Superconducting Coupling Nature at Grain Boundaries in Bi2Sr2CaCu2Ox Glass-Ceramics

Superconducting coupling nature at grain boundaries in Bi₂Sr₂CaCu₂O _x glass-ceramics consisting mainly of the low- T _c phase was first examined by measuring superconducting properties and temperature or ac field dependence of ac complex susceptibility. It was found from the ac loss peaks that superconducting coupling at grain boundaries was basically characterized by three types of weak links. The weak-link behaviors at grain boundaries depended strongly on cooling conditions after annealing and annealing time and temperature. Particularly, it was found that the weak links at grain boundaries were improved by prolonged annealing at 840°C. The furnace-cooled glass-ceramics obtained by annealing at 820° or 840°C for about 200 h exhibited a critical transport current density (77 K, zero magnetic field) of about 200 A/cm².     

Effects of La on Dielectric and Piezoelectric Properties of Pb1−xLa2x/3(Nb0.95Ti0.0625)2 O6 Ceramics

Ceramics with the chemical compositions of Pb_{1− x} La_{2 x /3}(Nb_0.95Ti_0.0625)₂O₆ (0≤ x ≤0.060) (PLTN) were prepared by the conventional solid-state reaction method. X-ray diffraction analysis indicated that Ti and La doping not only decreased the rhombohedral–tetragonal phase transformation temperature, but also stabilized the orthorhombic phase of PLTN ceramics. All ceramics sintered at 1190°–1250°C had shown the pure orthorhombic ferroelectric phase. La doping suppresses grain growth and inhibits the formation of pores and cracks, resulting in an increase in relative density up to 97%. The amount of La doping to PLTN ceramics obviously affect ceramics' piezoelectric constant ( d ₃₃) and dielectric loss (tanδ). The sample with x =0.015 possesses high Curie temperature ( T _c=560°C), low dielectric loss (tanδ=0.0054), and excellent piezoelectric constant ( d ₃₃=92 pC/N), presenting a high potential to be used in high-temperature applications as piezoelectric transducers.     

Influence of Nd2O3 Doping on the Reaction Process and Sintering Behavior of BaCeO3 Ceramics

The influence of Nd₂O₃ doping on the reaction process and sintering behavior of BaCeO₃ is investigated. Formation of BaCeO₃ is initiated at 800°C and completed at 1000°C. When Nd₂O₃ is added to the starting materials, the formation of BaCe_1–xNd_xO_3–δ is delayed and the temperature for complete reaction is increased to 1100°C. Only a BaCe_1-xNd_xO_3–δ solid solution with an orthorhombic crystal structure is present in the specimens for x ≤ 0.1. A secondary phase rich in Ce and Nd is formed within grains and at grain boundaries, when the Nd₂O₃ content is greater than the solubility limit (x ≥ 0.2). Pure BaCeO₃ is difficult to sinter, even at 1500°C, and only a porous microstructure could be obtained. However, doping BaCeO₃ with Nd₂O₃ markedly enhances its sinterability. The enhancement of the sinterability of Nd₂O₃-doped specimens at x ≤ 0.1 is attributed to the increase in the concentration of oxygen ion vacancies, which increases the diffusion rate. At x ≥ 0.2, the grain size is abnormally coarsened, which is caused by the formation of a liquid phase. While this liquid phase accelerates sintering, its beneficial effect on densification is counteracted by the segregation of the secondary grain-boundary phase which inhibits sintering.     

Formation of Grain-Boundary Carbon-Containing Phase During Annealing of YBa2Cu3O6+x

In situ annealing studies of YBa₂Cu₃O_6+x performed in an optical hot stage revealed that, at temperatures ∧450°, localized melting occurred. On subsequent cooling, a discrete second phase was observed at the YBa₂Cu₃O_6+x grain boundaries. Quantitative chemical analysis using X-ray wavelength dispersive spectroscopy indicated that the second phase was composed of a barium oxycarbonate. The source of the carbon in the second phase was identified to be CO₂ in the atmosphere.     

