Accelerated hydrogen desorption from MgH<Subscript>2</Subscript> by high-energy ball-milling with Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

The effect of the addition of Al₂O₃ (50 wt%) on the dehydrogenation of MgH₂ was investigated. Composites of the oxide and the hydride were prepared in two ways: by milling the components separately or by co-milling them together in a gear-driven planetary ball mill for 10 min. The co-milled composite (MgH₂–Al₂O₃) released approximately 90% of the maximum hydrogen storage capacity within 30 min under a pressure of 0.003 MPa at 250 °C. In contrast, the composite of the separately milled components did not release hydrogen even after 2 h under the same conditions. BET measurement with nitrogen gas showed a negligible difference in the specific surface areas between the co-milled and separately milled composites. However, the saturation amount of hydrogen gas for the co-milled composite was 30% larger than that of the mixture of separately milled hydride and oxide. The activation energy for hydrogen desorption from the co-milled composite, calculated on the basis of the surface-controlled model was 80 kJ mol⁻¹, a value that is 50 kJ mol⁻¹ lower than that of mixture of the separately milled MgH₂ and Al₂O₃.     

Fabrication of carbon nanofiber(CNF)-dispersed Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composites by pulsed electric-current pressure sintering and their mechanical and electrical properties

Dense Al₂O₃-based composites (≥99.0% of theoretical) dispersed with carbon nanofibers (CNFs) were fabricated using the pulsed electric-current pressure sintering (PECPS) for 5 min at 1300°C and 30 MPa in a vacuum. The dispersion of CNFs into the matrix depended much on the particle size of the starting Al₂O₃ powders. Mechanical properties of the composites were evaluated in relation with their microstructures; high values of three-point bending strength σ_b (∼800 MPa) and fracture toughness K _IC (∼5 MPa·m^1/2) were attained at the composition of CNF/Al₂O₃ = 5:95 vol%, which σ_b and K _IC values were ∼25% and ∼5%, respectively, higher than those of monolithic Al₂O₃. This might be due to the small Al₂O₃ grains (1.6 μm) of dense sintered compacts compared with that (4.4 μm) for the pure Al₂O₃ ceramics, resulting from the suppression of grain growth during sintering induced by uniformly dispersed CNFs in the matrix. Electrical resistivity of CNF/Al₂O₃ composites decreased rapidly from >10¹⁵ to ∼2.1 × 10⁻² Ωm (5vol%CNF addition), suggesting the machinability of Al₂O₃-based composites by electrical discharge machining.

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Effect of Y<Subscript>2</Subscript>O<Subscript>3</Subscript> on the crystallization behavior of SiO<Subscript>2</Subscript>–MgO–B<Subscript>2</Subscript>O<Subscript>3</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

A series of glass comprising of SiO₂–MgO–B₂O₃–Y₂O₃–Al₂O₃ in different mole ratio has been synthesized. The crystallization kinetics of these glasses was investigated using various characterization techniques such as differential thermal analysis (DTA), thermo gravimetric analysis (TGA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). Crystallization behavior of these glasses was markedly influenced by the addition of Y₂O₃ instead of Al₂O₃. Addition of Y₂O₃ increases the transition temperature, T _g, crystallization temperature, T _c and stability of the glasses. Also, it suppresses the formation of cordierite phase, which is very prominent and detrimental in MgO-based glasses. The results are discussed on the basis of the structural and chemical role of Y³⁺ and Al³⁺ ions in the present glasses.     

Fabrication of Cr<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composite nanofibers by electrospinning

PVA(Polyvinyl alcohol)/chromium nitrate/aluminum nitrate composite nanofibers were prepared by using sol–gel processing and electrospinning technique. By high temperature calcinating the above precursor fibers, Cr₂O₃/Al₂O₃ composite nanofibers were successfully obtained. The fibers were characterized by XRD, IR, and SEM, respectively. The results showed that the crystalline phase and the morphology of the fibers depended on the calcination temperatures.     

Thermoelectric properties of WO<Subscript>3</Subscript>-based ceramics doped with Co<Subscript>2</Subscript>O<Subscript>3</Subscript>

Tungsten trioxide (WO₃) doped with cobalt sesquioxide (Co₂O₃) was prepared by a conventional mixed oxide processing route and the thermoelectric properties were studied from 300 up to 1,000 K. The addition of Co₂O₃ to WO₃ resulted in an increase in both the grain size and porosity, indicating that Co₂O₃ promotes the grain grown of WO₃. The magnitude of the electrical conductivity (σ) and the absolute value of the Seebeck coefficient (|S|) depended strongly on the Co₂O₃ content. As for the power factor (σS ² ), the 5.0 mol% sample has the maximum value of the power factor which is 0.12 μWm⁻¹K⁻² at 873 K.     

