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1.
The authors discuss the fabrication and characteristics of high-power (PCW=430 mW) InGaAs/InGaAsP/InGaP ridge waveguide lasers emitting at λ=0.98 μm, which is the optimum wavelength for pumping erbium-doped fiber amplifiers. In the past, high-power operation of Al-free pump lasers has been limited to 150 mW because of catastrophic optical damage of the mirror facet. This problem has been largely removed by increasing the spot size of the laser with the aid of an improved waveguide design. As a result, Al-free lasers can now achieve a maximum power comparable to the conventional GaAlAs-based pump lasers for λ=0.98 μm  相似文献   

2.
The development of a Fabry-Perot-type Ti,Er:LiNbO3 waveguide laser of optimized CW output power up to 63 mW (λs =1561 nm) at a pump power level of 210 mW (λp=1480 nm) and a slope efficiency of up to 37% is reported. The theoretical model for the waveguide laser is presented and applied to determine the optimum resonator configuration using waveguide parameters obtained from a detailed characterization of the laser sample. With pulsed pumping, waveguide laser pulses of up to 6.2 W peak power were observed. Apart from residual relaxation oscillations, the laser emission proved to be shot-noise limited  相似文献   

3.
The spectral properties of the guided-wave Nd fluorescence and results of laser oscillation in Ti-indiffused single-mode Nd:MgO:LiNbO 3 waveguides and waveguide cavities, respectively, are reported. The splitting and polarization behavior of the fluorescence lines around 0.9, 1.08, and 1.37 μm were studied. Using a single-mode diode laser as a pump source (λp=814.6 nm), an oscillation threshold in an 8-mm-long structure of 2.1-mW absorbed pump power has been obtained. An output power up to 310 μW (limited by the available pump power), a slope efficiency of 16% at power levels >150 μW, and an emission linewidth of 0.21 nm (at λs=1085 nm) have been measured  相似文献   

4.
Design optimization for efficient erbium-doped fiber amplifiers   总被引:3,自引:0,他引:3  
The gain and pumping efficiency of aluminosilicate erbium-doped fiber amplifiers (EDFAs) are analyzed as a function of guiding parameters and Er-doping profile for two pump wavelengths of λ p=980 nm and λp=1.47 μm. Three designs of fiber-amplifier waveguides are considered: one with the same mode size as standard 1.5-μm communication fibers (type 1); one with the same mode size as standard 1.5-μm dispersion-shifted fibers (type 2); and one with mode size smaller than those of communication fibers (type 3). For the 1.47-μm pump, fundamental LP01 mode excitation is assumed, while for the λp=980-nm pump, concurrent excitation of LP11 modes is considered. It is shown that excitation of higher-order pump modes at 980 nm does not significantly affect the amplifier gain performance. The effect of concentrating the Er3+ doping near the center of the fiber core is shown to increase the amplifier gain coefficients by a factor of 1.5 to 2  相似文献   

5.
Design, fabrication, and properties of an acoustooptically tunable Ti:Er:LiNbO3 waveguide laser of up to 31-nm tuning range in the wavelength band 1530 nm<λ<1575 nm are discussed. The laser cavity is formed by an Au mirror and a dielectric mirror as output coupler, both vacuum-deposited on the polished waveguide endfaces. As tunable intracavity wavelength filter with zero frequency shift, two monolithically integrated single-stage acoustooptical TE-TM-mode converters are used together with two polarization splitters operated as TE- and TM-pass polarizers, respectively. The minimum threshold of about 54 mW (coupled) pump power is obtained at λ≈1561-nm emission wavelength for diode laser pumping at λp≈1480 nm. With about 110-mW coupled pump power, up to 320-μW output power is achieved; the emission linewidth is 0.3 nm  相似文献   

6.
An accurate theoretical analysis is presented describing optical amplification in Er-diffused Ti:LiNbO3 channel waveguides. It follows as far as possible the theory already developed for Er-doped fibers. As optical pumping around λp≈1.48 μm is considered, a quasi-two-level model for the Er3+ ions is used with wavelength-dependent cross sections. The optical gain in the 1.53 μm<λ<1.64-μm wavelength range is evaluated. The characteristic parameters, as Er concentration profile, cross sections, pump, and signal mode distributions and waveguide (scattering) losses are taken from experiments. Examples of numerically calculated pump-, small-signal-gain-, and ASE-evolutions are presented. The model has been tested by comparing computed and experimentally observed gain characteristics for Xˆ- and Yˆ-cut LiNbO3; an almost quantitative agreement has been obtained  相似文献   

7.
An analysis of relaxation oscillations (λs~1.5 μm) in locally Er-doped optically pumped (λp~1.48 μm) waveguide lasers is reported. The theoretical model is based on time dependent rate equations for a quasi-two-level-system and on the equation of continuity for a gain medium. For the first time a numerically reliable simulation of the elementary properties of the laser oscillations was possible: the build-up time and decay of the relaxation oscillations, the time-dependent repetition period, the steady state signal output power and the evolution of the pump power versus time. Mathematically the problem can be characterized as a large boundary value problem, which can approximately be replaced by a stiff initial value problem of ordinary differential equations. In this report, pump- and signal evolution versus time are presented for planar Er-diffused Ti:LiNbO3 waveguide lasers. The numerically obtained results show a good quantitatively agreement with experimental investigations  相似文献   

