Sintering, densification and crystallization of Ca–Al–B–Si–O glass/Al2O3 composites for LTCC application

Ca–Al–B–Si–O glass/Al₂O₃ composites were prepared based on the borosilicate glass powders (D₅₀ = 2.84) and Al₂O₃ ceramic powders (D₅₀ = 3.26), and the sintering, densification, crystallization of samples were investigated. The shrinkage of sample starts to have a sharp increase at 600 °C. The shrinkage of sample starts to have a further rapid increase after the glass softening temperature of about 713 °C. Glass/Al₂O₃ composites can be sintered at 875 °C/15 min and exhibit better properties of a relative density of 98.4 %, a λ value of 2.89 W/mK, a ε _r value of 7.82 and a tan δ value of 5.3 × 10^?4. The interface between glass and Al₂O₃ grains and the interface between anorthite and glass phase depicts a good compatibility according to transmission electron microcopy test. It is the low sintering temperature, high density and good compatibility with Ag electrodes that, guarantee borosilicate glass/Al₂O₃ composites suitable for low temperature co-fired ceramic materials.     

Temperature-dependent dielectric and microwave absorption properties of silicon carbide fiber-reinforced oxide matrices composite

Simultaneous improvement of mechanical and microwave absorption properties of the composites at high temperatures still undergoes considerable challenges. We have investigated the high-temperature microwave absorbing properties of the silicon carbide fiber-reinforced oxide matrices (SiC_f/mullite–SiO₂) composite on the basis of our previous work. Results indicate that the complex permittivity increases from 8.19 ? j5.09 to 16.39 ? j9.83 at 10 GHz with the temperature rising from 200 to 600 °C. The SiC_f/mullite–SiO₂ composite has relatively high tanδ values indicating superior microwave attenuation ability. The reflection loss (RL) values of the composite increase with rising thickness. It can be noticed that the RL response curves of different thicknesses are basically consistent at 200 and 400 °C. In addition, the RL value of the composite is less than ??5 dB in the whole X band when the thickness is under 2.9 mm and the temperature is below 400 °C. The hybrid oxide matrices of mullite and SiO₂ are beneficial to improve the dielectric properties, especially high-temperature microwave absorption properties of the SiC fiber-reinforced ceramic matrix composite. The superior microwave absorption properties indicate that the SiC_f/mullite–SiO₂ composite is a promising candidate in aircraft engine nozzle and aerodynamic heating parts of aircrafts at high temperatures.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O₂/(O₂ + Ar) % of 66.67 % in a mixed gas of Ar and O₂ with constant chamber pressure of 2.75 × 10^?4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be ?0.32 × 10¹⁰ dyne/cm² from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.     

The dielectric properties and dielectric mechanism of perovskite ceramic CLST/PTFE composites

Polytetrafluorethylene (PTFE) composites filled with perovskite (Ca,Li,Sm)TiO₃ (CLST) dielectric ceramic of various volume fractions filler up to 60% were prepared. The effects of volume fraction of ceramic filler on the microstructure and dielectric properties of the composites have been investigated. A comparative study of dielectric properties of experiment and modeling analysis has been carried out at high frequencies for the CLST/PTFE composites. The results indicate that both the dielectric constant and the dielectric loss increase with the filler. The CLST/PTFE composite with 40% ceramic has exhibited good dielectric properties: ε _r?=?7.92 (~10 GHz), tan δ?=?1.2?×?10^?3 (~10 GHz), and τ _f?=??45 ppm/°C. The dielectric properties are obviously better than most composites reported previously at high frequencies in the aspects of dielectric loss and thermal stability. The dielectric constant and dielectric loss of composites predicted by the Rother–Lichtenecker equation and the general mixing model are in good agreement with the experiment data when the volume fraction of ceramic is less than 40%. When the volume fraction of the ceramic is more than 40%, the deviation occurs. By introducing the correction factor, the theoretical values of the dielectric constant agrees well with the experimental values.     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.     

