Structural and electrical properties of swift heavy ion beam irradiated Fe/Si interface

The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a n-Si (111) substrate at 10⁻⁶ torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au⁺⁹ ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 10¹² and 5 × 10¹³ ions/cm². Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. I-V measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0·73–0·54 eV. The series resistance varied from 102·04–38·61 kΩ.     

Mixing induced by swift heavy ion irradiation at Fe/Si interface

The present work deals with the mixing of metal and silicon by swift heavy ions in high-energy range. Threshold value for the defect creation in metal Fe calculated was found to be ∼ 40 keV/nm. A thin film of Fe (10 nm) was deposited on Si (100) at a pressure of 4 × 10⁻⁸ Torr and was irradiated with 95 MeV Au ions. Irradiation was done at RT, to a dose of 10¹³ ions/cm² and 1 pna current. The electronic energy loss was found to be 29.23 keV/nm for 95 MeV Au ions in Fe using TRIM calculation. Compositional analysis of samples was done by Rutherford backscattering spectroscopy. Reflectivity studies were carried out on the pre-annealed and post-annealed samples to study irradiation effects. Grazing incidence X-ray diffraction was done to study the interface. It was observed that ion beam mixing reactions at RT lead to mixing as a result of high electronic excitations.     

Ion beam induced mixing at Co/Si interface

Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au⁺⁹ ion irradiation at different fluences, varying from 10¹² to 10¹⁴ ions/cm². Mixing was investigated by Rutherford Backscattering Spectroscopy (RBS) as a function of ion fluence and its mechanism across the interface is explained by the thermal spike model.     

Photoelectron spectroscopy study of Mn/n-Si interfacial structure

The Mn/n-Si interfacial structure is susceptible to intermixing even at room temperature. To investigate the chemistry as a result of the intermixing, valence band and core level photoelectron spectroscopy of Mn/Si has been carried out using synchrotron radiation of 134 eV energy and Al K_α X-ray (λ = 1,486.6 Å) source. The fabricated structures have also been irradiated from swift heavy ions (Fe⁷⁺ of ~100 MeV) to investigate the ion beam mixing in such structures. Valence band photoelectron spectroscopy with 134 eV photons shows the evolution of Mn3d, Mn3p and Si2p levels with a shifting towards lower binding energy side compared to their elemental values of the binding energy. This binding energy shift shows the formation of chemical compound of Si and Mn. Evolution of Si2p core level prior to and after the swift heavy ion irradiation shows strong chemical reactivity of manganese thin film with silicon. Deconvolution of Mn3d valence band has shown the formation of silicide phase due to the hybridization of Mn3d and Si3sp states. Mn2p core level study shows that the oxide and silicide formation takes place during the growth and for successive etching, oxide part is decreasing whereas silicide part is increasing.     

Synthesis of zirconium silicide in Zr thin film on Si and study of its surface morphology

Zirconium silicide was synthesized on Si (100)/zirconium interface by means of swiftly moving 150 MeV Au ion beam. Thin films of zirconium (~60 nm) were deposited on Si (100) substrates in ultra high vacuum conditions using the electron-beam evaporation technique. The system was exposed to different ion fluencies ranging from 3 × 10¹³ to 1 × 10¹⁴ ions/cm² at room temperature. Synthesized zirconium silicide thin film reasonably affects the resistivity of the irradiated system and for highest fluence of 1 × 10¹⁴ ions/cm² resistivity value reduces from 84.3 to 36 μΩ cm. A low resistivity silicide phase, C-49 ZrSi₂ was confirmed by X-ray analysis. Schottky barrier height was calculated from I–V measurements and the values drops down to 0.58 eV after irradiation at 1 × 10¹⁴ ions/cm². The surface and interface morphologies of zirconium silicide were examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM shows a considerable change in the surface structure and SEM shows the ZrSi₂ agglomeration and formation of Si-rich silicide islands.     

Effect of annealing on magnetic properties and silicide formation at Co/Si interface

The interaction of Co (30 nm) thin films on Si (100) substrate in UHV using solid state mixing technique has been studied. Cobalt was deposited on silicon substrate using electron beam evaporation at a vacuum of 4×10^?8 Torr having a deposition rate of about 0·1 Å/s. Reactivity at Co/Si interface is important for the understanding of silicide formation in thin film system. In the present paper, cobalt silicide films were characterized by atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) in terms of the surface and interface morphologies and depth profile, respectively. The roughness of the samples was found to increase up to temperature, 300°C and then decreased with further rise in temperature, which was due to the formation of crystalline CoSi₂ phase. The effect of mixing on magnetic properties such as coercivity, remanence etc at interface has been studied using magneto optic Kerr effect (MOKE) techniques at different temperatures. The value of coercivity of pristine sample and 300°C annealed sample was found to be 66 Oe and 40 Oe, respectively, while at high temperature i.e. 748°C, the hysteresis disappears which indicates the formation of CoSi₂ compound.     

