降低晶体管hFE的电子束辐照工艺的研究

研究了辐照剂量、剂量率、退火温度、退火时间、辐照方法等因素对晶体管ｈＦＥ值（电流放大倍数）的影响。结果表明，电子束辐照能有效地降低晶体管ｈＦＥ值，并能通过退火处理使其稳定。     

NMOS晶体管的退火特性研究

探讨了加固型ＣＣ４００７经＾６０Ｃｏγ射线辐照后ＮＭＯＳ晶体管的退火特性，研究了辐照敏感参数随辐照剂量、退火温度、退火时间和退火偏置的变化关系。经相同总剂量辐照的器件，高源１００℃下的退火速度远大于室温２５℃下退火速度。２５￣２５０℃下的等时退火，其退火程度接近１６８ｈ的１００℃等温退火。对不同的退火情况，退火偏置的作用是相似的，＋５Ｖ栅偏压退火速度大于０Ｖ栅偏压和浮空退火速度。对氧化物陷阱电荷的     

P沟MOSFET／FIPOS的γ射线总剂量辐照特性

采用高选择和自终止多孔氧化硅全隔离技术的制备了高质量的ＳＯＩ材料，研究了在该材料上采用２μｍＣＭＯＳ工艺制备的不同沟道长度的Ｐ沟ＭＯＳＦＥＴ的＾６０Ｃｏγ射线总剂量辐照特性，表明经５ｋＧｙ（Ｓｉ）辐照后，器件仍有特性，但阈值电压有较大的漂移，这主要是由栅氧化层中的辐照感生电荷而引起，不同的沟长度ＰＭＯＳＦＥＴ的辐照特性有基本相同，经一段时间室温退火，阈值电压出现回漂。     

不同偏置条件下基区掺杂浓度对NPN双极晶体管电离辐照的影响

对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管,在不同偏置条件下进行60Co-γ辐照效应和退火特性研究.结果显示:基区掺杂浓度不同,NPN双极晶体管辐照响应也不相同,低基区掺杂浓度的晶体管辐照损伤要明显大于高基区掺杂浓度的晶体管辐照损伤;偏置条件不同,晶体管辐照响应也有很大差别,反向偏置辐照NPN晶体管参数退化...     

CMOS器件辐照后热退火过程中激发能分布的确定

对CNMOS晶体管辐照后的等温、等时退火特性进行讨论，给出辐照敏感参数在等温、等时退火过程中随退火时间、退火温度的变化关系。根据退火模型计算了CMOS器件辐照后25、100^oC等温和25～250℃等时退火过程中激发能的分布。结果表明：25、100℃等温退火激发能范围分别在0.65～0.76eV和0.75～0.95eV之间；25～250℃等时退火的激发能范围在0.5～1.1eV之间，峰值位于0.81eV。     

不同基区掺杂浓度NPN双极晶体管电离辐照效应

对相同工艺制作但基区掺杂浓度不同的国产NPN双极晶体管,在不同剂量率条件下进行60Coγ辐照效应和退火特性研究。结果显示,晶体管基区掺杂浓度不同,对高、低剂量率的辐照响应也不相同,低基区掺杂浓度的晶体管辐照损伤明显高于高基区掺杂浓度的晶体管。     

~（60）Co辐照对聚四氟乙烯表面润湿性的影响

研究了具有低表面能的氟聚合物聚四氟乙烯（ＰＴＦＥ），经６０Ｃｏγ射线辐照后表面状态的变化，以及其对液体介质蒸馏水的润湿性。较详细地论述了辐照后表面粗糙度、结晶度以及表面化学基因等不同因素对ＰＴＦＥ表面润湿性的影响。通过对ＰＴＦＥ及其表面的红外、Ｘ光衍射，表面粗糙度的分析，弄清了辐照后ＰＴＦＥ表面化学基团的改变对有机氟聚合物表加的润湿性影响很大，而粗糙度和结晶度的变化对润湿性影响较小。     

pMOSFET多管级联结构辐照响应特性研究

ｐＭＯＳＦＥＴ剂量计多管级联结构电离辐射响应持性比单管能明显提高辐射响应灵敏度。多管共衬底级联与不共衬底级联灵敏度提高倍数较大。比较了多管共衬底级联结构在两种辐照偏置条件下的辐照响应差异，实验结果表明，辐照时，保持恒流注入条件，其响应灵敏度、线性度和稳定性均高于零偏置的结果。同时，研究了多管级联结构完全退火后的二次辐照响应，结果表明，响应灵敏度与线性度均高于第１次辐照的。     

