Effects of initial structure on the shape memory properties of Ti50Ni25Cu25 ribbons

The effect of annealing temperature and initial structure (amorphous and fully crystallized) on shape memory properties of Ti₅₀Ni₂₅Cu₂₅ melt-spun ribbons was studied by using DSC and thermomechanical analyzer (TMA). M_s of the annealed ribbons increased with the annealing temperature below 550 °C. It decreased with annealing temperature above 550 °C. The fully crystallized as-spun ribbon showed the highest shape recovery strain under 45 MPa. With the increase of annealing temperature the recovery strain of the two ribbons decreased significantly.     

Microstructure, martensitic transformation and superelasticity of Ti49.6Ni45.1Cu5Cr0.3 shape memory alloy

The aim of this study is to investigate the microstructure, martensitic transformation behavior, shape memory effect and superelastic property of Ti_49.6Ni_45.1Cu₅Cr_0.3 alloy, with Cu and Cr substituting for Ni. After annealing, the alloy showed single step A-M/M-A transformations within the whole annealing temperature range of 623 K to 1273 K even in the presence and Ti₂(Ni, Cu) precipitates. With the increase of the annealing temperature, the transformation temperatures exhibited three stages: increasing from 623 K to 873 K, decreasing from 873 K to 1023 K and unchanging from 1023 K to 1273 K. Meanwhile, the critical stress for stress induced martensitic (SIM) transformation decreased to a minimum value and increased after that, exhibiting a V shape curve. The alloy annealed at 623, 773 and 923 K exhibited shape recovery ratio more than 90% when the deformation strain was below 20%.     

Development of random access memory in Nd0.7Ca0.3MnO3/YBa2Cu3O7 heterostructure

The effects of electrode on the resistive switching in Nd_0.7Ca_0.3MnO₃(NCMO)/YBa₂Cu₃O₇(YBCO) heterostructure are investigated at room temperature. For Cu/NCMO/YBCO, resistance can be switched on-and-off from a high- to low-resistance state at a steady ratio of 25% with a pulsed-voltage of ± 3 V. On the other hand, a giant resistance-change as large as 1350% is observed with ± 5 V for Ag/NCMO/YBCO with a fast decay down to 550%. Our experimental results show clear evidences that the nature of interfaces can be modified by the electric field and it dictates the resistive switching behavior of these heterostructure devices, which are the potential candidates for the random access memory.     

Ba2Ti9O20-Ba1.85Sm4.1Ti9O24 layered dielectric resonators with adjustable effective dielectric constant

The layered dielectric resonator structures composed of Ba₂Ti₉O₂₀ (BTO) and Ba_1.85Sm_4.1Ti₉O₂₄ (BSTO) ceramic pellets were introduced to design new microwave dielectric materials with adjustable dielectric constant between 50 and 70. Good combination of microwave dielectric properties (?_r,eff = 50 ~ 70, Qf = 11,700-19,100 GHz and τ_f = − 4.3 to − 1.5 ppm/°C) was obtained by the present approach, and such combination could be optimized by adjusting the volume fraction of BSTO and stacking scheme. For practical applications, the BTO and BSTO layers could be bonded by low-loss adhesive, and the effects of the adhesive on the microwave dielectric properties were limited.     

Crystal structure and ferroelectric properties of Ca(Cu3−xMx)Ti4O12 (M = Fe and Ni) ceramics

M-substituted Ca(Cu_3−xM_x)Ti₄O₁₂ (CCMTO) ceramics, where M = Fe and Ni, were synthesized and the influence of M substitutions for Cu on the crystal structure and ferroelectric properties of CCMTO ceramics were investigated in this study. From the variations in the lattice parameters of CCMTO ceramics, the solubility limit of Ni substitution for Cu in CaCu_3−xNi_xTi₄O₁₂ (CCNTO) ceramics was x = 0.2, whereas that of CaCu_3−xFe_xTi₄O₁₂ (CCFTO) ceramics was x = 0.05. The crystal structural analysis of CCMTO ceramics revealed that the single phase of CCMTO ceramics belongs to the I23 non-centrosymmetric space group of I23; as a result, the P_r and E_c values of CCFTO ceramics at x = 0.05 were 1.8 μC/cm² and 40 kV/cm, respectively. The ferroelectric behavior of CCMTO ceramics by the M substitutions for Cu may be related to the displacement of a Ti⁴⁺ cation in the TiO₆ octahedra and tilting of the Ti–O–Ti angle because of the non-centrosymmetric space group.     

