Growth characteristics and film properties of gallium doped zinc oxide prepared by atomic layer deposition

We carried out comprehensive studies on structural, optical, and electrical properties of gallium-doped zinc oxide (Ga:ZnO) films deposited by atomic layer deposition (ALD). The gallium(III) isopropoxide (GTIP) was used as a Ga precursor, which showed pure Ga₂O₃ thin film with high growth rate. Using this precursor, conductive Ga doped ZnO thin film can be successfully deposited. The electrical, structural and optical properties were systematically investigated as functions of the Ga doping contents and deposition temperature. The best carrier concentration and transmittance (7.2?×?10²⁰ cm^?3 and 83.5 %) with low resistivity (≈3.5?×?10^?3?Ωcm) were observed at 5 at.% Ga doping concentration deposited at 250 °C. Also, low correlation of deposition temperature with the carrier concentration and film structure was observed. This can be explained by the almost same atomic radius of Ga and Zn atom.     

Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates

Highly conducting and transparent aluminum doped zinc oxide (ZnO:Al) thin films have been deposited on polyimide substrate by r.f. magnetron sputtering at room temperature. The influence of sputter pressure and thickness on the structural, electrical, and optical properties of ZnO:Al films deposited on polyimide substrate is reported. The crystallinity and degree of orientation was increased by decreasing the sputter pressure. For higher sputtering pressures an increase on the resistivity was observed due to a decrease on the mobility and the carrier concentration. As the film thickness was increased, the crystallite sizes were increased, but the average transmittance in the wavelength range of the visible spectrum was decreased. The electrical performances of the ZnO:Al films deposited on glass substrates are slightly worse than the ones of the films deposited on polyimide substrates with same thickness. The lowest resistivity of 8.6?×?10^?4 Ω cm can be obtained for films deposited on glass substrate with the thickness of 800 nm.     

Effects of the Ga-doping concentration on the characteristics of Zn<Subscript>0.7</Subscript>Mg<Subscript>0.3</Subscript>O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization

Ga-doped Zn_0.7-xMg_0.3O thin films were deposited on glass substrates at 350 °C by metal-organic chemical vapor deposition using an ultrasonic nebulization technique to transport the source precursors, and the effects of the Ga-doping concentration were investigated. The films with Ga-doping concentrations less than 5 mol% grew with [001] preferred orientation perpendicular to the substrate surface and were composed of large crystallites. At Ga content greater than 5 mol%, the films grew with random orientation and very small crystallite size. The charge carrier concentration in the films increased rapidly up to 4 mol% Ga and then decreased gradually with further increases in the Ga-content. The film resistivity decreased with increasing Ga-content up to 4 mol% due mainly to the increase in charge carrier concentration. Then, the resistivity increased gradually with increasing Ga-content due to the decrease in mobility. The lowest resistivity of the Ga-doped Zn_0.7-xMg_0.3O thin film was 3.8?×?10^?1 Ωcm at the Ga doping concentration of 4 mol%. The mean transmittance in the visible range was more than 85% in all films. The optical band gap of the films increased with increasing Ga-doping concentration up to 5 mol% due to the Burstein-Moss effect.     

Effect of fluorine doping on the properties of ZnO films deposited by radio frequency magnetron sputtering

ZnO films with varying fluorine content were prepared on Corning glass by radio frequency magnetron sputtering of ZnO target containing ZnF₂ at room temperature, and the compositional, electrical, optical, and structural properties of the as-grown films together with the vacuum-annealed films were investigated. The fluorine content in the fluorine doped ZnO (FZO) films increased almost linearly with increasing ZnF₂ content in sputter target, and the highest atomic concentration was 7.3%. Vacuum-annealing caused a slight reduction of fluorine content in the films. The resistivity of the as-grown FZO films deposited showed a typical valley-like behavior with respect to the fluorine content in film, i.e. having minimum resistivity at intermediate fluorine content. Despite high fluorine content in the FZO films, the carrier concentration remained below 1.2?×?10²⁰ cm^?3, leading to very low doping efficiency level. Upon vacuum-annealing, the resistivity of FZO films decreased substantially due to increase in both the carrier concentration and the Hall mobility. From the structural analysis made by X-ray diffraction study, it was shown that addition of small amount of fluorine enhanced the crystallinity of FZO films with (002) preferred orientation, and that large amount of fluorine addition yielded disruption of preferred orientation. It was also shown that doping of fluorine rendered a beneficial effect in reducing the absorption loss of ZnO films in visible range, thereby substantially enhancing the figure of merit.     

