Growth and spectroscopy of Dy doped in ZnWO4 crystal

Single-crystal ZnWO₄:Dy³⁺ was grown by Czochralski technique. The XRD, absorption spectra as well as fluorescence spectrum are investigated and the Judd–Ofelt intensity parameters Ω₂, Ω₄, Ω₆ are obtained to be 7.76 × 10⁻²⁰ cm², 0.57 × 10⁻²⁰ cm², 0.31 × 10⁻²⁰ cm², respectively. Calculated radiative transition rate, branching ratios and radiative lifetime for different transition levels of ZnWO₄:Dy³⁺ crystals are presented. Fluorescence lifetime of ⁴F_9/2 level is 158 μs and quantum efficiency is 66%.The most intense fluorescence line at 575 nm correlative with transition ⁴F_9/2 → ⁶H_13/2 is potentially for application of yellow lasers.     

Up-conversion dynamics in GdAlO3:Er single crystal fibre

Green fluorescence has been obtained under continuous laser excitation in the 780–860 nm range in GdAlO₃:Er³⁺. With the help of the Judd-Ofelt treatment we built a model based on population rate equations to describe its time evolution. We found the intensity parameters to be Ω₂ = 2.045 × 10⁻²⁰ cm², Ω₄ = 1.356 × 10⁻²⁰ cm² Ω₆ = 1. 125 × 10⁻²⁰ cm². Even if a two-photon absorption and a looping mechanism are necessary to well describe the dynamics, the main process responsible for up-conversion is energy transfer between erbium ions.     

Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation

Highly conducting and transparent indium tin oxide (ITO) thin films were prepared on SiO₂ glass and silicon substrates by pulsed laser ablation (PLA) from a 90 wt.% In₂O₃-10 wt.% SnO₂ sintered ceramic target. The growths of ITO films under different oxygen pressures (P_O2) ranging from 1×10⁻⁴–5×10⁻² Torr at low substrate temperatures (T_s) between room temperature (RT) and 200°C were investigated. The opto-electrical properties of the films were found to be strongly dependent on the P_O2 during the film deposition. Under a P_O2 of 1×10⁻² Torr, ITO films with low resistivity of 5.35×10⁻⁴ and 1.75×10⁻⁴ Ω cm were obtained at RT (25°C) and 200°C, respectively. The films exhibited high carrier density and reasonably high Hall mobility at the optimal P_O2 region of 1×10⁻² to 1.5×10⁻² Torr. Optical transmittance in excess of 87% in the visible region of the solar spectrum was displayed by the films deposited at Po₂≥1×10⁻² Torr and it was significantly reduced as the P_O2 decreases.     

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Ohmic contacts to the top p-type layers of 4H-SiC p⁺–n–n⁺ epitaxial structures having an acceptor concentration lower than 1×10¹⁹ cm⁻³ were fabricated by the rapid thermal anneal of multilayer Al/Ti/Pt/Ni metal composition. The rapid thermal anneal of multilayer A1/Ti/Pt/Ni metal composition led to the formation of duplex cermet composition containing Ni₂Si and TiC phases. The decomposition of the SiC under the contact was found to be down to a depth of about 100 nm. The contacts exhibited a contact resistivity R_c of 9×10⁻⁵ Ω cm⁻² at 21°C, decreasing to 3.1×10⁻⁵ Ω cm⁻² at 186°C. It was found that thermionic emission through the barrier having a height of 0.097 eV is the predominant current transport mechanism in the fabricated contacts.     

Structural properties of swift heavy ion beam irradiated Fe/Si bilayers

The Fe/Si multilayers were prepared by electron beam evaporation in a cryo-pumped vacuum deposition system. Ag⁺ and Au⁺ ions of 100 MeV at two different fluencies such as 1 × 10¹² ions/cm² and 1 × 10¹³ ions/cm² at a pressure of 10^− 7 torr were used to irradiate the Fe/Si samples. The irradiated samples were analyzed by High-Resolution XRD and it reveals that the irradiated films are having polycrystalline nature and it confirms the formation of the β-FeSi₂. The structural parameters such as crystallite size (D), strain (ε) and dislocation density (δ) have been evaluated from the XRD spectrum. The role of the substrates and the influence of swift heavy ions on the formation of β-FeSi₂ have been discussed in this paper.     