Massive Transformation in the Y2O3-Bi2O3 System

Cubic solid solutions in the Y₂O₃-Bi₂O₃ system with ∼25% Y₂O₃ undergo a transformation to a rhombohedral phase when annealed at temperatures ≤ 700°C. This transformation is composition-invariant and is thermally activated, and the product phase can propagate across matrix grain boundaries, indicating that there is no special crystallo-graphic orientation relationship between the product and the parent phases. Based on these observations, it is proposed that cubic → rhombohedral phase transformation in the Y₂O₃-Bi₂O₃ system is a massive transformation. Samples of composition 25% Y₂O₃-75% Bi₂O₃ with and without aliovalent dopants were annealed at temperatures ≤ 700°C for up to 10000 h. ZrO₂ as a dopant suppressed while CaO and SrO as dopants enhanced the kinetics of phase transformation. The rate of cubic/rhombohedra1 interface migration (growth rate or interface velocity) was also similarly affected by the additions of dopants; ZrO₂ suppressed while CaO enhanced the growth rate. Diffusion studies further showed that ZrO₂ suppressed while CaO enhanced cation interdiffusion coefficient. These observations are rationalized on the premise that cation interstitials are more mobile compared to cation vacancies in cubic bismuth oxide. The maximum growth rate measured was ∼10⁻¹⁰ m/s, which is orders of magnitude smaller than typical growth rates measured in metallic alloys. This difference is explained in terms of substantially lower diffusion coefficients in these oxide systems compared to metallic alloys.     

Decomposition Reactions in CaCu3Ti4O12 Ceramics

CaCu₃Ti₄O₁₂ (CCTO) ceramics sintered in air at 1115°C for 3 and 24 h have been heat treated in N₂ at 1000°C. Surface layers develop on the outer regions of the ceramics, and a combination of X-ray diffraction and analytical electron microscopy has been used to establish the phase content of the layers. A model to explain the formation of the surface layers is proposed based on decomposition of CCTO into a mixture of CaTiO₃, TiO₂, and Cu₂O. The role of limited decomposition in the development of electrically inhomogeneous CCTO ceramics prepared at elevated temperatures in air is discussed.     

Double Hysteresis Loop and Aging Effect in K0.5Na0.5NbO3–K5.4Cu1.3Ta10O9 Lead-Free Ceramics

In this work, the double-loop-like characteristics of K_0.5Na_0.5NbO₃+ x mol% K_5.4Cu_1.3Ta₁₀O₉ ceramic and its relationships with the transition temperature, aging, and switching have been investigated. Our results reveal that the phase transition temperature is an important parameter determining the aging requirement for the ceramics to exhibit the double-loop-like characteristics. For a ceramic with a high transition temperature, e.g. the ceramic with x =0.75 (tetragonal–orthorhombic phase temperature ∼206°C), the vacancies can migrate during the crystal transformation and settle in a distribution with the same symmetry as the crystal after the transformation. As a result, defect dipoles along the polarization direction are formed and provide restoring forces to reverse the switched polarizations, and thus producing a double polarization hysteresis ( P – E ) loop. On the other hand, aging is required for a ceramic with a low transition temperature, e.g. aging at 80°C for 30 days is required for the ceramic with x =1.5 (transition temperature ∼175°C). Our results also reveal that the defect dipoles can be switched under a slow-switching electric field (<1 Hz) or at high temperatures (>100°C), thus leading to an opening of the double P – E loop.     

Grain Growth in Two-Phase Ceramics: Al2O3 Inclusions in ZrO

The effect of Al₂O₃ inclusions with a greater average size (0.6 μm) than the average particle size of the major phase powder (<0.1 μm) on grain gowth was examined by sintering ZrO₂/Al₂O₃ composites (0,3,5,10, and 20 vol%) at 1400°C and then heat-treating at temperatures up to 1700°C. Normal grain growth was observed for all conditions. The inclusions appeared to have no effect on grain growth until the ZrO₂ grain size was ∼1.5 times the average inclusion size. Grain growth inhibition increased with volume fraction of the Al₂O₃ inclusion phase. At temperatures 1600°C, the inclusions were relatively immobile and most were located within the ZrO₂ grains for volume fractions <0.20; at higher temperatures, the inclusions could move with the grain boundary to coalesce. Grain growth was less inhilited when the inclusions could move with the boundaries, resulting in a larger increase in grain size than observed at lower temperatures. Analogies between mobile voids, entrapped within grain at lower temperature due to abnormal grain growth during the last state of sintering, and the observations concerning the mobile inclusions are made suggesting that grain-boundary movement can "sweep" voids to grain boundaries and eventually of four-grain junctions, where they are more likely to disappear by mass transport.     

