光学薄膜表面形貌的原子力显微镜观察

采用原子力显微镜（ＡＦＭ）,对常见的氧化物单层膜、增秀膜和高反膜的表面形貌进行了观测,并初步研究了激光预处理对薄膜表面形貌的影响。     

海藻酸薄膜表面超微结构的原子力显微镜研究

本文采用原子力显微镜（ＡＦＭ）对海藻酸生物薄膜表面的超微结构进行了实验研究,选择出最佳观察方法。结果发现薄膜上分布不规则的微孔,其长短孔径之比大约为３：２,微孔的中心距为孔径的２倍。     

粗糙薄膜表面的原子力显微镜研究和多重分形分析

用一系列生成元模拟了具有不同特征的、与原子力显微镜图像相似的规则粗糙表面。详细讨论了规则粗糙表面多重分形谱参数的意义。并通过与方均根粗糙度（rms）和简单分形维数D0的比较，描述了多重分形分析的优点。最后用多重分形的方法分析了由AFM测量的ZnO薄膜和高聚物PtBuA薄膜的表面形貌。     

原子力显微镜结合拉曼光谱仪对不同氧分压制备ZnO薄膜性能研究

利用磁控溅射技术,在硅基底上(100)成功制备了ZnO薄膜。分别利用原子力显微镜和拉曼光谱仪对其表面形貌、颗粒度、粗糙度和拉曼光谱性能进行表征、分析,两种方法所得结论基本吻合。研究结果表明,ZnO薄膜结晶度良好,颗粒分布均匀,具有良好的c轴取向。原子力显微镜表征结果表明,氧分压小于50%时,ZnO颗粒度和RMS粗糙度随通入氧气分压增加而减小:氧分压大于50%时,ZnO颗粒度和RMS粗糙度趋近于一常数。拉曼光谱表征结果表明,ZnO的拉曼特征峰E2(high)表现出尺寸效应,即随氧气增加(小于81.25%)ZnO颗粒度减小,使特征峰的峰位向高频移动,特征峰的半高宽增大;ZnO薄膜内部张力随氧气分压增加(小于81.25%)而减小。     

原子力显微镜在材料器件工艺中的应用

介绍了原子力显微镜在碲镉汞材料器件工艺测试方面的应用。应用其可以进行磨抛后材料表面的粗糙度测试,接触孔形貌,以及外延后衬底的表面形貌。通过合理的选择扫描参数和探针,可以直观得到样品的表面形貌,接触孔还可以得到孔的尺寸和孔底形貌。尤其在接触孔测试方面,原子力的精度更高,抗干扰能力强且扫描结果更为直观,准确。本文通过对碲镉汞材料器件工艺中不同类型样品测试的介绍,认为原子力显微镜在碲镉汞材料器件工艺测试中发挥了较大的作用。     

基于宽禁带半导体材料氮化镓的原子力显微镜分析

微波功率器件在无线通信技术领域扮演着重要角色,而宽禁带半导体材料对微波功率器件的研究起着关键作用。氮化镓作为宽禁带半导体的代表,具有介电常数小、载流子饱和速率高、热导率高等优良特性。文章通过对氮化镓外延材料进行深入的原子力显微镜(Atomic Force Microscope, AFM)分析,能够更精准地表征氮化镓外延材料,从而助力微波功率器件的发展。     

分子束外延InSb薄膜材料的表面微观形貌研究

用原子力显微镜等方法研究了在InSb (001)衬底和(001)偏(111)B面2°衬底上分子束外延生长的同质外延薄膜和掺Al薄膜样品表面的微观形貌。对比了不同衬底同质外延时生长模式的差异,并观察了加入Al后引入的交叉影线,分析了其产生的原因。研究表明,使用有偏角的衬底更有利于减少分子束外延薄膜的表面缺陷。     