Synthesis and characterization of borosilicate glass/β-spodumene/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites with low CTE value for LTCC applications

Glass?+?ceramic composites based on low-softening-point borosilicate (BS) glass, β-spodumene and Al₂O₃ were produced in this work. The influence of ceramic filler composition on the microstructure, sintering quality, mechanical properties, thermal properties and dielectric properties of composites were studied. XRD and DSC indicated that both kinds of ceramic filler as well as the BS glass maintained their characteristics after sintering. The addition of β-spodumene would decrease the coefficient of thermal expansion (CTE) value of composites to match with silicon well. The better wetting behavior between β-spodumene and BS glass would lead to better sintering quality, microstructure and dielectric properties for composites containing more β-spodumene. With appropriate Al₂O₃ content, the flexural strength of composites could be enhanced. Composite with 45 wt% BS glass, 30 wt% β-spodumene and 25 wt% Al₂O₃ sintered at 875 °C showed good properties which meet the requirements of low temperature co-fired ceramic applications: dense microstructure with high relative density of 96.27%, proper CTE value of 3.57 ppm/°C, high flexural strength of 156 MPa, low dielectric constant of 6.20 and low dielectric loss of 1.9?×?10^?3.     

The effect of microstructure on thermal expansion coefficients in powder-processed Al2Mo3O12

Orthorhombic Al₂Mo₃O₁₂ was investigated as a model anisotropic phase to understand the influence of powder preparation routes and bulk microstructure (mean grain size) on the bulk coefficient of thermal expansion (CTE) and to compare it to the intrinsic CTE of powder samples. A co-precipitation route was used for the synthesis of pure single-phase nanopowders, while a polyvinyl alcohol-assisted sol–gel method was utilized for the synthesis of micron-sized powders. Sintered samples prepared from both powders exhibited different microstructures in terms of mean crystal sizes and porosity. Bulk samples obtained from nanopowders were highly porous and contained crystals of approximately 100-nm diameter, while the bulk pieces produced from the micron-sized powders were denser, contained crystals larger than 5 μm, and showed occasional intergranular and transgranular microcracks. Such different microstructures hugely impact the bulk CTE: the nanometric sample possesses a bulk CTE (0.9 × 10^?6 °C^?1, from 200 to 700 °C) closer to the instrinsic CTE (2.4 × 10^?6 °C^?1) than for the micrometric sample, which showed a negative CTE (?2.2 × 10^?6 °C^?1) from 200 to 620 °C, and an even more negative CTE above 620 °C (?35 × 10^?6 °C^?1). A finite element analysis showed that the local maximum thermal tensile stresses could be as high as 220 MPa when simulating a temperature drop of 700 °C as an example of thermal treatment following sintering. This tensile stress is expected to exceed the tensile strength of Al₂Mo₃O₁₂, explaining the origin of microcracks in bulk samples prepared from the micron-sized powders. The thermal behavior of the microcracks leads to differences between the intrinsic and bulk thermal expansion; we show experimentally that such differences can be reduced by nanostructuring.     

Microwave dielectric properties of Li2ZnTi3O8 ceramics prepared by reaction-sintering process

Li₂ZnTi₃O₈ (LZT) microwave dielectric ceramics prepared by reaction-sintering process were investigated. Li₂CO₃, ZnO and TiO₂ powders were mixed, pressed and sintered directly into ceramic pellets without any calcination stage involved. Pure LZT phase was obtained after sintering at temperatures above 1,100 °C for 2 h. LZT ceramic with the maximum bulk density of 3.81 g/cm³ (96.2 % of the theoretical value) and excellent microwave dielectric properties of ? _r  = 25.8, Q × f = 78,216 GHz and τ _f  = ?10.5 ppm/°C was obtained after sintering at 1,100 °C for 2 h. The results show that the reaction-sintering process is a simple and effective method to produce LZT ceramics.     

The Magnetic and Structural Properties of SiC-Doped MgB2 Bulks Prepared by the Standard Ceramic Processing

According to general formula MgB_2?x SiC _x (x=0,0.05,0.1,0.2), MgB₂ and SiC-doped bulk superconductors were prepared by the standard ceramic processing. The mixtures of the corresponding powders were sintered at 750?°C for 0.5 h under pressure of 8 bar Argon. X-ray diffraction patterns show that all the samples have MgB₂ as the main phase with a very small amount of MgO; further, with SiC-doped, the presence of Mg₂Si is also noted. The magnetization-temperature measurements showed a transition temperature of 37.5 K for the undoped sample which indicates the typical transition temperature of MgB₂. When the content of SiC increased in the sample, the transition temperatures decreased to the lower temperatures systematically. The M?CH loops measured using a VSM showed very large magnetization value at low temperature for SiC doped samples. The largest M?CH loops were taken from the sample contains 5% SiC. The critical current density of samples calculated from M?CH loops indicated a value of around 4×10⁵ A/cm², which is in good agreement with the literature.     

