n－GaAsTi／Mo／Ti／Au中肖特基势垒接触稳定性的研究

对Ｔｉ／Ｍｏ／Ｔｉ／Ａｕ作为栅金属的ＧａＡｓＭＥＳＦＥＴ进行了高温反偏（ＨＴＲＢ）、高压反偏（ＨＲＢ）、高温正向大电流（ＨＦＧＣ）、高温存贮（ＨＴＳ）４种不同的应力试验。通过ＨＲＢ，φｂ从０．６４ｅＶ减少到０．６２ｅＶ，理想因子ｎ略有增大，ＨＴＳ试验中φｂ从０．６７ｅＶ增加到０．６９ｅＶ。分析表明，这归因于界面氧化层的消失，以及Ｔｉ与ＧａＡｓ的反应；ＨＦＧＣ试验结果表明，其主要的失效模式为烧毁，同时，ＳＥＭ观察中也有电徙动及断栅现象发生。ＡＥＳ分析表明，应力试验后的样品，其肖特基势垒接触界面出现模糊，有明显的互扩散和反应发生。     

Multimodal Expression—Synthesis of Facial Emotion,Mouth Movement and Voice

ＭｕｌｔｉｍｏｄａｌＥｘｐｒｅｓｉｏｎ—ＳｙｎｔｈｅｓｉｓｏｆＦａｃｉａｌＥｍｏｔｉｏｎ，ＭｏｕｔｈＭｏｖｅｍｅｎｔａｎｄＶｏｉｃｅＺＨＡＮＧＪｉｎｇＧＡＯＷｅｎＣＨＥＮＸｉｌｉｎ（张晶）（高文）（陈熙霖）（Ｄｅｐｔ．ｏｆＣｏｍｐｕｔｅｒＳｃｉｅｎ...     

RESEARCH OF FILM THICKNESS DURING DRAWING PROCESS LUBRICATED WITH O／W EMULSIONS~＋

ＲＥＳＥＡＲＣＨＯＦＦＩＬＭＴＨＩＣＫＮＥＳＳＤＵＲＩＮＧＤＲＡＷＩＮＧＰＲＯＣＥＳＳＬＵＢＲＩＣＡＴＥＤＷＩＴＨＯ／ＷＥＭＵＬＳＩＯＮＳ~＋￥ＹａｎＨｅｎｇｚｈｉ；ＺｈｏｎｇＪｕｅ（ＤｅｐａｒｔｍｅｎｔｏｆＭｅｃｈａｎｉｃａｌＥｎｇｉｎｅｅｒｉｎｇ?..     

RE—Sb—Ba孕育处理提高机床导轨性能的研究

在碳当量ＣＥ３．７％～４．０％范围内,研究了ＲＥ－Ｓｂ－Ｂａ复合孕育处理对机床导轨性能的影响。试验结果表明,采用ＲＥ－Ｓｂ－Ｂａ复合孕育处理较高碳当量（ＣＥ３．７～４．０％）铁水,比原工艺７５ＳｉＦｅ孕衣较低碳当量（ＣＥ３．２％～３．４％）相比,能够获得较好的性能,尤其是导轨表面硬度的均匀性,铸态硬度有≥ＨＢ２００,淬火态硬度大于ＨＲＣ４５,沿导轨面硬度落差只有ＨＲＣ４～５;且新工艺成本较低,简单     

P—GeSi／P—Si探测器的研制

采用ＭＢＥ法在Ｓｉ衬底上生长ＧｅＳｉ异质结,制成ＧｅＳｉ／Ｓｉ异质结探测器。测得 反向击穿电压为１５Ｖ左右,光响应为０．５ｍＡ。     

RE-Sb-Ba孕育处理提高机床导轨性能的研究

在碳当量 ＣＥ３．７％～４．０％范围内,研究了 ＲＥ－Ｓｂ－Ｂａ复合孕育处理对机床导轨性能的影响。试验结果表明,采用ＲＥ－Ｓｂ－Ｂａ复合孕育处理较高碳当量（ＣＥ ３．７％～４．０％）铁水,比原工艺 ７５ＳｉＦｅ孕育较低碳当量（ＣＥ ３．２％～３．４％）相比,能够获得较好的性能,尤其是导轨表面硬度的均匀性,铸态硬度≥ＨＢ２００,淬火态硬度大于ＨＲＣ４５,沿导轨面硬度落差只有ＨＲＣ４～５;且新工艺成本较低,简单易行,大大减少了废钢用量．炉料管理相对简单,产品质量稳定。     

On Certain Classes of p-Valent Functions

ＯｎＣｅｒｔａｉｎＣｌａｓｓｅｓｏｆｐ－ＶａｌｅｎｔＦｕｎｃｔｉｏｎｓ￥Ｍ．Ｋ．ＡＯＵＦ（Ｄｅｐｔ．ｏｆＭａｔｈ．ＦａｃｕｌｔｙｏｆＳｃｉｅｎｃｅＵｎｉｖ．ｏｆＭａｎｓｏｕｒａ，Ｍａｎｓｏｕｒａ，Ｅｇｙｐｔ）Ａｂｓｔｒａｃｔ：Ｔｈｅｒｅａｒｅｍａｎｙ...     

