Direct Low‐Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High‐Power Electronics

A novel approach for the direct synthetic diamond–GaN integration via deposition of the high‐quality nanocrystalline diamond films directly on GaN substrates at temperatures as low as 450–500 °C is reported. The low deposition temperature allows one to avoid degradation of the GaN quality, which is essential for electronic applications The specially tuned growth conditions resulted in the large crystalline diamond grain size of 100–200 nm without coarsening. Using the transient “hot disk” measurements it is demonstrated that the effective thermal conductivity of the resulting diamond/GaN composite wafers is higher than that of the original GaN substrates at elevated temperatures. The thermal crossover point is reached at ≈95–125 °C depending on the thickness of the deposited films. The developed deposition technique and obtained thermal characterization data can lead to a new method of thermal management of the high power GaN electronic and optoelectronic devices.     

High electrical resistivity of CVD-diamond

Due to its combination of excellent thermo-mechanical properties and electrical properties such as the high electrical resistivity and high dielectric strength, diamond seems a promising material for specialized dielectric applications. Due to the great advances in the growth technology of diamond films by chemical vapour deposition (CVD) on e.g. Si-substrates, new applications can be expected in microelectronics. An important technological result for dielectric applications is that high electrical resistivity diamond films can be obtained after an appropriate heat treatment of the as-grown films.     

金刚石薄膜涂层刀具切削性能研究

金刚石涂层具有与天然金刚石相同的优异特性：高硬度，低摩擦系数，高耐磨和高导热性能。金刚石涂层刀具用于车削，进而用于铣削和间断切削，特别适用于现代高速干切削加工，从而提高生产率。本文介绍金刚石涂层刀具研究现状以及笔者进行切削试验的结果。     

Diamond semiconductor and elastic strain engineering

Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.     

MPCVD金刚石膜沉积技术及金刚石膜材料在微波电真空器件中的应用

金刚石膜是一种集众多优异性能于一身的新材料,尤其是其热导率高、绝缘性能好以及微波介电损耗低等特点,使金刚石膜在微波电真空器件领域有着重要的应用前景。目前,以微波等离子体化学气相沉积（MPCVD）方法制备高品质金刚石膜的技术已趋向成熟。本文将针对微波电真空器件这一应用背景,简要介绍国内外高品质金刚石膜MPCVD沉积技术的发展现状,进而对金刚石膜材料应用于微波电真空器件领域的一些典型实例进行简单的介绍。     

Influence of Bias-Enhanced Nucleation on Thermal Conductance Through Chemical Vapor Deposited Diamond Films

This work describes an experimental study of the cross-plane thermal conductance of plasma-enhanced chemical vapor deposited (PECVD) diamond films grown as a result of bias-enhanced nucleation (BEN). The diamond films are grown on silicon wafers using a two-step process in which a nucleation layer of amorphous or diamond like (DLC) carbon is first deposited on the silicon under the influence of a voltage bias. Then, conditions are adjusted to allow for polycrystalline diamond (PD) growth. The nucleation layer is essential for seeding diamond growth on smooth substrates and for optimizing PD properties such as grain size, orientation, transparency, adhesion, and roughness. A photoacoustic (PA) technique is employed to measure the thermal conductivities of and the thermal interface resistances between the layers in the diamond film structure. The influence of nucleation layers that are 70, 240, 400, and 650 nm thick on the thermal conductance of the diamond film structure is characterized. The thermal conductivity of the nucleation layer exhibits a thickness dependence for relatively thin layers. For each sample, the thermal conductivity of the PD is higher than 500 Wldrm^-1K^-1 (measurement sensitivity limit). A resistive network for the diamond film structure is developed. The resistance at the silicon/nucleation interface is less than 10^-9m²ldrKldrW^-1 (measurement sensitivity limit), which is of the order of theoretical predictions. The minimum diamond film structure resistance occurs when the nucleation layer is thinnest. When the nucleation layer is sufficiently thick, it begins to exhibit bulk behavior, and the resistance at the nucleation/PD interface dominates the thermal resistance of the diamond film structure.     