A new microwave dielectric ceramics for LTCC applications: Li2Mg2(WO4)3 ceramics

A novel microwave dielectric ceramics Li₂Mg₂(WO₄)₃ (LMW) for low-temperature co-fired ceramics (LTCC) application were prepared by the conventional solid-state sintering method. Densification, phases, microstructure and microwave dielectric properties of the Li₂Mg₂(WO₄)₃ ceramics were investigated. The optimal sintering temperature of dense Li₂Mg₂(WO₄)₃ ceramic approximately ranges from 825 to 875 °C for 3 h. The ceramic specimens fired at 875 °C for 3 h exhibits excellent microwave dielectric properties: ε _r  = 7.72, Q × f = 29,600 GHz (f = 6.0 GHz), and τ _f  = ?15.5 ppm/°C. Moreover, the Li₂Mg₂(WO₄)₃ ceramics has a chemical compatibility with Ag during cofiring, which makes it a promising ceramic for LTCC technology application.     

Microwave dielectric properties of (1 − x)(Mg0.4Zn0.6)2SiO4–xCaTiO3 composite ceramics

Phase formation, microstructure and microwave dielectric properties of (1 ? x)(Mg_0.4Zn_0.6)₂SiO₄–xCaTiO₃ (MZS-C) composite ceramics synthesized by using the conventional solid-state method were systematically investigated. Three phase structure was observed in all samples by using X-ray diffraction and the back scattering electron images. Mg₂SiO₄ can form a solid solution with Zn₂SiO₄, which improved sinterability of the MZS-C composite ceramics. As the CaTiO₃ content was increased from 0.06 to 0.14, dielectric constant ε _r and temperature coefficient of resonant frequency τ _f values of the MZS-C ceramics sintered at 1,180 °C for 4 h increased from 6.74 to 8.35 and ?41.5 to ?6.46 ppm/°C, respectively. Zero τ _f value can be obtained by properly adjusting the x value of the (1 ? x)MZS–xC ceramics. With increasing content of CaTiO₃, densification temperatures of the composite ceramics were decreased. The composite ceramic with x = 0.14 sintered at 1,180 °C for 4 h exhibited excellent microwave dielectric properties of ε _r = 8.35, Q × f = 28,125 GHz and τ _f = ?6.46 ppm/°C.     

Preparation of forsterite-based glass ceramics for LTCC from potassium feldspar

A forsterite-based glass ceramic material has been developed from potassium feldspar for low temperature co-fired ceramics (LTCC). The crystalline phases and microstructure of forsterite-based glass ceramics were investigated using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The results show only forsterite was formed in temperature range 900–1,050 °C, and sapphirine was formed in temperature range 1,080–1,100 °C. The glass compact could be well densified at 950 °C, and full densification samples were obtained in temperature range 1,000–1,050 °C. The physical properties including dielectric properties, bending strength and thermal expansion of the specimens were also evaluated. The dielectric constants are in the range 7.00–8.25 and dielectric loss is below 0.01 in the frequency range 1–10 MHz. The specimens obtained in temperature range 950–1,100 °C are of high bending strength (69–106 MPa). The linear coefficient of thermal expansion of the specimen sintered at 1,080 °C is 9.76 × 10^?6 K^?1. All of these qualify the forsterite-based glass ceramic for further investigation as a candidate suitable for applications in LTCC field.     

