We describe transformations of the Dion-Jacobson (D-J) phases, KLaNb₂O₇ and RbBiNb₂O₇, to the Aurivillius (A) phases, (PbBiO₂)LaNb₂O₇ (1) and (PbBiO₂)BiNb₂O₇ (2), in a metathesis reaction with PbBiO₂Cl. Oxide 1 adopts centrosymmetric tetragonal structure (a = 3.905(1) Å, c = 25.66(1) Å), whereas oxide 2 crystallizes in a noncentrosymmetric orthorhombic (A2₁am) (a = 5.489(1) Å, b = 5.496(2) Å, c = 25.53(1) Å) structure. Oxide 2 shows a distinct SHG response towards 1064 nm laser radiation. The role of La³⁺ versus Bi³⁺ in the perovskite slabs for the occurrence of noncentrosymmetric structure/ferroic property in these materials is pointed out.     

Structure, dielectric, ferroelectric, and optical properties of (1 − x)Ba(Zr0.2Ti0.8)O3 − x(Ba0.7Ca0.3)TiO3 thin films prepared by sol-gel method

We report high dielectric tunabilities of (1 − x)Ba(Zr_0.2Ti_0.8)O₃ − x(Ba_0.7Ca_0.3)TiO₃ (BZT-xBCT) (x = 0.15, 0.30, 0.40, 0.45, 0.50, and 0.55) thin films prepared by a sol-gel method. The films show a pure perovskite structure with random orientation. They have moderate dielectric constant ranging from 350 to 500 and low dielectric loss near 3.0% at 1 kHz with 0 V bias at room temperature. The dielectric tunability of the BZT-0.55BCT thin films is up to 65% at 400 kV/cm and 100 kHz. The films exhibit a high optical transmission in the range of 420 nm-1500 nm. Their optical band gap energies are about 3.90 eV.     

Ferroelectric and pyroelectric properties of (Na0.5Bi0.5)TiO3-BaTiO3 based trilayered thin films

Trilayered Bi_3.25La_0.75Ti₃O₁₂ (25 nm)/(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ (300 nm)/Bi_3.25La_0.75Ti₃O₁₂ (25 nm) and Pb(Zr_0.4Ti_0.6)O₃ (25 nm)/(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ (300 nm)/Pb(Zr_0.4Ti_0.6)O₃ (25 nm) thin films without undesirable phases have been deposited on Pt/Ti/SiO₂/Si substrates. It was found that the Bi_3.25La_0.75Ti₃O₁₂ and Pb(Zr_0.4Ti_0.6)O₃ layers are very effective to inhibit the charge transport in the trilayered films. Much better insulating properties than those of (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ films have been achieved in the trilayered films. The trilayered films show good dielectric, ferroelectric and pyroelectric properties. Remnant polarizations 2P_r of 16 µC/cm² and 34 µC/cm², pyroelectric coefficients of 4.8 × 10^− 4 C m^− 2 K^− 1 and 7.0 × 10^− 4 C m^− 2 K^− 1 have been obtained for the Bi_3.25La_0.75Ti₃O₁₂/(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃/Bi_3.25La_0.75Ti₃O₁₂ and Pb(Zr_0.4Ti_0.6)O₃/(Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃/Pb(Zr_0.4Ti_0.6)O₃ thin films, respectively. The trilayered films are promising candidates for sensor and actuator applications.     

Asymmetric switching behavior of Ni/Pb1.1(Zr0.3Ti0.7)O3/Pt thin films

An asymmetric behavior of P–E response was observed in Ni/Pb_1.1(Zr_0.3Ti_0.7)O₃/Pt multilayer thin films where Ni was used as top electrode. This interesting phenomenon was investigated by comparative analysis of the hysteresis loops and dynamic pyroelectric responses. The PZT thin films were prepared under the same conditions but different Ni and Pt top electrodes were used in the hysteresis loop measurement, and the Pt was used as the common bottom electrode. It is believed that this asymmetric behavior in hysteresis loop is originated from the strong domain pinning near the top Ni electrode. Dynamic pyroelectric response to 633 nm radiation of the Ni/Pb_1.1(Zr_0.3Ti_0.7)O₃/Pt thin films with polarization up and down was carried out. Higher dynamic pyroelectric response was observed in the positively poled film, in which the direction of the polarization was from the top to bottom electrode. It provides further evidence that the domain pinning near the top electrode dominates the asymmetric switching behavior.     

