大分子光引发剂及固化时间对PDLC膜光电性能的影响

聚合物分散液晶膜(PDLC)是将液晶和聚合物混合得到的一种综合性能优异的膜材料.聚合物作为成膜材料,其固化过程是影响聚合物分散液晶膜电光特性的重要因素.实验采用原子转移自由基聚合法制备活性大分子引发剂,引发可聚合单体进行聚合,通过光引发聚合诱导相分离法制备PDLC膜.研究表明:采用该方法可以极大地改善PDLC的光电性能,并且通过改变固化时间可以调节PDLC的各项光电性能,随着固化时间的增加,PDLC阈值电压(Vth)、饱和电压(Vsat)都随之增加,膜关态透光率(TOFF)、开态透光率(TON)随之降低.     

聚合物分散液晶盒的相分离和电光特性(英文)

通过改变液晶的含量、固化温度以及紫外光强度研究了聚合物分散液晶(PDLC)盒的相分离。混合紫外光固化的聚合物基质和具有正介电各向异性的向列相液晶,并将混合物注入到以ITO玻璃为衬底的液晶盒中。然后,照射紫外光产生分离制成PDLC膜。在紫外光照射液晶盒期间,测量了盒的电光特性与时间的依赖关系。利用激光衍射粒子尺寸分析仪,无破坏地测量了微滴尺寸及其分布与紫外光强的依赖关系。开始照射紫外光之后的某一特定期间,透过光强急剧下降,同时阻抗增大,电容开始增大然后下降。测量了紫外光强与PDLC盒电光特性的依赖关系并对其进行了讨论。     

PDLC的电光特性及其显示特性改善的实验研究

本文在综述聚合物分散液晶(PDLC)显示特性的基础上,研究了外界条件(如温度、紫外光强等)对液晶和预聚物混合的相分离结构,以及相分肉结构对PDLC电光特性的影响。从能导致PDLC的慢响应、光透过率迟滞现象的机理出发,通过实验的方法使这一特性得到了改善。     

聚合物结构对PDLC性能的影响

用光聚合诱导相分离法制备了3种不同聚合物基体的聚合物分散液晶(PDLC)膜,研究了液晶含量和固化时间对PDLC透光率及膜形态的影响,考察了不同聚合物基体对PDLC电光性能的影响。结果表明,聚合物单体反应活性越高,达到关态下最低透过率所需的固化时间越短,丙烯酸仅需10 s,而甲基丙烯酸甲酯却需360 s;聚合物与液晶颗粒之间的相互作用越强,PDLC膜的阈值电压越高,丙烯酸的阈值电压至少是其他两者的5倍。     

光调控的偶氮染料掺杂聚合物分散液晶微管随机激光器（英文）

为了优化液晶类微管激光器的性能,本文研究了偶氮染料掺杂聚合物分散液晶微管激光器出射激光的性能及光控性。通过在不同纤芯直径的玻璃毛细管中制备掺杂偶氮染料的PDLC,并分别测量这些样品的随机激光阈值。增加紫外线照射强度,测量随机激光的光谱。实验结果表明,不同芯径毛细管样品(100μm,300μm,500μm)的随机激光阈值测量为11.8μJ/脉冲,8.6μJ/脉冲和13.2μJ/脉冲。实验结果还表明,随着紫外线照射强度的增加(从0mW/cm2增加到150mW/cm~2),随机激光强度逐渐减小,光谱的半高宽变宽。随机激光在光学调谐过程中在不同偏振方向的紫外光束下显示出相似的特性。该工作验证了在圆柱形约束结构中制造微型激光器件的可能性,并扩展了PDLC的应用范围。     

低阈值电压聚合物分散性液晶膜的电光特性

采用聚合物诱导柏分离(PIPS)方法制备了PDLC膜,研究了不同单体材料、温度、光强等对PDLC膜电光特性的影响.发现Bi-EMA-2和EHMA混合单体(质量组分为1:9)与液晶C70/02CN在折射率方面匹配较好,且在偏光显微镜下液晶微滴与聚合物单体的晶相边界清晰,易制备成对比度较高、阈值电压和饱和驱动电压较低的PDLC膜.温度和光强是控制和维持液晶与单体之间相分离速度平衡的重要工艺因素,直接影响到相分离过程中的液晶微滴形貌尺寸及其分布均一性,进而影响PDLC膜电光性能的优劣.通过工艺条件的优化,最终制备出了阈值电压为0.18 V/μm、饱和驱动电压为0.4 V/μm的PDLC膜.     

