Effects of sintering parameters on the microstructure and tensile properties of in situ TiBw/Ti6Al4V composites with a novel network architecture

In order to better understand the relationship of processing–structure–mechanical properties of in situ TiB whisker reinforced Ti6Al4V (TiBw/Ti64) composites with a novel network architecture, the effects of sintering parameters on the microstructure and tensile properties of the composites were investigated. TiB whiskers with the highest aspect ratio and the coarsest whiskers were obtained at 1100 °C and 1200 °C due to the skips of whisker growth speeds along the [0 1 0] direction and the [0 0 1] and [1 0 0] directions, respectively. Additionally, TiB whisker with a claw-like structure can be synthesized from one TiB₂ polycrystal parent. The quasi-continuous network architecture of TiBw/Ti64 composites can be achieved at higher sintering temperatures more than 1200 °C. The prepared composites with the quasi-continuous network architecture exhibit a superior combination of tensile properties.     

Effect of β heat treatment temperature on microstructure and mechanical properties of in situ titanium matrix composites

TiB and La₂O₃ reinforced titanium matrix composites were in situ prepared by casting and hot working. An effort was made to investigate relationship between β heat treatment temperature, microstructure and mechanical properties. Tensile tests were performed at room temperature, 600, 650 and 700 °C, respectively. Results indicated that composites treated at 10 °C above β transus points obtained fine grain microstructures and superior mechanical properties. When composites were treated at 20 °C above β transus points, the larger α colonies sizes led extremely decreased strength and the effect of reinforcements’ volume fraction on matrix of composites was reduced; dominant failure modes at high temperatures also differed from the fine microstructure.     

Selective-syntheses, characterizations and photocatalytic activities of nanocrystalline ZnTa2O6 photocatalysts

Nanocrystalline ZnTa₂O₆ photocatalysts with different crystal structures were prepared via a simple and facile sol-gel method in a temperature range of 650-950 °C. The absorption edges and particle sizes of the samples were located at about 285 nm (corresponding a band gap of 4.35 eV) and ranged from 25 to 150 nm, respectively. The photocatalytic activities of the samples were tested by the degradation of methyl orange under UV light irradiation. The results indicated that the crystal structure of ZnTa₂O₆ was a main factor for the different photocatalytic activities of the ZnTa₂O₆ samples. Moreover, the effects of crystallinities and surface areas of the obtained samples on the catalytic activities were also discussed.     

Preparation of (ZnO)1−x(GaN)x:Mn powder and its photoluminescence properties

(ZnO)_1−x(GaN)_x:Mn²⁺ powder was prepared by a conventional solid-state reaction under an NH₃ gas flow. The sample preparation conditions including the mixing ratio of the raw materials, the annealing temperature, and the annealing time were varied. The crystallinity and the photoluminescence (PL) intensity of this fluorescent material were improved by increasing the amount of ZnO and by increasing the annealing time, and no changes was observed in the PL wavelength. The crystallinity of the samples was enhanced and the PL intensity increased markedly at annealing temperatures of 700 °C and 800 °C, respectively. Moreover, it was clarified that the sample could be synthesized at annealing temperatures of above about 650 °C.     

Fabrication Conditions, Microstructures and Mechanical Properties of P/M Processed 2XXX Al-SiCW Composites

The powder metallurgy fabrication of 2XXX Al composites reinforced with SiC whiskers was studied by investigating the evolution of microstructure and its relation to the mechanical properties. In this study, SiC whiskers and gas-atomized aluminum powders were mixed by fluid zone mixer, consolidated by vacuum hot press, and then extruded. The optimum condition for consolidation was 620°C and 50 MPa, at which fully densified pore-free billets were obtained. The composites with relatively homogeneous microstructures were produced by extrusion at 450–500°C under the extrusion pressure of 700–1000 MPa. The mechanical properties of the extruded bars were found to be comparable with those of the composites processed by Advanced Composite Materials Corp. The optimum fabrication conditions have been proposed for producing composites of improved mechanical properties through elimination of coarse intermetallic particles, uniform distribution of reinforcements, and minimization of whisker breakage. The possibility of using particulates rather than whiskers, and the modification of the alloy matrices for high temperature applications are also discussed in relation to the distribution of reinforcements and the optimization of the consolidation temperature.     

