Electrical characterization of Au/n-GaN metal-semiconductor and Au/SiO2/n-GaN metal-insulator-semiconductor structures

In the present work, we have investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/SiO₂/n-GaN metal-insulator-semiconductor (MIS) Schottky diode and compared with Au/n-GaN metal-semiconductor (MS) Schottky diode. Calculations showed that the Schottky barrier height and ideality factor of the MS Schottky diode is 0.79 eV (I-V), 0.87 eV (C-V) and 1.45, respectively. It is observed that the Schottky barrier height increases to 0.86 eV (I-V), 0.99 eV (C-V) and ideality factor deceases to 1.3 for MIS diode. For the MS diode, the calculated doping concentration is 4.17 × 10¹⁷ cm⁻³. However, in the case of the MIS Schottky diode, the decrease in doping concentration is observed and the respective value is 2.08 × 10¹⁷ cm⁻³. The obtained carrier concentration of the MIS diode is reduced about 50% when compared to the MS diode. The interface state density as determined by Terman's method is found to be 3.79 × 10¹² and 3.41 × 10¹⁰ cm⁻² eV⁻¹ for the MS and MIS Schottky diodes, respectively. The calculated interface densities are 2.47 × 10¹¹ cm⁻² eV⁻¹, 3.35 × 10¹¹ cm⁻² eV⁻¹ and 3.5 × 10¹¹ cm⁻² eV⁻¹ for the sweep rates of 300, 450 and 600 mV/s from MOS C-V measurements for the MIS Schottky diode. The interface state density calculated from Terman's method is found to be increased with sweep rate. From the C-V measurement, it is noted that the decrease in the carrier concentration in MIS diodes as compared to MS diode may be due to the presence of oxide interfacial layer. DLTS measurements have also been performed on MIS Schottky diode and discussed.     

Effects of post-annealing on Schottky contacts of Pt/ZnO films toward UV photodetector

The Schottky contact of Pt/ZnO was formed by depositing ZnO films oriented along c-axis by pulsed-laser deposition on Pt/Ti buffer layer supported by SiO₂/Si substrate. Effects of the post-annealing on the crystallinity, uniformity and native defects of ZnO film as well as Schottky contacts of Pt/ZnO films were investigated. Results show that the annealing can improve the crystallinity of ZnO film, suppress the native defects, and enhance the performance of Pt/ZnO Schottky contacts dramatically. The best Schottky diode shows the largest barrier height of 0.8 eV with reverse leakage current of 1.5 × 10⁻⁵ A/cm². The zero-biased photodetector based on the best Schottky diode possesses responsivity of 0.265 A/W at 378 nm, fast photo-response component with rise time of 10 ns and fall time of 17 ns. This report demonstrates possibility of ZnO films/Pt hetero-junction with large area Schottky contact, and establishes the potential of this material for use in UV photodetector devices.     

The current–voltage and capacitance–voltage characteristics of molecularly modified β-carotene/n-type Si junction structure with fluorescein sodium salt

β-Carotene–FSS organic semiconductor/n-type Si structure has been characterized by current–voltage and capacitance–voltage methods. A deviation in I–V characteristic of the diode is observed due to effect of series resistance and interfacial layer. Cheung's functions were used to calculate diode parameters. The ideality factor, series resistance and barrier height values of the diode are n = 1.77, R_s = 10.32 (10.39) kΩ and 0.78 eV. The obtained ideality factor suggests that Au/β-carotene–FSS/n-Si Schottky diode has a metal–SiO₂ oxide layer plus organic layer–semiconductor (MIOS) configuration. The capacitance–voltage characterizations of Au/β-carotene–FSS/n-Si diode at different temperatures were performed. The capacitance of the diode changes with temperature. The barrier height and ideality factor obtained from C–V curves are 0.67 eV and 1.68. The interface density properties of the diode are analyzed and the shape of the density distribution of the interface states is in the range of E_c −0.49 to −0.62 eV. It is evaluated that the FSS organic layer controls electrical charge transport properties of Au/β-carotene/n-Si diode by excluding effects of the β-carotene and SiO₂ residual oxides on the hybrid diode.     

