BixLa1-xFeO3薄膜的介电和铁电性质的研究

用溶胶-凝胶法制备了纯的和5%La掺杂的BiFeO3薄膜,研究了室温下薄膜的介电和铁电性质.介质性质研究表明,在6.8MHz和7.8MHz附近,BiFeO3薄膜和Bi0.95Ia0.05FeO3薄膜分别出现了介电损耗极大和介电常数的正负转变,归结为薄膜的介电性质由容性向感性的转化.而铁电测试表明,通过La掺杂,增强了薄膜的铁电性,同时有效地减少了BiFeO3薄膜的漏导.     

BixLa1-xFeO3薄膜的介电和铁电性质的研究

用溶胶-凝胶法制备了纯的和5％La掺杂的BiFeO3薄膜，研究了室温下薄膜的介电和铁电性质。介质性质研究表明，在6．8MHz和7．8MHz附近，BiFeO3薄膜和Bi0．95La0．05FeO3薄膜分别出现了介电损耗极大和介电常数的正负转变，归结为薄膜的介电性质由容性向感性的转化。而铁电测试表明，通过La掺杂，增强了薄膜的铁电性，同时有效地减少了BiFeO3薄膜的漏导。     

PbTiO3/BiFeO3多层薄膜的铁电性质

用溶胶一凝胶方法在LaNiO3底电极上制备了BiFeO3/PbTiO3多层薄膜.研究了室温下薄膜的结构,铁电性质和漏电流性质,并将其与纯的BiFeO3薄膜的性质进行了比较.从薄膜的XRD模式中可以观察到共存的BiFe3O相和PbTiO3相.通过电滞回线测量发现,在较低的测试电场下,BiFeO3/PbqTiO3多层薄膜表现出反铁电性;而在较强的测试电场下表现出铁电性.相对于纯的BiFeO3薄膜,BiFeO3/PbTiO3多层薄膜能够承受更高的测试电场而获得充分极化,从而表现出较强的铁电性.漏电流特性测试表明,相对于纯的BiFeO3薄膜,BiFeO3/PbTiO3多层薄膜具有更低的漏电流.     

LaNiO3底电极上的BiFeO3薄膜的铁电性能

用溶胶一凝胶方法在LaNiO3底电极上制备了500℃退火的BiFeO3薄膜.研究了室温下薄膜的结构,介电与铁电性质和漏电流性质.XRD研究表明薄膜呈R3m结构,没有观察到不纯相.铁电性研究表明,薄膜具有大的剩余极化强度,在600 kV/cm的测试电场下,薄膜的剩余极化强度为20uC/cm2,矫顽场为440 kV/cm.介电性质研究表明,在整个测试频率范围内,薄膜具有小的介电损耗.而漏电流特性测试表明,通过工艺的改进,有效的限制了BiFeO3薄膜的漏电流.     

La对BiFeO3薄膜的替代效应

用溶胶-凝胶方法在LaNiO3底电极上制备了纯的和10%A位La替代的BiFeO3薄膜.研究了室温下薄膜的介电与铁电性质和漏电流性质.铁电性研究表明,通过La替代,薄膜的铁电性得到显著增强,剩余极化强度由1.67 μC/cm2增加到2.20 μC/cm2.介电性质研究表明,在整个测试频率范围内,La替代的薄膜的介电性得到了增强.低频下的介电损耗增加而高频的介电损耗减少.而漏电流特性测试表明,La替代有效的限制了BiFeO3薄膜的漏电流.     

Pb1- xLaxTiO3薄膜的制备及介电性质的研究

在Pt/Ti/SiO2/Si(100)衬底上用溶胶－凝胶法制备了Pb1-xLaxTiO3薄膜,对膜进行XRD、SEM、介电、铁电性能测试,研究了退火温度、掺La量对薄膜性能的影响,结果发现在600℃下退火1h的PLT薄膜呈现钙钛矿结构,具有（100）面择优取向。在摩尔比x≤0.2的范围内,薄膜的矫顽场、剩余极化强度都随着掺La量的增加而降低,而其相对介电常数和介质损耗却随着掺La量的增加而增加。     