Phase transformation,thermoelastic and magnetic properties of Ni50Mn30Ga20−xCux ferromagnetic shape memory alloys

Effect of addition of Cu on phase transformation temperatures, enthalpy and entropy changes, Curie temperature, magnetization saturation were investigated in Ni–Mn–Ga ferromagnetic shape memory alloy. The results show that the Ni₅₀Mn₃₀Ga_20−xCu_x alloys exhibit thermoelastic martensitic transformation. The martensitic and reverse martensitic transformation temperatures, enthalpy and entropy changes and thermal hysteresis increase with increase of Cu content. Martensite structure changes from 7 M with 0–0.5 at.% Cu to non-modulated T martensite when the content of Cu is more than 0.5 at.%. In addition, the Curie temperature almost remains unchanged at low-Cu content and subsequently decreases obviously. Magnetization saturation of alloys decrease with increasing Cu content since it is sensitive to ordered atomic arrangement.     

Effect of graphite addition on martensitic transformation and damping behavior of NiTi shape memory alloy

In this investigation, the effect of graphite addition on martensitic transformation and damping behavior of Ni₅₀Ti₅₀ (at.%) shape memory alloy has been studied. It is found that martensitic transformation temperature decreases obviously with the addition of graphite. Microstructural observation shows that TiC precipitates and forms whiskers when the carbon content is increased beyond ~ 0.6%. With the increase of graphite content, the damping capacity during reverse transformation increases initially and then decreases while the damping capacity of full martensite is remarkably improved by the addition of graphite particles. It is proposed that the enhancement of damping capacity can be ascribed to the high damping capacity of graphite itself, as well as, the increase of the amount of interface between martensite and austenite can be beneficial to the damping capacity.     

Microstructure and martensitic transformation of Ti49Ni51 − xHfx high temperature shape memory alloys

In present work, the microstructure and martensitic transformation of Ti₄₉Ni_51 − xHf_x (x = 3-15) alloys were studied. The microstructure of Ti₄₉Ni_51 − xHf_x alloys consists of B19′ martensite and (Ti,Hf)₂Ni phase at room temperature. The martensitic transformation behavior is characterized by a single-stage transformation. With increasing Hf content, the transformation temperature increases from 75 to 279 °C resulting from the reduced valence electron concentration, indicating that the replacement of Hf for Ni is effective in increasing the transformation temperatures. The results suggest that the Ti₄₉Ni_51 − xHf_x shape memory alloy is one of potential candidates for high temperature applications.     

Effect of annealing on characteristics of Ni48Fe12Cr40/Ni80Fe20 bilayer films deposited on Si(1 0 0)/SiO2 by electron beam evaporation

Ni₄₈Fe₁₂Cr₄₀(7 nm)/Ni₈₀Fe₂₀(40 nm) bilayer films and Ni₈₀Fe₂₀(40 nm) monolayer films were deposited at ambient temperature on Si(1 0 0)/SiO₂ substrates by electron beam evaporation. The effect of annealing on the structure, composition, magnetization and magnetoresistance of the Ni₄₈Fe₁₂Cr₄₀/Ni₈₀Fe₂₀ bilayer films was investigated. The structure of the Ni₄₈Fe₁₂Cr₄₀/Ni₈₀Fe₂₀ bilayer films remains stable for annealing temperature up to 280 °C. For the as-deposited bilayer film the introducing of the Ni₄₈Fe₁₂Cr₄₀ underlayer promotes both the [1 1 1] texture and grain growth in the Ni₈₀Fe₂₀ layer. The annealing promotes the grain growth of the Ni₄₈Fe₁₂Cr₄₀/Ni₈₀Fe₂₀ bilayer films when the annealing temperature exceeds 280 °C. After annealing at a temperature over 280 °C, Cr atoms inside the Ni₄₈Fe₁₂Cr₄₀ layer diffuse into the Ni₈₀Fe₂₀ layer and segregate on the surface of the Ni₈₀Fe₂₀ layer. The Ni₄₈Fe₁₂Cr₄₀ underlayer as a seed layer can enhance the anisotropic magnetoresistance ratio of the Ni₈₀Fe₂₀ layer at a annealing temperature up to 280 °C compared with Ni₈₀Fe₂₀ monolayer film. After annealing at a temperature over 280 °C, however, the anisotropic magnetoresistance ratio of the Ni₈₀Fe₂₀ monolayer films exceeds that of the Ni₄₈Fe₁₂Cr₄₀/Ni₈₀Fe₂₀ bilayer films. For all annealing temperatures, the coercivities of the Ni₄₈Fe₁₂Cr₄₀/Ni₈₀Fe₂₀ bilayer films are smaller than those of the Ni₈₀Fe₂₀ monolayer films.     

