基于光点修复的脉冲偏转方式应用研究

脉冲偏转是一种不同于扫描偏转和直流偏转的偏转方式.它不但在光点测量时使彩色CRT偏转线圈处于脉冲静态偏转状态,而且能在PC控制下使荫罩下的光点微移动,从而将残缺光点修复成完整的原始光点.光点修复是一个高速数据采集与图像处理的过程,其重要的方式就是应用"拼接法"将采集的多帧残缺光点图像实时地修复成原始光点图像,以便进行光点尺寸计算和光点质量分析.     

显像管磁偏转散焦的分析

通过对显像管中偏转后电子束光点尺寸的测量及数据处理,可得到屏上光点尺寸与偏转线圈绕组分布之间的对应关系,根据该关系提出了减小光点尺寸的偏转绕组分布的设计方法。     

采用动态电子束成形技术的一字型彩色数字显示管

引言在一字型彩色显象管中,当电子束偏转到显象管荧光屏边缘的时候,电子束光点明显地畸变。这种畸变称之为偏转畸变,它使荧光屏边缘区域的清晰度降低,并且偶尔还能引起莫尔波纹现象。有两种光点畸变,一种是边缘畸变,是由于成象球面和荧光屏之间的不一致而引起的。另一种光点畸变是由偏转线圈(Dy)的不均匀磁场所引起。对于一字型彩色显象管而言,后一种光点畸变是主要的。     

光点测试仪阴极脉冲电路设计

本文介绍了一种适合科学研究的精密光点测试系统,它采用脉冲方法刷新光点,并且刷新频率与电源频率保持同步;着重介绍阴极脉冲放大器为阴极提供一个脉冲、保证和帧同步在屏上产生一个光斑。阴极脉冲电路由脉冲发生器,延时电路,驱动输出电路及保护电路组成。     

国外显示技术专利文摘——用于阴极射线管的改进的偏转磁轭

一种用于阴极射线管的偏转磁轭提高装配和生产率，并且能够在装置处理期间有效地控制磁场校正。该偏转磁轭包括：水平偏转线圈，位于靠近所述玻锥的外周的位置，用于产生水平偏转磁场；垂直偏转线圈，安装在所述玻锥的外周，用于产生垂直偏转磁场。所述垂直偏转线圈与所述水平偏转线圈绝缘。铁氧体磁芯，位于邻近所述垂直偏转线圈的位置，用于减少所述垂直偏转线圈和水平偏转线圈产生的磁力的损失；     

具有动态象散控制的叉指式栅极电子枪

在ＣＯＴＹ－２９显像管电子槌的聚焦极上并入叉指式栅极，要以实现其象散控制。这种栅极产生一种四极场，它使得自会聚管偏转线圈所引起的垂直电子束的聚焦性能得以校正，因此，就消除了至今未能解决的偏转光点的垂直闪烁问题。     

光点测试系统中的数字信号处理方法

本文介绍了在光点测试系统中的数字信号处理方法。文章着重讨论了光咪测试系统工作时要注意的几种噪声,分析了噪声的性质,引进了消除噪声的一些处理方法,并简单地介绍了几种FIR滤波器。实际测量结果表明,经过处理后的光点图像信息消除了大部分噪声的影响,更适合电子枪和偏转线圈设计人员的进行精密的光点测试分析。     

集成化OTL场输出级与逆程泵电源电路的设计特点(之二)——彩色多频同步显示器电路设计分析Ⅺ

由TDA1170N与外部场偏转线圈和s校正电容组成的集成化场偏转输出电路,是一种无输出变压器型(OTL)功率放大器,它由IC内部的乙类单端推挽式电路(SEPP)和消隐脉冲形成与逆程泵电源等组成。     

彩色显像管中的像散和散焦的动态补偿

在一字形电子枪组成的彩色显像管中,屏的边缘会出现明显的光点散焦而降低分辨率。这是由于像面和屏面的曲率半径不一致以及由偏转线圈所产生磁场的不均匀性而引起的,后者在自会聚彩色显像管中的影响更明显。解决上述问题的方法,是用产生受偏转信号频率调制并与之同步的抛物波电压,来控制由电子枪产生的四极场从而抵消偏转像散,同时对主透镜进行辅助动态聚焦。本文介绍出现偏转像散的原因,四极透镜     

CRT的磁部件——进展报导

本文论述近代 CRT 在磁部件方面的最新发展。偏转线圈我们首先考虑偏转线圈,显示设计者所关心的是偏转线圈的许多参数。影响显示质量的三种因素是:(1)光点增大;(2)电子束的迅速稳定;(3)几何结构的准确度。     

对称强磁场产生装置设计及磁场仿真

在对称线圈上施加强脉冲电流,在脉冲电流的激励下,线圈中产生感应脉冲磁场,从而实现同极性磁场撞击.在撞击过程中,磁能会以一种波的形式激发出去,从而产生激磁波.激磁波是一种磁性波,其能量主要通过磁场的变化进行传递.利用有限元的方法对对称线圈的内部外部分别进行仿真,讨论并分析了磁场在空间和时间上的变化.     

