共查询到19条相似文献,搜索用时 212 毫秒
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基于单个光纤光栅反射技术的高性能L波段EDFA 总被引:1,自引:1,他引:0
基于单个光纤光栅反射技术提出一种高性能L波段EDFA。用一个光纤布拉格光栅(FBG)反射EDFA产生的一部分C波段放大自发辐射(ASE)噪声,该部分ASE噪声被重新注入到掺铒光纤中以提高增益效率。用静态均衡器平坦输出的增益谱,在L波段范围内,增益被箝制在25.5dB,增益不平坦度小于0.5dB,噪声指数小于5.5dB,为DWDM系统提供了一项有效的解决方案。 相似文献
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两段级联宽带碲基掺铒光纤放大器特性研究 总被引:2,自引:2,他引:0
利用四能级结构速率方程组和光功率传输方程组,研究了在碲基掺铒光纤(EDTF)中内插一个光隔离器、形成两段级联的碲基掺铒光纤放大器(EDTFA)后对EDTFA性能的改善.结果表明,在给定泵浦方式、泵浦功率、纤芯掺杂浓度和输入信号功率条件下,两段级联EDTFA可以有效的抑制光纤中反向传输放大自发辐射(ASE)噪声,降低反转粒子数的消耗,从而提高信号增益、输出功率,并且降低了噪声系数.对不同光纤长度和光隔离器内插在光纤中不同位置的研究表明,当光纤为最佳长度和光隔离器在最佳位置处时,可使短波长信号增益增加10 dB,噪声系数减小1 dB,并进一步增加了放大带宽以及功率转换效率. 相似文献
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根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50 nm(1485-1535 nm)带宽内,增益平坦度达到±0.6dB以内.由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49 nm(1490-1539 nm)带宽内,增益平坦度达到0.5 dB, 55 nm(1485-1540 nm)带宽内,增益平坦度达到1 dB.这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义. 相似文献
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级连L波段EDFA优化的数值模拟与实验 总被引:1,自引:1,他引:0
对级连结构的L波段EDFA进行了优化设计.首先用加拿大Optiwave的OptiAmplifier4.0数值模拟了在其他条件确定情况下两级光纤长度比例变化对放大器性能的影响,在优化光纤长度比例的基础上,为了得到更宽的L-EDFA的本征平坦增益谱,进一步优化了前后级泵浦功率.在上述条件下利用42 m的铒纤得到实验结果为:ASE谱3 dB带宽1566.84~1606.80 nm(40 nm).在L波段(1570~1605 nm),小信号平均增益约为25 dB,增益不平坦度为±1 dB,噪声指数约为5 dB. 相似文献
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用于S波段光纤拉曼放大器增益平坦的长周期光纤光栅设计 总被引:1,自引:0,他引:1
根据实际所测得的S波段光纤拉曼放大器的信号增益谱,通过对长周期光纤光栅具体参数的选定,由两个长周期光纤光栅级联滤波的组合,可以使增益图谱在50nm(1485~1535nm)带宽内,增益平坦度达到士0.6dB以内.由三个长周期光纤光栅级联滤波组合,可以使增益图谱在49nm(1490~1539nm)带宽内,增益平坦度达到0.5dB,55nm(1485~1540nm)带宽内,增益平坦度达到1dB.这对扩大长周期光纤光栅增益平坦滤波器的运用范围,扩大单泵浦S波段光纤拉曼放大器的有效增益带宽有着积极的意义. 相似文献
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Mori A. Sakamoto T. Kobayashi K. Shikano K. Oikawa K. Hoshino K. Kanamori T. Ohishi Y. Shimizu M. 《Lightwave Technology, Journal of》2002,20(5):822-827
This paper describes the development of a 1.58-/spl mu/m broad-band and gain-flattened erbium-doped tellurite fiber amplifier (EDTFA). First, we compare the spectroscopic properties of various glasses including the stimulated emission cross sections of the Er/sup 3+4/ I/sub 13/2/ /sup 4/I/sub 15/2/ transition and the signal excited-state absorption (ESA) cross sections of the Er/sup 3+4/ I/sub 13/2/ - /sup 4/I/sub 9/2/ transition. We detail the amplification characteristics of a 1.58-/spl mu/m-band EDTFA designed for wavelength-division-multiplexing applications by comparing it with a 1.58-/spl mu/m-band erbium-doped silica fiber amplifier. Furthermore, we describe the 1.58-/spl mu/m-band gain-flattened EDTFA we developed using a fiber-Bragg-grating-type gain equalizer. We achieved a gain of 25.3 dB and a noise figure of less than 6 dB with a slight gain excursion of 0.6 dB over a wide wavelength range of 1561-1611 nm. The total output power of the EDTFA module was 20.4 dBm and its power conversion efficiency reached 32.8%. 相似文献
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Mori A. Sakamoto T. Shikano K. Kobayashi K. Hoshino K. Shimizu M. 《Electronics letters》2000,36(7):621-622
A gain-flattened Er3+-doped tellurite fibre amplifier (EDTFA) with an expanded L-band is presented. The amplifier has an average gain of 28 dB and a noise figure of <6 dB with a slight gain excursion of 1 dB over a wide wavelength range of 1581-1616 nm. The total output power of the EDTFA module was 20.5 dBm and its power conversion efficiency reached 25% 相似文献
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M. Yamada H. Ono T. Kanamori T. Sakamoto Y. Ohishi S. Sudo 《Photonics Technology Letters, IEEE》1996,8(5):620-622
We propose a novel low noise and gain-flattened Er/sup 3+/-doped fiber amplifier (EDFA) with a cascade configuration for wavelength division multiplexing (WDM) signals. In this configuration, a 1480-nm pumped fluoride-based EDFA is joined to a 980-nm pumped silica-based EDFA through an optical isolator. By adjusting the silica-based Er/sup 3+/-doped fiber length in the silica-based EDFA, we realized an excellent flat gain EDFA with a gain excursion of less than 0.9 dB and noise figure of 5.7/spl plusmn/0.2 dB, and a low noise EDFA with a noise figure of 5/spl plusmn/0.2 dB and a gain excursion of less than 1.4 dB, for 8 channel WDM signal in the 1532-1560-nm wavelength region. 相似文献
