散射式太赫兹扫描近场光学显微技术研究

基于散射式近场探测原理,设计并搭建了散射式太赫兹扫描近场光学显微系统(THz s-SNOM),实现了纳米量级空间分辨率的太赫兹近场显微成像测量.该系统以输出频率范围为0.1～0.3 THz的太赫兹倍频模块为发射源,通过纳米探针的针尖产生纳米光源与样品相互作用,并将样品表面的倏逝波转化为可在远场测量的辐射波.通过探针逐点...     

太赫兹近场光学亚表面检测技术研究

研究了太赫兹散射式扫描近场光学显微镜（Terahertz scattering-type scanning near-field optical microscopy,THz s-SNOM）对亚表面金属微纳结构的显微成像检测。首次采用自主搭建的THz s-SNOM系统对表面覆盖了六方氮化硼薄膜的金微米线进行太赫兹近场显微测量,获得了具有纳米量级空间分辨率和较高对比度的近场显微图。结合全波数值模拟,分析了THz s-SNOM探测亚表面金属微纳结构的空间分辨率、近场散射信号强度和成像对比度。研究表明,THz s-SNOM具有优良的亚表面显微成像检测能力,可应用于微纳电子器件的亚表面结构表征和缺陷检测。     

太赫兹近场扫描显微成像的理论模拟研究

太赫兹近场扫描成像系统突破了传统远场光学系统衍射极限的限制,可以实现太赫兹波段的超分辨检测与成像.基于太赫兹散射型扫描近场显微镜的工作原理,建立了一种基于COMSOL仿真软件的太赫兹散射型扫描近场显微镜系统的数值仿真模型,并通过该模型研究了探针由入射光激发而产生的避雷针效应和天线谐振效应,以及探针与样品之间的偶极效应.在此基础上,参照实际的扫描过程,实现了对蛋白分子的近场信号计算以及近场扫描成像.结果表明,该模型可以实现对三维立体物质的近场成像,在研究复杂的三维微纳米材料上具有应用潜力.     

太赫兹光致力近场显微成像技术及应用研究

设计并搭建了太赫兹光致力显微成像系统(THz PiFM),首次在太赫兹波段实现了近场光力纳米显微成像测量。该系统基于原子力显微镜,利用探针对所受力的灵敏检测能力,通过探测探针与样品之间近场偶极相互作用产生的光场梯度力,实现无探测器的太赫兹近场显微成像。利用该系统,对可见光激发下的单层MoS₂晶粒进行了近场纳米显微成像表征,并分析了晶粒边缘近场光力信号增强的机制。研究结果表明,THz PiFM对二维材料中的载流子具有高灵敏的探测能力。与传统的太赫兹近场显微成像技术相比,THz PiFM无需太赫兹探测器,而且可获得更加优越的空间分辨率和成像信噪比,是一种低成本、高性能的新型太赫兹近场显微成像技术。     

单层MoS2和WS2的太赫兹近场显微成像研究

采用太赫兹散射式扫描近场光学显微镜(THz s-SNOM)研究了化学气相沉积法制备的单层MoS₂和WS₂晶粒的太赫兹近场响应。在没有可见光激发时,未探测到可分辨的太赫兹近场响应,说明晶粒具有较低的掺杂载流子浓度。有可见光激发时,由于光生载流子的太赫兹近场响应,能够测得与晶粒轮廓完全吻合的太赫兹近场显微图。在相同的光激发条件下,MoS₂的太赫兹近场响应强于WS₂,反映了两者之间载流子浓度或迁移率的差异。研究结果表明,THz s-SNOM兼具超高的空间分辨率和对光生载流子的灵敏探测能力,对二维半导体材料和器件光电特性的微观机理研究具有独特的优势。     

扫描近场光学显微镜

本文简介近场光学的基本原理一非辐射场的探测与高分辨率的关系；近场光学显微镜的仪器发展。同时简要介绍近场光学显微镜在超高分辨率光学成象，纳米尺度光学微加工与光刻，高密度磁光存储，近场光谱等领域中的应用。     

近场扫描光学显微镜和光子扫描隧道显微镜

近场扫描光学显微镜和光子扫描隧道显微镜＊王佳（清华大学精密仪器系北京１０００８４）０引言自从８０年代初扫描隧道显微镜ＳＴＭ发明以来，扫描探针显微术ＳＰＭ已经发展成具有十几种类型的系列技术。其中引人注目的是以近场扫描光学显微镜ＮＳＯＭ和光子扫描隧道显微...     