La0.5Sr0.5CoO3底电极上的BiNdFeO3薄膜的电性质。

用溶胶．凝胶方法在La0.5Sr0.5CoO3底电极上制备了纯的和10％A位Nd替代的BiFeO3薄膜。对薄膜的结构、形貌和电性质进行了研究。XRD研究表明两薄膜呈随机取向。而SEM测试结果表明，通过Nd替代，构成薄膜的晶粒显著减小，表面出现了针孔。铁电性研究表明，通过Nd替代，薄膜的铁电性得到显著增强，剩余极化强度由1．87μC/cm^2。增加到3．11μC/cm^2。而漏电流特性测试表明，Nd替代有效地限制了BiFeO3薄膜在正向偏压下的漏电流。     

溶胶—凝胶法制备BaTiO3薄膜的介电性质的研究

以正丁醇钛和钡为主要原料，采用溶胶－凝胶法在铂基底上制备了ＢａＴｉＯ３薄膜。用ＴＧ－ＤＴＡ和ＸＲＤ分析了该薄膜形成过程和结构。研究了薄膜厚度、温度和频率对薄膜的介电性质的影响。结果表明，在室温，１ｋＨｚ下，薄膜的介电常数ε’为７６０，介电损耗为０．０１７。     

溶胶-凝胶方法制备BiFeO3薄膜及其铁电性质

用溶胶-凝胶方法制备了BiFeO3薄膜,XRD研究表明薄膜呈随机取向,扫描电镜研究表明薄膜表面呈致密的多晶结构,薄膜与底电极之间没有互扩散。铁电性测试表明室温下的剩余极化强度为1．8μC／cm^2,与低温下BiFeO3单晶的剩余极化相当。介电损耗呈弥散型转化,与薄膜中的Bi46Fe2072相有关。     

磁控溅射制备(Pb1-xSrx)TiO3系铁电薄膜的实验研究

钛酸锶铅((Pb1-xSrx)TiO3,PST)固溶体材料是一种性能优良的钙钛矿型铁电材料,其形成铁电相的温度较低,且易于和半导体工艺结合,应用潜力较大.本文采用磁控溅射法制备了PST薄膜,并初步研究了其介电和铁电特性.结果表明,磁控溅射得到的PST薄膜必须进行一定的热处理,才能使之转变为具有铁电性的钙钛矿结构的铁电薄膜.其介电特性与测试频率有关,试样的饱和极化强度可达19μC/cm2,剩余极化强度可达6.6μC/cm2,矫顽场强达16kV/cm,热释电系数达10-4C/m2*K量级,表明所制备的PST薄膜具有良好的铁电性.     

溶胶-凝胶法制备BaxSr1-xTiO3铁电薄膜的研究

介绍了sol-gel法制备BaxSr1-xTiO3铁电薄膜的工艺参数。在溶胶中加入一定体积百分含量的干燥化学控制添加剂（DCCA）可有效的防止薄膜开裂。通过IR、XRD谱图、C－V回线、I－V曲线等测试方法比较了金属醇盐法和以部分醋酸盐代替醇盐法制备薄膜的微观结构和性能。实验结果表明,全部采用醇盐为原料制备的BST薄膜性能较好。通过两种方法制备BST薄膜性能的差异,本文提出了这两种方法的成膜机理。     

铁酸镧掺杂对铌酸钾钠基陶瓷介电和铁电性能的影响(英文)

用传统固相反应法制备了(K0.5Na0.5)NbO3(KNN)和0.98(K0.5Na0.5)NbO3-0.02LaFeO3(0.98KNN-0.02LF)无铅陶瓷,并对其介电、铁电性质以及相结构进行了研究.KNN陶瓷是正交相,0.98KNN-0.02LF陶瓷是伪立方相结构.介电研究表明:0.98KNN-0.02LF陶瓷的介温曲线与KNN陶瓷相比较出现两点异常:(i)正交相–四方相相变温度(TO-T)和四方相–立方相相变温度(TT-C)均降低;(ii)最高介电常数温度Tm附近的相变温度宽化.并且,0.98KNN-0.02LF陶瓷在0～400℃内显示了相对比较平坦的介电常数,介电常数达到2000,介电损耗低于4%.电滞回线变"窄"进一步证明了0.98KNN-0.02LF陶瓷的弛豫性.     