Modification of electrical properties of the Au/1,1′ dimethyl ferrocenecarboxylate/n-Si Schottky diode

The electrical and interface state density properties of the Au/1,1′ dimethyl ferrocenecarboxylate (DMFC)/n-Si structure have been investigated by current–voltage, capacitance–voltage and conductance–frequency methods. The Au/DMFC/n-Si structure exhibits a rectifying behavior with a non-ideal I–V behavior with an ideality factor greater than unity. The ideality factor and barrier height of the Au/DMFC/n-Si Schottky diode is lower than that of Au/n-Si Schottky diode. The interface state density of the diode was determined from G/ω–f plots and was of order of 5.61 × 10¹² eV^?1 cm^?2. It is evaluated that the electrical properties of Au/n-Si diode is controlled using 1′ dimethyl ferrocenecarboxylate organic layer and in turn, Au/DMFC/n-Si structure gives new electronic parameters.     

Electronic properties of Al/DNA/p-Si MIS diode: Application as temperature sensor

The current-voltage (I-V) measurements were performed in the temperature range (200-300 K) on Al/DNA/p-Si Schottky barrier type diodes. The Schottky diode shows non-ideal I-V behaviour with ideality factors n equal to 1.34 ± 0.02 and 1.70 ± 0.02 at 300 K and 200 K, respectively, and is thought to have a metal-interface layer-semiconductor (MIS) configuration. The zero-bias barrier height Φ_b determined from the I-V measurements was 0.75 ± 0.01 eV at 300 K and decreases to 0.61 ± 0.01 eV at 200 K. The forward voltage-temperature (V_F-T) characteristics were obtained from the I-V measurements in the temperature range 200-300 K at different activation currents (I_F) in the range 20 nA-6 μA. The V_F-T characteristics were linear for three activation currents in the diode. From the V_F-T characteristics at 20 nA, 100 nA and 6 μA, the values of the temperature coefficients of the forward bias voltage (dV_F/dT) for the diode were determined as −2.30 mV K⁻¹, −2.60 mV K⁻¹ and −3.26 mV K⁻¹ with a standard error of 0.05 mV K⁻¹, respectively.     

Electrical and optical characteristics of Au/PbS/n-6H-SiC structures prepared by electrodeposition of PbS thin film on n-type 6H-SiC substrate

To realize Schottky barrier height (SBH) modification in the Au/n-6H-SiC Schottky diodes, lead sulfide (PbS) thin films were grown on n-6H-SiC by electrodeposition method. At first, XRD experiments were performed to investigate the crystal structure of the PbS film electrodeposited on n-6H-SiC. It has been deduced from the diffraction profile that the PbS thin film has a crystal structure more strongly oriented along the [2 0 0] direction. An optical energy band gap value of 1.42 eV for the PbS film was obtained from its optical absorption spectra. Then, we have prepared Au/PbS/n-6H-SiC Schottky barrier diodes (SBDs) with interface layer and reference Au/n-6H-SiC/Ni SBDs. The SBH enhancement has been succeeded by the PbS interlayer, influencing the space charge region of the SiC. The SBH values of 1.03 and 0.97 eV for the samples with and without the interfacial PbS layer were obtained from the forward bias current-voltage (I-V) characteristics. The SBH increase in the Au/PbS/n-6H-SiC SBD with the interfacial PbS layer has been attributed to the fact that the interface states contain a net negative interface charge in metal/n-type semiconductor contact due to the presence of the interfacial PbS layer.     

Analysis of current-voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

The polycrystalline ZnGa₂Se₄ thin film was prepared by thermal evaporation technique on n-Si wafer followed by annealing at 700 K. Then, the Al/p- ZnGa₂Se₄/n-Si/Al heterojunction diode was fabricated. XRD pattern shows that the annealed ZnGa₂Se₄ film has a polycrystalline structure. AFM images indicate that the ZnGa₂Se₄ film is formed of nanoparticles. The dark current-voltage characteristics of the heterojunction diode at various temperatures have been investigated to determine the electrical parameters and conduction mechanism. The Al/p-ZnGa₂Se₄/n-Si/Al diode shows a rectification ratio of 2.644 × 10² at ±2 V at room temperature. It was found that at forward bias voltages ≤0.5 V, the conduction mechanism of the diode is controlled by the thermionic emission mechanism, while at bias voltages higher than 0.5 V, it is controlled by the space charge limited current mechanism. The series resistance R_s, the ideality factor n and the barrier height ?_b values of the diode are determined by performing different plots from the forward current-voltage characteristics. The reverse current mechanism of the diode is controlled by the carrier generation-recombination process in the depletion region. The obtained results show that the Al/p-ZnGa₂Se₄/n-Si/Al heterojunction is a good candidate for the electronic device applications.     