Design and performance of deflected-beam electron-bombarded semiconductor amplifiers

This paper describes the design and testing of developmental electron-bombarded semiconductor (EBS) devices as pulsed dc and pulsed RF amplifiers. These devices employ a well-focused electron beam deflected in proportion to the input signal to control the current in a semiconductor target. Both Class A and Class B amplifier configurations are described, with a prediction of their relative efficiency and distortion properties. The deflection sensitivity of simple deflection plates and traveling-wave deflection systems is considered. Experimental results are given for amplifiers with planar passivated semiconductor targets and traveling-wave deflection systems operated as video-pulsed amplifiers and Class B RF amplifiers. Performance of nanosecond-risetime videopulse amplifiers with peak output power greater than 700 W and efficiency in excess of 80 percent is described. Test data are presented from RF amplifiers with efficiency performance of 60 percent. A comparison of theoretical and experimental results is given based upon a computer simulation of semiconductor target performance. Preliminary life test data showing stabilized diode performance with negligible reverse breakdown voltage deterioration are presented.     

Air core coils for deflecting micron-size electron beams

Bobbin-type air core coils have been designed and experimentally evaluated for astigmatic properties in line scan operation over deflection angles of ± 20°. The approximate design technique is successful in specifying the proper operating focal distance when this is comparable to the coil length. Line fields in excess of 20 000 spot diameters have been measured using a 10 kV beam having a 5 × 10-³radian convergence half-angle.     

Relaxation of operational amplifier parameters after pulsed electron beam irradiation

The relaxation of operational amplifier parameters (offset voltage and differential gain) with time after pulsed electron beam irradiation has been studied as a function of total dose and amplifier type. Four types of operational amplifiers were studied viz., general purpose bipolar input (μA 741), super-beta transistor input (LM 308), JFET input (LF 356) and MOSFET input (CA 3140) from different vendors. The experiments were carried out mainly using 500 ns pulses from a Linear Accelerator. The study, the first of its kind, shows that while the electrical transient at the output of the operational amplifier recovers in a few milliseconds, relaxation of parameters can take several to several tens of seconds. This relaxation is attributed to the build up and/or anneal of damage in the oxide or at the interface of the internal transistor structures. The change and relaxation of parameters depend on operational amplifier type and total dose, and can have significant effects in certain application domains as illustrated by the response of a thermocouple amplifier after pulsed irradiation.     

电视机偏转线圈噪声分析仪的研制

主要介绍电视机偏转线圈的一个噪声分析方案以及据此研制出来的噪声分析仪,用以分析偏转线圈所发出噪声的频谱分布,从而为偏转线圈的质量判定提供依据     

Pulsed laser sampling photon amplifier

The performance of semiconductor laser amplifiers can be significantly improved by injecting carriers with pulsed electric currents of subnanosecond duration. Pulsed operation is illustrated in a Fabry-Perot amplifier and in a traveling-wave amplifier. The resonant amplifier is most sensitive to an input light wave at the instant the carrier density is crossing over the critical region, giving a sharply pulsed sampling effect on the input light wave signal. Compared to a resonant amplifier operating at subcritical electron density, the pulsed amplifier gives much higher gain and peak power. In fact, pulsed operation of a resonant amplifier is also expected to give significantly higher gain than and about the same peak output power as a traveling-wave amplifier. Pulsed operation also improves the performance of a traveling-wave amplifier by attenuating its internally reflected waves.<>     

压电陶瓷驱动电源的设计与实现

本文采用高压大带宽MOSFET运放PA92和高精度运放OP07设计了一种基于电压控制型的可动态压电陶瓷驱动电源。该驱动电源由放大电路、功率放大电路、过流保护电路和负反馈环节组成。克服了目前常用的压电陶瓷驱动电源所存在的成本高、驱动能力不足、静态纹波大等缺点。最后对实际电路的各项性能进行了测试和分析,结果表明:该电路具有良好的动态和静态性能,能够很好的满足驱动压电微位移平台的要求。     

磁偏转线圈的优化设计

本文由谢志行等(1987)给出的场参数表达式,借助正交设计法,对带屏蔽筒鞍形偏转线圈进行了优化设计,所得结果与实际模型相符。指出了鞍形偏转线圈的端耳效应和场参数B0(z)分布对象差的重要贡献。例示了有限长余弦分布绕组与分布式绕组之间电子光学性能的比较。     

A theoretical study of pulsed laser sampling photon amplifiers

Theoretical studies point to significant improvements in the performance of semiconductor laser amplifiers by injecting carriers with pulsed electric currents of sub-nanosecond duration. A pulsed Fabry-Perot amplifier (FPA) is most sensitive to input lightwave at the instant the carrier density is crossing the critical region, and gives a sharply pulsed sampling effect on the input lightwave signal. Compared with a FPA operating at subcritical electron density, the pulsed amplifier gives much higher gain, peak power, and bandwidth. In fact, pulsed operation of a FPA is also expected to give significantly higher gain and about the same peak output power as a traveling wave amplifier. Pulsed operation also improves the performance of a traveling wave amplifier by attenuating its internally reflected waves