Elastic modulus and hardness of CaTiO3, CaCu3Ti4O12 and CaTiO3/CaCu3Ti4O12 mixture

Three ceramic systems, CaTiO₃ (CTO), CaCu₃Ti₄O₁₂ (CCTO) and intermediate nonstoichiometric CaTiO₃/CaCu₃Ti₄O₁₂ mixtures (CTO.CCTO), were investigated and characterized. The ceramics were sintered at 1100 °C for 180 min. The surface morphology and structures were investigated by XRD and SEM. Elastic modulus and hardness of the surfaces were studied by instrumented indentation. It was observed that CCTO presented the higher mechanical properties (E = 256 GPa, hardness = 10.6 GPa), while CTO/CCTO mixture showed intermediate properties between CTO and CCTO.     

BaTiO3-SrTiO3 layered dielectrics for energy storage

BaTiO₃-SrTiO₃ (BST) thick films (~ 250-390 μm) with layered structures were fabricated by tape-casting and lamination process. Layered composites with various Ba/Sr ratios were obtained by lamination of BaTiO₃ (BT) and SrTiO₃ (ST) tapes in different spatial configurations (2-2). As-prepared BST ceramics showed much improved sinterability over the laminates of pure BT or pure ST tapes. Dielectric properties of materials were measured in the temperature range of 25 °C to 200 °C. The method of utilizing of layered structures offered flexibility to maximize the energy storage capability at specific operating conditions: (temperature and electric field) by tailoring the dielectric properties through varying the spatial configurations of BT and ST films.     

Effect of LaNiO3 electrodes and lead oxide excess on chemical solution deposition derived Pb(Zrx,Ti1 − x)O3 films

The effects of LaNiO₃ (LNO) and Pt electrodes on the properties of Pb(Zr_x,Ti_1 − x)O₃ (PZT) films were compared. Both LNO and PZT were prepared by chemical solution deposition (CSD) methods. Specifically, the microstructure of LNO and its influence on the PZT properties were studied as a function of PbO excess. Conditions to minimize the Pyrochlore phase and porosity were found. Remnant polarization, coercive field and fatigue limit were improved in the PZT/LNO films relative to the PZT/Pt films. Additionally, the PZT crystallization temperature over LNO was 500 °C, about ~ 50 °C lower than over Pt. The crystallization temperature reported here is amongst the lowest values for CSD-based PZT films.     

The properties of transparent semiconductor Zn1 − xTixO thin films prepared by the sol-gel method

Transparent semiconductor thin films of Zn_1 − xTi_xO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn_1 − xTi_xO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn_0.88Ti_0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.     

Structure and thermal conductivity of Gd2(TixZr1 − x)2O7 ceramics

The Gd₂(Ti_xZr_1 − x)₂O₇ (x = 0, 0.25, 0.50, 0.75, 1.00) ceramics were synthesized by solid state reaction at 1650 °C for 10 h in air. The relative density and structure of Gd₂(Ti_xZr_1 − x)₂O₇ were analyzed by the Archimedes method and X-ray diffraction. The thermal diffusivity of Gd₂(Ti_xZr_1 − x)₂O₇ from room temperature to 1400 °C was measured by a laser-flash method. The Gd₂Zr₂O₇ has a defect fluorite-type structure; however, Gd₂(Ti_xZr_1 − x)₂O₇ (0.25 ≤ x ≤ 1.00) compositions exhibit an ordered pyrochlore-type structure. Gd₂Zr₂O₇ and Gd₂Ti₂O₇ are infinitely soluable. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ increases with increasing Ti content under identical temperature conditions. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ first decreases gradually with the increase of temperature below 1000 °C and then increases slightly above 1000 °C. The thermal conductivity of Gd₂(Ti_xZr_1 − x)₂O₇ is within the range of 1.33 to 2.86 W m^− 1 K^− 1 from room temperature to 1400 °C.     

Structural and optical studies of nanocrystalline V2O5 thin films

We report the structural and optical properties of nanocrystalline thin films of vanadium oxide prepared via evaporation technique on amorphous glass substrates. The crystallinity of the films was studied using X-ray diffraction and surface morphology of the films was studied using scanning electron microscopy and atomic force microscopy. Deposition temperature was found to have a great impact on the optical and structural properties of these films. The films deposited at room temperature show homogeneous, uniform and smooth texture but were amorphous in nature. These films remain amorphous even after postannealing at 300 °C. On the other hand the films deposited at substrate temperature T_S > 200 °C were well textured and c-axis oriented with good crystalline properties. Moreover colour of the films changes from pale yellow to light brown to black corresponding to deposition at room temperature, 300 °C and 500 °C respectively. The investigation revealed that nanocrystalline V₂O₅ films with preferred 001 orientation and with crystalline size of 17.67 nm can be grown with a layered structure onto amorphous glass substrates at temperature as low as 300 °C. The photograph of V₂O₅ films deposited at room temperature taken by scanning electron microscopy shows regular dot like features of nm size.     