Fabrication and characterization of Au/SBT/LZO/Si MFIS structure

Ferroelectric SrBi₂Ta₂O₉ (SBT) films on a p-type Si (100) wafer with a LaZrO _x (LZO) buffer layer have been fabricated to form a metal-ferroelectric-insulator–semiconductor (MFIS) structure. The LZO thin film and SBT films were deposited by using a sol–gel method. The equivalent oxide thickness (EOT) value of the LZO thin film was about 8.83 nm. Also, the leakage current density of the LZO thin film is about 3.3?×?10^?5 A/cm² at bias sweeping voltage of ±5 V. SBT films were crystallized in polycrystalline phase with highly preferred (115) orientation. Also, the intensity of each pick slightly increased as thickness of SBT films increased. The C–V characteristics of Au/SBT/LZO/Si structure showed clockwise hysteresis loop. The memory window width increased as the thickness of SBT films increased. The leakage current density of Au/SBT/LZO/Si structure decreased as thickness of SBT films increased.     

Characterization of PT ferroelectric thin films on porous silica for pyroelectric IR detectors

Ferroelectric PbTiO₃ thin films were deposited on Pt/DS/PS/SiO₂/Si substrates by sol–gel technique. Porous silica (PS) thin film was used as thermal-insulation layer and dense silica (DS) thin film was a buffer layer to reduce surface roughness of PS layer. Root mean square surface roughness can be effectively reduced from 9.7 to 3.5 nm after PS buffer layer was prepared. The average grain size of PT thin films decreased slightly with increasing thickness of porous silica. Dielectric constant of PT increased from 107 to 171 at 1 KHz as thickness of PS layer increased from 0 to 2,000 nm. PT thin film prepared on 2,000 nm porous silica exhibited good dielectric property. The leakage current density was less than 1.6?×?10^-6 A/cm² when the applied electrical field was 200 kV/cm. The composite film is suitable for preparing pyroelectric IR detectors.     

Study on the electrical and optical properties of ITO and AZO thin film by oxygen gas flow rate

Transparent conductive oxide (TCO) thin films such as tin doped indium oxide (ITO), zinc doped indium oxide (IZO) and Al doped zinc oxide (AZO) have been widely used as transparent electrode for display. ITO and AZO thin films for display was prepared by the facing targets sputtering (FTS) system. The FTS method is called a plasma-free sputter method because the substrate is located apart from plasma. This system can deposit the thin film with low bombardment by high energetic particles in plasma such as γ-electrons, negative ions and reflected Ar atoms. ITO and AZO thin films were deposited on glass substrate at room temperature with oxygen gas flow rate and input power. And the electrical, structural and optical properties of the thin films were investigated. As a result, the resistivity of ITO, AZO thin film is 6?×?10^?4 Ω cm, 1?×?10^?3 Ω cm, respectively. And the optical transmittance of as-deposited thin films is over 80% at visible range.     

Effects of temperature on structural and optical properties of ZnMgO films fabricated by pulsed laser deposition

ZnMgO thin films have been deposited on Si(111) substrates by pulsed laser deposition (PLD) technique at growth temperature from 300 to 700°C in nitrogen ambient of 1.0 Pa. The effects of growth temperature on structural and optical properties of deposited ZnMgO thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), infrared absorption (IR) spectra and photoluminescence (PL) spectra. The results of XRD and SEM analyses show that the film fabricated at 400°C possesses good crystallinity with hexagonal wurtzite structure and surface morphology. The Mg has been incorporated into ZnO in the form of substitutional Zn. The IR spectra reveal the typical absorption peaks of ZnMgO. The band-gap values have been obtained from 2.96 to 4.23 eV with increasing growth temperature. The PL spectra show that the highest UV emission is obtained at growth temperature of 600°C, and the obvious blue-shift is observed. This may be assigned as the change of the band-gap due to the increasing incorporation of Mg²⁺ ions with the increasing growth temperature.     