Synthesis, structure and magnetic properties of a new iron phosphonate-oxalate with 3D framework: [Fe(O3PCH3)(C2O4)0.5(H2O)]

A new iron phosphonate-oxalate [Fe(O₃PCH₃)(C₂O₄)_0.5(H₂O)] (1), has been synthesized under hydrothermal condition. The single-crystal X-ray diffraction studies reveal that 1 consists of layers of vertex-linked FeO₆ octahedra and O₃PC tetrahedra, which are further connected by bis-chelate oxalate bridges, giving to a 3D structure with 10-membered channels. Crystal data: monoclinic, P2₁/n (no. 14), a = 4.851(2) Å, b = 16.803(7) Å, c = 7.941(4) Å, β = 107.516(6)°, V = 617.2(5) Å³, Z = 4, R₁ = 0.0337 and wR₂=0.0874 for 1251 reflections [I > 2σ(I)]. Mössbauer spectroscopy measurement confirms the existence of high-spin Fe(III) in 1. Magnetic studies show that 1 exhibits weak ferromagnetism with T_N = 30 K due to a weak spin canting.     

Ion exchange and electrochemical evaluation of the microporous phosphate Li9Fe7(PO4)10

A new lithium iron(III) phosphate, Li₉Fe₇(PO₄)₁₀, has been synthesized and is currently under electrochemical evaluation as an anode material for rechargeable lithium-ion battery applications. The sample was prepared via the ion exchange reaction of Cs₅K₄Fe₇(PO₄)₁₀1 in the 1 M LiNO₃ solution under hydrothermal conditions at 200 °C. The fully Li⁺-exchanged sample Li₉Fe₇(PO₄)₁₀2 cannot yet be synthesized by conventional high-temperature, solid-state methods. The parent compound 1 is a member of the Cs_9−xK_xFe₇(PO₄)₁₀ series that was previously isolated from a high-temperature (750 °C) reaction employing the eutectic CsCl/KCl molten salt. The polycrystalline solid 1 was first prepared in a stoichiometric reaction via conventional solid-state method then followed by ion exchange giving rise to 2. Both compounds adopt three-dimensional structures that consist of orthogonally interconnected channels where electropositive ions reside. It has been demonstrated that the Cs_9−xK_xFe₇(PO₄)₁₀ series possesses versatile ion exchange capabilities with all the monovalent alkali metal and silver cations due to its facile pathways for ion transport. 1 and 2 were subject to electrochemical analysis and preliminary results suggest that the latter can be considered as an anode material. Electrochemical results indicate that Li₉Fe₇(PO₄)₁₀ is reduced below 1 V (vs. Li) to most likely form a Fe(0)/Li₃PO₄ composite material, which can subsequently be cycled reversibly at relatively low potential. An initial capacity of 250 mAh/g was measured, which is equivalent to the insertion of thirteen Li atoms per Li_9+xFe₇(PO₄)₁₀ (x = 13) during the charge/discharge process (Fe²⁺ + 2e → Fe⁰). Furthermore, 2 shows a lower reduction potential (0.9 V), by approximately 200 mV, and much better electrochemical reversibility than iron(III) phosphate, FePO₄, highlighting the value of improving the ionic conductivity of the sample.     

Microstructure and texture development in single layered and heterolayered PZT thin films