Ferroelectric and fatigue-free properties of Au/(Bi,La)4Ti3O12/ITO thin film capacitors by pulsed laser deposition

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by pulsed-laser-ablation method. Films deposited at 400 °C and annealed at 650 °C resulted in remnant polarization and coercive field values of 14-16 μC/cm² and 90-100 kV/cm, respectively. The fatigue measurements were conducted until 1 × 10¹¹ cycles but the individual switched and unswitched polarizations showed unequal magnitudes. Such an unequal switching polarization proves that an extrinsic effect mainly associated with the electrode exists in this thin film capacitor. The overall switching polarizations showed no polarization degradation, suggesting that BLT films are fatigue resistive even on hybrid-metal-oxide electrodes.     

Structural and magnetic properties of CoFe2O4 thin films deposited by laser ablation on Si (001) substrates

Cobalt ferrite (CoFe₂O₄) thin films have been deposited on Si (001) substrates, with different substrate temperatures (T_dep = 25 °C − 600 °C). The films were prepared by pulsed laser ablation with a KrF excimer laser (wavelength λ = 248 nm). The oxygen pressure during deposition was 2 × 10⁻² mbar. The films structure was studied by X-ray diffraction (XRD) and their surface was examined by scanning electron microscopy (SEM). The magnetic properties were measured with a vibrating sample magnetometer (VSM). For low deposition temperatures, the films presented a mixture of a CoFe₂O₄ phase, with the cubic spinel structure, and cobalt and iron antiferromagnet oxides with CoO and FeO stoichiometries. As the deposition temperature increased, the CoO and FeO relative content strongly decreased, so that for T_dep = 600 °C the films were composed mainly by polycrystalline CoFe₂O₄. The magnetic hysteresis cycles measured in the films were horizontally shifted due to an exchange coupling field (H_exch) originated by the presence of the antiferromagnetic phases. The exchange field decreased with increasing deposition temperature, and was accompanied by a corresponding increase of the coercivity and remanence ratio of the cycles. This behavior was due to the strong reduction of the CoO and FeO content, and to the corresponding dominance of the CoFe₂O₄ phase on the magnetic properties of the thin films.     

Annealing effect on crystallization behavior of cubic MgxZn1−xO films on A-plane and M-plane sapphire

Cubic Mg_xZn_1−xO thin films with Mg composition around 70% were deposited on A-plane and M-plane sapphire substrates by rf-reactive magnetron sputtering. Measured structural and optical properties of these thin films indicated an optimal annealing temperature of 700 °C which produced high quality cubic MgZnO thin films on both substrates. Moreover, when the annealing temperature exceeded 750 °C, a much rougher surface resulted, and several large mosaic particles on the surface of the annealed films appeared. From EDX results, the Mg composition was lower than that found in other sections of the annealed films. We attributed this to thermally induced reconstruction of the crystallites. This phenomenon was more obvious for annealed MgZnO films on A-plane sapphire than that on M-plane sapphire. Thermal expansion mismatch with the substrate is the principal reason.     

Lead-free piezoelectric thin films of Mn-doped NaNbO3-BaTiO3 fabricated by chemical solution deposition

Lead-free piezoelectric thin films of NaNbO₃-BaTiO₃ were fabricated on Pt/TiO_x/SiO₂/Si substrates by chemical solution deposition. Perovskite NaNbO₃-BaTiO₃ single-phase thin films with improved leakage-current and ferroelectric properties were prepared at 650 °C by doping with a small amount of Mn. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ thin films showed slim ferroelectric P-E hysteresis and field-induced strain loops at room temperature. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ films showed remanent polarization values of 6.3 and 6.2 μC/cm², and coercive field of 41 and 55 kV/cm, respectively. From the slope of the field-induced strain loop, the effective piezoelectric coefficient (d₃₃) was found to be 40-60 pm/V.     