ANAPPROACHTOSOMEPROBLEMSOFTECHNOLO

ＡＮＡＰＰＲＯＡＣＨＴＯＳＯＭＥＰＲＯＢＬＥＭＳＯＦＴＥＣＨＮＯＬＯＧＩＣＡＬＭＩＮＥＲＡＬＯＧＹＳＴＵＤＹＯＮＴＨＥＯＲＥＯＦＡＳＳＯＣＩＡＴＥＤＧＡＩＮＥＬＥＭＥＮＴＺｈａｏＹｉｑｉＣｈｅｎＸｉｈｕａ（ＤｅｐａｒｔｍｅｎｔｏｆＧｅｏｌｏｇｙ，Ｃｅ...     

海外需求

海外需求编号：Ａ９７０９３００１行业：电子国别／地区：ＡＵＳＴＲＡＬＩＡ（澳大利亚）厂商：ＦＦＥＢＵＩＬＤＩＮＧＳＥＲＶＩＣＥＳ地址：６ＨＯＰＥＳＴ，ＥＲＭＩＮＧＴＯＮＮＳＷ２１１５电话：０２－９８５８８４４４传真：０２－９８７４６３０６进口：灭火器...     

GEOCHEMIC ALEVIDENCES OF METALLOGENIC MATERIALS′SOURCE IN XIONG′ERSHAN Au-Ag OREFIELD,HENAN

ＧＥＯＣＨＥＭＩＣＡＬＥＶＩＤＥＮＣＥＳＯＦＭＥＴＡＬＬＯＧＥＮＩＣＭＡＴＥＲＩＡＬＳ′ＳＯＵＲＣＥＩＮＸＩＯＮＧ′ＥＲＳＨＡＮＡｕ－ＡｇＯＲＥＦＩＥＬＤ，ＨＥＮＡＮＤａｉＴａｇｅｎＧｕｏＢａｏｊｉｎｇＰｅｎｇＪｉａｎｔａｎｇＧａｏＧｕａｎｇｍｉｎ（...     

高温大电流应力对TiAl/GaAs和TiPtAu/GaAs Schottky二极管Richardson图的影响

研究了高温和大电流应力对 ＴｉＡｌ／ ＧａＡｓ和 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管 Ⅰ～ Ⅴ特性及对 Ｒｉｃｈａｒｄｓｏｎ图 的影响．研究发现,随着应力时间的增加,在 Ｒｉｃｈａｒｄｓｏｎ图上,对ＴｉＡｌ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度快速降低, Ｒｉｃｈａｒｄｓｏｎ常数和二极管的面积之积 ＳＡ~＊也快速减少,而 ＴｉＰｔＡｕ／ ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管势垒高度和 ＳＡ~＊先快速增 加,后趋于稳定常数．在Ⅰ～Ⅴ曲线上,ＴｉＡｌ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ二极管反向饱和电流增加,ＴｉｐｔＡｕ／ＧａＡｓ Ｓｃｈｏｔｔｋｙ 二极管反向饱和电流先快速减少,后趋于常数．这是由于在金属／ ＧａＡｓ界面形成了金属间化合物的结果．     

Ni/AlGaN/GaN结构中肖特基势垒温度特性

通过I-V测量研究了AlGaN/GaN异质结构上的肖特基接触与温度的关系.在室温下肖特基势垒高度为0.75 eV,理想因子为2.06.温度升高,肖特基势垒高度增加,理想因子下降,主要原因是受异质结和二维电子气的影响.在正向电流为1 mA时,室温下的正向电压为1.65 V,从室温到300℃范围内正向电压的温度系数为-1.6 mV/℃.     

A generalized Norde plot for reverse biased Schottky contacts

When a metal makes intimate contact with a semiconductor material,a Schottky barrier may be created.The Schottky contact has many important applications in the integrated circuit (IC) electronics field.The parameters of such contacts can be determined from their current-voltage (Ⅰ-Ⅴ) characteristics.The literature contains many proposals for extracting the contact parameters using graphical methods.However,such methods are generally applicable only to contacts with a forward bias,whereas many Schottky contacts actually operate under a reverse bias.Accordingly,the present study proposed a generalized reverse current-voltage (Ⅰ-Ⅴ) plot which enables the series resistance,barrier height,and ideality factor of a reverse biased Schottky contact to be extracted from a single set of Ⅰ-Ⅴ measurements.A theoretical derivation of the proposed approach was presented and a series of validation tests were then performed.The results show that the proposed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.     