Effect of Zr content on mechanical properties of Ti-Ni-Zr shape memory alloy films prepared by dc magnetron sputtering

To further understanding of the effect of Zr content on the shape memory behavior of ternary Ti-Ni-Zr alloy films, ternary alloy films were deposited with various Zr contents using triple source dc magnetron sputtering. Deposited films annealed at 700 °C showed martensite transformation accompanied with shape memory behavior. Martensitic transformation start (Ms) temperature of the ternary alloy film was found to increase with increasing Zr content for a Zr content higher than 10 at%. The highest Ms temperature attained was ∼170 °C for a Zr content of 19.5 at%. Critical stress against plastic deformation was found to increase with increasing Zr content up to 10 at%. Although further increase of Zr content caused embrittlement, the Ti_32.3Ni_48.2Zr_19.5 film showed a shape memory effect with a recoverable strain of ∼1.3% under a constant stress of 250 MPa. This indicates that the Ti-Ni-Zr alloy film is a promising candidate for cantilever type micro-actuators.     

Composition dependence of optical constants in ferroelectric Ba(Ti1 − x,Nix)O3 thin films by optical transmittance technique

Ba(Ti_1 − x,Ni_x)O₃ ferroelectric thin films with perovskite structure are prepared on fused quartz substrates by a sol-gel process. Optical transmittance measurements indicate that Ni-doping has an obvious effect on the energy band structure of BaTiO₃. It has been found that the refractive index n, extinction coefficient k, and band gap energy E_g of the films are functions of the film composition. The E_g of Ba(Ti_1 − x,Ni_x)O₃ decreases approximately linearly as the Ni content increases, which is attributed to the decline of conduction band energy level with increasing the Ni content. On the other hand, n and k both increase linearly with increasing the Ni content because of the increase of packing density. These results indicate that thin films might have potential applications in BaTiO₃-based thin-film optical devices.     

Effect of Si3N4-particles addition in Ag-Cu-Ti filler alloy on Si3N4/TiAl brazed joint

A novel composite filler alloy was developed by introducing Si₃N_4p (p = particles) into Ag-Cu-Ti filler alloy. The brazing of Si₃N₄ ceramics and TiAl intermetallics was carried out using this composite filler alloy. The typical interfacial microstructure of brazed joints was: TiAl/AlCu₂Ti reaction layer/Ag_(s,s) + Al₄Cu₉ + Ti₅Si_3p + TiN_p/TiN + Ti₅Si₃ reaction layer/Si₃N₄. Effects of Si₃N_4p content in composite filler alloy on the interfacial microstructure and joining properties were investigated. The distribution of Ti₅Si_3p and TiN_p compounds in Ag-based solid solution led to the decrease of the mismatch of the coefficient of thermal expansion (CTE) and the Young's modulus between Si₃N₄ and TiAl substrate. The maximum shear strength of 115 MPa was obtained when 3 wt.% Si₃N_4p was added in the composite filler alloy. The fracture analysis showed that the addition of Si₃N_4p could improve the mechanical properties of the joint.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

Microscale meshes of Ti3O5 nano- and microfibers prepared via annealing of C-doped TiO2 thin films