In situ synthesis of TiB whisker reinforcements in the joints of Al2O3/TC4 during brazing

Al₂O₃ ceramic has been successfully joined to Ti-6Al-4V alloy with Ag-Cu-Ti-B mixed powder. The TiB whiskers in the brazing layer were in situ synthesized during brazing. The effects of B content in reactant on the phase composition, microstructure and shear strength of the joints were investigated using SEM, EDS, and shear test. Results indicate that B content in the filler has a great impact upon the microstructure of the joints via exerting an influence on the volume fraction of in situ synthesized TiB whiskers. When the TiB content is 40 vol.%, the shear strength reaches the maximum value of 77.9 MPa. The higher content of TiB (≥40 vol.%) depresses the shear strength of the joints due to the interfacial thermal stress cannot be relaxed. Reaction phases (Ti₃Cu₂AlO, Ti₂Cu, Ti₂(Cu, Al), Ti(Cu, Al) and Ti₃Al) appear in the joint, moreover, as the volume fraction of TiB increase, Ag (s.s) and Ti(Cu, Al) distribute more uniform and fine in the brazing layer, as well as TiB whiskers mainly distribute in them. Eventually, Ti₃Cu₂AlO, TiB and TiB₂ firstly generate based on the thermodynamic analysis, and in excessive Ti circumstances, TiB whiskers remain in the brazing alloy.     

Ferroelectric properties of Bi3.4Dy0.6Ti3O12 thin films crystallized in N2

Bi_3.4Dy_0.6Ti₃O₁₂ (BDT) ferroelectric thin films were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) and annealed in an N₂ environment after pre-annealing in air at 400 °C. The effect of crystallization temperature on the structural and electrical properties of the BDT films was studied. The BDT films annealed in N₂ in the temperature range of 600 °C to 750 °C were crystallized well and the average grain size increased with increasing crystallization temperature, while the remanent polarization of the films is not a monotonic function of the crystallization temperature. The BDT films crystallized at 650 °C have the largest remanent polarization value of 2P_r = 39.4 μC/cm², and a fatigue-free characteristic.     

Influence of annealing treatments for ZnO-doped Zr0.8Sn0.2TiO4 thin films by RF magnetron sputtering

Zirconium tin titanium oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fixed rf power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr and an Ar/O₂ ratio of 100/0 with various annealing temperatures and annealing times. Electrical properties and microstructures of 1 wt.% ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films prepared by rf magnetron sputtering on n-type Si(100) substrates at different annealing temperatures (500 °C-700 °C) and annealing times (2 h-6 h) have been investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were sensitive to the treatment conditions such as annealing temperature and annealing time. At an annealing temperature of 600 °C and an annealing time of 6 h, the ZnO-doped (Zr_0.8Sn_0.2)TiO₄ thin films possess a dielectric constant of 46 (at f = 10 MHz), a dissipation factor of 0.059 (at f = 10 MHz), and a low leakage current density of 3.8 × 10^− 9 A/cm² at an electrical field of 1 kV/cm.     

Controlling temperature coefficient of resistivity in La1−xSrxMnO3 ceramics

We propose La_1−xSr_xMnO₃ as a new lead-free and ruthenium-free conductive oxide used for thick film resistors. The temperature coefficient of resistivity (TCR) of the La_1−xSr_xMnO₃ was controlled systematically by changing the composition x. The TCR behavior depended on the change of the crystal symmetries and the average valence of Mn ions. The highest value of 9356 ppm/°C was obtained at the x = 0.35. Zero TCR was realized around 0.200 < x < 0.225 and 0.45 < x < 0.50, where the critical x values were related to the characteristic change from Mott-insulator to metallic behavior. The systematical controlling TCR and the zero TCR are the first to be demonstrated for conductive oxide.     

Hydrothermal synthesis and characterization of (Bi,K)TiO3 ferroelectrics

A lead-free ferroelectric (Bi,K)TiO₃ (BKT) was synthesized by a hydrothermal process and characterized systematically at various temperatures. Well-crystallized BKT in the tetragonal phase was identified at a hydrothermal temperature over 220 °C. Small cubic particles were observed, regardless of hydrothermal temperature. The BKT sintered at 1050 °C was observed to be a typical relaxor behavior and very stable against frequency and temperatures, respectively. The sintered-BKT ceramics exhibited a high temperature of maximum dielectric permittivity (T_max = 356 °C at 10⁶ Hz) with piezoelectric constant (d₃₃ = 65 pC/N) and electromechanical coupling factors (k_p = 0.22, k_t = 0.43). Thus, the sintered-BKT showed excellent temperature stability with a high-T_max and piezoelectric properties.