Preparation and characterization of ultra-thin cobalt silicide for VLSI applications

Ultra-thin cobalt silicide (CoSi₂) was formed from 10 nm cobalt film by solid phase reaction of Co and Si by use of rapid thermal annealing (RTA). The Ge⁺ ion implantation through Co film caused the interface mixing of the cobalt film with the silicon substrate and resulted in a homogeneous silicide layer. XRD was used to identify the silicide phases that were present in the film. The metallurgical analysis was performed by RBS. XRD and RBS investigations showed that final RTA temperature should not exceed 800°C for thin (< 50 nm) CoSi₂ formation.     

Analysis of microstress in neutron irradiated polyester fibre by X-ray diffraction technique

Microstresses developed in the crystallites of polymeric material due to irradiation of high-energy particle causes peak broadening and shifting of X-ray diffraction lines to lower angle. Neutron irradiation significantly changes the material properties by displacement of lattice atoms and the generation of helium and hydrogen by nuclear transmutation. Another important aspect of neutron irradiation is that the fast neutron can produce dense ionization at deep levels in the materials. The polyethylene terephthalate (PET) fibre of raw denier value, 78.2, were irradiated by fast neutron of energy, 4.44 MeV, at different fluences ranging from 1×10⁹ n/cm² to 1 × 10¹² n/cm². In the present work, the radiation heating microstresses developed in PET micro-crystallites was investigated applying X’Pert-MPD Philips Analytical X-ray diffractometer and the effects of microstresses in tensile strength of fibre measured by Instron have also been reported. The shift of 0.45 cm⁻¹ in the Raman peak position of 1614.65 cm{−1} to a higher value confirmed the development of microstresses due to neutron irradiation using micro-Raman technique. The defects due to irradiation were observed by SEM micrographs of single fibre for virgin and all irradiated samples.     

Evaluation of gamma and neutron irradiation effects on the properties of mica film capacitors

We present an investigation of gamma and neutron radiation effects on mica film capacitors from an electrical point of view. We have studied quantitatively the effects of gamma and neutron irradiation on mica film capacitors of thickness, 20 and 40 μm (0.7874 and 1.5748 mil) with two different areas, 01 and 04 cm². The capacitance has been measured at room temperature in the frequency range 100 Hz-10 MHz. Negligible change in the capacitance due to high gamma dose of⁶⁰Co, 15 kGy at dose rate 0.25 kGy/h, has been observed. However, appreciable change in the capacitance has been observed due to low doses of fast neutrons (cumulative dose, 115 cGy) with flux ∼ 9.925 x 10⁷ neutrons/cm² h from²⁵²Cf neutron source of fluence, 2.5 × 10⁷ neutrons/s. We have also observed that the impact of gamma and neutron irradiation is more at frequencies higher than 10 kHz. These results show that the mica capacitors do not show any radiation response below 10 kHz. The study shows the radiation response of mica film capacitors to gamma and fast neutron radiations. Mica capacitors show low gamma radiation response in comparison to fast neutron radiation, because a total dose of kGy order has been given by gamma source and only few cGy dose has been given by fast neutron source.     

Ion beam and thermally-induced interface reaction between highT c superconductor thin film and metal overlayer

Ion beam and thermally-induced interface reactions between highT _c superconducting thin film of Y₁Ba₂Cu₃O_7−x and metal overlayer of Ag are studied with a view to control the interfacial property of contact resistance. The interface reaction is induced by 100 keV Ar⁺ ion beam with different ion dose values ranging from 5 × 10¹³ to 3×10¹⁴ ions/cm². The YBaCuO film-metal interface is characterized by using the small angle XRD to study the structural properties of the interfacial phases. The electrical property of the interface, specifically contact resistance, has been investigated for different dose values and thermal treatments. Three-probe vs four-probe configuration has been adopted to measure the contact resistance.     

Modifications induced by silicon and nickel ion beams in the electrical conductivity of zinc nanowires

This paper presents the modification in electrical conductivity of Zn nanowires under swift heavy ions irradiation at different fluences. The polycrystalline Zn nanowires were synthesized within polymeric templates, using electrochemical deposition technique and were irradiated with 80 MeV Si⁷⁺ and 110 MeV Ni⁸⁺ ion beams with fluence varying from 1 × 10¹² to 3 × 10¹³ ions/cm². I–V characteristics of exposed nanowires revealed a decrease in electrical conductivity with increase in ion fluence which was found to be independent of applied potential difference. But in the case of high fluence of Ni ion beam (3 × 10¹³ ions/cm²), electrical conductivity was found to increase with potential difference. The analysis found a significant contribution from grain boundaries scattering of conduction electrons and defects produced by ion beam during irradiation on flow of charge carriers in nanowires.     