CVD Diamond Sink Application in High Power 3D MCMs

As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD diamond, because of its high thermal conductivity, low dielectric loss and its great mechanical strength, is an excellent material for three dimensional （319） multichip modules （MCMs） in the next generation compact high speed computers and high power microwave components. In this paper, we have synthesized a large area freestanding diamond films and substrates, and polished diamond substrates, which make MCMs diamond film sink becomes a reality.     

黑色组织对直流电弧等离子体喷射金刚石自支撑膜光学、热学性能的影响

利用直流电弧等离子体喷射化学气相沉积法进行不同质量的金刚石厚膜的制备。金刚石膜用倒置荧光显微镜(OM)、高分辨电镜(HRTEM)、电子能量损失谱(EELS)、拉曼谱(Raman)进行表征,同时测量了不同质量金刚石膜的红外透过率和热导率。研究结果表明,黑色组织主要是金刚石膜中的夹杂物,成分主要是非晶碳和杂质氮。对于光学级透明金刚石膜,具有很高的红外透过率和热导率,黑色组织的存在明显降低了金刚石膜的质量,对金刚石膜的红外透过率和热导率的影响非常显著。     

Rheology and Thermal Conductivity of Diamond Powder-Filled Liquid Epoxy Encapsulants for Electronic Packaging

The traditional silica-based epoxy system used for electronic packaging has a poor thermal conductivity of less than 1 W/mK and no longer meets the increasingly stringent thermal management requirements of many packaging applications. The current commercial availability of low-cost diamond powders with very high-thermal conductivity makes it possible to consider diamond powder-filled epoxy for high-end product packaging. This paper reports the design, rheology, and experimentally determined thermal conductivity results on the multimodal diamond powder-filled epoxy system for liquid encapsulants. Rheology studies of the monomodal diamond powder in epoxy show the necessity of the use of surfactants when the powder sizes are below 10 $mu {rm m}$. A high-thermal conductivity of 4.1 W/mK was achieved for epoxy-filled by 68% volume loading of diamond powders, which required a multimodal particle size distribution (nine sizes). Comparative measurements of electronic junction temperatures of Si diodes sealed by the diamond powder-filled epoxy and commercial silica-epoxy show a much better thermal performance of the diamond-filled epoxy, which suggests the potential application of the diamond-filled epoxy for packaging high-end electronic products.      

金刚石膜MEMS及其应用

由于金刚石膜优异的力学、电学、热学及化学性质,使其成为MEMS中的微型传感器和微型结构的重要的首选材料。利用金刚石膜作为MEMS材料和各种微型机械的技术正在引起极大的兴趣。本文主要综述了金刚石MEMS器件的技术和应用。     

Synthetic Diamond for Intracavity Thermal Management in Compact Solid-State Lasers

The intracavity use of newly developed low-birefringence synthetic diamond for thermal management in compact solid-state lasers is examined both experimentally and theoretically. A comparison - using single-crystal natural diamond as a base line - is made between synthetic, single-crystal diamond types: chemical vapor deposition and high pressure/high temperature grown diamond. The synthetic diamond samples are shown to possess significantly lower birefringence than often occurs in natural single-crystal diamond while maintaining the excellent thermal management properties and low insertion loss of natural diamond. Low threshold, high efficiency laser operation is demonstrated in polarization sensitive cavities incorporating intracavity synthetic diamond using both doped-dielectric and semiconductor gain elements. In addition, finite element analysis is used to demonstrate the potential of diamond to reduce thermal distortion and stress in doped-dielectric disk lasers. A 15 W Nd:GdVO₄ disk laser utilizing diamond is demonstrated. These results highlight the potential of low birefringence synthetic diamond for intracavity thermal management applications in solid-state lasers.     