双极晶体管不同剂量率的辐射效应和退火特性

不同类型和型号的国产及进口双极晶体管的不同剂量率的辐照效应及退火特性进行了研究。结果表明：在辐照的剂量率范围内,无论是国产还是进口的双极晶体管,都有明显的低剂量率辐照损伤增强现象,且NPN管比PNP管的明显。文中对引起双极器件辐照损伤差异的机理进行了探讨。     

注F+NMOSFET的电离辐照与退火特性

比较了CC4007电路栅介质中注F′和未注F′的NMOS晶体管在不同偏置辐照和不同环境退火的行为,结果表明,栅介质中F′的引入能明显降低器件的辐照敏感性,提高器件的可靠性能。表现为在同样辐照偏置下注F′器件比未注F′器件的阈电压漂移小,辐照后退火期间的界面态、氧化物电荷变化稳定。     

Electric Field Strength Dependence of Surface Damage in Oxde Passivated Silicon Planar Transistors

A dependence of surface degradation induced by ionizing radiation in matched oxide-passivated silicon planar epitaxial transistors on junction fringing electric field strength present during exposure is reported. The electric field strength and gamma dose dependence are investigated of the decrease in the forward current gain, hFE (as reflected by the increase in the surface recombination current component), the increase in the surface recombination velocity (as reflected by the increase in the reciprocal of the minority carrier lifetime), and the increase in junction capacitance. Empirical prediction equations have been derived, for matched devices, correlating the normalized base current increase and the normalized surface recombination velocity increase with the average junction electric field strength present during irradiation and the total gamma dose. The ionizing radiation induced surface recombination and surface channel components are analyzed from a study of the reciprocal slope term, "n", obtained from forward and inverse configuration current-voltage data.     

PMOS剂量计的长期室温退火

为掌握ＰＭＯＳ剂量计的应用方式并提高其应用精度，研究了ＰＭＯＳ剂量计的辐照剂量记录－阈电压在室温下的长期退火表现。结果表明：氧化物电荷的隧道退火与界面态的后生长效应是造成退火的原因，ＰＭＯＳ剂量计辐照及贮藏偏置是决定其退火方向和程度大小的重要因素。负偏置条件能较好地保持其辐照记录，在正偏置贮存下的退火较大。     

国产工艺的部分耗尽SOIPMOSFET总剂量辐照及退火效应研究

对国产工艺的部分耗尽SOIPMOSFET⁶⁰Coγ射线的总剂量辐照及退火效应进行了研究。结果表明：随着工艺技术的发展,正栅氧化层具有较强的抗辐照加固能力,背栅由于埋氧层厚度和工艺生长原因而对总剂量辐照较为敏感;辐照引入的深能级界面态陷阱电荷的散射作用,导致了正栅源漏饱和电流的显著降低;退火过程中界面态陷阱电荷的饱和决定了正栅亚阈曲线的平衡位置,而隧穿或热发射的电子只能中和部分背栅氧化物陷阱电荷,使得退火后背栅曲线仍与初始值有一定负向距离。     

CMOS器件总剂量辐射响应理论模拟

利用线性响应理论模型模拟C4007B、CC4007RH和CC4011器件受不同γ射线剂量率辐射时的总剂量效应。研究结果表明，辐射响应与吸收剂量成线性关系时，在实验室选用任一特定剂量率进行总剂量辐射和辐照后室温退火，可以通过线性响应理论模拟其它剂量率辐射下的总剂量效应。理论模拟结果与实际不同剂量率辐射实验结果符合得很好。     

New scintillation materials for fiber tracking and calorimetry

Radiation damage studies were performed on new polystyrene-based plastic scintillators. Several samples of different multicomponent systems containing new fluorescent compounds were irradiated with a ⁶⁰Co source to a 10 Mrad dose. After irradiation, the samples were annealed for ten days in oxygen and three days in air. Scintillation light output, fluorescence, and transmittance spectra were recorded at three different stages; before irradiation, immediately after irradiation, and after the annealing process. After irradiation and the annealing period, the light output of the best scintillators had decreased by 10% of their original values     