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The amplification characteristics of an Er/sup 3+/-doped tellurite-based fibre amplifier (EDTFA) with 980 nm band pumping are described. The optimum pump wavelength and length of the newly developed EDTF are investigated in order to obtain both a low noise figure and a high gain simultaneously. We realise a low noise figure of less than 4.5 dB with a pump wavelength of 976.5 nm and a 0.4 m EDTF. 相似文献
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M. Yamada T. Kanamori Y. Terunuma K. Oikawa M. Shimizu S. Sudo K. Sagawa 《Photonics Technology Letters, IEEE》1996,8(7):882-884
We successfully developed a fluoride-based Er/sup 3+/-doped fiber amplifier (F-EDFA). An average signal gain of 26 dB was achieved for 8 channel wavelength division multiplexed (WDM) signals in the 1532-1560 nm wavelength region with a gain excursion of less than 1.5 dB at an input signal power of -20 dBm per channel. Furthermore, we studied the amplification characteristics of the F-EDFA for WDM signals. The following experimental results were obtained. (1) For an 8-channel WDM signal in the 1532 to 1560 nm wavelength region, the gain excursion between channels can be suppressed to within 1.5 dB. However, the wavelength region allowing a gain excursion of 1.5 dB, is between 1536-1560 nm for the silica-based Er/sup 3+/-doped fiber amplifier. (2) F-EDFAs have a flat gain region between 1534-1542 nm. The gain excursion of this region is less than 0.2 dB for WDM signals. 相似文献
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H. Ono M. Yamada Y. Ohishi 《Photonics Technology Letters, IEEE》1997,9(5):596-598
A gain-flattened Er/sup 3+/-doped silica-based fiber amplifier (EDFA) has been constructed for a 1.58-/spl mu/m band WDM signal. This EDFA exhibits uniform amplification characteristics with a gain excursion of 0.9 dB for a four-channel WDM signal in the 1.57-1.60 /spl mu/m wavelength region. The average signal gain and the noise figure for the WDM signal are 29.5 dB and less than 6.3 dB, respectively. The use of this EDFA in parallel with a 1.55-/spl mu/m band EDFA will expand the WDM transmission wavelength region. 相似文献
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Metze G.M. Cornfeld A. Carlson E. Dahrooge G. Chang E. Singer J. Bass J. Hung H.-L. Lee T. 《Electron Device Letters, IEEE》1989,10(4):165-167
The development of V -band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35-μm×60-μm gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain 相似文献
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M.R.X. de Barros G. Nykolak D.J. DiGiovanni A. Bruce W.H. Grodkiewicz P.C. Becker 《Photonics Technology Letters, IEEE》1996,8(6):761-763
We report the gain, noise figure, output saturation power, and conversion efficiency of a highly concentrated Er/sup 3+/-doped alumino silicate fiber amplifier. We obtain a gain per unit length of 1.0 dB/cm, which corresponds to the highest gain per unit length obtained in an Er/sup 3+/-doped fiber amplifier. The pump power threshold ranges from 2 to 5 mW, depending on the fiber length. 相似文献
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A novel method of enhancing gain in the long wavelength band erbium-doped fiber amplifier is described using the unwanted amplified spontaneous emission (ASE) self-pumping technique. A dual-stage amplifier is deployed, where the unwanted backward ASE from the first stage is fully utilized to pump the second stage amplifier. Gain improvement is observed that enables support for higher channel capacities in wavelength-division-multiplexed systems with negligible noise figure penalties. Flat-gain values in excess of 24 dB and noise figures <5 dB are obtained from the proposed amplifier with a higher channel counts compared to the conventional amplifier 相似文献