Thermal properties of diamond/copper composite material

Thermal considerations are becoming increasingly important for the reliabilities of the electronics parts as the electronics technologies make continuous progress such as the higher output power of laser diodes or the higher level of integration of ICs. For this reason the desire for improving thermal properties of materials for electronics component parts is getting stronger and the material performance has become a critical design consideration for packages. To meet the demands for a high performance material for heat spreader materials and packages, a new composite material composed of diamond and copper was successfully manufactured under high pressure and high temperature. The effects of diamond particle sizes and the volume fractions of diamond on both thermal conductivity and the coefficient of thermal expansion (CTE) were investigated. The thermal conductivity of the composite material was dependent on both the particle size and the volume fraction of diamond, while the CTE was dependent only on the volume fraction of diamond. At the higher diamond volume fraction, the experimentally obtained thermal conductivities of the composite materials were above the theoretically expected values and the experimentally obtained CTE were between the two theoretical Kerner lines. This may be due to the fact that at the higher diamond volume fraction the diamond particles are closely packed to form bondings between each particle. The composite of diamond and copper have a potential for a heat spreading substrate with high performance and high reliability because not only its thermal conductivity is high but its coefficient of thermal expansion can be tailored according to a semiconductor material of electronics devices.     

Thermally Conductive Reduced Graphene Oxide Thin Films for Extreme Temperature Sensors

Reduced graphene oxide (RGO) films are promising in applications ranging from electronics to flexible sensors. Though high electrical and thermal conductivities have been reported for RGO films, existing thermal conductivity data for RGO films show large variations from 30 to 2600 W m^?1 K^?1. Further, there is a lack of data at low temperatures (<300 K), which is critical for the understanding of thermal transport mechanisms. In this work, a temperature‐dependent study of thermal (10–300 K) and electrical (10–3000 K) transport in annealed RGO films indicates the potential application of RGO films for sensing temperatures across an extremely wide range. The room‐temperature thermal conductivity increases significantly from 46.1 to 118.7 W m^?1 K^?1 with increasing annealing temperature from 1000 to 3000 K with a corresponding increase in the electrical conductivity from 5.2 to 1481.0 S cm^?1. In addition, films reduced at 3000 K are promising for sensing extreme temperatures as demonstrated through the measured electrical resistivity from 10 to 3000 K. Sensors based on RGO films are advantageous over conventional temperature sensors due to the wide temperature range and flexibility. Thus, this material is useful in many applications including flexible electronics and thermal management systems.     

宽带隙半导体AIN薄膜的制备及应用

AIN是一种宽带隙半导体,它具有高温稳定性、高热导率、高弹性模量、非毒性,并且具有能从半导体到绝缘体的性质变化等优异的物理性质。本文主要介绍了AIN薄膜的制备方法和应用,也给出了今后有待进一步解决的问题。     

Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD

Electrical conductivity measurements and photoluminescence (PL) were used to study the effects that sample distance from the plasma during growth has on the carrier transport properties of undoped CVD diamond. The films were grown by downstream microwave plasma chemical vapor deposition at distances from 0.5 to 2.0 cm from the edge of plasma glow. Electrical conductivity measurements were performed between room temperature and 1000° C and then complimented with Raman spectroscopy and PL studies in an attempt to gain a better understanding of the CVD growth process and the resulting electrical and optical properties of the diamond films. Room temperature electrical conductivity was found to vary by over 5 orders of magnitude with increasing growth distance from the plasma, while only moderate changes were observed in the luminescence spectra.     