低阈值高对比度PDLC薄膜的制备

采用PIPS法制备聚合物分散液晶(PDLC)薄膜,通过在液晶/预聚物复合体系中添加甲基丙烯酸丁酯调控聚合物与液晶微滴界面的锚定能,以改善PDLC的电光特性。研究了甲基丙烯酸丁酯含量对PDLC膜的偏光显微镜下形貌、光电性能的影响,最后优化工艺参数,制备出低阈值、高对比度的PDLC薄膜。实验结果表明,适量加入甲基丙烯酸丁酯有利于降低阈值电压和饱和驱动电压。另外,还研究了PDLC薄膜的电光特性与驱动电压频率的关系,发现PDLC的阈值电压和饱和驱动电压均随着频率的升高而增大,同时电光曲线趋于平缓。     

低玻璃化温度大分子RAFT-PBA对PDLC形貌的影响

聚合物分散液晶(PDLC)的形貌对其电光性能有着极其重要的影响,通过控制固化条件实现对PDLC形貌的调控有着重要的实用价值.采用可逆加成-断裂链转移自由基(RAFT)聚合法制备了PDLC,研究了低玻璃化转变温度的大分子RAFT试剂聚丙烯酸丁酯(RAFT-PBA)含量和固化时间对PDLC形貌及关态透光率的影响.结果表明,随着固化时间的延长,PDLC关态透光率降低,最后趋于不变.液晶微滴尺寸随RAFT-PBA含量增加而逐渐增大,当其含量为15%时,PDLC的关态透光率最低.     

基于应变液晶技术制备反式电控调光玻璃的研究

基于应变液晶原理,在聚合物分散负性液晶紫外光固化相分离过程中采用二次曝光技术,进行第二次曝光时施加了垂面拉伸应力,制备出应力诱导垂面定向聚合物分散负性液晶反式电控调光玻璃样品。样品既具有反式压光效应调光玻璃功能,又具有反式电控调光玻璃功能。处于半透明态时,透光率接近30%;施加压力或电场后变散射雾态,雾度90%以上。反式电控调光玻璃研究是调光玻璃领域难题,采用应变液晶技术制备反式电控调光玻璃对液晶电光器件的研究和应用具有重要意义。     

大分子引发剂的分子量对聚合物分散液晶的微观形貌影响

采用可逆加成-断裂链转移(RAFT)活性自由基聚合法制备了不同分子量的苯乙烯大分子引发剂(RAFT-PS),并通过紫外光聚合诱导相分离法制备聚合物分散液晶(PDLC)膜。研究了不同分子量的RAFT-PS对PDLC的微观形貌、光聚合动力学、液晶向列取向程度以及电光性能等方面的影响。研究表明,影响PDLC的微观形貌的关键因素是RAFT-PS的分子量,而不是聚合物基体分子量。通过调整RAFT-PS的分子量,能够有效控制液晶微滴粒径,进而改善PDLC的电光性能。     

聚合物分散型液晶结构紫外光稳定性分析

聚合物分散型液晶组件技术是市面上常用的散射式光开关系统,且常常应用于具隐私保护性之电控切换窗户中。然而对于室外的应用,属于有机高分子材料的液晶材料与聚合物结构对于照射紫外光之稳定性与耐受性值得被讨论,尤其是较少被讨论之高分子聚合物结构的影响。本研究主要探讨不同聚合物结构之聚合物分散型液晶组件在紫外光照射下光电特性的变化,期待可以了解聚合物结构特性随曝光时间的变化并提出适当之改善方法。本实验藉由选择具有高紫外光稳定性之主体液晶搭配紫外固化胶调配聚合物分散型液晶预聚物,分别探讨不同固化胶比例与光强度等固化条件下,组件照射紫外光后对于光电特性造成的影响,以此了解各种聚合物形貌照射紫外光后之光电特性变化。实验结果显示,照射紫外光后,各种聚合物分散型液晶组件之临界电压仅仅些微提升,但下降时间剧烈地提高,以聚合物比例35%、固化强度2mW/cm~2为例,临界电压从15.57V些微提升至18.18V,下降时间从195.12ms大幅提升至925.26ms。此外,本研究亦发现相对于照射前,照射紫外光后之组件的下降时间对于电压施加时间长短相当敏感,且此现象可藉由调整固化光强度与固化胶浓度有抑制之趋势。本研究呈现了各种聚合物分散型液晶组件在照射紫外光后光电特性的变化,并了解聚合物结构的特性变化的影响。     

