铁电材料的研究进展

铁电材料的优秀电学性能孕育了它广阔的应用前景,其电子元件有着集成度高、能耗小、响应速度快等众多优点。而且目前研究者将铁电材料同其它技术相结合,使新诞生的集成铁电材料性能更为优秀。介绍了铁电材料的发展历史和当前的研究概况。详细描述了几种铁电材料的性能特点与研究进展,包括压电材料及在微机电系统中的应用,储能用铁电介质材料,有机铁电薄膜材料,具备2种以上初级铁性体特征的多铁材料,铁电阻变材料等。最后,总结了铁电材料研究中尚未解决的技术问题,并展望了铁电材料的发展趋势。     

小温差情况下温度梯度铁电材料零极化偏移现象的理论验证

采用平均场近似下的横场伊辛模型理论,引入描述铁电畸变的分布函数,同时考虑量子起伏效应,研究了温度梯度铁电材料的极化偏移特性,重点针对小温差情况下温度梯度铁电材料极化偏移消失的实验现象进行了理论验证。研究表明,温度梯度的存在导致了材料内部的极化强度的梯度分布,量子起伏效应对温度梯度铁电材料的性质有十分重要的影响,本工作关于温度梯度铁电材料极化偏移的研究结果与实验研究取得了定性一致的结论。当同时在考虑铁电畸变和量子起伏效应时,小温差情况下温度梯度铁电材料极化偏移消失的实验现象得以验证。     

铁电材料的电热效应及其研究进展

近年来基于电热效应的绝热退极化制冷技术以环保、高效、可靠等特性受到了国内外的广泛关注。介绍了铁电材料的电热制冷机制,系统概括了不同类型和结构的铁电材料的电热效应方面的国内外研究进展,分析了存在的主要问题以及可能的解决方法,并对铁电材料在制冷方面的实际应用进行了展望。     

PZT铁电薄、厚膜及其制备技术研究进展

铁电薄、厚膜材料具有良好的铁电、压电、热释电、电光及非线性光学特性,在微电子学、光电子学、集成光学和微电子机械系统等领域有许多重要的应用.近年来,随着铁电薄、厚膜制备技术的发展,PZT厚膜材料及厚膜器件成为科学工作者研究的热点.介绍了PZT铁电薄、厚膜材料与器件的研究进展以及PZT铁电薄、厚膜制备技术及几种典型的PZT铁电薄、厚膜材料制备技术的特点,并指出了目前存在的一些问题和未来的发展方向.     

Ferroelectric and Piezoelectric Effects on the Optical Process in Advanced Materials and Devices

Piezoelectric and ferroelectric materials have shown great potential for control of the optical process in emerging materials. There are three ways for them to impact on the optical process in various materials. They can act as external perturbations, such as ferroelectric gating and piezoelectric strain, to tune the optical properties of the materials and devices. Second, ferroelectricity and piezoelectricity as innate attributes may exist in some optoelectronic materials, which can couple with other functional features (e.g., semiconductor transport, photoexcitation, and photovoltaics) in the materials giving rise to unprecedented device characteristics. The last way is artificially introducing optical functionalities into ferroelectric and piezoelectric materials and devices, which provides an opportunity for investigating the intriguing interplay between the parameters (e.g., electric field, temperature, and strain) and the introduced optical properties. Here, the tuning strategies, fundamental mechanisms, and recent progress in ferroelectric and piezoelectric effects modulating the optical properties of a wide spectrum of materials, including lanthanide‐doped phosphors, quantum dots, 2D materials, wurtzite‐type semiconductors, and hybrid perovskites, are presented. Finally, the future outlook and challenges of this exciting field are suggested.     

Multifunctional solid state lasers based on ferroelectric crystals

From the appearance of the laser, 50 years ago, the use of ferroelectric crystals in optical devices has constituted a field of much interest and activity. Ferroelectric materials have been employed successfully in nonlinear passive optical systems such as frequency mixers, optical parametric oscillators, and modulators of light.In the last years it has been demonstrated that several ferroelectric materials can also operate as active optical systems generating laser action when the suitable optically active impurities are incorporated into the crystals.Here, it will be shown how some important features offered by ferroelectric materials (nonlinearity, presence of ferroelectric domains, phase transition, thermal hysteresis, …) can be exploited in order to provide solid state lasers with a reliable multifunctional optical character.     

铁电阴极材料电子发射机理实验研究(英文)

作为一种新型功能材料,为获得更高的电子发射电流密度和更好的电子束品质,对于铁电电子发射机理的探讨,一直方兴未艾.针对采用锆钛酸铅、钛酸钡和钛酸铋钠这3种不同铁电阴极材料,进行了电子发射实验,并着重对样品电子发射前后的宏微观变化进行了对比分析.认为不同种类的铁电材料遵循不同的电子发射机理,等离子体在发射过程中起着重要作用.对于钛酸钡材料,电子发射以等离子体致电子发射为主;对于钛酸铋钠材料,电子发射以快极化反转电子发射为主;而对于锆钛酸铅材料,2种机理作用兼而有之.     

Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density

Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch(-2). The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 degrees C, which results in excellent ferroelectric properties.     

A decade of piezoresponse force microscopy: progress, challenges, and opportunities

Coupling between electrical and mechanical phenomena is a near-universal characteristic of inorganic and biological systems alike, with examples ranging from piezoelectricity in ferroelectric perovskites to complex, electromechanical couplings in electromotor proteins in cellular membranes. Understanding electromechanical functionality in materials such as ferroelectric nanocrystals and thin films, relaxor ferroelectrics, and biosystems requires probing these properties on the nanometer level of individual grain, domain, or protein fibril. In the last decade, piezoresponse force microscopy (PFM) was established as a powerful tool for nanoscale imaging, spectroscopy, and manipulation of ferroelectric materials. Here, we present principles and recent advances in PFM, including vector and frequency-dependent imaging of piezoelectric materials, briefly review applications for ferroelectric materials, discuss prospects for electromechanical imaging of local crystallographic and molecular orientations and disorder, and summarize future challenges and opportunities for PFM emerging in the second decade since its invention     

Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

We present in this article a review of the status of thin film ferroelectric materials for nonvolatile memories. Key materials issues relevant to the integration of these materials on Si wafers are discussed. The effect of film microstructure and electrode defect chemistry on the ferroelectric properties relevant to a high density nonvolatile memory technology are discussed. The second part of this review focuses on approaches to integrate these capacitor structures on a filled poly-Si plug which is a critical requirement for a high density memory technology. Finally, the use of novel surface probes to study and understand broadband polarization dynamics in ferroelectric thin films is also presented.     

FeTRAM. An organic ferroelectric material based novel random access memory cell

Science and technology in the electronics area have always been driven by the development of materials with unique properties and their integration into novel device concepts with the ultimate goal to enable new functionalities in innovative circuit architectures. In particular, a shift in paradigm requires a synergistic approach that combines materials, devices and circuit aspects simultaneously. Here we report the experimental implementation of a novel nonvolatile memory cell that combines silicon nanowires with an organic ferroelectric polymer-PVDF-TrFE-into a new ferroelectric transistor architecture. Our new cell, the ferroelectric transistor random access memory (FeTRAM) exhibits similarities with state-of-the-art ferroelectric random access memories (FeRAMs) in that it utilizes a ferroelectric material to store information in a nonvolatile (NV) fashion but with the added advantage of allowing for nondestructive readout. This nondestructive readout is a result of information being stored in our cell using a ferroelectric transistor instead of a capacitor-the scheme commonly employed in conventional FeRAMs.     

New developments on FRAMs: [3D] structures and all-perovskite FETs

A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.     

BST/YIG复合材料的相结构、介电性能和磁性能的研究

以铁电性的钛酸锶钡（BST）和铁磁性钇铁氧体（YIG）为原料,采用固相反应法,合成了一系列铁电/铁磁复合材料,并对铁电/铁磁复合材料（YIG/BST）的介电性能和磁性能进行了详细地研究. 结果表明：在一定温度下烧结所得的铁电/铁磁复合材料,由铁电相和铁磁相两相组成;xBST-(1-x)YIG(x=0,0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8,0.9,1.0)复合材料具有良好的介电性能和磁性能, 其介电常数实部ε′与虚部ε″均随BST含量的增加而升高,且介电常数的谐振峰随着YIG含量的增加而向频率高的方向移动.磁导率实部μ′与虚部μ″均随BST含量的增加而降低. 在YIG铁氧体中加入适量的陶瓷BST构成复合材料,可以有效地改善截止频率,提高高频电磁特性.     

Exploring Anomalous Polarization Dynamics in Organometallic Halide Perovskites

Organometallic halide perovskites (OMHPs) have attracted broad attention as prospective materials for optoelectronic applications. Among the many anomalous properties of these materials, of special interest are the ferroelectric properties including both classical and relaxor‐like components, as a potential origin of slow dynamics, field enhancement, and anomalous mobilities. Here, ferroelectric properties of the three representative OMHPs are explored, including FAPb_xSn_1–xI₃ (x = 0, x = 0.85) and FA_0.85MA_0.15PbI₃ using band excitation piezoresponse force microscopy and contact mode Kelvin probe force microscopy, providing insight into long‐ and short‐range dipole and charge dynamics in these materials and probing ferroelectric density of states. Furthermore, second‐harmonic generation in thin films of OMHPs is observed, providing a direct information on the noncentrosymmetric polarization in such materials. Overall, the data provide strong evidence for the presence of ferroelectric domains in these systems; however, the domain dynamics is suppressed by fast ion dynamics. These materials hence present the limit of ferroelectric materials with spontaneous polarization dynamically screened by ionic and electronic carriers.     

