Variation of optical band gap with radiation dose in PbO-B2O3 glasses

The effect of dose variation of γ-irradiation on optical band gap of PbO-B₂O₃ glasses have been studied in the wavelength region from 200 to 1200 nm. Absorption of glasses in near ultraviolet/visible have been used to calculate the optical mobility gap and width of tail before and after irradiation. The decrease in transmission due to irradiation indicates the formation of colour centers and structural changes in glass matrix. The optical spectrum has been measured before irradiation and in 50 Gy-50 kGy absorbed dose range.     

Effect of Ag and Li ion irradiation on superconducting Tl2Ca2Ba2Cu3O10 single crystals

The effect of irradiation by 50 MeV Li³⁺ and 200 MeV Ag¹⁵⁺ ions on single crystals of Tl₂Ca₂Ba₂Cu₃O₁₀ (Tl2223) superconductor has been investigated at different fluences. Isothermal magnetization hysteresis loops have been recorded at different temperatures using a SQUID magnetometer and the effect of irradiation on the critical current density, irreversible field, second magnetization peak and pinning force has been studied. Irradiation by 200 MeV Ag¹⁵⁺ ions resulted in increased hysteresis and irreversibility field while no change in second magnetization peak position and critical temperature was observed. A broadening in the hysteresis loop before the second magnetization peak was also observed for the crystals irradiated by Li³⁺ ions. Annealing of irradiated crystals at 500 °C resulted in reduction of point defects created by Li³⁺ ions.     

Effect of 200 MeV Ag ion irradiation on structural and electrical transport properties of Fe3O4 thin films

Thin films of Fe₃O₄ have been deposited on single crystal MgO(1 0 0) and Si(1 0 0) substrates using pulsed laser deposition. Films grown on MgO substrate are epitaxial with c-axis orientation whereas, films on Si substrate are highly 〈1 1 1〉 oriented. Film thicknesses are 150 nm. These films have been irradiated with 200 MeV Ag ions. We study the effect of the irradiation on structural and electrical transport properties of these films. The fluence value of irradiation has been varied in the range of 5 × 10¹⁰ ions/cm² to 1 × 10¹² ions/cm². We compare the irradiation induced modifications on various physical properties between the c-axis oriented epitaxial film and non epitaxial but 〈1 1 1〉 oriented film. The pristine film on Si substrate shows Verwey transition (T_V) close to 125 K, which is higher than generally observed in single crystals (121 K). After the irradiation with the 5 × 10¹⁰ ions/cm² fluence value, T_V shifts to 122 K, closer to the single crystal value. However, with the higher fluence (1 × 10¹² ions/cm²) irradiation, T_V again shifts to 125 K.     

Enthalpy measurements of La2Te3O9 and La2Te4O11

Enthalpy increment measurements on La₂Te₃O₉(s) and La₂Te₄O₁₁(s) were carried out using a Calvet micro-calorimeter. The enthalpy values were analyzed using the non-linear curve fitting method. The dependence of enthalpy increments with temperature was given as: H°(T) − H°(298.15 K) (J mol⁻¹) = 360.70T + 0.00409T² + 133.568 × 10⁵/T − 149 923 (373 ? T (K) ? 936) for La₂Te₃O₉ and H°(T) − H°(298.15 K) (J mol⁻¹) = 331.927T + 0.0549T² + 29.3623 × 10⁵/T − 114 587 (373 ? T (K) ? 936) for La₂Te₄O₁₁.     

Amorphisation of ZnAl2O4 spinel under heavy ion irradiation

ZnAl₂O₄ spinels have been irradiated with several ions (Ne, S, Kr and Xe) at the IRRSUD beamline of the GANIL facility, in order to determine irradiation conditions (stopping power, fluence) for amorphisation. We observed by transmission electron microscopy (TEM) that with Xe ions at 92 MeV, individual ion tracks are still crystalline, whereas an amorphisation starts below a fluence of 5 × 10¹² cm⁻² up to a total amorphisation between 1 × 10¹³ and 1 × 10¹⁴ cm⁻². The coexistence of amorphous and crystalline domains in the same pristine grain is clearly visible in the TEM images. All the crystalline domains remain close to the same orientation as the original grain. According to TEM and X-ray Diffraction (XRD) results, the stopping power threshold for amorphisation is between 9 and 12 keV nm⁻¹.     