Effect of thermal stress on magnetic domain patterns of multiferroic Bi1-xDyxFeO3 thin films

Effect of temperature on magnetic domain structure of Bi_0.7Dy_0.3FeO₃ (BDFO) multiferroic thin films is studied in situ using magnetic force microscopy (MFM). Initially, as the temperature increases the domains start aligning from irregular to more distinct stripe pattern. However, above 250 °C, the domain alignment is disturbed. The systematic change in the domain configuration with temperature, suggests a strong thermal history of the system. The randomness in domain alignment caused above 250 °C is correlated to internal stress developed during ferromagnetic to paramagnetic phase transition occurring in BDFO. Indirect experimental evidence is given to support the explanation based on stress.     

Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

Bi_0.8La_0.2FeO₃ thin films on Pt/TiO₂/SiO₂/Si substrates at various substrate temperatures from 500 °C to 750 °C are prepared by pulsed laser deposition, and their microstructures and ferroelectric/magnetic properties are carefully investigated using various techniques. It is observed that the crystallographic orientation and Fe-ion valence state depend significantly on the substrate temperature, which consequently influences considerably on the ferroelectric and magnetic properties of the thin films. A considerable improvement of the ferroelectric and magnetic properties of the thin films can be achieved by optimizing the substrate temperature for deposition.     

A study of the optical properties of Bi0.7Ba0.15La0.15FeO3 thin film

Single phase Ba and La co-doped BiFeO₃ thin film was deposited on SrTiO₃ (001) substrate by RF magnetron sputtering. Its optical properties were determined by analyzing the transmittance and ellipsometry spectra. A band gap of 2.65 eV was obtained. Additionally, the optical dielectric functions were changed by applying a varying magnetic field, which was attributed to the magnetoelectric coupling.     

A High Temperature Piezoelectric Ceramic: (1-x)(Bi0.9La0.1)FeO3-xPbTiO3 Crystalline Solutions

(1-x)(Bi_0.9La_0.1)FeO_3-xPbTiO₃ (BLF-PT) crystalline solutions for x = 0.35, 0.37, 0.4, 0.43 and 0.45 have been prepared by the solid-state reaction method. The X-ray diffraction analysis shows that BLF-PT has a single perovskite phase with mixed tetragonal and rhombohedral phases between x = 0.4 and 0.43. The Curie temperature of BLF-PT for x = 0.4 attains 460degC, which is about 80degC higher than that of hard Pb(Zr,Ti)O₃ ceramics. The remnant polarization and piezoelectric constant of BLF-PT for x = 0.4 reach 38 muC/cm² and 112 pC/N, respectively. The planar coupling factor k_p of BLF-PT for x = 0.4 remains stable at temperature increases of up to 360degC. The impedance spectroscopy study reveals that the high temperature conduction of BLF-PT may be attributed to the motion of oxygen vacancies within the material. Our results indicate that BLF-PT is a promising candidate for high temperature applications.     

CdS-K2La2Ti3-xPbxO10的制备及其光催化性能

采用硬脂酸法合成K2La2Ti3-xPbxO10,通过微波辅助酸交换、胺柱撑、离子交换等步骤制备了CdS插层的K2La2Ti3-xPbxO10(记作CdS-K2La2Ti3-xPbxO10)复合光催化剂.利用X射线粉末衍射(XRD),场发射扫描电子显微镜(SEM),X射线能谱仪(EDX),紫外–可见漫反射吸收光谱(UV-Vis),X射线光电子能谱(XPS)和光致发光光谱(PL)等对产物进行表征,考察了CdS-K2La2Ti3-xPbxO10在紫外光及可见光下催化制氢活性.结果表明,Pb离子掺杂和CdS插层K2La2Ti3-xPbxO10拓展了催化剂的可见光吸收范围,提高了光催化活性.微波辅助制备的催化剂在紫外光和可见光照射3 h后的产氢量分别为230.15和3.35 mmol/(g cat),并对光催化机理进行了分析.