高温下n-GaN/Ti/Al/Ni/Au欧姆接触的可靠性研究

研究了高温工作环境下Ti/Al/Ni/Au(15 nm/220 nm/40 nm/50 nm)四层复合金属层与n-GaN(N_d= 3.7×10~(17)cm~(-3),N_d=3.0×10~(18)cm~(-3))的欧姆接触特性,试验结果标明,当测量温度低于300℃时,存储时间为0～24h,其接触电阻率基本不变,表现出良好的温度可靠性;分别经过300、500℃各24h高温存储后,其欧姆接触发生了较为明显的退化,且不可恢复.接触电阻率均随测量温度的增加而增大,掺杂浓度越高,其接触电阻率随测量温度的升高缓慢增加;重掺杂样品的n-GaN/Ti/Al/Ni/Au欧姆接触具有更高的高温可靠性。     

Al-Al2O3-铁磁金属隧道结界面的表征

用梯形势垒模型计算偏置Al Al2 O3 铁磁金属 (Fe ,Co ,Ni和Ni80 Fe2 0 )隧道结的I V曲线 ,通过与结在 77K温度下的实验I V曲线拟合决定了结的势垒参数 .拟合结果表明 ,对于上电极为不同铁磁金属的 4种结 ,Al Al2 O3 界面处的势垒高度差别很小 ,而Al2 O3 Fe ( Co , Ni, Ni80 Fe2 0 )界面处的势垒高度以及势垒宽度则分别为 1 72eV ,1 76eV ,1 86eV ,1 6 9eV以及 1 7 6 0 ,1 1 2 2 ,1 2 2 8 ,1 3 4 0 .势垒高度和宽度因铁磁金属上电极不同而改变的现象可归因为铁磁金属原子向Al2 O3 势垒层渗透 ,以及在界面区域铁磁金属原子与Al2 O3 的氧化反应导致附加氧化势垒层的形成 .     

钛表面处理对增强钛/瓷结合强度的影响

为了提高钛/瓷结合强度,通过不同方法对钛表面进行处理,研究了钛表面处理后钛/瓷界面组织及结合强度。试验结果表明,烤瓷前进行钛表面喷砂处理,对增强钛/瓷结合强度的影响并不显著,但对抑制钛/瓷界面裂纹的扩展起到积极作用;钛表面预氧化处理能够在钛表面形成一层均匀的氧化膜,使参与界面反应的TiO2增多,反应层增厚,但预氧化温度对钛/瓷结合强度有重要影响;钛表面磁控溅射Zr中间层能够抑制钛表面生成过厚氧化层,而中间层厚度对钛/瓷结合强度也有较大影响。     

Interfacial microstructure of Cu Cr/1Cr18Ni9Ti bi-metal materials and its effect on bonding strength

The Cu Cr/1Cr18Ni9 Ti bi-metal materials were prepared by the solid-liquid bonding method. The microstructures, mechanical properties and formation mechanism of the bonding interface were studied. The results show that there exists a serrated transition layer with a certain width at the interface of Cu Cr/1Cr18Ni9 Ti bi-metal materials, and the transition layer consists of Fe-based and Cu-based solid solutions. The elastic modulus and hardness reach the maximum values at the interface closing to the 1Cr18Ni9 Ti zone. The bonding temperature has a significant effect on the width and morphology of the transition layer. The interfacial bonding strength is at least 30% higher than that of the Cu Cr alloy, and the tensile fracture occurs at the side of the Cu Cr alloy rather than at the bonding interface.     

Interfacial reaction mechanism of TiBw/Ti6Al4V composites and Inconel 718 alloys by GTAW heat transmission

A good joint of Ti Bw/Ti6Al4V composites and Inconel 718 alloys was obtained by Gas Tungsten Arc Welding(GTAW) heat transmission. The interfacial reaction mechanism of joint was investigated and analyzed in details. Owing to the heat input applied on the surface of Ti Bw/Ti6Al4V composites, a solid-state reaction layer appeared at the interface of Ti Bw/Ti6Al4 V composites to Inconel 718 alloys. The thickness of the reaction layer was obviously increased with increasing heat input.Developing of reaction layer mainly depended on the diffusion of elements of Ti and Ni through the interface during welding to form solid solutions and intermetallic compounds(IMCs). The reaction layer can be divided into Ti-rich zone(layer 2) and Nirich zone(layer 1). In Ni-rich zone, relatively coarse dendrites were the predominant, however, more brittle IMCs like Ti2Ni were found in the Ti-rich zone. Micro hardness of reaction layer was much higher than that of base metal. While a slight decrease of hardness was found between Ti-rich zone and Ni-rich zone due to the formation of TiNi.     

Ti表面改性Al涂层及其抗氧化性能

为了提高钛材的抗高温氧化性能,利用电弧喷涂工艺方法在工业纯钛表面制备了纯Al涂层,对喷涂态纯Al涂层分别进行炉中加热及激光重熔改性处理,以得到具有一定抗高温氧化性能的Ti-Al金属间化合物涂层.对改性处理后的试件进行了800℃/60 h的氧化试验.结果表明,经750℃/5 h炉中加热改性处理后,钛基体表面可形成厚约300μm的TiAl_3金属间化合物层,而经激光重熔改性处理后,钛基体表面形成的TiAl_3金属间化合物层较薄.经高温氧化试验后,炉中加热改性Al涂层的微观组织形貌未发生明显变化,而激光重熔改性Al涂层的微观组织形貌变化较为明显.相比于激光重熔改性处理,经炉中加热改性处理后Al/Ti试件的抗高温氧化性能更佳.