Single-layered Pb(Zr_0.7Ti_0.3)O₃ and Pb(Zr_0.3Ti_0.7)O₃ thin films and heterolayered Pb(Zr_1−x Ti _x )O₃ thin films consisting of alternating Pb(Zr_0.7Ti_0.3)O₃ and Pb(Zr_0.3Ti_0.7)O₃ layers were studied for their microstructure and texture development. The texture in the single-layered PZT films is affected by the Zr/Ti ratio as they have different crystallization behavior depending on the Zr/Ti ratio. With increasing film thickness, the average grain size of Pb(Zr_1−x Ti _x )O₃ increases. An unusually large grain size of 1–3 μm together with a strong (001)/(100) preferred orientation were observed for the heterolayered PZ₇₀T₃₀, whereby Pb(Zr_0.7Ti_0.3)O₃ was used as the seeding layer, for film as thin as 150 nm. The film microstructure is refined drastically when the stacking sequence is changed, i.e., when Pb(Zr_0.3Ti_0.7)O₃ is employed as the seeding layer. Thermal treatment of the PZ₇₀T₃₀ seeding layer also plays an important function in the microstructure development of the heterolayered PZ₇₀T₃₀ film. The formation of the large-grained film is correlated to the lowered nucleation energy of crystallizing Pb(Zr_0.7Ti_0.3)O₃ by the top Pb(Zr_0.3Ti_0.7)O₃. The Pb(Zr_0.3Ti_0.7)O₃ layer facilitated the nucleation and crystallization of the Pb(Zr_0.7Ti_0.3)O₃ amorphous seeding layer, whereby the overall microstructure of the heterolayered thin film was dictated by the Pb(Zr_0.7Ti_0.3)O₃ seeding layer leading to the growth of larger PZT grains.     

Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrazido (2) tungsten complex (CH3CN)Cl4W(NNMe2)

Tungsten nitride carbide (WN_xC_y) thin films were deposited by chemical vapor deposition using the dimethylhydrazido (2⁻) tungsten complex (CH₃CN)Cl₄W(NNMe₂) (1) in benzonitrile with H₂ as a co-reactant in the temperature range 300 to 700 °C. Films were characterized using X-ray diffraction (XRD), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy and four-point probe to determine film crystallinity, composition, atomic bonding, and electrical resistivity, respectively. The lowest temperature at which growth was observed from 1 was 300 °C. For deposition between 300 and 650 °C, AES measurements indicated the presence of W, C, N, and O in the deposited film. The films deposited below 550 °C were amorphous, while those deposited at and above 550 °C were nano-crystalline (average grain size < 70 Å). The films exhibited their lowest resistivity of 840 µΩ-cm for deposition at 300 °C. WN_xC_y films were tested for diffusion barrier quality by sputter coating the film with Cu, annealing the Cu/WN_xC_y/Si stack in vacuum, and performing AES depth profile and XRD measurement to detect evidence of copper diffusion. Films deposited at 350 and 400 °C (50 and 60 nm thickness, respectively) were able to prevent bulk Cu transport after vacuum annealing at 500 °C for 30 min.     

Pb(Zr0.52Ti0.48)O3/TiNi multilayered heterostructures on Si substrates for smart systems

Ferroelectric/shape memory alloy thin film multilayered heterostructures possess both sensing and actuating functions and are considered to be smart. In this article, Pb(Zr_0.52Ti_0.48)O₃ (PZT) ferroelectric thin films and Ti-riched TiNi shape memory alloy thin films have been deposited on Si and SiO₂/Si substrates in the 400-600 °C temperature range by pulsed laser deposition technique. Deposition processing, microstructure and surface morphology of these films are described. The TiNi films deposited at 500 °C had an austenitic B2 structure with preferred (110) orientation. The surfaces of the films were very smooth with the root-mean-square roughness on a unit cell level. The structure of the TiNi films had a significant influence on that of the subsequently deposited PZT films. The single B2 austenite phase of the TiNi favored the growth of perovskite PZT films. The PZT/TiNi heterostructures with the PZT and TiNi films respectively deposited at 600 and 500 °C exhibited a polarization-electric field hysteresis behavior with a leakage current of about 2 × 10^− 6 A/cm².     

Near-infrared luminescent polymer thin films containing Yb(III) complex and photosensitized dye

Polymethylmethacrylate (PMMA) thin films containing Yb(pms)₃(H₂O)₈ (pms: bis(perfluoromethanesulfonyl)imide) and dipyridophenazine with DMSO and DMSO-d₆ were fabricated on the glass substrates. The films show photosensitized near-IR luminescence under UV light irradiation of 370 nm in wavelength. The emission quantum yields of Yb(III) complex in PMMA (film 1), PMMA containing DMSO (film 2), and PMMA containing DMSO-d₆ (film 3) thin films are 0.18, 0.26, and 0.26%, respectively. The emission quantum yields of films 1 and 2 were considerably enhanced after the annealing at 80 °C.     