Spectroscopic ellipsometric determination of optical properties of V-Al co-doped ZnO films by rf magnetron sputtering

Zn_0.9?xV_0.1Al_xO aerogel nanopowders were prepared in thin film form on glass substrates using a rf magnetron sputtering system. The films were characterized by Scanning electron microscopy (SEM) and X-ray diffraction technique (XRD). The XRD results indicate that all the films have c-axis preferred orientation due to self-texturing mechanism. The ellipsometric spectra of the films were recorded in the photon energy range of 1 eV–5 eV. The SE spectra were analyzed with an appropriate model to accurately determine the thickness and optical constants of the ZnO:(V,Al) thin films. The profiles of refractive index and extinction coefficient with photon energy were extracted. The refractive index of the ZnO:(V,Al) film is decreased from 2.14 to 2.07 with increasing Al concentration and then is increased to 2.19 for x?=?0.04. A maximum band gap energy of ~3.57 eV was obtained for x?=?0.02. The optical band gaps of the films were found to vary from 3.57 eV to 3.41 eV, with Al content. It is evaluated that the optical constants of the ZnO:(V,Al) films can be controlled by Al content.     

Structure and dielectric properties of Ca-doped (Ba0.7Sr0.3) TiO3 thin films fabricated by sol–gel method

A wide range of Ca-doped (Ba_0.7Sr_0.3)TiO₃ (BST) thin films (from 0 to 20 mol%) have been prepared on Pt/Ti/SiO₂/Si (100) substrates by sol–gel technique. The structural and dielectric properties of BST thin films were investigated as a function of Ca dopant concentration. The results showed that the microstructure and dielectric properties of the BST films were strongly dependent on the Ca contents. With the Ca dopant concentration increasing, the grain size, dielectric constant and dielectric loss of the BST thin films decreased. As the content of Ca dopant reaches 10 mol%, the dielectric constant, dielectric loss, tunability, the value of FOM and the leakage current density are 281, 0.0136, 16.7%, 12.3 and 5.5?×?10^?6 A/cm², respectively.     

Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films

This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al₂O₃). Various AZO films on glass were prepared by changing the H₂/(Ar?+?H₂) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H₂ flow ratio, respectively. As a result, the AZO/H films grown with 2% H₂ addition showed excellent electrical properties with a resistivity of 4.98?×?10⁴ Ωcm. The UV-measurements showed that the optical transmission of the AZO/H films was >85% in the visible range with a wide optical band gap. In addition, the effect of H₂ flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied.     

Electrical and optical properties of fluorine-doped tin oxide (SnOx:F) thin films deposited on PET by using ECR–MOCVD

The electrical, optical, structural and chemical bonding properties of fluorine-doped tin oxide (SnO_x:F) films deposited on a plastic substrate prepared by Electron Cyclotron Resonance–Metal Organic Chemical Vapor Deposition (ECR–MOCVD) were investigated with special attention to the process parameters such as the H₂/TMT mole ratio, deposition time and amount of fluorine-doping. The four point probe method, UV visible spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic emission spectroscopy (AES), X-Ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were employed to characterize the films. Based on our experimental results, the characteristics of the SnO_x:F thin films were significantly affected by the process parameters mentioned above. The amount of fluorine doping was found to be one of the major parameters affecting the surface resistivity, however its excess doping into SnO₂ lead to a sharp increase in the surface resistivity. The average transmittance decreased with increasing film thickness. The lowest electrical resistivity of 5.0?×?10^?3 Ω^.cm and highest optical transmittance of 90% in the visible wavelength range from 380 to700 nm were observed at an H₂/TMT mole ratio of 1.25, fluorine-doping amount of 1.3 wt.%, and deposition time of 30 min. From the XRD analysis, we found that the SnO_x:F films were oriented along the (2 1 1) plane with a tetragonal and polycrystalline structure having the lattice constants, a?=?0.4749 and c?=?0.3198 nm.     