A cubic-to-monoclinic structural transformation in the sesquioxide Dy2O3 induced by ion irradiation

Polycrystalline pellets of the sesquioxide Dy₂O₃ were irradiated at cryogenic temperature with Kr⁺⁺ ions to a fluence of 1 × 10²⁰ Kr/m². The crystal structure of the irradiated Dy₂O₃ was observed to change from a cubic, so-called C-type rare-earth sesquioxide structure to a monoclinic, B-type rare-earth sesquioxide structure upon ion irradiation. This transformation is accompanied by a decrease in molecular volume (or density increase) of approximately 9%.     

Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu₂O₃ on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu₂O₃ has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu₂O₃ films. The thicknesses of the Lu₂O₃ films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.     

Effects of swift heavy ion irradiation on the structure of Er2O3-doped CeO2

In order to simulate the effects of burnable poison doping on the fission fragment damage of UO₂ nuclear fuels, Er₂O₃-doped CeO₂ pellets were irradiated with 200 MeV Xe¹⁴⁺ ions. The irradiation effect was measured by means of X-ray diffraction (XRD). The expansion of lattice and the disordering of atomic arrangement due to the irradiation become more remarkable with increasing the concentration of the Er₂O₃ dopant.     

Reactivity of hydrogen peroxide towards Fe3O4, Fe2CoO4 and Fe2NiO4

The kinetics of CRUD oxidation by H₂O₂ has been studied using aqueous suspensions of metal oxide powder. Fe₃O₄, Fe₂CoO₄ and Fe₂NiO₄ were used as model compounds for CRUD. In addition, the activation energies for the reaction between H₂O₂ and the three CRUD models were determined. The rate constants at room temperature were determined to 6.6 (±0.4) × 10⁻⁹, 3.4 (±0.4) × 10⁻⁸ and 1.6 × 10⁻¹⁰ m min⁻¹ for Fe₃O₄, Fe₂CoO₄ and Fe₂NiO₄, respectively. The corresponding activation energies are 52 ± 4, 44 ± 5 and 57 ± 7 kJ mol⁻¹, respectively. The mechanism of the reaction is briefly discussed indicating that the final solid product in all three cases is Fe₂O₃. In addition to the experimental studies, the theoretical grounds for kinetics of reactions in particle suspensions are discussed. The theoretical discussion is also used to explain the somewhat unexpected trends in reactivity observed experimentally.     

γ-Irradiation effects on the optical properties of amorphous Ge10As30Se60 thin films

Amorphous Ge₁₀As₃₀Se₆₀ thin films on glass substrates were prepared by thermal evaporation method. The effect of γ-irradiation on the optical properties of the amorphous Ge₁₀As₃₀Se₆₀ thin films was studied in the spectral range from 200 nm to 1100 nm. γ-Radiation-induced bleaching was observed after irradiation of the samples for doses up to 50 kGy. An increase in transmission and a shift in the (transmission) absorption edge towards higher energies were observed with the irradiation dose. An increase in the optical energy gap with irradiation dose was also observed in the studied range. Photo-bleaching due to γ-irradiation was discussed in light of the structural aspects and configurational-coordinate model for Ge-As-Se.     