Sc掺杂Nd:CaF2激光晶体的结构及其光谱性能参数

采用温度梯度法生长了0.5at% Nd、xat% Sc:CaF₂(x=0, 2, 5, 8)系列晶体, 测试了晶体的吸收光谱、荧光光谱和荧光寿命。研究发现发射强度和荧光寿命随着Sc³⁺离子浓度的增加而提高。通过改变Sc³⁺离子的浓度发现, 当掺杂5at% Sc³⁺时可以获得最大的吸收截面为1.42×10^-20 cm²。另外, 掺入Sc³⁺使共掺晶体在吸收光谱796 nm处产生新峰。综上, 通过调节Sc³⁺离子浓度, 可以改变Nd³⁺离子的局域结构, 优化晶体的光谱性能。     

Passively Q-switched diode-pumped Yb:YAG laser using Cr-doped garnets

We investigate the repetitive modulation in the kHz frequency domain of a passively Q-switched, diode-pumped Yb:YAG laser, by Cr⁴⁺:YAG, Cr⁴⁺:LuAG, and Cr⁴⁺:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross-section, e.g. σ_em=3.3×10⁻²⁰ cm² were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of ≈10.4 kW, with energy of ≈0.5 mJ/pulse, were extracted with 30% extraction efficiency.     

A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

New barrier layer, etch stop and hardmask films, including hydrogenated amorphous a-SiC_x:H (SiC), a-SiC_xO_y:H (SiCO), and a-SiC_xN_y:H (SiCN) films with a dielectric constant (k) approximately 4.3, are produced using the plasma-enhanced chemical vapor deposition technique. The chemical and structural nature, and mechanical properties of these films are characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and nano-indentation. The leakage current density and breakdown electric field are investigated by a mercury probe on a metal-insulator-semiconductor structure. The properties of the studied films indicate that they are potential candidates as barrier layer, etch stop and hardmask films for the advanced interconnect technology. The SiC film shows a high leakage current density (1.3×10⁻⁷ A/cm² at 1.0 MV/cm) and low breakdown field (1.2 MV/cm at 1.0×10⁻⁶ A/cm²). Considering the mechanical and electrical properties requirements of the interconnect process, SiCN might be a good choice, but the N content may result in via poison problem. The low leakage current (1.2×10⁻⁹ A/cm² at 1.0 MV/cm), high breakdown field (3.1 MV/cm at 1.0×10⁻⁶ A/cm²), and relative high hardness (5.7 GPa) of the SiCO film indicates a good candidate as a barrier layer, etch stop, or hardmask.     

Effects of reduction treatment on the photorefractive properties of Pb0.5Ba0.5Nb2O6

Lead barium niobate is a new photorefractive material of high interest for a variety of applications including holographic storage. Pb_0.5Ba_0.5Nb₂O₆ crystals have been grown by the Bridgman method, and the effects of heat treatments on their photorefractive properties were investigated using Ar ion laser at λ=514.5 nm. The color and absorption spectrum of the crystals varied depending on the oxygen partial pressure during heat treatment. The oxygen diffusivity was estimated to be in the order of 10⁻⁶ and 10⁻⁵ cm²/h at 425 and 550 °C, respectively. Reduction treatment at an oxygen pressure of 215 mTorr increased the effective density of photorefractive charges about three times from 8.0×10¹⁵ to 2.2×10¹⁶ cm⁻³ and made the charge transport more electron-dominant. As a result, the maximum gain coefficient improved from 5.5 to 13.8 cm⁻¹. A diffraction efficiency as high as 70% was achieved in a reduced crystal.     

Deep levels in GaInAs grown by molecular beam epitaxy and their concentration reduction with annealing treatment

X-ray diffraction (XRD), current–voltage (IV), capacitance–voltage (CV), deep-level transient Fourier spectroscopy (DLTFS) and isothermal transient spectroscopy (ITS) techniques are used to investigate the thermal annealing behaviour of three deep levels in Ga_0.986In_0.014As heavily doped with Si (6.8 × 10¹⁷ cm⁻³) grown by molecular beam epitaxy (MBE). The thermal annealing was performed at 625 °C, 650 °C, 675 °C, 700 °C and 750 °C for 5 min. XRD study shows good structural quality of the samples and yields an In composition of 1.4%. Two main electron traps are detected by DLTFS and ITS around 280 K, with activation energies of 0.58 eV and 0.57 eV, capture cross sections of 9 × 10⁻¹⁵ cm² and 8.6 × 10⁻¹⁴ cm² and densities of 2.8 × 10¹⁶ cm⁻³ and 9.6 × 10¹⁵ cm⁻³, respectively. They appear overlapped and as a single peak, which divides into two smaller peaks after annealing at 625 °C for 5 min.