Mixing in Au/Ge system induced by Ar<Superscript>+</Superscript> ion irradiation

Rutherford Backscattering Spectrometry (RBS) and Electrical Resistivity Measurements (ERM) were used to investigate the mixing of Au/Ge bilayer deposited onto glass substrate induced by Ar ions. Mixing was initiated by bombarding the sample with 400 keV ⁴⁰Ar⁺ beam with a fluence up to 1.2 × 10¹⁷ ions/cm² at a constant flux of 0.25 μA/cm². To assist the evaluation of the experimental results, all spectra were simulated using “RUMP” computer code. RBS results indicated that ion beam mixing led to a formation of AuGe₂ compound. The mixed region was noticed to increase with the gradual increase of Ar⁺ fluence. Results were also compared with current theoretical models used to describe the mixing process. The Bφrgesen thermal spike model was found to accurately predict the diffusion in Au/Ge interface. An increase in the electrical resistivity of the film was detected during Ar⁺ irradiation.     

Swift heavy ion irradiation effect on Cu-doped CdS nanocrystals embedded in PMMA

Semiconductor nanocrystals (NCs) have received much interest for their optical and electronic properties. When these NCs dispersed in polymer matrix, brightness of the light emission is enhanced due to their quantum dot size. The CdCuS NCs have been synthesized by chemical route method and then dispersed in PMMA matrix. These nanocomposite polymer films were irradiated by swift heavy ion (SHI) (100 MeV, Si⁺⁷ ions beam) at different fluences of 1 × 10¹⁰ and 1 × 10¹² ions/cm² and then compared their structural and optical properties by XRD, atomic force microscopy, photoluminescence, and UV-Vis spectroscopy before and after irradiation. The XRD spectra showed a broad hump around 2θ ≈ 11·83° due to amorphous PMMA and other peaks corresponding to hexagonal structure of CdS nanocrystals in PMMA matrix. The photoluminescence spectra shows a broad peak at 530 nm corresponding to green emission due to Cu impurities in CdS. The UV-Vis measurement showed red shift in optical absorption and bandgap changed from 4·38–3·60 eV as the irradiation fluency increased with respect to pristine CdCuS nanocomposite polymer film.     

Effect of temperature and α-irradiation on gas permeability for polymeric membrane

In the present study the polyethersulphone (PES) membranes of thickness (35 ±2) μm were prepared by solution cast method. The permeability of these membranes was calculated by varying the temperature and by irradiation of α ions. For the variation of temperature, the gas permeation cell was dipped in a constant temperature water bath in the temperature range from 303–373 K, which is well below the glass transition temperature (498 K). The permeability of H₂ and CO₂ increased with increasing temperature. The PES membrane was exposed by a-source (₉₅Am₂₄₁) of strength (1 μ Ci) in vacuum of the order of 10⁻⁶ torr, with fluence 2.7 × 10⁷ ions/cm². The permeability of H₂ and CO₂ has been observed for irradiated membrane with increasing etching time. The permeability increases with increasing etching time for both gases. There was a sudden change in permeability for both the gases when observed at 18 min etching. At this stage the tracks are visible with optical instrument, which confirms that the pores are generated. Most of pores seen in the micrograph are circular cross-section ones.     

Enhancement in CO gas sensing properties of hydroxyapatite thick films: Effect of swift heavy ion irradiation

This paper investigates the effect of swift heavy ion (SHI) irradiation on surface morphology of Hydroxyapatite (HAp) thick films and modification in gas sensing characteristics. The HAp nanopowder is synthesized by wet chemical process and the thick films are prepared by screen printing technique. These films are irradiated with Ag⁷⁺ ions with energy of 100 MeV at different fluences ranging from 3 × 10¹⁰ to 3 × 10¹³ ions/cm². X-ray diffraction and atomic force microscopy tools are employed to examine the phase and surface modification in HAp thick films due to swift heavy ion irradiation. The ion irradiation study shows that crystallinity decreases and grain size changes with increase in ion fluence. A precise study on gas sensing is carried out to confirm operating temperature of HAp thick film sensor to detect CO gas. Saturation region of the film with increasing gas concentration and other parameters such as response and recovery time are also investigated from the point of view of using HAp films as a sensor device. SHI irradiated HAp thick film shows enhancement in the gas response and saturation limit for CO gas. Furthermore, the irradiated HAp film shows fast response and recovery time for CO gas. The study concludes that nanoceramic HAp thick film is an excellent CO gas sensor at an operating temperature of 195 °C.     