基于金刚石拉曼转换的光束亮度增强研究进展

具有不同波长的高亮度激光在国防、工业、生命科学等诸多领域发挥着重要作用。但是受限于现有工作物质固有的光谱特性和热物性，传统粒子数反转激光器的波长和输出功率难以兼顾，甚至导致激光在功率提升时光束亮度不升反降。为了克服该难题，近几年人们利用非线性光学技术对光束净化开展了大量研究，即将粒子数反转激光器输出的低光束质量的光束，通过受激拉曼或受激布里渊散射等效应转变为高光束质量激光输出。其中，金刚石晶体以其高拉曼增益系数、极高的热导率和极宽的光谱透过范围等性质，在实现高效率拉曼波长转换的同时展现出优异的光束亮度增强特性，为人们获得高功率、高亮度激光光束提供了新的技术路径。文中对基于金刚石的一阶和级联拉曼转换的光束亮度增强研究进行了综述，并围绕其潜在的应用进行了探讨。     

化学气相沉积光学级金刚石薄膜的研究进展

化学气相沉积（CVD））金刚石薄膜优异的光学性能在近几年得到了广泛的重视,关于它的研究也在近几年取得了较大的突破。综述了CVD金刚石薄膜的光学性能,着重从成核、生长和后期处理三个方面对光学级CVD金刚石薄膜的制备进行了讨论,并对今后的研究作了展望。     

Strongly Anisotropic Thermal Conductivity of Free‐Standing Reduced Graphene Oxide Films Annealed at High Temperature

Thermal conductivity of free‐standing reduced graphene oxide films subjected to a high‐temperature treatment of up to 1000 °C is investigated. It is found that the high‐temperature annealing dramatically increases the in‐plane thermal conductivity, K, of the films from ≈3 to ≈61 W m^?1 K^?1 at room temperature. The cross‐plane thermal conductivity, K_⊥, reveals an interesting opposite trend of decreasing to a very small value of ≈0.09 W m^?1 K^?1 in the reduced graphene oxide films annealed at 1000 °C. The obtained films demonstrate an exceptionally strong anisotropy of the thermal conductivity, K/K_⊥ ≈ 675, which is substantially larger even than in the high‐quality graphite. The electrical resistivity of the annealed films reduces to 1–19 Ω □^?1. The observed modifications of the in‐plane and cross‐plane thermal conductivity components resulting in an unusual K/K_⊥ anisotropy are explained theoretically. The theoretical analysis suggests that K can reach as high as ≈500 W m^?1 K^?1 with the increase in the sp² domain size and further reduction of the oxygen content. The strongly anisotropic heat conduction properties of these films can be useful for applications in thermal management.     

Fabrication and thermal evaluation of silicon on diamond wafers

Silicon on diamond (SOD) is proposed as a superior alternative to conventional silicon on insulator (SOI) technology for silicon-based electronics. In this paper, we present a novel SOD structure in which the active Si layer is in direct contact with a thick, highly oriented diamond (HOD) layer that is directly attached to a heat sink. In contrast to the earlier work,^1,2 the diamond film is relatively thick (∼70 μm), free standing, and close to single crystalline, thus possessing much greater thermal conductivity and no limitation of the Si backing wafer. Two different fabrication schemes are investigated: (1) direct growth, where the Si-device layer makes contact with the nucleation side of the diamond layer; and (2) wafer fusion, where the Si device layer makes a direct contact with the diamond growth surface. Thermal evaluation was performed using metallic microheaters. These studies clearly showed more than one order of magnitude better thermal management properties of diamond with respect to Si and SOI.     

Investigation of the electrical transport mechanism in VOx thin films

Vanadium oxide VO₂ is a material that transforms from semiconductor to a metal state at a temperature of 67 °C. This phase transformation is accompanied by a dramatic change in its electrical and optical properties. Therefore, vanadium oxide thin films are most attractive for switching applications. Non-stoichiometric thin films of VO_x, including VO₂, also present such thermal response.This paper presents the optical and electrical properties of vanadium oxide thin films deposited by vacuum thermal evaporation of a metal vanadium with follows oxidation. We have studied the electro-physical behavior of these films during their phase transition. It was shown that the electrical transport mechanism of the obtained vanadium oxide films differ in low and high electrical fields. In low electrical fields, conductivity is obtained by the Schottky transport mechanism, whereas in high electrical fields, conductivity ranges from Ohmic, for medium fields, to Poole-Frenkel for higher fields. Also, FTIR and near IR reflectance characteristics of the obtained films are presented.