一种反型PNLC电光特性曲线的研究

采用紫外光聚合分离法使混合体系(可光聚合单体/液晶/光引发剂)产生相分离,制备了以双官能团丙烯酸酯为基体的反型聚合物网络液晶膜材料。采用液晶光电测试仪测试了光引发剂1-羟基环己基苯甲酮(IRG184)浓度和不同种类液晶盒如平行盒和反平行盒对反型PNLC液晶膜的电光性能的影响。研究结果表明,当光引发剂IRG184浓度为0.2%时,采用双官能团丙烯单体材料作为可光聚合单体,选择光学各向异性和介电各向异性适当的向列相液晶D5,混合搅拌均匀以后灌注于盒厚7μm的反平行排列液晶盒中,在光强为18mW/cm2、波长主要为365nm的紫外光下,温度控制在25~30℃使其聚合,所得反型PNLC膜的电光特性曲线最佳,如阈值电压、工作电压等特性最好,并对研究结果进行了相关的讨论。     

Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heteroj unction photovoltaic solar cells

The efficiency and radiation resistance of solar cells are graded.They are then fabricated in the form of n-CdeSe（In）/p-Si heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a p-Si single crystal wafer with a thickness of 100μm and a resistivity of～1.5Ω·cm at a temperature of 473 K.The short-circuit current density(j_sc),open-circuit voltage(V_oc),fill factor（ff） and conversion efficiency（η） under 100 mW/cm²（AMI） intensity,are 20 mA/cm²,0.49 V,0.71 and 6%respectively. The cells were exposed to different electron doses（electron beam accelerator of energy 1.5 MeV,and beam intensity 25 mA）.The cell performance parameters are measured and discussed before and after gamma and electron beam irradiation.     

各向异性PDLC散射膜的特性研究

采用摩擦表面取向层的方法制备了有光学各向异性结构的ＰＤＬＣ膜。研究了液晶盒的厚度、摩擦强度,以及在紫外光诱导相分离过程中的光照强度对ＰＤＬＣ膜的光学各向异性程度和电光特性的影响。对ＰＤＬＣ的光学各向异性进行了研究,并给出了要获得低阈值电压、高各向异性的聚合物分散液晶各向异性膜的盒厚、摩擦强度以及光照度等条件。被取向后的ＰＤＬＣ各向异性膜可被用来作为具有很好光电特性的电可调散射式偏振片。     

Experimental studies of proton-implanted GaAs-AlGaAsmultiple-quantum-well modulators for low-photocurrent applications

We describe the first attempts to control photocurrent, and thus power dissipation, in surface-normal multiple-quantum-well (MQW) modulators. We have made detailed experimental studies of proton-implanted p-i-n GaAs-Al_xGa_1-xAs MQW modulators having barrier layers of x=0.3, 0.45, and 1.0. Structures were implanted to levels of 1×10¹² cm^-2, 1×10¹³ cm^-2, and 1×10¹⁴ cm ^-2. Photocurrent progressively decreased with increasing implant-dose and barrier mole fraction (x). Exciton linewidths showed a strong voltage and implant dose dependence, demonstrating a tradeoff between photocurrent and modulation performance. We obtained our best results with x=1.0 barriers. For example, 1×10¹³ cm^-2-implanted asymmetric Fabry-Perot modulators were realized in which the optical performance was similar to that of unimplanted devices. The photocurrent responsivity was, however, only 0.007 A/W at 12.5 V bias. We report measurements of carrier lifetime in these materials that show the reduction in photocurrent arises from a reduction in lifetime due to implant-induced damage. In addition, the reduced lifetime decreases the optically-excited quantum-well carrier population, leading to an increase in cw saturation intensity. Specifically, 1×10¹³ cm^-2-implanted devices with x=1.0 have a saturation intensity of roughly 45 kW/cm², while unimplanted devices have 3.5 kW/cm². Asymmetric self electro-optic effect devices (A-SEED's) are demonstrated, and power dissipation issues associated with the use of low-photocurrent modulators in integrated systems are discussed     

Ion-dosage-dependent room-temperature hysteresis in MOS structureswith thin oxides