Effect of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> on the properties of nanocrystalline ZrO<Subscript>2</Subscript> + 3 mol % Y<Subscript>2</Subscript>O<Subscript>3</Subscript> powder

We have studied the properties of nanocrystalline ZrO₂〈3 mol % Y₂O₃〉 and 90 wt % ZrO₂〈3 mol % Y₂O₃〉-10 wt % Al₂O₃ powders prepared via hydrothermal treatment of coprecipitated hydroxides at 210°C. The results demonstrate that Al₂O₃ doping raises the phase transition temperatures of the metastable low-temperature ZrO₂ polymorphs and that the structural transformations of the ZrO₂ and Al₂O₃ in the doped material inhibit each other.     

Memory characteristics of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/LaAlO<Subscript>3</Subscript>/SiO<Subscript>2</Subscript> multilayer structures with tunnel oxide thickness variation

Charge trap flash (CTF) memory devices are candidates to replace NAND flash devices. In this study, Pt/Al₂O₃/LaAlO₃/SiO₂/Si multilayer structures with lanthanum aluminate charge traps were fabricated for nonvolatile memory device applications. An aluminum oxide film was used as a blocking oxide for low power consumption in the program/erase operation and to minimize charge transport through the blocking oxide layer. The thickness of SiO₂ as tunnel oxide layer was varied from 30 to 50 Å. Thicknesses of oxide layers were confirmed by high resolution transmission electron microscopy (HRTEM) and all the samples showed amorphous structure. From the C–V measurement, a maximum memory window of 3.4 V was observed when tunnel oxide thickness was 40 Å. In the cycling test for reliability, the 30 Å tunnel oxide sample showed a relatively large memory window reduction by repeated program/erase operations due to the high electric field of ~10 MV/cm through tunnel oxide. The other samples showed less than 10% loss of memory window during 10⁴ cycles.     

Mechanical properties and microstructure of Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/mullite composite

An Al₂O₃/5 vol.% mullite composite was synthesized by using reaction sintering of Al₂O₃/0.78 wt.% SiC at 1,600 °C for 2 h in air. The phase analysis of the Al₂O₃/mullite composite was carried out using X-ray diffraction (XRD). There were two kinds of mullite in alumina/mullite composite, namely, 3Al₂O₃·2SiO₂ and Al_5.65Si_0.35O_9.175. The microstructure of the Al₂O₃/mullite composite was investigated using scanning electron microscope (SEM) and transmission electron microscope (TEM). The mechanical properties such as Young’s modulus, Poisson’s ratio, hardness, toughness and strength of the Al₂O₃/mullite composite were investigated. The influence of mullite on the composite is discussed.     

Luminescence properties and electronic structure of Sm<Superscript>3+</Superscript>-doped YAl<Subscript>3</Subscript>B<Subscript>4</Subscript>O<Subscript>12</Subscript>

The luminescence properties of Sm³⁺ ions in YAl₃B₄O₁₂ were studied upon synchrotron excitation in the 3.8–11 eV region. In addition to the 4f → 4f excitation bands, the excitation spectra of the Sm³⁺ emission contain broad bands at 6.1 and ~7.0 eV. These bands are attributed to charge transfer transition in Sm³⁺–O²⁻ complexes and 4f → 5d transition of Sm³⁺ ions, respectively. The optical absorption edge of YAl₃B₄O₁₂ was determined at 7.3 eV. A comparison with the results of electronic structure calculations on YAl₃B₄O₁₂ is also made.     

Hollow biomorphic Al<Subscript>2</Subscript>O<Subscript>3</Subscript> fibers produced from sisal

Al₂O₃ fibers with a hollow morphology were produced by Al-vapor infiltration-reaction and subsequent oxidation from pyrolysed fibers of natural sisal. Following pyrolysis, the bio-fiber template was reacted with gaseous Al at 1,400 °C–1,600 °C in vacuum to form Al₄C₃. After an oxidation/sintering process at 1,550 °C, the biomorphic Al₄C₃ fibers were fully converted into Al₂O₃, maintaining the microstructural features of the native sisal. Phase and microstructural characterization during processing were evaluated by high temperature X-ray diffractometry and scanning electron microscopy, respectively. Thermo-analyses were performed in the Al₄C₃ samples in order to estimate the reactions and the weight change during the oxidation step.     