Nanoparticles of Al2O3:Cr as a sensitive thermoluminescent material for high exposures of gamma rays irradiations

Aluminum Oxide (Al₂O₃) doped with proper activators is a highly sensitive phosphor commonly used for radiation dosimetry using thermoluminescence (TL) technique. Nanoparticles of this material activated with Chromium (Cr) have been synthesized using the propellant chemical combustion technique and studied for their TL response. They were characterized by X-ray diffraction and scanning electron microscope. The synthesized material has spherical nanoparticles with grain size around 25 nm. These nanoparticles were exposed to heavy doses from γ-rays of ¹³⁷Cs. The TL glow curves show a prominent peak at around 474 K. This peak is found to be sensitive for high exposures of γ-rays and has linear response in the range of 100 Gy-20 kGy without showing saturation. This remarkable result suggests that Al₂O₃:Cr nanoparticles might be used for the dosimetry of food and seed irradiations.     

Secondary electron yield of Au and Al2O3 surfaces from swift heavy ion impact in the 2.5-7.9 MeV/amu energy range

We report on the secondary electron yields of Au and oxidized aluminum (Al₂O₃) by impact of heavy ions with energies ranging from 7.92 MeV/amu (¹²C₆) to 2.54 MeV/amu (¹⁰⁷Ag₄₇). The obtained results, the first in this energy range using medium-heavy ions, extend the validity of proposed scaling laws obtained with lighter ions. Measurements have been performed using the SIRAD irradiation facility at the 15 MV Tandem of the INFN Laboratory of Legnaro (Italy), to evaluate the performance of ion electron emission microscopy at SIRAD.     

Photoluminescence and XEL in Y2O3:Eu phosphor

Eu-activated Y₂O₃ phosphors were prepared by combustion synthesis and also by precipitation techniques. Photoluminescence and X-ray excited luminescence of prepared Y₂O₃:Eu phosphor, under two different techniques were compared and reported in this paper. Y₂O₃:Eu³⁺ phosphor were prepared by precipitation technique followed by annealing at 900 °C. It gives cubic nature of the particle that may be more favourable for high lumen output. X-ray excited luminescence of Y₂O₃:Eu³⁺ phosphors also reported in this paper.     

In situ studies of ion irradiated inverse spinel compound magnesium stannate (Mg2SnO4)

Magnesium stannate spinel (Mg₂SnO₄) was synthesized through conventional solid state processing and then irradiated with 1.0 MeV Kr²⁺ ions at low temperatures 50 and 150 K. Structural evolutions during irradiation were monitored and recorded through bright field images and selected-area electron diffraction patterns using in situ transmission electron microscopy. The amorphization of Mg₂SnO₄ was achieved at an ion dose of 5 × 10¹⁹ Kr ions/m² at 50 K and 10²⁰ Kr ions/m² at 150 K, which is equivalent to an atomic displacement damage of 5.5 and 11.0 dpa, respectively. The spinel crystal structure was thermally recovered at room temperature from the amorphous phase caused by irradiation at 50 K. The calculated electronic and nuclear stopping powers suggest that the radiation damage caused by 1 MeV Kr²⁺ ions in Mg₂SnO₄ is mainly due to atomic displacement induced defect accumulation. The radiation tolerance of Mg₂SnO₄ was finally compared with normal spinel MgAl₂O₄.     

Damage evolution in Au-implanted Ho2Ti2O7 titanate pyrochlore

Damage evolution at room temperature in Ho₂Ti₂O₇ single crystals is studied under 1 MeV Au²⁺ ion irradiation by Rutherford backscattering spectroscopy along the 〈0 0 1〉 direction. For a better determination of ion-induced disorder profile, an iterative procedure and a Monte Carlo code (McChasy) were used to analyze ion channeling spectra. A disorder accumulation model, with contributions from the amorphous fraction and the crystalline disorder, is fit to the Ho damage accumulation data. The damage evolution behavior indicates that the relative disorder on the Ho sublattice follows a nonlinear dependence on dose and that defect-stimulated amorphization is the primary amorphization mechanism. Similar irradiation behavior previously was observed in Sm₂Ti₂O₇. A slower damage accumulation rate for Ho₂Ti₂O₇, as compared with damage evolution in Sm₂Ti₂O₇, is mainly attributed to a lower effective cross section for defect-stimulated amorphization.     