A new technique to produce microscale Ti₃O₅ nano- and microfiber meshes is proposed. When a 3 wt% carbon-doped TiO₂ film on Si(1 0 0) was annealed at 1000 °C in wet nitrogen (0.8%H₂O), the amorphous TiO₂ phase gave rise to crystalline phases of λ-Ti₃O₅ (75%) and rutile + trace of TiO_2−xC_x (25%). From Raman and FTIR Spectroscopy results, it was concluded that rutile is formed at the inner layer located at the interface between the mesh and the Si that was located away from the surface such that the meshes of nano- and microfibers are predominantly composed of Ti₃O₅ grown from the reaction of rutile with Si to form Ti₃O₅ and SiO₂. On the other hand, it was noteworthy that the microscale mesh of nano- and microfibers showed increased photoluminescence compared with amorphous TiO₂. The PL spectrum which had a broad band in the visible spectrum, fitted as three broad Gaussian distributions centered at 571.6 nm (∼2.2 eV), 623.0 nm (∼2.0 eV) and 661.9 nm (∼1.9 eV).     

Anisotropic grain growth of Bi4Ti3O12 in molten salt fluxes

Bismuth titanate (Bi₄Ti₃O₁₂) platelets were obtained by the molten salt synthesis method in NaCl-KCl and Na₂SO₄-K₂SO₄ fluxes, using an amorphous Bi₄Ti₃O₁₂ precursor and a mechanically mixed Bi₂O₃-TiO₂ mixture as the starting materials. It was found that the synthesizing temperature, salt species and starting materials could significantly affect the crystallization habit and morphology of Bi₄Ti₃O₁₂ platelets. Under the same processing conditions (i.e. in Na₂SO₄-K₂SO₄ flux at 1000 °C), the Bi₄Ti₃O₁₂ platelets synthesized from the Bi₂O₃-TiO₂ mixture generally showed a smaller particle size than those synthesized using the amorphous Bi₄Ti₃O₁₂ precursor. The Bi₄Ti₃O₁₂ platelets prepared in the chloride flux were faceted along either (0 0 1) or (1 1 2) planes, while those prepared in the sulfate flux were solely (0 0 1) faceted. The former system also had smaller particle size than the latter. Furthermore, the salt content and the addition of plate-like Bi₄Ti₃O₁₂ seeds in the amorphous Bi₄Ti₃O₁₂ precursor showed a strong influence on the particle size of the synthesized Bi₄Ti₃O₁₂ platelets. The particle size of Bi₄Ti₃O₁₂ platelets prepared in the sulfate flux decreased as the mole ratio of the sulfate salts to Bi₄Ti₃O₁₂ was increased from 7.9 to 23.7. And the addition of 10 wt.% plate-like Bi₄Ti₃O₁₂ seeds into the amorphous Bi₄Ti₃O₁₂ precursor led to a significant increase in the particle size of the resulting Bi₄Ti₃O₁₂ platelets.     

The low temperature synthesis and characterization of Bi3.25La0.75Ti3O12 powder by hydroxide coprecipitation in aqueous medium

The fine powders of Bi_3.25La_0.75Ti₃O₁₂ (BLT) were prepared by coprecipitaton method in aqueous medium at low temperature. The differential thermal analysis (DTA), thermo-gravimetric analysis (TG) and X-ray diffraction (XRD) were employed to evaluate the phase formation of BLT and TEM was used to characterize and observe the particle size and morphology of BLT powder obtained. The results show that the bismuth layer perovskite phase of BLT can begin to form at as low as 500 °C by the coprecipitation method. When the precipitates obtained were calcined at 600 °C for 2 h, the mono-phase and perfect BLT powder was synthesized. The BLT powder obtained consists of irregular or plate-like particles which are less than about 100 nm and is nearly aggregate free.     