Electrical and photoelectrical properties of Schottky barrier devices using the chloro aluminium phthalocyanines

Measurements of electrical and photoelectrical properties of Al/ClAlPc/ITO, In/ClAlPc/ITO and Au/ClAlPc/Au are presented. The devices Al/ClAlPc/ITO and In/ClAlPc/ITO show rectification properties, while device Au/ClAlPc/Au does not show rectification properties. These effects are explained in terms of p-type semiconducting behaviour of ClAlPc film and its formation of a Schottky barrier with Al and In electrodes and ohmic contact with ITO and Au electrodes. Under low forward bias (Al and In electrodes are negative with respect to ITO) Ohm's law is followed with a thermally activated hole concentration of p_o = 2.2 × 10¹⁷ m⁻³, a hole mobility μ_p = 1.2 × 10⁻⁶ m² V⁻¹ s⁻¹ and room temperature conductivity σ = 4.8 × 10⁻⁸ (Ω m)⁻¹. At high applied voltage there is a space charge limited conductivity (SCLC) controlled by a discrete trapping level above the valence band edge. The total trap concentration and depth of trap level are 1.4 × 10²⁴ m⁻³ and 0.78 eV, respectively. Under reverse bias, the conduction process is determined by Schottky emission over a potential barrier of height of 0.65 eV in the low voltage range and the Poole-Frenkel effect for higher voltage. On illumination through the ITO electrode with monochromatic light of 20 mW cm⁻² at 660 nm, the device parameters of the Al/ClAlPc/ITO and In/ClAlPc/ITO cells were determined. The experimental absorption and action spectra data are explained with the help of the comprehensive theoretical model proposed by Ghosh and Feng for organic solar cells.     

Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering

A Molybdenum Schottky diode on unintentially doped p-GaTe was fabricated using DC sputtering. I-V characteristics of the fabricated diode were measured as a function of temperature at the range of 50-300 K. The barrier parameters of Mo/p-GaTe are interpreted using thermionic emission theory and inhomogeneities observed in the barrier are characterized with Gaussian distribution approach on the basis of parallel conduction model. The barrier height and the ideality factor values at 300 K and at 80 K of Mo/p-GaTe were calculated to be 0.581 eV, 1.097 and 0.472 eV, 1.349, respectively. The barrier parameters changed resolutely at 140-300 K temperature range and a strong temperature dependence was observed below 130 K. The weighting coefficients, standard deviations and mean barrier heights were calculated for sub distributions. Richardson plot was interpreted with a new approach and Richardson constant was found to be 117.96 AK⁻² cm⁻² for p-GaTe.     

Photovoltaic properties of a single layer poly [3-(4-octylphenyl)-2,2′-bithiophene] (PTOPT)

A Schottky contact is made from a single layer polymer poly [3-(4-octylphenyl)-2,2′-bithiophene] (PTOPT) in its neutral state and a low work function metal (Al). The electrical and optical properties have been investigated by means of I–V measurements in the dark and under illumination. Various parameters such as the reverse saturation current density, barrier height, and diode quality factor were determined from the I–V curves in the dark of Al/PTOPT/ITO sandwich structure using thermionic emission theory. Spectral response of the device was measured at various wavelengths giving a peak at 500 nm. The IPCE% was obtained for illumination through both the Al and ITO sides. By illuminating the diode with a monochromatic light of wavelength 500 nm, the open-circuit voltage, short-circuit current density, power conversion efficiency, and fill-factor (FF) were obtained. The dependence of photocurrent on light intensity was also recorded and analyzed.     

Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

The variations in the electrical properties of Cr Schottky contacts formed by electrodeposition technique on n-type Si substrate have been investigated as a function of temperature using current-voltage (I-V) and capacitance-voltage (C-V) measurements in the temperature range of 80-320 K by steps of 20 K. The basic diode parameters such as ideality factor (n) and barrier height (Φ_b) were consequently extracted from the electrical measurements. It has been seen that the ideality factor increased and the barrier height decreased with decreasing temperature, when the I-V characteristics were analyzed on the basis of the thermionic emission (TE) theory. The abnormal temperature dependence of the Φ_b and n and is explained by invoking two sets of Gaussian distribution of barrier heights at 320-200 K, and 180-80 K. The double Gaussian distribution analysis of the temperature-dependent I-V characteristics of the Cr/n-type Si Schottky contacts gave the mean barrier heights of 0.910 and 0.693 eV and standard deviations (σ_s) of 109 mV and 72 mV, respectively. Then, these values of the mean barrier height have been confirmed with the modified ln(I₀/T²) − q²/2k²T² versus 1/T plot which belongs the two temperature regions.     

Structural and optical characterizations of pyronine B thin films and its photovoltaic applications

In this work, the organic thin films of pyronine B (PYR.B) were deposited by thermal evaporation technique under high vacuum (∼10⁴ Pa). The crystal structure, examined by X-ray powder diffraction, indicates that the films are single phase with strong preferred (4 0 0) orientation. Scanning electron micrographs of the films indicate a clearly almost uniform distribution with large grain sizes in the range 5-10 μm. The molecular structure and electronic transitions of PYR.B were investigated by Fourier-transform infrared (FTIR). Fluorescence characteristic of PYR.B at room temperature (300 K) exhibits visible band peak located at 569.65 nm. The color parameters were extracted from the reflectance spectrum of PYR.B. The optical constants such as refractive and extinction indices were determined from the measured transmittance and reflectance spectra using the spectrophotometric method. The dependence of absorption coefficient on the photon energy was determined and the analysis of the result showed that the optical transition in PYR.B is allowed and direct. The current density-voltage (J-V) characteristics in dark show the rectification effect due to the formation of Schottky barrier at Al/PYR.B interface. The photovoltaic parameters were calculated from the J-V characteristics under illumination through ITO and discussed in detail.     

Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380 K with 20 K intervals. The short current density (J_sc) and open circuit voltage (V_oc) parameters have been determined between 40 and 100 mW/cm². The photovoltaic parameters of the device have been also determined under 100 mW/cm² and AM1.5 illumination condition.     

Photocarriers generation process and photovoltaic effect in PPHT thin film Schottky barrier devices

Photogeneration process and photovoltaic effect of Al/poly(3-phenylhydrazone thiophene) (PPHT)/ITO and In/PPHT/ITO sandwich devices were investigated by measuring steady state photocurrent resulting from illuminating through the ITO electrode. From the comparison of photoaction spectra of the device with the absorption spectra of the PPHT layer, it was observed that PPHT forms Schottky barrier with In and Al and ohmic contact with ITO. The voltage dependence of the photocurrent in the vicinity of V_bi was measured at 1 mW/cm² of the incident illumination to give the open circuit voltage (V_oc) and short circuit photocurrent (J_sc). The photoaction spectra of the device also suggest that only light absorbed near the blocking contact, i.e., at Al/PPHT, In/PPHT is effective in producing carriers for external circuit. The dependence of the short circuit photocurrent on the illumination intensity was also described in detail. Various photovoltaic parameter was also calculated from the current–voltage (J–V) characteristics of the open device under illumination through ITO.     

Sulphidation/oxidation behaviour of TiAlCr and Al2Au coated Ti45Al8Nb alloy at 750 °C

In this paper, we present the sulphidation/oxidation behaviour of a Ti45Al8Nb (at%) alloy coated with different protective surface films. Two intermetallic coatings are considered; TiAlCr and Al₂Au deposited by physical vapour deposition. The coated alloy was subjected to a H₂/H₂S/H₂O yielding pS₂ - 10⁻¹ Pa and pO₂ - 10⁻¹⁸ Pa potentials at 750 °C for up to 1000 h. The corrosion kinetics were determined by means of discontinuous gravimetry and the as-received and exposed samples were characterised using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction analysis (XRD). The materials showed the development of a multilayered structure. In the case of the TiAlCr coated Ti45Al8Nb - base alloy, Al₂O₃, TiO₂ and Cr₂S₃ developed. For the Al₂Au coated Ti45Al8Nb samples an Al₂O₃ scale containing TiO₂ nodules was observed at the surface.     