8.
We present the theory of a scheme for frequency up-conversion from pump frequency ωp to a desired frequency ωd between 2ωp and 3ωp. The proposed device consists of three nonlinear crystals in series inside a cavity resonating light at a signal frequency ωs. Sum-frequency generation (SFG) in the first crystal produces the desired radiation, ωspd. Second-harmonic generation (SHG) in the second crystal doubles the frequency of the residual pump, 2ωph, while the signal passes through unaffected. Optical parametric oscillation (OPO) in the third crystal generates the signal and idler frequencies, ωhs+ω. A plane-wave analysis predicts a quantum efficiency close to 30% over an extended range of pump intensity. Iteration of the plane-wave solutions over many passes yields dynamics very similar to that recently calculated for the SFG-OPO device. As in that device, a small detuning of the SFG interaction enlarges the dynamic range yielding stable operation. Highest efficiency occurs when ωi is at the low-frequency end of the OPO crystal transmission window. As an example, we consider a device using a noncritically phase-matched KTP SFG crystal, a quartz crystal polarization rotator, an angle-tuned KTP SHG crystal, and a noncritically phase-matched LiNbO3 OPO crystal. This device is designed to convert λp=1.064 μm to λd=0.455 μm. We calculate a power conversion efficiency as great as 73%  相似文献   

9.
The controllable fabrication parameters, including anneal time, initial exchange time, channel width, dependences of TM00 mode size, corresponding effective refractive index, effective pump area, and coupling efficiency between pump and laser modes in z-cut annealed proton-exchanged (APE) Nd:LiNbO3 channel waveguide lasers were studied by using variational method. The effect of channel width on the surface index increment and the waveguide depth was taken into account. The features of mode size and effective refractive index were summarized, discussed, and compared with previously published experimental results. The effective pump area, which is directly proportional to threshold pump power, increases strongly, slightly, and very slightly with the increase of anneal time, channel width, and initial exchange time, respectively. However, the coupling efficiency, which is directly proportional to slope efficiency, remains constant (around 0.82) no matter what changes made to these parameters. The variation of the coupling loss between an APE channel waveguide and a fiber with these parameters for both laser (1085 nm) and pump (815 nm) wavelengths was also calculated. The calculated results indicate that the coupling loss decreases rapidly, slightly and very slightly with the increase of anneal time, channel width and initial exchange time, respectively  相似文献   

10.
The process of thermal annealing of K+-Na+ ion-exchanged channel waveguides has been studied with the aim of optimizing their coupling efficiency with commercial single-mode fibers at λ=1.321 μm. Waveguides obtained in soda-lime glass slides, with mask apertures ranging between 13.4 and 2.6 μm, were characterized before the annealing by combining nearfield measurements and an etching procedure. The experimental results were successfully compared with a theoretical model based on the variational principle. The refractive index distribution of K+-Na+ ion-exchanged channel waveguides supporting one or a low number of modes was given: compared to the corresponding slab case, the refractive index step Δno remained constant, while the waveguide depth was lower. The thermal annealing process of the channels was then performed and modeled by means of the standard diffusion theory. As a result, the channel fabrication parameters for optimum guide-fiber coupling could be predicted: 0.23-dB mode mismatch losses were measured between the optimized channel and a commercial 10/125 single-mode fiber, at λ=1.321 μm  相似文献   

11.
Typical quantum-well infrared photodetectors (QWIPs) exhibit a rather narrow spectral bandwidth of 1-2 μm. For certain applications, such as spectroscopy, sensing a broader range of infrared radiation is highly desirable. In this paper, we report the design of four broad-band QWIPs (BB-QWIPs) sensitive over the 8-14-μm spectral range. Two n-type BB-QWIPs, consisting of three and four quantum wells of different thickness and/or composition in a unit cell which is then repeated 20 times to create the BB-QWIP structure, are demonstrated. The three-well n-type InxGa1-xAs-AlyGa1-yAs BB-QWIP was designed to have a response peak at 10 μm, with a full-width at half-maximum (FWHM) bandwidth that varies with the applied bias. A maximum bandwidth of Δλ/λp=21% was obtained for this device at Vb=-2 V. The four-well n-type InxGa1-xAs-GaAs BB-QWIP not only exhibits a large responsivity of 2.31 A/W at 10.3 μm and Vb=+4.5 V, but also achieves a bandwidth of Δλ/λp=29% that is broader than the three-well device. In addition, two p-type In xGa1-xAs-GaAs BB-QWIPs with variable well thickness and composition, sensitive in the 7-14-μm spectral range, are also demonstrated. The variable composition p-type BB-QWIP has a large FWHM bandwidth of Δλ/λp=48% at T=40 K and Vb=-1.5 V. The variable thickness p-type BB-QWIP was found to have an even broader FWHM bandwidth of Δλ/λ p=63% at T=40 K and Vb=1.1 V, with a corresponding peak responsivity of 25 mA/W at 10.2 μm. The results show that a broader and flatter spectral bandwidth was obtained in both p-type BB-QWIP's than in the n-type BS-QWIP's under similar operating conditions  相似文献   