Change in magnetic properties of MgB2 thin films after irradiation by 200 MeV Au ion beam

The SHI irradiation induced effects on magnetic properties of MgB₂ thin films are reported. The films having thickness 300-400 nm, prepared by hybrid physical chemical vapor deposition (HPCVD) were irradiated by 200 MeV Au ion beam (S_e ∼ 23 keV/nm) at the fluence 1 × 10¹² ion/cm². Interestingly, increase in the transition temperature T_c from 35.1 K to 36 K resulted after irradiation. Substantial enhancement of critical current density after irradiation was also observed because of the pinning provided by the defects created due to irradiation. The change in surface morphology due to irradiation is also studied.     

γ辐照联合H_2O_2处理污泥滤液的研究

采用60 Coγ射线辐照处理污泥滤液,通过对比处理前后化学需氧量(COD)、紫外可见吸光度和浑浊度的变化,研究了辐照处理中初始pH、初始H2O2浓度和吸收剂量对污泥滤液处理效果的影响。结果表明:在相同吸收剂量和初始H2O2浓度条件下,酸性条件更利于CODCr的降低;γ辐照联合H2O2处理存在显著协同效应,吸收剂量为18.75kGy、初始H2O2浓度为2mmol/L时,污泥滤液CODcr去除率达70.4%,浑浊度下降94.9%。     

Absorption and photoluminescence study of Al2O3 single crystal irradiated with fast neutrons

Colour centers formation in Al₂O₃ by reactor neutrons were investigated by optical measurements (absorption and photoluminescence). The irradiation’s were performed at 40 °C, up to fast neutron (E_n > 1.2 MeV) fluence of 1.4 × 10¹⁸ n cm⁻². After irradiation the coloration of the sample increases with the neutron fluence and absorption band at about 203, 255, 300, 357 and 450 nm appear in the UV-visible spectrum. The evolution of each absorption bands as a function of fluence and annealing temperature is presented and discussed. The results indicate that at higher fluence and above 350 °C the F⁺ center starts to aggregate to F center clusters (F₂, F₂⁺ and ). These aggregates disappear completely above 650 °C whereas the F and F⁺ centers persist even after annealing at 900 °C. It is clear also from the results that the absorption band at 300 nm is due to the contribution of both F₂ center and interstitial ions.     

Formation of planar waveguide in BiB3O6 crystal by MeV carbon implantation

Non-leaky planar waveguide structure has been fabricated in x-cut BiB₃O₆ crystal by 6 MeV C³⁺ ion implantation at a dose of 1 × 10¹⁴ ions/cm². The effective refractive indices of the waveguide are measured at a wavelength of 632.8 nm. We perform a computer code based on the finite difference method to reconstruct the refractive index profiles of n_x and n_y of this waveguide. The beam propagation method is used to calculate the electric and magnetic field profiles in the waveguide region from the reconstructed refractive index profiles. Our simulated data show that the refractive index increased waveguide layer can confine the mode completely.     

Irradiation effects of a 10 MeV neutron beam on a Nd-Fe-B permanent magnet

The effects of irradiation of a Nd-Fe-B permanent magnet by fast neutrons was investigated. The decrease in measured magnetic flux density at the center of the magnets were 0.6%, 6.9%, 25.2% and 47.3% after continuous irradiation of 1.1 kGy, 3.7 kGy, 5.6 kGy and 7.4 kGy, respectively. On the other hand, the decrease due to non-continuous irradiation, in which the magnet was first irradiated at 3.7 kGy, then irradiated again at 3.7 kGy nine months later, was 14% smaller than that of continuous irradiation, even for the same total dose. The temperature coefficient of the magnetization did not change with irradiation. Some radioactive materials, such as ¹⁴⁷Nd, ¹⁵¹Pm, and ⁵⁴Mn, were detected in the magnet after irradiation.