In situ synthesis of TiB whisker reinforcements in the joints of Al2O3/TC4 during brazing

Al₂O₃ ceramic has been successfully joined to Ti-6Al-4V alloy with Ag-Cu-Ti-B mixed powder. The TiB whiskers in the brazing layer were in situ synthesized during brazing. The effects of B content in reactant on the phase composition, microstructure and shear strength of the joints were investigated using SEM, EDS, and shear test. Results indicate that B content in the filler has a great impact upon the microstructure of the joints via exerting an influence on the volume fraction of in situ synthesized TiB whiskers. When the TiB content is 40 vol.%, the shear strength reaches the maximum value of 77.9 MPa. The higher content of TiB (≥40 vol.%) depresses the shear strength of the joints due to the interfacial thermal stress cannot be relaxed. Reaction phases (Ti₃Cu₂AlO, Ti₂Cu, Ti₂(Cu, Al), Ti(Cu, Al) and Ti₃Al) appear in the joint, moreover, as the volume fraction of TiB increase, Ag (s.s) and Ti(Cu, Al) distribute more uniform and fine in the brazing layer, as well as TiB whiskers mainly distribute in them. Eventually, Ti₃Cu₂AlO, TiB and TiB₂ firstly generate based on the thermodynamic analysis, and in excessive Ti circumstances, TiB whiskers remain in the brazing alloy.     

Precipitation of second phases in aged Ni rich NiTiRe shape memory alloy

Abstract

This study investigated the effect of aging on the structure and precipitation of second phases of Ni₅₂Ti_47·7Re_0·3 shape memory alloys. The alloy was solutionised at 1000°C for 24 h before aging at various temperatures ranging from 300 to 600°C for 3 h. The matrix phase in both solutionised and aged specimens was martensite. Ti₂Ni phase was also present in the microstructure of both solutionised and aged specimens and its volume fraction decreased as the aging temperature increased. Ni₄Ti₃ phase began in appearance by increasing aging temperature to 400°C. Ni₄Ti₃ precipitates had lenticular and non-geometry shapes. Aging at 600°C led to precipitation of Ni₃Ti phase in the microstructure. This precipitated phase formed in white blocky shapes. Ti/Ni ratio increased and/or Ni content decreased in the matrix with increasing in aging temperature.     

Properties of La-substituted Na0.5Bi4.5Ti4O15 ferroelectric thin films

Ferroelectric Na_0.5La_0.5Bi₄Ti₄O₁₅ (NaLaBTi) thin films were prepared by a chemical solution deposition method. The NaLaBTi thin films annealed at 750 °C under oxygen atmosphere were randomly oriented polycrystalline. Electrical properties of the NaLaBTi thin films were compared to Na_0.5Bi_4.5Ti₄O₁₅ thin films and better properties were observed in the NaLaBTi thin films. Remnant polarization (2P_r) and coercive electric field (2E_c) were 43 µC/cm² and 204 kV/cm at an applied electric field of 478 kV/cm, respectively. Leakage current density was 1.95 × 10^− 6 A/cm² at 100 kV/cm. Dielectric constant and dielectric loss were 805 and 0.05 at 1 kHz, respectively. Switchable polarization was suppressed by 15% after 1.44 × 10¹⁰ switching cycles.     

Effect of annealing on the characteristics of Au layers grown on the high-temperature deposited Ni50Fe50 layers

80 nm-thick Ni₅₀Fe₅₀ layers were sputter-deposited on glass substrates at 400 °C and then Au layers were sputter-deposited on the Ni₅₀Fe₅₀ layers. The Au/Ni₅₀Fe₅₀ bilayer films were annealed in a vacuum of 5×10⁻⁴ Pa from 250 to 450 °C for 30 min or 90 min. The characteristics of the Au layers were studied by Auger electron spectroscopy, field emission scanning electron microscopy, X-ray diffraction and a four-point probe technique. When the annealing temperature reaches 450 °C, Fe and Ni atoms diffuse markedly into the Au layer and the Fe content is more than the Ni content. When the annealing temperature is lower than 450 °C, the grain size of the Au layers does not change markedly with annealing temperature. However, as the annealing temperature reaches 450 °C, the annealing promotes the grain growth of the Au layer. As the annealing temperature exceeds 300 °C, the resistivity of the bilayer films increases with increasing annealing temperature. The diffusion of Fe and Ni atoms into the Au layer results in an increase in the resistivity of the annealed bilayer film. Large numbers of Fe and Ni atoms diffusing into the Au layer of the annealed Au/Ni₅₀Fe₅₀ bilayer film lead to a significant decrease in the lattice constant of the Au layer.