Two sets of metal-oxide-silicon (MOS) structures with oxide thicknesses of 115 and 350 Å, respectively, were exposed to 16-keV Si ion beams after dry oxidation. Small-signal capacitance-voltage measurements at room temperature revealed a hysteresis effect in the ion exposed samples, whose magnitude and direction depended on the ion dosage. No hysteresis could be detected in the control (unimplanted) samples. Mobile charge species in the oxide dominated the hysteresis effect for dosages below 10¹³/cm². Around this dosage, electron trapping/detrapping at the Si-SiO₂ interface began to take place. From the rate of the parallel voltage shifts of the C-V characteristics with respect to time, electron trapping and the mobile oxide charge transfer from the silicon/oxide to the aluminum/oxide interface were found to be faster than electron detrapping and the mobile oxide charge transfer form the oxide/Al to the Si-SiO₂ interface. With increasing dosage, the magnitude of the hysteresis came down and reversed its sign as the dosage approached 10¹³/cm². Experimental results suggest immobilization of the mobile oxide charge by lattice disorder induced by the energetic ions, and generation of oxide electron traps in the vicinity of the silicon/oxide interface after the lattice damage becomes heavy     

光配向PI固烤时间与曝光能量对LCD光学及残影的影响

采用光配向技术使PI获得配向能力并制得IPS型LCD,通过AOI光学自动检测设备以及DMS光学测量系统对在不同PI固烤时间和UV曝光能量下获得样品的预倾角、对比度及穿透率进行了量测,并研究了各条件下样品的残影(Image Sticking)性能。结果显示:在900~2 700s,400~600mJ/cm~2范围内,固烤时间和曝光能量对LCD光学性能影响较小,但对残影性能影响较大,IS随曝光量增大有恶化的趋势,且该趋势在高亚胺化程度下趋于平缓;调整固烤时间及曝光能量可以获得较佳的残影性能,固烤时间1 800s,曝光能量400~500mJ/cm~2条件的LCD残影性能较佳。     

Power performance of InP-based single and double heterojunctionbipolar transistors

The microwave and power performance of fabricated InP-based single and double heterojunction bipolar transistors (HBTs) is presented. The single heterojunction bipolar transistors (SHBTs), which had a 5000 Å InGaAs collector, had BV_CEO of 7.2 V and J_Cmax of 2×10⁵ A/cm². The resulting HBTs with 2×10 μm² emitters produced up to 1.1 mW/μm2 at 8 GHz with efficiencies over 30%. Double heterojunction bipolar transistors (DHBTs) with a 3000-Å InP collector had a BV_CEO of 9 V and J_{c max} of 1.1×10⁵ A/cm², resulting in power densities up to 1.9 mW/μm² at 8 GHz and a peak efficiency of 46%. Similar DHBTs with a 6000 Å InP collector had a higher BV_CEO of 18 V, but the J _{c max} decreased to 0.4×10⁵ A/cm² due to current blocking at the base-collector junction. Although the 6000 Å InP collector provided higher f_max and gain than the 3000 Å collector, the lower J_{c max} reduced its maximum power density below that of the SHBT wafer. The impact on power performance of various device characteristics, such as knee voltage, breakdown voltage, and maximum current density, are analyzed and discussed     

Photo-Stability Measurement of Electro-Optic Polymer Waveguides With High Intensity at 1550-nm Wavelength

Photo-stability measurements of electro-optic polymer inverted ridge waveguides, fabricated from AJ-CKL1, AJ416 and LPD-80, are conducted up to 30, 100, and 100 mW of input power coupled into the waveguides respectively. These experiments are performed in a N₂ atmosphere to exclude absorbed O₂. AJ416 and LPD-80 are found to be stable up to at least 1 MW/cm² at 1550 nm. In contrast, photo-degradation was observed in an ambient atmosphere with 1 mW (LPD-80) and 10 mW (AJ-CKL1) coupled into the waveguides.     

Amorphous silicon phototransistor as nonlinear optical device forhigh dynamic range imagers

An amorphous silicon bulk barrier phototransistor is studied as a basic element for the pixel of high dynamic photosensor arrays. The device is an n-i-δp-i-n structure whose optical gain shows a nonlinear dependence on the illumination intensity. For each applied bias voltage, a quasi-hyperbolic decrease of the optical gain as a function of the incident power is found. This behavior can be explained taking into account both the material characteristics (defect distribution, dopant concentration), and the structure properties. Our measurements lead to a minimum detectable signal of about 0.7 nW/cm² independently on the applied voltage, making the device suitable for low illumination conditions. On the other hand, by increasing the input power up to 35 mW/cm², we did not find saturation of output photocurrent leading to a dynamic range of at least of 120 dB. This value can be further increased by using as basic cell of the pixel the phototransistor and a resistor connected between the voltage supply and the collector electrode