硅砂整形工艺及设备研究

通过对硅砂整形的试验研究,确定了采用特种磨削材料、利用小角度冲击磨削对硅砂进行整形的方法,探讨了砂粒在双回转体冲击磨削整形实验设备中的运动情况和整形机理。通过实验,提出了设备最佳整形工艺参数,并在实验设备上对几种硅砂进行了整形实验。     

带窄凸缘圆筒形零件的整形

通过对药盒整形工艺进行了分析,介绍了工艺计算方法、模具结构及工作过程,同时,对模具主要工作部分零件的设计做了介绍,给出了生产中注意的问题。     

整形、冲侧壁孔模设计

介绍一种在一次行程中完成整形及冲3个侧壁孔的冲裁模设计。在实际应用中效果良好。     

整形包装机数字控制系统的设计

以C8051F020为控制芯片,设计了整形包装机控制系统,实现了对整形包装机的有效控制,可应用于整形物体的流水生产线,对整形物体进行全自动包装。该系统能实现对5路温度的稳定控制,对下膜电机、主电机、送料电机的协调控制,具有很强的实用价值。     

套管滚压整形力学分析及单次整形极限研究

滚珠整形器在变形套管修复中应用越来越广泛,而整形时常凭经验确定整形量,若单次整形量过大极易造成套管损坏。为此,给出套管单次整形极限研究方法,采用多线性等向强化模型,考虑套管的材料和接触双重非线性特性,建立了滚压整形缩径变形套管有限元模型,给出了求解策略,并采用试验研究的方法验证了数值模型的合理性。揭示了不同整形量对套管塑性位移及应力分布的影响规律,研究了不同轴向变形长度套管单次整形极限。结果表明:随着套管整形量的增大,套管最大等效应力、塑性位移和残余应力均增大;随着套管轴向变形长度的增大,单次整形极限有减小的趋势,单次整形量最大值不能超过3.6 mm。研究结果可为滚压整形变形套管现场施工提供理论指导。     

立方氮化硼磨具修整技术研究

本文论述了ＣＢＮ磨具修整机理，建立了修整过程中整形和修锐的数学模型及公式并从理论上分析了各种形方法和修锐方法，并给出了优选工具及方法。     

Stainless and acid-resisting steels and alloys

Conclusions Highly alloyed steels and alloys are produced in conformity with GOST or technical specifications in thick and thin sheets, beams and channels, bars, hot-rolled and cold-rolled pipe, and rod. Castings are produced in the specialized plant of the Ministry of Chemical and Petroleum Machine Building.The technology of welding stainless steels and alloys is given in [15] and [16].TsNIIChERMET. Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 10, pp. 43–50, October, 1967.     

模具渗硼工艺及其发展应用

渗硼是提高模具使用寿命的重要途径，是在金属表面形成高硬度的金属硼化层，显著提高其耐磨性，且具有良好的耐热性和耐蚀性。近年来，随着渗硼工艺逐步改进和完善，已发展了复合渗、多元共渗及低温渗硼工艺，取得了良好的经济效果。     

Nanochemistry and supramolecular chemistry of actinides and lanthanides: Problems and prospects

The possibility of using unique properties of lanthanides in the nanotechnology is demonstrated. The origination of linear and nonlinear optical properties of lanthanide compounds with phthalocyanines, porphyrins, naphthalocyanines, and their analogs in solutions and condensed state and the prospects of obtaining novel materials on their basis are discussed. Based on the electronic structure and properties of lanthanides and their compounds, namely, optical and magnetic characteristics, electronic and ionic conductivity, and fluctuating valence, molecular engines are classified. High-speed storage engines or memory storage engines; photoconversion molecular engines based on Ln(II) and Ln(III); electrochemical molecular engines involving silicate and phosphate glasses; molecular engines whose operation is based on insulatorsemiconductor, semiconductor-metal, and metal-superconductor types of conductivity phase transitions; solid electrolyte molecular engines; and miniaturized molecular engines for medical analysis are distinguished. It is shown that thermodynamically stable nanoparticles of Ln _x M _y composition can be formed by d elements of the second halves of the series, i.e., those arranged after M = Mn, Tc, and Re. Prospects of using lanthanide superconductors in nanotechnology are considered.     

ADI和CADI在冶金矿山等行业中的应用及前景

综述了ADI和CADI的耐磨性能及耐磨原理;详细介绍了ADI磨球、衬板和锤头的应用情况,认为ADI件无论在综合力学性能,还是在耐磨性、使用寿命、成本方面都优于高铬铸铁件;同时还介绍了CADI在农业机械领域的应用效果.根据我国钢铁行业的发展趋势,指出ADI和CADI耐磨件市场前景广阔.     

金刚石、CBN有序排列及择优取向工具的研发及应用

有序排列／择优取向超硬材料工具的技术创新，将广泛适用于电镀、树脂、陶瓷、金属结合剂制品工具中，使用超硬材料颗粒在结合剂中均匀排列并择优定向，以最大潜能的发挥超硬材料各个方面固有的特性。并针对不同的加工对象，有选择性的使用超硬材料各自不同的特性，从而使超硬材料工具将以经济、高质与高效的优势替代传统的超硬材料工具并将进入新兴的加工领域，为生产企业带来新的发展机遇。本文将对有序排列与择优取向技术的研究现状及其在不同的金刚石工具中的应用做一阐述。     

Hardness and elastic modulus of amorphous and nanocrystalline SiC and Si films

Hydrogen-free amorphous and nanocrystalline films were prepared by magnetron sputtering of the SiC or Si targets. Mechanical properties (hardness, elastic modulus, intrinsic stress) and film structures were investigated in dependence on the substrate bias and temperature. It was found that both hardness and elastic modulus of all amorphous a-SiC films prepared at different substrate temperatures and biases are always lower than those for bulk α-SiC single crystal while the hardness of partially crystalline SiC films is higher and the elastic modulus lower than those for α-SiC one. In contrast, both hardness and elastic modulus of all amorphous Si films are always lower than those for nanocrystalline Si films which show approximately the same value as the Si single crystal.