Annealing at higher temperatures further reduces the trap concentrations. A secondary electron trap is found at 150 K with an activation energy of 0.274 eV, a capture cross section of 8.64 × 10⁻¹⁵ cm² and a density of 1.38 × 10¹⁵ cm⁻³. The concentration of this trap level is also decreased by thermal annealing.     

Destruction of carbon disulfide in aqueous solutions by sonochemical oxidation

Carbon disulfide (CS₂) is toxic to animals and aquatic organisms, and can also decompose to carbonyl sulfide (OCS) and hydrogen sulfide (H₂S) in aqueous environment. The kinetics of the sonochemical degradation of aqueous CS₂ was studied in a batch reactor at 20 kHz and 20 °C, and the effects of process parameters (e.g. concentration, ultrasonic intensity, irradiating gas) investigated. The concentrations of unbuffered CS₂ solutions used were (6.4–7.0)×10⁻⁴, 10.5×10⁻⁴ and (13.2–13.6)×10⁻⁴ M and the intensities were varied from 14 to 50 W. The reaction rate was found to be zero-order and the rate constant for the degradation at 20 °C and 14W in air was 21.1 μM/min using the largest initial concentration range studied. At the same initial concentration range but at 50 W (39.47 W/m²) the degradation rate of CS₂ was 46.7 μM/min, more than two times that at 14 W (11.04 W/m²). The rate of CS₂ sonochemical degradation in the presence of the different gases was in the order of He>air≥N₂O>Ar; the rate with helium was found to be about three times that of argon. The formation of sulfate (SO₄²⁻) as reaction product with air as the irradiating gas was enhanced in the presence of hydrogen peroxide (H₂O₂) and inhibited in the presence of 1-butanol. The sonochemical oxidation of CS₂ may prove to be an efficient and environmentally benign way for the removal of this hazardous pollutant from natural water and wastewater.     

Charge trapping in polymer diodes

We report studies focusing on the nature of trap states present in single layer ITO/poly(phenylene vinylene)/Al light emitting diodes. At high applied bias the IV characteristics from 11 to 290 K can be successfully modelled by space charge limited current (SCLC) theory with an exponential trap distribution, giving a trap density H_t of 4(±2) × 10¹⁷ cm⁻³, μ_p, between 10⁻⁶ and 5 × 10⁻⁸ cm² V⁻¹ s⁻¹ and a characteristic energy E_t of 0.15 eV at high temperatures. The transient conductance follows a power-law relationship with time whose decay rate decreases with decreasing temperature. This can be directly related to the emptying of the trap distribution found in the SCLC analysis. Due to variations in structure, conformation and environment, the polymer LUMO and HOMO density of states form Gaussian distributions of chain sites. The deep sites in the tail of the distributions are the observed traps for both positive and negative carriers. The same sites dominate the photo- and electroluminescence emission. This implies that the emissive layer in organic LED's should be made as structurally disordered as possible.     

Mechanical stability of Ca65Mg15Zn20 bulk metallic glass during deformation in the supercooled liquid region

Ca₆₅Mg₁₅Zn₂₀ bulk metallic glass (BMG) samples of dimensions 3.2 mm × 7 mm × 125 mm were prepared using a low-pressure die casting technique. These samples were ground to produce tensile test pieces in compliance with ASTM E8-04. This work is the first reported study of the tensile behaviour of Ca₆₅Mg₁₅Zn₂₀ BMG in the supercooled liquid region (105–120 °C). Two deformation conditions were used for testing: (i) constant strain rate testing from 10⁻³ to 10⁻⁴ s⁻¹ and (ii) constant load testing using loads of 20–50 N applied to a tensile sample during heating at a constant rate of 5 °C s⁻¹. The maximum elongation to failure in the BMG was in excess of 850% for constant load testing although, under isothermal testing conditions, most samples failed after 200% elongation. It is concluded that large superplastic elongations (>500%) during isothermal tensile straining is difficult in this alloy due to the onset of crystallization.     