Dual codoping for the fabrication of low resistive p-ZnO

A dual codoping method has been proposed to fabricate low resistive and stable p-ZnO thin films. Both nitrogen (N) and arsenic (As) have been used as acceptors while aluminum (Al) as donor in our dual codoping process. The As-Al-N dual codoped ZnO films have been prepared by RF magnetron sputtering on GaAs substrate using AlN doped ZnO targets (0.5, 1 and 2 mol%). In our dual codoping approach, Al and N from target and As from GaAs substrate (back diffusion) take part. X-ray diffraction (XRD), room temperature and low temperature photoluminescence (PL), electron probe micro analysis (EPMA), energy dispersive spectroscopy (EDS), atomic force microscopy (AFM) and Hall effect measurement have been performed to investigate the effect of AlN concentration on the dual codoped ZnO films. All the films (0, 0.5 and 1 mol%) showed p-type conductivity except 2 mol% AlN doped film. The lowest room temperature resistivity, 8.6 × 10⁻² Ω cm has been achieved with a hole concentration of the order, 10²⁰ cm⁻³ for the optimum 1 mol% AlN concentration. The observed resistivity is much lower than that of monodoped (As or N) and codoped (AlN or AlAs) ZnO films. The p-type conductivity has been explained by the new complex formation mechanism.     

Energy level alignment in N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/hexadecafluoro copper phthalocyanine (F16CuPc)/Au and NPB/CuPc/Au heterojunction

The interfacial electronic structures of N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/hexadecafluoro copper phthalocyanine (F₁₆CuPc)/Au and NPB/copper phthalocyanine (CuPc)/Au were investigated by in situ X-ray and ultraviolet photoelectron spectroscopy to study the hole-injection barrier depending on the ionization energy of hole-injection layer materials. Although the measured ionization energy of F₁₆CuPc (6.30 eV) was much higher than that of CuPc (5.15 eV), the difference in the barrier heights of the two different films was relatively marginal (0.27 eV) due to the formation of interface dipole caused by the charge redistribution. We confirmed that the interface dipole of the buffer layer (CuPc and F₁₆CuPc) pushed down the core levels as well as the valence levels of the top organic layer (NPB) in the NPB/F₁₆CuPc/Au and NPB/CuPc/Au heterojunction.     

The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact

The Al/tetraamide-I/p-Si Schottky barrier diode (SBD) has been prepared by adding a solution of a novel nonpolymeric organic compound chiral macrocylic tetraamide-I in chloroform on top of a p-Si substrate and then evaporating the solvent. It has been seen that the forward-bias current–voltage (I–V) characteristics of Al/tetraamide-I/p-Si SBD with a barrier height value of 0.75 eV and an ideality factor value of 1.77 showed rectifying behaviour. The energy distribution of the interface state density determined from I–V characteristics increases exponentially with bias from 5.81 × 10¹² cm⁻² eV⁻¹ at (0.59-E_v) eV to 1.02 × 10¹³ cm⁻² eV⁻¹ at (0.40-E_v) eV. It has showed that space charge limited current (SCLC) and trap charge limited current (TCLC) are the dominant transport mechanisms at large forward-bias voltages.     

Corrosion behaviour of zinc deposits obtained under pulse current electrodeposition: Effects of coumarin as additive

The corrosion behaviour of zinc deposits obtained under pulsed current electrodeposition from an acidic chloride bath in the presence and absence of coumarin has been investigated. The effects of pulse peak current density (J_p) on the morphology of zinc deposits were studied by scanning electron microscopy. An increase in J_p from 40 to 280 A dm⁻² yields deposits with a finer grain size. The refinement of the grain size was more considerable in the presence of coumarin (J_p = 280 A dm⁻²). The preferred orientation of zinc deposits was studied by X-ray diffraction. At J_p = 40 A dm⁻², the preferred orientation of zinc deposits was (1 0 3) and changed to (0 0 2) at J_p = 80 A dm⁻². An increase in J_p to 280 A dm⁻² did not change the preferred crystallographic orientations except for an increase in the peak intensity of the (0 0 2) plane. In the presence of coumarin, the preferred crystallographic orientations changed at J_p = 280 A dm⁻² from the (0 0 2) plane to the (1 0 3) plane. The corrosion behaviour was investigated in an aerated 3.5% NaCl solution; the anodic polarization and electrochemical impedance spectroscopy curves were performed. The corrosion resistance of zinc deposits was improved by increasing the pulse peak current density (J_p); whereas, the presence of coumarin did not improve the corrosion resistance.