不挥发铁电存储器的最新发展

铁电材料具有自发极化并可由外电场反转，因此可以构成一种不挥发存储器．铁电薄膜与半导体集成，产生铁电随机存储器，并将成为存储器技术的主体．     

First-principles based modelling of ferroelectrics

The application of first-principles computational methods to the study of ferroelectric perovskites has greatly expanded our theoretical understanding of this important class of materials. These methods have most recently been applied to an increasingly wide range of ferroelectric materials, with special attention to their lattice dynamics, phase transitions, dielectric and piezoelectric properties, and to the study of defects and surfaces.     

强发射电流铁电阴极真空二极管试验装置的研制

铁电阴极材料,作为一种新型功能材料,因其发射电流密度高且对使用环境无苛刻要求,而得到各国高度重视.为了测试其电流发射密度,作者研制了铁电阴极真空二极管试验装置,并加以改进,然后将锆钛酸铅(PZT)铁电材料封装入二极管中,进行电子发射试验研究.结果表明,所研制的真空二极管,其真空度达到了试验要求,屏蔽了地电流信号对样品信号的干扰,达到了强电流铁电阴极材料发射电流密度测试的基本要求,为铁电阴极材料在真空二极管中的实用化奠定了基础.     

Tunnel junctions with multiferroic barriers

Multiferroics are singular materials that can exhibit simultaneously electric and magnetic orders. Some are ferroelectric and ferromagnetic and provide the opportunity to encode information in electric polarization and magnetization to obtain four logic states. However, such materials are rare and schemes allowing a simple electrical readout of these states have not been demonstrated in the same device. Here, we show that films of La(0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm. We have integrated such ultrathin multiferroic films as barriers in spin-filter-type tunnel junctions that exploit the magnetic and ferroelectric degrees of freedom of LBMO. Whereas ferromagnetism permits read operations reminiscent of magnetic random access memories (MRAM), the electrical switching evokes a ferroelectric RAM write operation. Significantly, our device does not require the destructive ferroelectric readout, and therefore represents an advance over the original four-state memory concept based on multiferroics.     

Multifractal properties of grain structures in sodium niobate based binary ceramics with nonisostructural components

The process of grain structure formation and development in ferroelectric ceramics based on sodium noiobate are considered. Micrographs of the grain boundary regions are described in terms of multifractal parameters. Correlations between the multifractal and structural parameters of ferroelectric niobate ceramics are found. The process of secondary interrupted recrystallization has been studied. The results have been used for optimization of the technology of novel ferroelectric materials.     

Progress in synthesis of ferroelectric ceramic materials via high-energy mechanochemical technique

Ferroelectric ceramics are important electronic materials that have a wide range of industrial and commercial applications, such as high-dielectric constant capacitors, piezoelectric sonar or ultrasonic transducers, pyroelectric security sensors, medical diagnostic transducers, electro-optical light valves, and ultrasonic motors, to name a few. The performances of ferroelectrics are closely related to the ways they are processed. The conventional solid state reaction method requires high calcination and sintering temperatures, resulting in the loss of lead, bismuth or lithium components due to their high volatilities, thus worsening the microstructural and subsequently the electrical properties of the ferroelectric materials. Various wet chemistry based routes have been developed to synthesize ultra-fine and even nano-sized ferroelectric powders. However, most of the chemistry based routes still involve calcinations, although at relatively lower temperatures. High energy mechanochemical milling process has been shown that some ferroelectric materials can be synthesized directly from their oxide precursors in the form of nano-sized powders, without the need for the calcination at intermediate temperatures, thus making the process very simple and cost-effective. A large number of ferroelectric materials, including lead-containing ferroelectrics, antiferroelectrics and relaxors, and bismuth-containing Aurivillius families, have been synthesized by the high-energy milling process. Some ferroelectrics, such as barium titanate (BaTiO₃ or BT), lead iron tungstate [Pb(Fe_2/3W_1/3)O₃ or PFW], and several bismuth-containing materials, that cannot be directly produced from their oxide mixtures, have been formed at relatively low temperature after their precursors are activated by an high-energy milling. Ferroelectric ceramics derived from the activated precursors demonstrated better microstructure and electrical properties than those without mechanochemical treatment. This review presents an overview of the recent progress in the synthesis of ferroelectric ceramic powders using various high-energy milling techniques. The progress includes several aspects: (i) direct synthesis of nano-sized powders with better sinterability, (ii) promoted reactive sintering due to the modification of the precursors, (iii) amorphization of the precursors, and (iv) refinement of the precursors with high homogeneity. The underlying mechanisms of mechanochemical synthesis of ferroelectric materials are discussed. Further research emphasizes on issues related to the synthesis of ferroelectric ceramic powders are suggested.