Ordered Langmuir-Blodgett films of a substituted lutetium bisphthalocyanine

High-quality LB multilayers have been prepared from the Lu(III) sandwich complex of 2,3,9,10,16,17,23,24-octa (n-butoxy)phthalocyanine (LuPc₂(OBu)₁₆). Surface pressure-area isotherms were characterized and indicate that a stable monolayer is formed corresponding to an area per molecule of 2.4 nm² at 30 mN m⁻¹. The LB films were highly birefringent, and polarized spectra gave dichroic ratios of 3.3 for the 670 nm absorption band and between 0.5 and 2.8 for infrared absorptions. The results indicate that the phthalocyanine rings were highly oriented perpendicular to the dipping direction but somewhat tilted from the substrate normal. The order was shown to be absent when (i) unsubstituted LuPc₂ was used for LB films, or (ii) the horizontal lifting method of film deposition was used, or (iii) the surface pressure was increased to 50 mN m⁻¹, causing a molecular rearrangement. The ordering was improved at 100 °C and finally lost at 280 °C by annealing on a hot stage. The d.c. electrical conductivity of LB films of LuPc₂(OBu)₁₆ was low (σ ≈ 2 × 10⁻⁷ Ω⁻¹ m⁻¹), in contrast with unsubstituted LuPc₂ (σ ≈ 10⁻¹ Ω⁻¹ m⁻¹) and showed no evidence for anisotropy. The findings are in broad agreement with related studies and illustrate some of the many factors involved in improving the structure of phthalocyanine LB films for possible applications.     

Normal metal, ohmic contacts to high-temperature superconducting YBa2Cu3O7-δ thin films suitable for multichip modules

Normal metal, ohmic contacts to high-temperature superconductor (HTSC) materials will be used to form via structures between HTSC interconnect levels, and also, substrate bonding pads in a superconducting multichip module (SMCM). Specific contact resistivities below 10⁻⁸ Ω cm² will be required for such contacts to control signal attenuation and local contact heating of the LN₂cooled SMCM. Previous work on normal metal/superconducting contacts has not focused on metallization schemes which will be stable during subsequent high-temperature processing. Metal contacts of gold, silver, and palladium were formed on superconducting thin films of YBa₂Cu₃O_7-δ via evaporation and sputtering through a shadow mask followed by annealing in various ambients and at several temperatures. Palladium contacts oxidized readily during anneal, and sputtered gold contacts required additional processing and exhibited higher specific contact resistivities. The best contacts were obtained by a controlled-cooling oxygen anneal of evaporated gold or silver, as indicated by normal-state specific contact resistivities of 3 × 10⁻⁵ Ω cm² and 4 × 10⁻⁵ Ω cm², respectively. This work differs from previously published results by describing contacts which required no extensive preparation of the HTSC surface and were stable to 700 °C, indicating these contacts would be compatible with subsequent high-temperature processing of the additional HTSC layers required in a multi-level SMCM.     

Underlying mechanisms for unique elastic properties of nanocrystalline Au

In order to get an insight into the grain boundaries (GBs) in nanocrystalline (n-) metal, we prepared the high-density n-Au with ρ/ρ₀>99% by the gas-deposition method and carried out the vibrating reed measurements, where ρ/ρ₀ is the relative density referring to the bulk density. The strain amplitude dependence (SAMD) of the resonant frequency (f) and the internal friction (Q⁻¹) was measured for the strain () amplitude between 10⁻⁶ and 2×10⁻³ and for temperature between 5 and 300 K. No plastic deformations are detected for the present strain range, where f decreases for up to 10⁻⁴ and then turns to increase, showing saturation for between 10⁻⁴ and 2×10⁻³. The low temperature irradiation by 2 MeV electrons or 20 MeV protons causes an increase in the Young’s modulus at 6 K, which is surmised to reflect a modification of the anelastic process in the GB regions. In contrast, the SAMD of f is hardly modified by irradiation, suggesting that it is indicative of a collective motion of atoms in n-Au.     

High deposition rate of amorphous silicon thick layers using a gas mixture of 10% silane in hydrogen

The deposition rate of amorphous silicon of the order of 0.9 μm/h, has been obtained using a gas mixture of 10% silane (SiH₄) in hydrogen (H₂), with a RF source of 13.56 MHz. Best films were deposited at a total flow rate of 100–200 sccm, 300°C substrate temperature, 66.7 Pa, and RF power density of 150 mW/cm². The geometrical configuration of the reaction chamber included a gas injector that was specially designed for this purpose. Films were characterized by Fourier transform infrared (FTIR), secondary ion mass spectrometry (SIMS), and profilometer. In addition, thick p-i-n diodes were prepared and characterized, obtaining reverse current densities lower than 5×10⁻⁶ A/cm² at full depletion.     