离子束抛光硅片纳米级微观形貌的原子力显微镜研究

本文报道了用原子力显微镜（ＡＦＭ）研究多种Ａｒ￣＋离子抛光参数Ｓｉ（ｌｌｌ）表面的微观粗糙度和三维微观形貌特征，发现用离子束抛光方法可以显著地改善硅片表面的微观粗糙度，抛光效果与离子束能量、束流强度、抛光时间和束流入射角度等有关。用４００ｅＶ离子能量、１００ｍＡ束流强度、６０°入射角离子束照射２小时后再改用３５０ｅＶ、８０ｍＡ束流强度以同样入射角照射２小时的样品，在１μｍ×１μｍ范围表面微观粗糙度（ＲＭＳ）值可达到０．３ｎｍ左右。而当小入射角（＜２０°）照射时抛光效果很差，其表面明显地呈现出直径约几十到几百ｎｍ凹坑的蜂巢状形貌特征。     

摩擦强度对薄膜表面形态的作用:原子力显微镜下的观察

展示了摩擦强度对聚酰亚胺薄膜表面形态的影响，原子力显微图像显示，机械摩擦会使聚酰亚胺薄膜表面上形成微沟槽，这些沟槽的表面具有丰富的表面精细构造。原子显微图像还揭示了机械摩擦可以改变被磨擦聚酰亚胺膜的表面形态。     

原子力显微镜观察虫草多糖分子的结构形貌

本文通过原子力显微镜直接观察虫草多糖分子的三维结构的形貌。虫草多糖分子的稀溶液铺展在Ｎｉ＾２＋处理的云母片上,经干燥,乙醇固定后,获得稳定,重复的图像。结果表明虫草多糖分子具有高度分枝的结构,并且糖链间形成小环或螺旋结构     

退火态Cu膜表面形貌的分形特征

用磁控溅射工艺在Si基片上沉积500nm厚Cu膜,并在不同温度下进行快速退火处理。用扫描电镜（SEM）与原子力显微镜（AFM）观察薄膜表面形貌,并根据分形理论予以定量表征。结果表明：当退火温度T在小于673K范围内增加时,分形维数Dr逐渐减小;而当T增加至773K时,Dr异常增加。本文根据表面扩散、晶粒长大、缺陷形成等机制对其进行了分析。     

Correlation between the surface morphology and structure and the photoluminescence of amorphous PbTiO3 thin films obtained by the chemical route

A polymeric precursor method was used to synthesis PbTiO₃ amorphous thin film processed at low temperature. The luminescence spectra of PbTiO₃ amorphous thin films at room temperature revealed an intense single‐emission band in the visible region. The visible emission band was found to be dependent on the thermal treatment history. Photoluminescence properties versus different annealing temperatures were investigated. The experimental results (XRD, AFM, PL) indicate that the nature of photoluminescence (PL) must be related to the disordered structure of PbTiO₃ amorphous thin films. Copyright © 2000 John Wiley & Sons, Ltd.     

自支撑P(VDF-TrFE)红外探测器

本文中制备了具有自支撑绝热结构的Al/P(VDF/TrFE)/NiCr红外探测器单元,其中NiCr半透明膜作为探测器的上电极和吸收层。实验结果表明：P(VDF/TrFE)薄膜具有很好的铁电性和热释电性,其铁电剩余极化强度和热释电系数分别为7.1 μC/cm2 和27 μC/m2K;探测器单元在500 K温度下的电压响应率和探测率分别为4436 V/W和3.3×108 cmHz1/2W-1;通过对电压响应率随频率变化的实验数据进行拟合,得到探测器单位面积的热导和吸收率分别为2.6×10-3 W/cm2K 和0.1;利用P(VDF-TrFE)探测器单元可对目标物体实现热成像。     

Correlations between morphology and conductivity properties of films of polyaniline

Films of polyaniline (PANI) have been prepared using laser‐assisted deposition (LAD). The morphology of these films has been examined using low‐angle X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The films exhibit dense packing and better ordering of polymer strands as compared with films prepared using electrochemical deposition. The sheet resistance has been measured by the four‐probe method and decreases with increasing temperature. The films exhibit better conductivity in the morphologically ordered state. Copyright © 1999 John Wiley & Sons, Ltd.     