Influence of Iron Doping on the Microstructure of YBa2(Cu1−xFex)3O7−δ Ceramics

Porosity, grain growth, phase composition, and microstructural defects were studied in sintered YBa₂ (Cu_1−x)₃O_7−x ceramics for x values up to 0.3. The porosity of the samples, related to the sintering mechanism, was independent of iron concentration. A linear dependence of the grain size with the inverse of the iron concentration was found, strongly suggesting grain boundary segregation of iron. The solubility limit was estimated to be x = 0.18 at 950°C in O₂. Beyond this limit, a new microstructural component was found consisting of YBa₂(Cu_1−xFe_x)₃O_7−δ, YBaCuFeO₅ and Ba(Cu,Fe)O₂. The transition from an orthorhombic twin to an orthorhombic tweed phase and a tetragonal phase was detected by polarized light microscopy.     

Microstructure and Piezoelectric Properties of (1−x)(Na0.5K0.5)NbO3–xLiNbO3 Ceramics

(1− x )(Na_0.5K_0.5)NbO₃– x LiNbO₃ [(1− x )NKN– x LN] ceramics were produced by the conventional solid-state sintering method, and their microstructure and piezoelectric properties were investigated. The formation of the liquid phase and K₆Li₄Nb₁₀O₃₀ second phase that were observed in the (1− x )NKN– x LN ceramics was explained by the evaporation of Na₂O during the sintering. A morphotropic phase boundary (MPB) was observed in the specimens with 0.05< x <0.08. Promising piezoelectric properties were obtained for the specimens with x =0.07. Therefore, the piezoelectric properties of this 0.93NKN–0.07LN ceramic were further investigated and were found to be influenced by their relative density and grain size. In particular, grain size considerably affected the d ₃₃ value. Two-step sintering was conducted at different temperatures to increase the grain size. Piezoelectric properties of d ₃₃=240 (pC/N) and k _p=0.35 were obtained for the 0.93NKN–0.07LN ceramics sintered at 1030°C and subsequently annealed at 1050°C.     

Low Breakdown Voltage Varistors by Grain Boundary Diffusion of Molten Bi2O3 in ZnO

Diffusion of molten Bi₂O₃ into the grain boundaries of sintered, alumina-doped (0.23 and 0.7 mol%) ZnO pellets resulted in varistors with breakdown voltages in the 3–5 V range and nonlinearity coefficients of 10–24. The varistors were fabricated by spreading a thin layer of Bi₂O₃ powder on the surface of ZnO pellets and heating the combination to various temperatures (860–1155°C) and different times. The highest nonlinearity coefficients (20–24) and lowest breakdown voltages (3–5 V) were recorded in samples annealed at 860°C for 35 min. Longer annealing times and/or higher temperatures resulted in progressively higher breakdown voltages. Eventually the devices became insulating, which was attributed to the formation of an insulating Bi₂O₃ layer between the grains. Separate wetting experiments have shown that the penetration of Bi₂O₃ into ZnO grain boundaries was a strong function of alumina doping —the penetration rate was decreased by a factor of 5–7 as the ZnO was doped with as little as 0.2 mol% alumina. It is this slowing down of the penetration of the ZnO grain boundaries that is believed to be critical in the development of the low breakdown voltages observed.     

Phase Diagram and Oxygen-Ion Conductivity in the Y2O3-Nb2O5 System

The phase equilibria in the Y₂O₃-Nb₂O₅ system have been studied at temperatures of 1500° and 1700°C in the compositional region of 0-50 mol% Nb₂O₅. The solubility limits of the C-type Y₂O₃ cubic phase and the YNbO₄ monoclinic phase are 2.5 (±1.0) mol% Nb₂O₅ and 0.2 (±0.4) mol% Y₂O₃, respectively, at 1700°C. The fluorite (F) single phase exists in the region of 20.1-27.7 mol% Nb₂O₅ at 1700°C, and in the region of 21.1-27.0 mol% Nb₂O₅ at 1500°C, respectively. Conductivity of the Y₂O₃- x mol% Nb₂O₅ system increases as the value of x increases, to a maximum at x = 20 in the compositional region of 0 ≤ x ≤ 20, as a result of the increase in the fraction of F phase. In the F single-phase region, the conductivity decreases in the region of 20-25 mol% Nb₂O₅, because of the decrease in the content of oxygen vacancies, whereas the conductivity at x = 27 is larger than that at x = 25. The conductivity decreases as the value of x increases in the region of 27.5 ≤ x ≤ 50, because of the decrease in the fraction of F. The 20 mol% Nb₂O₅ sample exhibits the highest conductivity and a very wide range of ionic domain, at least up to log p _O2=−20 (where p _O2 is given in units of atm), which indicates practical usefulness as an ionic conductor.     