Yb to Er energy transfer and rate-equations formalism in the eye safe laser material Yb:Er:Ca2Al2SiO7

Rate equations formalism is used to predict the population ratio of the Er^{3+ 4}I_13/2 levels involved in the 1.55 μm laser transition in the Yb:Er:CAS laser materials. An effective Yb → Er energy transfer, favourable to the Er³⁺ 1.55 μm laser emission, is demonstrated in this laser host. Indeed, the Yb → Er transfer and the Er → Yb back transfer rates are calculated to be 6 x 10⁻¹⁶ and 0.45 x 10⁻¹⁶ cm³ s⁻¹, respectively. Attempts of codoping the system with Nd³⁺, Eu³⁺ and Ce³⁺ have been realised in order to increase the population of the Er^{3+ 4}I_13/2 laser emitting level. Best results are obtained with Ce³⁺ ion since in the sample containing 6 x 10²⁰ Ce³⁺/cm³, the Er^{3+ 4}I_11/2 level lifetime is divided by a factor of 3 while the Er^{3+ 4}I_13/2 fluorescence lifetime remains unaffected. On the contrary, codoping with Nd³⁺ or Eu³⁺ ions simultaneously decreases the Er^{3+ 4}I_11/2 and ⁴I_13/2 kinetics parameters. The role of the other parameters such as Yb/Er concentrations ratios is also discussed.     

Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

In order for hot-wire chemical vapor deposition to compete with the conventional plasma-enhanced chemical vapor deposition technique for the deposition of microcrystalline silicon, a number of key scientific problems should be cleared up. Among these points, the concentration of tungsten (nature of the filament), as well as the concentration of oxygen and carbon (elements issued when vacuum is broken between two runs), should not exceed threshold values, beyond which electronic properties of the films could be degraded, as in the case of monocrystalline silicon. Quantitative chemical analysis of these elements has been carried out using the secondary ion mass spectrometry technique through depth profiles. It has been shown that for a high effective filament surface area (S_f=27 cm²), the W content increases steadily from 5×10¹⁴ to 2×10¹⁸ atoms cm⁻³ when the filament temperature T_f increases from 1500 to 1800 °C. For a fixed T_f, the W content increases with the effective surface area S_f. Thus, considering our reactor geometry, the W content does not exceed the detection limit (5×10¹⁴ atoms cm⁻³) when T_f and S_f are limited to 1600 °C and 4 cm², respectively. For O and C elements, under deposition conditions of high dilution of silane in hydrogen (96%), O and C concentrations approaching 10²⁰ atoms cm⁻³ have been obtained. The introduction of an inner vessel inside the reactor, the addition of a load-lock chamber and a decrease in substrate temperature to 300 °C have led to a drastic decrease in these contents down to 3×10¹⁸ atoms cm⁻³, compatible with the realization of 6% efficiency HWCVD μc-Si:H solar cells.     

Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films

We have investigated the stress behaviors and a mechanism of void formation in TiSi_x films during annealing. TiSi_x thin films were prepared by DC magnetron sputtering using a TiSi_2.1 target in the substrate temperature range of 200–500 °C. The as-deposited TiSi_x films at low substrate temperature (<300 °C) have an amorphous structure with low stress of 1×10⁸ dynes/cm². When the substrate temperature increases to 500 °C, the as-deposited TiSi_x film has a mixture of C49 and C54 TiSi₂ phase with stress of 8×10⁹ dynes/cm². No void was observed in the as-deposited TiSi_x film. Amorphous TiSi_x film transforms to C54 TiSi₂ phase with a random orientation of (311) and (040) after annealing at 750 °C. The C49 and C54 TiSi₂ mixture phase transforms to (040) preferred C54 TiSi₂ phase after annealing over 650 °C. By increasing substrate temperature, the transformation temperature for C54 TiSi₂ can be reduced, resulting in relieved stress of TiSi₂ film. The easy nucleation of the C54 phase was attributed to an avoidance of amorphous TiSi_x phase. We found that amorphous TiSi_x→C54 TiSi₂ transformation caused higher tensile stress of 2×10¹⁰ dynes/cm², resulting in more voids in the films, than C49→C54 transformation. It was observed that void formation was increased with thermal treatment. The high tensile stress caused by volume decreases in the silicide must be relieved to retard voids and cracks during C54 TiSi₂ formation.