Effects of the sol concentration on the texture of Pb0.3Sr0.7TiO3 thin films derived by sol–gel method

Pb_0.3Sr_0.7TiO₃ (PST) thin films were deposited on Pt coated Si (100) substrates by sol–gel techniques using a series of different sol concentrations (0.15, 0.20, 0.25, 0.30, and 0.40 M). Both structural and dielectric characteristics of PST films as a function of the sol concentration were investigated. PST thin films reveal typical crystalline structure with columnar texture when the sol concentration is lower than 0.30 M. With the concentration increasing up to 0.30 M, the columnar-grained structures can not be obtained. Among all the PST thin films, the thin film derived with 0.25 M sol has better dielectric characteristics. The dielectric constant, dielectric loss, tunability and FOM are 329, 0.011, 58.0% and 52.8, respectively.     

Photoluminescence and optical dispersion parameters of N-doped ZnO nano-fiber thin films

N-doped ZnO (NZO) nanocrystalline thin films were successfully synthesized via sol–gel method. The structural and optical properties of the films were characterized by various techniques including X-ray diffraction, atomic force microscopy (AFM), UV–vis absorption and photoluminescence. The UV–vis absorption edge was changed with increasing N-doping concentration. X-ray diffraction (XRD) results clearly showed that the zinc oxide doped with nitrogen (5 to 20 wt.%) were identified with phases of hexagonal ZnO and N-doped ZnO nanocrystalline thin films. The refractive index dispersion mechanism obeys the Single oscillator model. The dispersion parameters E _o and E _d of the thin films were determined. The dispersion parameters were changed by N dopant. It is evaluated that the structural, optical constants, photoluminescence properties of Zinc oxide film can be controlled by N dopants.     

Dielectric characteristics investigation of (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 ferroelectric thin films

By the radio frequency (RF) magnetron sputtering methods, (Ba_0.7Sr_0.3)(Ti_0.9Zr_0.1)O₃ (BSTZ) ferroelectric thin films were deposited on the Pt/Ti/SiO₂/Si(100) substrates. The crystal structural and microstructure of these thin films were analyzed by means of the XRD, SEM, and AFM. Moreover, the dielectric characteristics were also investigated by the C-V and J-E analyses. The optimal deposition parameters for these BSTZ thin films were: RF power is 160 W, oxygen concentration is 25%, substrate temperature is 580°C, and chamber pressure is 0.075 mPa. Under these optimal deposition conditions, the (111) and (110) oriented polycrystalline of the BSTZ thin films grow easily. And under a bias voltage of 0.5 MV/cm, the dielectric constant and leakage current density of the BSTZ thin films are 191 and 3×10^?8 A/cm², respectively. In addition, under various measured temperatures (0 ～ 80°C) and frequencies (100 kHz ～ 1 MHz), all the dielectric constants remain almost unchanged. Compared to BSTZ thin films reported previously, in this study, the deposited thin films have the advantage of lower leakage current and hence are suitable for the applications of dynamic random access memory.     

Effect of Deposition Temperature on the Electrochromic Properties of Electron Beam-Evaporated WO3 Thin Films

Tungsten oxide (WO₃) thin films were deposited on ITO/glass substrates using the electron beam evaporation technique. The WO₃ films were grown on substrates at temperatures varying from room temperature (RT) to 240 °C. The structural characterization and surface morphology were examined using X-ray diffraction (XRD) and a field emission scanning electron microscope (FE-SEM). The electrochromic properties of WO₃ thin films were investigated using cyclic voltammograms (CVs) and in situ transmittance measurements, which were performed on WO₃ thin films immersed in an electrolyte of 1 M LiClO₄ in propylene carbonate (PC). An amorphous 510-nm-thick WO₃ film heated at RT exhibits the maximum transmittance variation (ΔT%) of 61.8% between the bleached state and the colored state, with a ΔOD of 0.739, Q of 17.31 mC/cm² and η of 42.69 cm²/C at a wavelength (λ) of 550 nm.     