12.
We present results for GexSi1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge0.29Si0.71 absorption layers show an internal quantum efficiency of 33% at λ=1.3 μm with a dark current of 27 pA/μm2. The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid λ=1.3 μm silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed  相似文献   

13.
The authors present a simple technique for the fabrication of integrated optical channel waveguides that are prepared by indiffusion of an E-beam evaporated amorphous alloy of germanium and silicon into commercially available silicon with low dopant concentration, using only simple technological processes such as standard lithography, PVD, and diffusion. The waveguides are polarization independent and have waveguide losses as low as 0.3 dB/cm at wavelengths of λ=1.3 μm and λ=1.55 μm. The spot sizes are well suited for low-loss single-mode fiber device coupling, being on the order of a few microns in both horizontal and vertical directions  相似文献   

14.
The authors report the measured gain of a highly efficient erbium-doped fiber amplifier pumped at wavelengths between 1.46 and 1.51 μm. The optimal pump wavelength, λopt, was determined to be 1.475 μm. At this wavelength, the maximum gain coefficients for signals at 1.531 and 1.544 μm were 2.3 and 2.6 dB/mW, respectively. At λopt, high gains ranging from 32 dB at pump power Pp=20 mW up to 40 dB at P p=80 mW were obtained. These modest pump powers are within the capabilities of currently available 1.48-μm diode lasers. The width about λopt for 3-dB gain variation exceeded 27 nm for Pp=10 mW and 40 nm for Pp >20 mW. With this weak dependence on pump wavelength, single-longitudinal-mode lasers do not have a significant advantage over practical Fabry-Perot multimode pump lasers  相似文献   

15.
Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at λ=0.808 μm with a full width at half maximum ⩽2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm2 and differential efficiency of 0.7 W/A with series resistance of 0.12 Ω for 1.37 mm-long diodes have been measured  相似文献   

16.
Channel waveguides fabricated in LiNbO2 by proton diffusion with a self-aligned SiO2-cladding structure are discussed. Proton diffusion in width and depth directions is amenable to process parameters, so that it provides a simple method for control of mode profiles. Using this method, symmetric depth mode profiles and an aspect ratio of 1.15 at λ=0.6328 μm have been achieved for efficient fiber-to-waveguide coupling  相似文献   

17.
The fabrication and performance of a wavelength-insensitive 8×8 star coupler is described. The integrated-optic star coupler consists of two fan-shaped channel waveguide arrays facing each other and a slab waveguide region located in between. The wavelength-insensitive light splitting was realized by properly tailoring the mode coupling in the input array region. The coupler exhibits low-average excess losses of α=1.4 dB (standard deviation σ=0.40 dB) at λ=1.3 μm and α=1.7 dB (σ=0.44 dB) at λ= 1.55 μm, respectively  相似文献   

18.
Reports a theory for calculating the coupling length L c of Ti:LiNbO3 single-mode waveguide directional couplers from process parameters and operating wavelength. Estimates are accurate to within a factor of 2 compared with published experimental results for z-cut y-propagating LiNbO3 devices for 0.63 μm⩽λ⩽1.56 μm. Use of this formalism to assess acceptable process parameter and wavelength tolerances is demonstrated  相似文献   

19.
The inhomogeneous behavior of the 1.06 μm-neodymium transitions in doped optical fibers have been investigated, using the fluorescence line narrowing technique, pumping on the 4F3/2 and 4F5/2 sublevels at 4 K. Each observed transition has been identified. As the pump wavelength varies, the shift of the main fluorescence line is 40 nm, with the two pumping levels. We have studied the spectral behavior of the superfluorescence as a function of the pump wavelength, the temperature, and the absorbed power. The spectral evolution depends on λp with 19 nm-tuning range at low temperature. At 300 K, the quasihomogeneous behavior of the transition decreases the tunability to 14 nm. Based on these results, we present a simple technique permitting precise prediction of gain and spectral line shapes of superfluorescent Nd-doped fiber sources  相似文献   

20.
A theoretical model for the amplifiers predicts gain coefficients of around 2 dB per milliwatt of launched pump power, in close agreement with previously reported measurements. The model is also used to determine the optimal pump wavelength λopt that maximizes the amplifier gain. It is shown that the latter is insensitive to pump detuning near λopt=1.48 μm, within a 20 nm range, which indicates that broadband, multimode laser diode pump sources and pumps with narrow linewidths should yield identical gain performance  相似文献   

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