Morphology and luminescent properties of Al<Superscript>3+</Superscript>/Mg<Superscript>2+</Superscript>-doped Y<Subscript>2</Subscript>O<Subscript>3</Subscript>:Eu<Superscript>3+</Superscript> phosphor

Al³⁺/Mg²⁺ doped Y₂O₃:Eu phosphor was synthesized by the glycine-nitrate solution combustion method. In contrast to Y₂O₃:Eu which showed an irregular shape of agglomerated particles (the mean particle size >10 μm), the morphology of Al³⁺/Mg²⁺ doped Y₂O₃:Eu crystals was quite regular. Al³⁺/Mg²⁺ substituting Y³⁺ in Y₂O₃:Eu resulted in an obvious decrease of the particle size. Meanwhile, higher the Al³⁺/Mg²⁺ concentration, smaller the particle size. In particular, the introduction of Al³⁺ ion into Y₂O₃ lattice induced a remarkable increase of PL and CL intensity. While, for Mg²⁺ doped Y₂O₃:Eu samples, their PL and CL intensities decreased. The reason that causes the variation of PL and CL properties for Al³⁺ and Mg²⁺ doped Y₂O₃:Eu crystals was concluded to be related to sites of Al³⁺ and Mg²⁺ ions inclined to take and the difference of ion charge.     

Effect of Dy<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on microstructure,electrical properties,and aging behavior of ZnO–V<Subscript>2</Subscript>O<Subscript>5</Subscript>–MnO<Subscript>2</Subscript>–CoO varistor ceramics

The microstructure, electrical properties, and aging behavior of ZnO–V₂O₅–MnO₂–CoO–Dy₂O₃ varistor ceramics were investigated for different contents of Dy₂O₃. The microstructure consisted of ZnO grain as a main phase and secondary phases such as Zn₃(VO₄)₂, ZnV₂O₄, and DyVO₄. The average grain size increased from 7.6 to 10.1 μm and the sintered density slightly increased from 5.53 to 5.57 g/cm³ with the increase of Dy₂O₃ content. The varistor ceramics added with 0.05 mol% Dy₂O₃ exhibited the most nonlinear properties, with nonlinear coefficient of 30, and the highest stability against DC-accelerated aging stress. The Dy₂O₃ acted as an acceptor due to the decrease of donor density in the range of 2.73 × 10¹⁸/cm³ to 1.28 × 10¹⁸/cm³.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Synthesis,structural, photoluminescence and mechanoluminescence properties of Tb<Superscript>3+</Superscript>: Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> novel green nanophosphors

Novel green nanophosphors Ca₂Gd₂W₃O₁₄: Tb³⁺ were synthesized by solid state reaction method. From the X-ray diffraction profiles it is observed that Tb³⁺: Ca₂Gd₂W₃O₁₄ phosphors were crystallized in the form of tetragonal structure. The scanning electron microscopy (SEM) image shows that the particle size is at around 300 nm. In addition to these the prepared powder phosphors were also examined by the energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL) and mechanoluminescence (ML) spectra. Emission spectra of Tb³⁺: Ca₂Gd₂W₃O₁₄ nanophosphors have shown bright green emission at 545 nm (⁵D₄ → ⁷F₅) with an excitation wavelength λ_exci = 374 nm (⁷F₆ → ⁵G₆). ML spectra shows the radiation effect on the Ca₂Gd₂W₃O₁₄: Tb³⁺ nanophosphors and from that it was observed that these phosphors are very less sensitive for lower exposure.     

Synthesis,photoluminescence and mechanoluminescence properties of Eu<Superscript>3+</Superscript> ions activated Ca<Subscript>2</Subscript>Gd<Subscript>2</Subscript>W<Subscript>3</Subscript>O<Subscript>14</Subscript> phosphors

A new series of Eu³⁺ ions-activated calcium gadolinium tungstate [Ca₂Gd₂W₃O₁₄] phosphors were synthesized by conventional solid-state reaction method. The X-ray diffraction patterns of the powder samples indicate that the Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors are of tetragonal structure. The prepared phosphors were well characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), Fourier transform infrared spectroscopy (FTIR), photoluminescence (PL), and mechanoluminescence (ML) spectra. PL spectra of Eu³⁺: Ca₂Gd₂W₃O₁₄ powder phosphors have shown strong red emission at 615 nm (⁵D₀ → ⁷F₂) with an excitation wavelength λ _exci = 392 nm (⁷F₀ → ⁵L₆). The energy transfer from tungstate groups to europium ions has also reported. Mechanoluminescence studies of Eu³⁺: Ca₂Gd₂W₃O₁₄ phosphors have also been explained systematically.     