Bi2MoO6 dielectric thin films fabricated by thermal oxidation of Bi/Mo thin films at ultra-low temperature

Bi/Mo multilayer thin films are deposited on Si/SiO₂/Pt substrates by direct current magnetron sputtering. The effect of annealing temperature on the microstructure, dielectric and electrical properties of the as-sputtered films is characterized systematically. X-ray diffraction data indicate that the films annealed at 450–600 °C are a mixture of diphase with the main phase Bi₂MoO₆ and secondary phase Bi₂Mo₂O₉. Results of scanning electron microscope observation show that the films annealed at 500–550 °C are dense and uniform, in particular the films annealed at 500 °C exhibit optimal dielectric and electrical properties with dielectric constant as high as 37.5, dielectric loss 1.06 %, temperature coefficient of dielectric constant ?10.86 ppm °C^?1 at 1 kHz, and leakage current density of 1.46 × 10^?7 A mm^?2 at an electric field of 18.2 kV mm^?1. With the advantages of ultralow densification temperature (500 °C) and very high sputtering deposition rate (76 nm min^?1), it is anticipated that thermal oxidation method of the sputtered Bi/Mo thin films could be a promising technique for fabrication of Bi₂MoO₆ ceramic thin film embedded-capacitors.     

Structural and electrical properties of V-doped ZnO prepared by the solid state reaction

This paper reports the synthesis, crystal structure and electrical conductivity properties of vanadium (V)-doped zinc oxide (ZnO) powders (i.e. Zn_1?2X V _X O binary system, x = 0, 0.0025, 0.005, 0.0075 and in the range 0.01 ≤ x ≤ 0.15). I-phase samples, which were indexed as single phase with a hexagonal (wurtzite) structure in the V-doped ZnO binary system, were determined by X-ray diffraction (XRD). The limit solubility of V in the ZnO lattice at this temperature is 3 mol % at 950 °C. The impurity phase at 950 °C was determined as ZnV₂O₆ when compared with standart XRD data. The research focused on single I-phase ZnO samples which were synthesized at 950 °C because of the limit of the solubility range is widest at this temperature. It was observed that the lattice parameters a and c decreased with V doping concentration. The electrical conductivity of the pure ZnO and single I-phase samples were studied using the four-point probe dc method at temperatures between 100 and 950 °C in an air atmosphere. The electrical conductivity values of pure ZnO and 3 mol % V-doped ZnO samples at 100 °C were 2.75 × 10^?6 and 7.94 × 10^?5 Ω^?1 cm^?1, and at 950 °C they were 3.4 and 54.95 Ω^?1 cm^?1, respectively. In other words, the electrical conductivity increased with V doping concentration.     

Tuning the microwave dielectric properties of La(Mg0.4Sr0.1Sn0.5)O3 by introducing Ca0.8Sr0.2TiO3

The influence of sintering temperature on the microwave dielectric properties and microstructure of the (1 ? y)La(Mg_0.4Sr_0.1Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramic system were investigated with a view to their application in microwave devices. The (1 ? y)La(Mg_0.4Sr_0.1Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramic systems were prepared using the conventional solid-state method. The X-ray diffraction patterns of the (1 ? y)La(Mg_0.4Sr_0.1Sn_0.5)O₃–yCa_0.8Sr_0.2TiO₃ ceramic system shifted to higher angle as y increased. A dielectric constant of 41.2, a quality factor (Q × f) of 56,900 GHz, and a temperature coefficient of resonant frequency of ?6 ppm/ °C were obtained when the 0.4La(Mg_0.4Sr_0.1Sn_0.5)O₃–0.6Ca_0.8Sr_0.2TiO₃ ceramic system was sintered at 1,550 °C for 4 h.     

Phase transition,ferroelectric and piezoelectric properties of Bi(Mg0.5Zr0.5)O3-modified BiFeO3–BaTiO3 lead-free ceramics

(0.725 ? x)BiFeO₃–0.275BaTiO₃–xBi(Mg_0.5Zr_0.5)O₃ + 1 mol% MnO₂ lead-free ceramics (x = 0–0.08) were synthesized by a conventional solid state reaction method and the effects of Bi(Mg_0.5Zr_0.5)O₃ on phase transition, piezoelectric and ferroelectric properties of the ceramics were investigated. After the addition of Bi(Mg_0.5Zr_0.5)O₃, the crystal structure of the ceramics is transformed from rhombohedral to tetragonal phase and the morphotropic phase boundary (MPB) of rhombohedral and tetragonal phase is formed at x = 0.01. The grain size of the ceramics increases with x increasing from 0 to 0.02 and then decreases with x further increasing. The dielectric peak of the ceramics becomes diffusive with x increasing after the addition of Bi(Mg_0.5Zr_0.5)O₃. The ceramics with x = 0–0.08 exhibit much better electric insulation with the resistivity of 1.0 × 10⁹–5.0 × 10⁹ Ω·cm than pure BiFeO₃ ceramic with the resistivity of ~5 × 10⁷ Ω·cm. Due to the formation of the MPB, the ceramics with x = 0–0.02 possess good densification with the relative densities ρ _r of 94.9–96.3 %, strong piezoelectricity with the d ₃₃ of 129–135 pC/N and very high Curie temperature with the T _C of 559–610 °C.     