High-Temperature Phase Relations in the System Y2O3-Ta2O5

The phase relations for the system y₂o₃–Ta₂o₅ in the composition range 50 to 100 mol% Y₂O₃ have been studied by solid-state reactions at 1350°, 1500°, or 17000C and by thermal analyses up to the melting temperatures. Weberite-type orthorhombic phases (W2 phase, space group C222₁), fluorite-type cubic phases (F phase, space group Fm3m )and another orthorhombic phase (O phase, space group Cmmm )are found in the system. The W2 phase forms in 75 mol% Y₂O₃ under 17000C and O phase in 70 mol% Y₂O₃ up to 1700°C These phases seem to melt incongruently. The F phase forms in about 80 mol% Y₂O₃ and melts congruently at 2454° 3°C. Two eutectic points seem to exist at about 2220°C 90 mol% Y²O₃, and at about 1990°C, 62 mol% Y₂O₃. A Phase diagram including the above three phases were not identified with each other.     

Solid-State Diffusive Amorphization in TiO2/ZrO2 Bilayers

Thin films of crystalline TiO₂ were deposited on self-assembled organic monolayers from aqueous TiCl₄ solutions at 80°C; partially crystalline ZrO₂ films were deposited on top of the TiO₂ layers from Zr(SO₄)₂ solutions at 70°C. In the absence of a ZrO₂ film, the TiO₂ films had the anatase structure and underwent grain coarsening on annealing at temperatures up to 800°C; in the absence of a TiO₂ film, the ZrO₂ films crystallized to the tetragonal polymorph at 500°C. However, the TiO₂ and ZrO₂ bilayers underwent solid-state diffusive amorphization at 500°C, and ZrTiO₄ crystallization could be observed only at temperatures of 550°C or higher. This result implies that metastable amorphous ZrTiO₄ is energetically favorable compared to two-phase mixtures of crystalline TiO₂ and ZrO₂, but that crystallization of ZrTiO₄ involves a high activation barrier.     

Effect of PO2 on Bulk and Grain Boundary Resistance of n-Type BaTiO3 at Cryogenic Temperatures

Complex impedance analysis at cryogenic temperatures has revealed that the bulk and grain boundary properties of BaTiO₃ polycrystals are very sensitive to the oxygen partial pressure during sintering. Polycrystals sintered at P _O2 as low as 10⁻¹⁵ atm were already electrically heterogeneous. The activation energy of the bulk conductivity in the rhombohedral phase was found to be close to that of the reduced undoped single crystal (i.e., 0.093 eV). The activation energy of the grain boundary conductivity increases with the temperature of the postsinter oxidation treatment from 0.064 to 0.113 eV. Analysis of polycrystalline BaTiO₃ sintered in reducing atmosphere and then annealed at P _O2= 0.2 atm has shown that the onset of the PTCR effect occurs at much higher temperatures than expected in the framework of the oxygen chemisorption model. The EPR intensity of barium and titanium vacancies increases after oxidation at T > 1000°C. A substantial PTCR effect is achieved only after prolonged annealing of the ceramic in air at temperatures as high as 1200–1250°C. This result suggests that the PTCR effect in polycrystalline BaTiO₃ is associated with interfacial segregation of cation vacancies during oxidation of the grain boundaries.     