Effect of nano-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> doping on formation and superconductivity of bulk MgB<Subscript>2</Subscript>

Bulk materials of MgB₂ have been prepared with the stoichiometry of MgB₂(Al₂O₃) _x (x = 0, 2, 5, 10 and 20% nano-Al₂O₃ powders), by using solid-state reaction route. All samples were sintered at 750 °C for 30 min in a calorimeter to monitor the sintering reaction process. It is found that the onset temperatures of reaction between Mg and B powders increase significantly with increasing the amount of Al₂O₃. However, the reaction time is shortened for the nano-Al₂O₃ powders can effectively activate the reaction as a catalyst. The critical transition temperature decreases from 38.5 to 31.6 K, and the corresponding temperature window becomes narrow (less than 2.6 K). Furthermore, the amount of MgO impurity was found to increase with the increase of Al₂O₃, which probably indicates that partial Mg was replaced by Al.     

Oxidation of tungsten in the W-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> system at temperatures from 2350 to 2500 K and pressures from 1 to 10<Superscript>5</Superscript> Pa

We examine chemical reactions that lead to the oxidation of tungsten in the W-Al₂O₃ system at T = 2350–2500 K and p = 1–10⁵ Pa. The results indicate that, for p ≥ 10 Pa, tungsten oxidizes through reactions with both Al₂O₃ vapor and dissociation products (Al₂O₂, Al₂O, AlO₂, and AlO). For p ≤ 10 Pa, oxidation is due to direct reaction of tungsten with O and/or O₂. For p ≤ 2 Pa, tungsten may react with molten Al₂O₃. A detailed analysis of tungsten oxidation processes is intended to optimize parameters of the melt growth of corundum crystals.     

Consolidation of ultrafine-grained Cu powder and nanostructured Cu–(2.5–10) vol%Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composite powders by powder compact forging

An as-received ultrafine-grained Cu powder and four nanostructured Cu–(2.5–10) vol%Al₂O₃ composite powders produced by high-energy mechanical milling of mixtures of the Cu powder and an Al₂O₃ nanopowder were consolidated using warm powder compaction followed by open die powder compact forging. The circular discs produced in the experiments achieved full densification. Tensile testing of the specimens cut from the forged discs showed that the Cu-forged disc had a fairly high yield strength of 330 MPa, UTS of 340 MPa and a plastic strain to fracture of 15%, but the Cu–Al₂O₃ composite-forged discs did not show any macroscopic plastic yielding. The fracture strength of the composite-forged discs decreased almost linearly with the increase of the volume fraction of Al₂O₃ nanoparticles. This study shows that a high level of consolidation of the ultrafine-grained Cu powder and the nanostructured Cu–2.5 vol%Al₂O₃ composite powder has been achieved by warm powder compacting at 350 °C and powder compact forging at 500 and 700 °C. However, this is not true for the nanostructured Cu–(5, 7.5 and 10) vol%Al₂O₃ composite powders, possibly due to their higher powder particle hardness at elevated temperatures in the range of 350–800 °C.     

The ferroelectric properties and residual stress analysis of Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films with a LaNiO<Subscript>3</Subscript> buffer layer

Bi_3.15Nd_0.85Ti₃O₁₂ (BNT) thin film with a thin LaNiO₃ film as buffer layer was fabricated by sol–gel method on Pt/TiO₂/SiO₂/Si substrate. The BNT thin films have a perovskite phase with a dense microstructure. The P _r and V _c value are 25.5 μc/cm² and 3.7 V, respectively under the applied voltage of 15 V. After the switching of 2 × 10⁹ cycles, the P _r value decreases to 86% of its pre-fatigue value. The leakage current density of the BNT thin films with LaNiO₃ buffer layer were generally in the order of 10⁻⁸ to 10⁻⁶ A/cm². The fatigue and leakage current properties were improved dramatically compared with the BNT film without a LaNiO₃ buffer layer that we prepared before. The measured residual stress was tensile stress and its value was 176 MPa.     

Microwave dielectric properties and its compatibility with silver electrode of LiNb<Subscript>0.6</Subscript>Ti<Subscript>0.5</Subscript>O<Subscript>3</Subscript> with B<Subscript>2</Subscript>O<Subscript>3</Subscript> and CuO additions

The influences of B₂O₃ and CuO (BCu, B₂O₃: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb_0.6Ti_0.5O₃ (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave dielectric properties. Typically, the excellent microwave dielectric properties of ε_r = 66, Q × f = 6,210 GHz, and τ _f  = 25 ppm/^oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired samples has also been investigated.