模块化的保偏近场扫描光学显微镜结构设计

采用模块化的设计思想，制成了高质量且简单易用的音又光纤探针模块、模块化的扫描探头、扫描台等，从而研制出高性能，易操作的模块化的保偏近场扫描光学显微镜。     

基于半导体的可调谐太赫兹滤波器研究

太赫兹滤波器在通信、传感、成像等领域有着广泛的应用。提出了一个基于半导体材料砷化镓的周期性微结构可调谐太赫兹滤波器,并对半导体材料的电介质特性以及微结构的太赫兹滤波特性进行模拟研究。提出了基于光栅结构的太赫兹滤波器,用CST软件时域有限差分法(FDTD)进行模拟仿真,0.1~5.0THz频段的太赫兹波垂直入射光栅表面,在225~325K范围内可获得工作频率为0.35~1.51 THz,1.16 THz的滤波带宽,同时保持透过率在85%以上,这对太赫兹滤波器的滤波带宽和透过率的提升具有重大意义。     

Tapping-mode tuning-fork near-field scanning optical microscopy of low power semiconductor lasers

The newly developed inverted tapping-mode tuning-fork near-field scanning optical microscopy (TMTF-NSOM) is used to study the local near-field optical properties of strained AlGaInP/Ga_0.4In_0.6P low power visible multiquantum-well laser diodes. In contrast to shear-force mode NSOM, TMTF-NSOM provides the function to acquire the evanescent wave intensity ratio | I (2ω)|/| I (ω)| image, from which the evanescent wave decay coefficient q can be evaluated for a known tapping amplitude. Moreover, we probe the near-field stimulated emission spectrum, which gives the free-space laser light wavelength λ_o and the index of refraction n _r of the laser diode resonant cavity. Once q , λ_o, and n _r are all measured, we can determine the angle of incidence θ_o of the dominant totally internally reflected waves incident on the front mirror facet of the resonator. Determination of such an angle is very important in modelling the stability of the laser diode resonator.     

Coaxial probes for scanning near-field microscopy

This paper deals with the development of coaxial aperture tips integrated in a cantilever probe for combined scanning near-field infrared microscopy and scanning force microscopy. A fabrication process is introduced that allows the batch fabrication of hollow metal aperture tips integrated on a silicon cantilever. To achieve the coaxial tip arrangement a metal rod is deposited inside the hollow tip using the focused ion beam technique. Theoretical calculations with a finite integration code were performed to study the transmission characteristics of coaxial tips in comparison with conventional aperture probes. In addition, the influence of the geometrical design parameters of the coaxial probe on its optical behaviour is investigated.     

High-Resolution Lithography with Near-Field Optical Microscopy

Scanning near-field optical microscopy (SNOM) is used for lithography to avoid the resolution limiting diffraction of conventional optical methods. We have expanded a commercial SNOM for writing even complex structures on the nanometer scale. Scanning near-field optical lithography (SNOL) has been applied to conventional resists to explore its potential and the possible combination with conventional optical lithography (mix and match technique).     

Femtosecond near-field scanning optical microscopy study of molecular thin films

A near-field scanning optical microscope has been combined with a two-colour time-resolved pump-probe measurement system. It has a noise-equivalent transmittance change of 5.0 × 10⁻⁵ for a probe pulse with an intensity of 30 nW. The system has been used for evaluating molecular thin films that have a domain structure, particularly for observing a gate action of the single domains. The results include key features to understand an origin of the domains and suggest that the film composition is uniform over a distance of several micrometres.     

Optical microcantilever consisting of channel waveguide for scanning near-field optical microscopy controlled by atomic force

We develop a novel optical microcantilever for scanning near-field optical microscopy controlled by atomic force mode (SNOM/AFM). The optical microcantilever has the bent channel waveguide, the corner of which acts as aperture with a large tip angle. The resonance frequency of the optical microcantilever is 9 kHz, and the spring constant is estimated to be 0.59 N/m. The optical microcantilever can be operated in contact mode of SNOM/AFM and we obtain the optical resolution of about 200 nm, which is as same size as the diameter of aperture. We confirm that the throughput of optical microcantilever with an aperture of 170 nm diameter would be improved to be more than 10⁻⁵.