低剂量率辐照损伤增强效应的高温辐照加速试验机理研究

本文建立了包含温度场的低剂量率辐照损伤增强效应(ELDRS)的物理模型，利用有限元方法仿真了辐照温度、剂量率、总剂量和辐射感生产物浓度的相互关系，分析了工艺参数，如氧化物陷阱浓度、能级，含H缺陷浓度及界面陷阱钝化能对最佳辐照温度的影响。结果表明，最佳辐照温度是辐射感生产物产生与退火相互竞争的结果，且辐射感生产物的退火行为是决定最佳辐照温度的主要因素，因此氧化物陷阱的热激发能及界面陷阱的钝化能对最佳辐照温度的影响最为明显，是不同器件最佳辐照温度差异性的主要原因。     

聚丙烯密度变化与形态等因素的关系

含不同添加剂（二氧化钛，炭黑，酞菁蓝，还原橙）聚丙烯密度与结晶温度，退火以及辐照有关，密度的变化取决于样品的结晶度和球晶体积。辐照后的聚丙烯在６０℃低温下退火，匠增与结晶温度和退火时间有关，密度最终趋于一个极限值，主要是由于无定形区小分子形成结晶所致。辐照而未退火只能使样品密度发生轻微的变化。     

双极运算放大器在不同电子能量下的辐射效应和退火特性

介绍了LM837双极运算放大器分别在不同能量（1。8、1 MeV）不同束流、相同能量不同束流电子辐照环境中的响应特性及变化规律。分析了不同偏置状态下其电离辐照敏感参数在辐照后3种退火温度（室温,100、125 ℃）下随时间的变化,并讨论了引起电参数失效的机理。结果表明：与1 MeV 辐照相比,1。8 MeV电子辐照引起的LM837辐射损伤更明显;辐照过程中正偏条件下的偏置电流变化较零偏时的稍大;LM837辐照后的退火行为与温度有较大的依赖关系,而这种关系与辐照感生的界面态密度增长直接相关。     

Lifetime in Neutron Irradiated Silicon - Application to Devices

Detailed measurements on special gated Si p+n diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. For recombination in the neutral bulk, the lifetime damage constant is about 3 x 105 n-sec/cm2 at high injection levels and varies with dose between 103 and 104 n-sec/cm2 for low injection levels. The damage constant for the space-charge region recombination lifetime is about 5 x 105 n-sec/cm2 for forward biases in the range of 0.1 to 0.3 V and the damage constant for the generation lifetime in the space-charge region is 5 x 107 n-sec/cm2 both nearly independent of dose. The surface generation and recombination velocities are process dependent and are not a linear function of the dose. The surface generation velocity increases from about 10 cm/sec at 2 x 1011 n/cm2 to saturate at about 100 cm/sec at 1014 n/cm2 in the diodes studied here. Using these data, the grounded emitter current gain (hFE) for a Si pnp transistor (2N4872) is predicted as a function of dose and current density. Both the dose and the current density dependence of hFE, as predicted by our V-I characteristics and deduced lifetimes, are in reasonable agreement with the published specifications.     

Annealing Study on Neutron Irradiation Effects in Resonance Frequencies of Zircaloy Plates by EMAR Method

To develop the nondestructive hydrogen concentration measurement method for the irradiated zirconium alloy, the effect of neutron irradiation damage on acoustic properties obtained by the electromagnetic acoustic resonance (EMAR) method was investigated through annealing tests. It is confirmed that the recovery of irradiation damage begins at a lower annealing temperature than that in unirradiated coldworked materials. Unirradiated recrystallization-annealed materials did not show any change in acoustic properties or hardness during the additional RX annealing at 580°C, whereas the acoustic anisotropy (Δf) of the as-cold-worked unirradiated specimen was significantly increased. Four-cycle irradiation clearly decreased the shear wave velocity of the specimen by 1% compared to the RX-annealed specimen. In comparison with the wave velocity change, the acoustic parameters defined in this study are found to be less sensitive to irradiation damage. From the annealing study of the as-irradiated specimens to the RX condition, it is concluded that the absolute value of (Δf) increases by 0.1% and the frequency ratio (fl/fr) by about 0.006 as a result of the damage induced by the four-cycle irradiation in BWRs. These values are applicable to the relationships between the acoustic parameters and hydrogen concentrations of unirradiated materials as the correction factors to compensate the effects of irradiation damage.