Determination of the modulated structure of the misfit layer compound (LaS)1.196VS2

Single crystal X-ray diffraction was used to determine the modulated structure of the misfit layer compound (LaS)_1.196VS₂. This compound crystallizes in the triclinic system with cell parameters: a_s = 3.410 (1) Å, b_s = 5.845(1) Å, c_s = 11.191(2) Å, α ≈ 95.15(4), β ≈ 84.79(2)°, and γ ≈ 89.98(2)°, q = 0.5978(4)a_s^* − 0.002(1)b_s^* + 0.004(2)c_s^*, and V_s = 221.2(1) Å³. A (3 + 1)D superspace group, X(α,β,γ), was used to analyze the complete structure (X is referring to a pseudo C centering). The largest modulation amplitudes are observed for La-S (between La (subsystem 2) and S (subsystem 1)), as well as V-V distances. In connection with the large V-V modulation, we observed the formation of “linear vanadium clusters” that may impact on the transport properties.     

Microstructure, electrical and optical characteristics of Mg(Zr0.05Ti0.95)O3 thin films grown on Si substrate by sol-gel method

Optical properties and microstructures of Mg(Zr_0.05Ti_0.95)O₃ thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as annealing temperature (600-800 °C). The optical transmittance spectra of the Mg(Zr_0.05Ti_0.95)O₃ thin films were measured by using UV-visible recording spectro-photometer. The diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr_0.05Ti_0.95)O₃ peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.     

The effect of solution chemistry on the preparation of MgAl2O4 by hydrothermal-assisted sol-gel processing

Preparation of magnesium aluminate spinel powder by hydrothermal-assisted sol-gel processing from MgAl₂(OCH₂CH₂OR)₈, RCH₃ (1), CH₂CH₂OCH₃ (2), MgAl₂[OCH(CH₃)₂]₈ (3) and MgAl₂(O-^sBu)₈ (4) in toluene and parent alcohol has been investigated. Coordination status of aluminum atom in precursors was determined by ²⁷Al NMR and correlation between coordination number of aluminum and development of spinel phase in hydrothermal-assisted sol-gel processing has been studied. The gels obtained from hydrothermal-assisted hydrolysis of magnesium-aluminum alkoxides that contain six-coordinated aluminum atoms in solution (1 and 2) after calcination at 700 °C resulted in the formation of pure spinel phase, whereas in similar hydrolysis and calcination processes of precursors that contain four-coordinated aluminum (3 and 4) spinel phase forms along with some Al₂O₃ and MgO. Selected powders obtained from hydrothermal-assisted sol-gel processing were characterized by thermal analysis (TGA/DSC), X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). Results indicate that the coordination status of aluminum in the precursor is very crucial for the formation of pure phase spinel. The morphology of prepared spinels was studied by SEM and the results showed that the solvent in hydrothermal-assisted sol-gel processing has a marked effect on the morphology of the resulting MgAl₂O₄. In hydrothermal-assisted sol-gel processing of aluminum-magnesium alkoxides in hydrophobic solvent, spherical particles are formed, while in the parent alcohol, non-spherical powders are formed.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Hydrothermal temperature effect on magnetoelectric coupling of Ni/Pb(Zr0.52Ti0.48)O3 bilayers

Magnetoelectric (ME) Ni/Pb(Zr_0.52Ti_0.48)O₃ bilayers have been prepared by hydrothermal method. The structure and ferroelectric properties of the Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films prepared at various hydrothermal temperatures are characterized by X-ray diffraction and ferroelectric testing. With the hydrothermal temperature increasing the grain size of the PZT thin films gradually decreases leading to a gradual increase of the coercive field and a decrease of the remnant polarization of the Ni/PZT bilayers. The ME voltage coefficient of the Ni/PZT bilayers gradually decreases as hydrothermal temperature increases. The large ME coefficient makes these Ni/PZT bilayers possible for applications in multifunctional devices such as electromagnetic sensor, transducers and microwave devices.