硅(001)衬底上生长的ZnO薄膜的AFM研究

对采用电子束反应蒸镀方法在低温下在硅（001）衬底上外延生长的ZnO薄膜的表面构像进行了原子力显微镜（AFM）观察，分析研究不同的衬底温度对薄膜表面形貌及结构特性的影响。在250℃衬底温度下获得的ZnO薄膜，膜表面平整，结构致密，表面平均不平整度小于3nm，说明在该衬底温度下获得的ZnO薄膜是高透明度、高质量、高度取向的单晶薄膜。     

Nanoimprint of ordered ferro/piezoelectric P(VDF-TrFE) nanostructures

The next generation of portable computing and communication devices tremendously depend on the technologies that enable the rapid manipulation, caching and high-density non-volatile data storage. The recent development of organic electronics requires high-quality organic memory compatible with other devices, which will eventually lead to the realization of all organic electronic systems. The challenge of the organic electronics application is to find less degradative ways of fabricating ferroelectric polymer nanostructures. In this work, we applied the nanoimprint technique to fabricate ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer line and dot nanostructures and compared the ferroelectric properties and domain formation in these two nanostructures.     

The trapping,detrapping, and transport of the ambipolar charges in the electret of Polystyrene/C60 blend films

The electrons and holes were injected into the blend electrets of polystyrene and C₆₀ (PS/C₆₀) by adjusting the biases of conductive atomic force microscopy probe. We visualized the charges trapping, release, diffusion, and retention processes of the PS/C₆₀ electrets by utilizing the Kelvin Probe Force Microscopy (KPFM), and found that the localization and retention abilities of the ambipolar charges are enhanced with the increase of C₆₀ content, indicating that blending C₆₀ in PS matrix is a promising method for the charge trapping layer in transistor memory devices. Furthermore, we discussed the storage and diffusion mechanisms, and speculated that the interface of C₆₀ and PS in the blend electrets and repulsive force between charge clusters around C₆₀ are the important factors for the novel storage effect of the blend electret.     

Stable growth of large-area single crystalline thin films from an organic semiconductor/polymer blend solution for high-mobility organic field-effect transistors

We developed an effective and steady solution-processing technique for a small molecule–type semiconductor, C₁₀–DNBDT–NW, by adding an amorphous PMMA polymer to produce stable growth of a two-dimensional large-area single-crystalline thin film by effective phase separation at a crucially faster processing speed compared to the case without the addition of a polymer. By using this solution-processing technique, it is noteworthy that the single-crystalline films of C₁₀–DNBDT–NW/PMMA exhibit the highest and average mobilities of 17 and 10.6 cm²/Vs, respectively. Furthermore, we also show the limitations of two-dimensional continuous growth of a single-crystalline film in terms of the solution technique.     

塑料薄膜衬底上复合敏感膜热释电传感器的制备

将Sol-Gel法制备的掺钙钛酸镧铅纳米粉粒(PCLT)与聚偏氟乙烯-三氟乙烯(P(VDF-TrFE)均匀复合,作为热释电传感器的敏感膜,比同样制备条件的纯聚偏氟乙烯-三氟乙烯膜的探测优值高约22.4%。并以沉积有35nmITO薄膜的廉价PET塑料为衬底,用旋转涂膜法沉积PCLT/P(VDF-TrFE)复合敏感膜,用Ni-Cr薄膜作上电极,制备了PCLT/P(VDF-TrFE)/PET热释电传感器。PET塑料可有效降低热释电元件的热导,下电极ITO可反射红外辐射,明显提高了传感器的电压响应和降低热释电元件的热噪声。测试结果表明,PCLT/P(VDF-TrFE)/PET热释电传感器的探测率达到3.4×107cmHz1/2W-1,比同样制备条件的体硅衬底传感器高2个数量级以上。     

退火温度对WO3薄膜结构及气敏性能的影响

采用直流磁控溅射法制备了WO3薄膜,并在350~550℃时对薄膜进行退火处理,研究了退火温度对薄膜结构及气敏性能的影响。结果表明:退火前及350℃退火后的薄膜为非晶态,450℃和550℃退火后的薄膜为WO3–x型晶态;随退火温度的提高,薄膜厚度增加,晶粒度增大。550℃退火后薄膜的厚度,较450℃退火后薄膜厚30nm,晶粒度相差8nm;450℃和550℃退火后的薄膜,在150℃时对体积分数为0.05%的NO2的灵敏度接近于22。