Synthesis and characterization of HDA/NaMMT organoclay

In this study, the rheologic and colloidal characterizations of sodium montmorillonite (NaMMT) were examined. Hexadecylamine (CH₃(CH₂)₁₅NH₂, HDA) was added to the bentonite water dispersion (2%, w/w) in different concentrations in the range 5.6 × 10⁻⁴−9.4 × 10⁻³ mmol/l. The rheological and electrokinetic behaviour of aqueous montmorillonite dispersions was investigated as a function of solid content and HDA concentration. The basal spacings of the HDA/NaMMT composites were studied by X-ray diffraction. The FTIR spectra were obtained from the modified bentonite products, which revealed the characteristic absorbances after treatment with HDA.     

Characterization of ion implantation through thin Ti metal layers on Si

Ion beam mixing of thin Ti films deposited on Si is investigated and its effect during subsequent thermal sintering determined. Both inert (Xe⁺) and dopant (As⁺) ions are used to intermix the metal films and Si substrate. The morphology of the suicide layer formed by this process and the structure of the silicide/Si interface is shown to be independent of the specific ions used for mixing. The structural differences observed are correlated to the electrical resistivity of the films. Transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) including ion channeling are used to characterize the films.     

High resistivity In-doped ZnTe: electrical and optical properties

Semi-insulating <111> ZnTe prepared by In doping during Bridgman growth was found to have a resistivity of 5.74 × 10⁷ ohm-cm, the highest reported so far in ZnTe, with hole concentration of 2.4 × 10⁹/cm³ and hole mobility of 46 cm² /V.s at 300 K. The optical band gap was 2.06 eV at 293 K compared with 2.26 eV for undoped semiconducting ZnTe. Thermally stimulated current (TSC) studies revealed 2 trap levels at depths of 202–222 meV and 412–419 meV, respectively. Photoluminescence (PL) studies at 10 K showed strong peaks at 1.37 eV and 1.03 eV with a weak shoulder at 1.43 eV. Short anneal for 3 min at 250°C led to conversion to a p-type material with resistivity, 14.5 ohm-cm, indicating metastable behaviour. Raman studies carried out on undoped and In-doped samples showed small but significant differences. Possible models for semi-insulating behaviour and meta-stability are proposed.     

Ion beam induced interface mixing of Ni on PTFE bilayer system studied by quadrupole mass analysis and electron spectroscopy for chemical analysis

We have investigated interfacial chemistry in a 100 nm Ni on PTFE (polytetrafluoroethylene) bilayer system induced by 120 MeV Au ions with fluences varying from 1 × 10¹² to 5 × 10¹³ ions/cm². In-situ quadrupole mass analysis (QMA) shows emission of Fluorine (F) and different fluorocarbons (C_xF_y) such as CF, CF₃, C₂F₃ etc. during irradiation. Electron spectroscopy for chemical analysis (ESCA) studies show that Ni reacts with chemically reactive species such as F⁻/F and C_xF_y ions or radicals emitted during irradiation forming NiF₂ and metal-polymer complexes (-CFNi-). Rutherford backscattering spectrometry (RBS) was used to analyze the atomic transport at the interface and strong interface mixing is observed at the ion fluence 5 × 10¹³ ions/cm². Atomic force microscopy (AFM) studies before and after irradiation show that surface roughness is increased from 6.9 to 12.4 nm with increasing fluence. Observed results have been explained on the basis of the chemical reactions taking place within molten ion tracks in the polymer and hot zones around the ion paths created in the Ni film. The studies show that swift heavy ion irradiation introduces strong chemical alteration in the system and induces chemical reactions within the ion track, which enhance ion beam mixing in Ni-PTFE bilayer systems.     

Silicide formation by Ar+ ion bombardment of Pd/Si

Palladium films, 45 nm thick, evaporated on to Si(111) were irradiated to various doses with 78 keV Ar⁺ ions to promote silicide formation. Rutherford backscattering spectroscopy (RBS) shows that intermixing has occurred across the Pd/Si interface at room temperature. The mixing behaviour is increased with dose which coincides well with the theoretical model of cascade mixing. The absence of deep RBS tails for palladium and the small area of this for silicon spectra indicate that short-range mixing occurs. From the calculated damage profiles computed with TRIM code, the dominant diffusion species is found to be silicon atoms in the Pd/Si system. It is also found that the initial compound formed by Ar⁺ irradiation is Pd₂Si which increases with dose. At a dose of 1×10¹⁶ Ar⁺ cm^–2, a 48 nm thickness of Pd₂Si was formed by ion-beam mixing at room temperature.