High-Temperature Transmission Electron Microscopy and X-Ray Powder Diffraction Studies of Polymorphic Phase Transitions in Ba4Nb2O9

Polymorphic phase transitions in Ba₄Nb₂O₉ were studied by thermal analyses, high-temperature transmission electron microscopy and X-ray powder diffractometry. Two stable polymorphs were isolated, low-temperature α-modification and high-temperature γ-modification, with the endothermic phase transition at 1176°C. The α→γ transformation is accompanied by the formation of a 120° domain structure, which is a consequence of hexagonal→orthorhombic unit cell reconstruction. Reheating the presintered γ-Ba₄Nb₂O₉ results in the formation of a metastable γ'-modification (formerly known as β-polymorph) in the temperature range between 360° and 585°C, before the γ→α transformation at 800°C. Above ∼490°C Ba₄Nb₂O₉ becomes moderately sensitive to a loss of BaO. In air the surface of Ba₄Nb₂O₉ grains decomposes to nanocrystalline Ba₅Nb₄O₁₅ and BaO, which instantly reacts with atmospheric CO₂ to form BaCO₃. Surface reaction delays γ→α transformation up to 866°C in air. In vacuum the loss of BaO is even more enhanced and consequently the formation of minor Ba₃Nb₂O₈ phase is observed above 1150°C.     

The Optical Properties and Band Gap Energy of Nanocrystalline La0.4Sr0.6TiO3 Thin Films

The effects of microstructure on the optical properties of La_0.4Sr_0.6TiO₃ thin films were investigated. Dense films with the thickness of ∼200 nm and grain size 14–30 nm were produced on monocrystalline sapphire substrates by using a polymeric precursor spin coating technique at annealing temperatures under 800°C. X-ray data showed the formation of a single-phase cubic perovskite-type structure similar to undoped SrTiO₃ for annealing temperatures >500°C. The results of optical measurements showed that the optical spectra varied with the change of the grain size. From these data, the absorption coefficients were calculated and the band gap energy determined. In agreement with the quantum confinement model, it was shown that the band gap energy increased as the grain size decreased.     

Characterization of Photoluminescent (Y1–xEux)2O3 Thin Films Prepared by Metallorganic Chemical Vapor Deposition

The purpose of this study was to identify and correlate the microstructural and luminescence properties of europium-doped Y₂O₃ (Y_{1– x} Eu _x )₂O₃ thin films deposited by metallorganic chemical vapor deposition (MOCVD), as a function of deposition time and temperature. The influence of deposition parameters on the crystallite size and microstructural morphology were examined, as well as the influence of these parameters on the photoluminescence emission spectra. (Y_{1– x} Eu _x )₂O₃ thin films were deposited onto (111) silicon and (001) sapphire substrates by MOCVD. The films were grown by reacting yttrium and europium tris(2,2,6,6-tetramethyl–3,5-heptanedionate) precursors with an oxygen atmosphere at low pressures (5 torr (1.7 × 10³ Pa)) and low substrate temperatures (500°–700°C). The films deposited at 500°C were smooth and composed of nanocrystalline regions of cubic Y₂O₃, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600°C developed, with increasing deposition time, from a flat, nanocrystalline morphology into a platelike growth morphology with [111] orientation. Monoclinic (Y_{1– x} Eu _x )₂O₃ was observed in the photoluminescence emission spectra for all deposition temperatures. The increase in photoluminescence emission intensity with increasing postdeposition annealing temperature was attributed to the surface/grain boundary area-reduction effect.     

Melt Processing of YBa2Cu3O7-x

Sintering YBa₂Cu₃O_{7- x} bulk forms at 1050°C followed by annealing at 980°C causes the development of a thick oriented surface layer (Lotgering factor = 0.7). The thickness of the layer depends on the thermal treatment, which is a two-step sintering process. Firing at 1050°C for 2.5 h followed by 30 h at 980°C leads to the development of a 0.1-mm-thick surface layer, with clear indication that longer annealing would result in a thicker film. Some orientation develops during un-axial compaction of the powders. Lotgering orientation factor calculation from X-ray diffraction analysis. SEM, and TEM were used to characterize the microstructure of these samples. T _c was similar to that of conventionally processed high-density samples, between 83 and 87 K. Some thermal treatments resulted in samples that displayed high resistivity above T _c , possibly caused by segregation of Cu to the grain boundaries.     

Fusion and Vaporization Characteristics of ZrTe3O8

The only intermediate phase stable in air in the system ZrO₂−TeO₂ is ZrTe₃O₈ with a cubic, distorted, fluorite-type structure. The compound melts congruently at 1014°± 5°C to an unstable liquid. Vaporization occurs, with loss of TeO₂, at high temperatures with an activation energy of 64 kcal per mole of ZrTe₃O₈. No glass formation was observed in the system.