Physical properties of transparent conducting indium doped zinc oxide thin films deposited by pulsed DC magnetron sputtering

Transparent conducting In-doped (1at.%) zinc oxide (IZO) thin films are deposited on glass substrate by bipolar pulsed DC magnetron sputtering. We have investigated the effect of pulse frequency on the physical properties of the IZO films. A highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. At optimal deposition conditions, IZO films with a smoothest surface roughness of ～3.6 nm, a low-resistivity of 5.8?×?10^?3 Ωcm, and a high mobility of 14 cm/Vs were achieved. The optical spectra showed a high transmittance of above 85% in the UV–visible region and exhibited the absorption edge of near 350 nm. In micro-Raman, we observed the three phonon modes of host ZnO, which are E ₂ ^low, E ₂ ^high, and A ₁ modes, and the three additional modes. The origin of three additional modes is attributed to the host lattice defect due to the effect of In dopant and increasing the pulse frequency.     

Characteristics of ZnO thin film for film bulk acoustic-wave resonators

Highly c-axis-oriented zinc oxide (ZnO) thin films were deposited on Au electrodes by reactive radio frequency (RF) magnetron sputtering and their sputtering pressure on thin film bulk acoustic-wave resonator (FBAR) characteristics are presented. The evolution of the preferred orientation and the surface morphologies of the deposited ZnO films are investigated using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurement techniques. The result obtained in this study show that the ZnO films prepared using a lower sputtering pressure of 2?×?10^?3 Torr have a strong c-axis orientation, promote smoother surface and higher resonance frequency. The experimental results demonstrate that the fabricated two-port FBAR using the optimum process parameters yields an effective electromechanical coupling constant ( $ k^{2}_{{{\text{eff}}}} $ ) of 2.8%, series quality factor (Q _s) of 436, and a parallel quality factor (Q _p) of 600.     

Low-temperature synthesis of barium titanate thin films by nanoparticles electrophoretic deposition

The nanoparticles electrophoretic deposition (EPD) of barium titanate (BaTiO₃ or BTO) thin films was investigated. BTO nanocrystallites in a pseudocubic perovskite phase with an average particle size of about 10 nm were synthesized at a low temperature of 90°C by a high-concentration sol–gel process. By using a mixed solvent of 2-methoxyethanol and acetylacetone as dispersing medium, transparent and well-dispersed BTO nanocrystallites suspensions within the concentration range of 0.0125 to 0.20 mol/l was successfully prepared for nanoparticles EPD. A uniform microstructure and a smooth surface were observed on the deposited films. The film thickness of the deposited films increased rapidly with increasing EPD time in the initial period of EPD, and thereafter gradually increased to a limited thickness. With increasing applied EPD voltage, the limited film thickness increased. A near linear relation between the film thickness of films and the concentration of suspensions was observed under the same EPD conditions. The microstructures of the deposited BTO thin films were investigated.     

Electrical and optical studies of transparent conducting ZnO:Al thin films by magnetron dc sputtering

Transparent conducting aluminium-doped Zinc oxide (ZnO:Al) films have been deposited on glass substrates by magnetron dc sputtering using a ceramic target (ZnO with 2 wt% Al₂O₃). The dependence of the electrical and optical properties of these films on substrate temperature, sputtering pressure of Ar and location of substrates were investigated in detail. Target is perpendicular with substrate and we controlled the distance ‘x’ of target and substrate. Optimized films with resistivity of 3.7?×?10^?4 Ω cm, an average transmission in the visible range (300–800 nm) of greater than 85% and the reflectance in the infrared range being greater than 85% have been formed. Substrate temperature, distance ‘x’, and working pressure are optimized for lower resistivity and high concentration of carriers.