Effect of calcination temperature on structure and thermoelectric properties of CuAlO<Subscript>2</Subscript> powders

Copper aluminum oxide (CuAlO₂) with delafossite phase was synthesized by the Pechini method using different calcination temperatures to evaluate its influence on the structure and thermoelectric material properties. X-ray diffraction and Raman spectroscopy confirm that delafossite phase was formed at 1100 °C with the presence of 2H-CuAlO₂ and Al₂O₃ impurities, while at lower calcination temperatures (900 and 1000 °C), a mixture of CuO + CuAl₂O₄ (spinel phase) was observed. Energy-dispersive X-ray elemental maps display an even distribution of copper, aluminum and oxygen in the sample calcined at 1100 °C. Direct optical band gap, E _g = 3.6 eV, was calculated from reflectance diffuse spectra by Kubelka–Munk and Tauc methods. An absorption band at 1.7 eV accounts for defect levels, masking the characteristic indirect transition. The thermoelectric properties, such as Seebeck coefficient, and thermal and electrical conductivities of the sample calcined at 1100 °C were measured at different temperatures. Hall voltage and positive values of the Seebeck coefficient (425.8–434.4 µV K^?1) confirm the material’s p-type character. The independence of the Seebeck coefficient on the operation temperature indicates a small polaron electrical conduction mechanism. Thermal conductivity decreases exponentially with the temperature from 43.45 to 23.9 W m^?1 K^?1, where the principal contribution is due to phonons. Figure of merit ZT of sample calcined at 1100 °C between 100 and 800 °C increases from 1.42 × 10^?8 to 4.94 × 10^?4 in the order of the literature reports. From the Arrhenius plot ln(σT) versus 1000/T, an activation energy E _a = 0.32 eV for the electrical conductivity was calculated.     

Tuning the microwave dielectric properties of La0.97Sm0.03(Mg0.5Sn0.5)O3 by adding Ca0.8Sm0.4/3TiO3

The influence of sintering temperature on the microwave dielectric properties and microstructure of the (1 ? y)La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃–yCa_0.8Sm_0.4/3TiO₃ ceramic system were investigated with a view to their application in microwave devices. The (1 ? y)La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃–yCa_0.8Sm_0.4/3TiO₃ ceramic systems were prepared using the conventional solid-state method. The X-ray diffraction (XRD) patterns of the (1 ? y)La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃–yCa_0.8Sm_0.4/3TiO₃ ceramic system did not significantly vary with sintering temperature. The XRD patterns of the (1 ? y)La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃–yCa_0.8Sm_0.4/3TiO₃ ceramic system shifted to higher angle as y increased. A dielectric constant of 37.5, a quality factor (Q × f) of 40,300 GHz, and a temperature coefficient of resonant frequency of 2.4 ppm/°C were obtained when the 0.425La_0.97Sm_0.03(Mg_0.5Sn_0.5)O₃–0.575Ca_0.8Sm_0.4/3TiO₃ ceramic system was sintered at 1,600 °C for 4 h.     

Growth kinetics of the θ phase in AlCu thin film bilayers

The growth kinetics of the θ (Al₂Cu) phase in AlCu thin film bilayers were studied by MeV He⁺ backscattering and X-ray diffraction. In the temperature range 160–200°C the growth is diffusion limited with an activation energy of 1.02 eV and a pre-exponential factor of 7 × 10^?3cm²s^?1. Nucleation of the γ₂ phase occurs at 200°C with long annealing times. There is no evidence of the presence of other phases in the investigated temperature range.