溶胶-凝胶法制备ITO透明导电薄膜的研究进展

ITO透明导电薄膜以其优良的透明导电性能在平面液晶显示(LCD)、电致发光(EC)等多个领域得到了广泛的应用.制备ITO薄膜的方法很多,其中采用溶胶-凝胶法制备ITO透明导电薄膜具有成本低,设备简单,工艺可控,有利于大面积成膜等优点,因而受到了广泛的关注.较详尽地介绍了ITO薄膜的透明导电机理、溶胶-凝胶法的工艺特征,并初步论述了溶胶-凝胶法制备ITO透明导电薄膜的应用和发展前景.     

ITO透明导电薄膜的制备方法及研究进展

概述了透明导电薄膜的分类及ITO薄膜的基本性质,综述了用于制备ITO薄膜的磁控溅射法、真空蒸发法、溶胶-凝胶法、喷雾热解法、化学气相沉积法,论述了不同制备方法的优缺点。最后,介绍了ITO薄膜的应用现状,并对ITO薄膜的发展趋势进行了展望。     

FTO/ITO复层导电薄膜的研究

采用溶胶凝胶法与溶液水解法分别制备ITO、FTO以及FTO/ITO复层导电膜,利用分光光度仪测量在可见光范围内的透光率,用四探针法精确测量薄膜的电阻率,通过扫描电镜观测薄膜的表面形态,微观颗粒形貌以及薄膜的厚度。实验表明,用SnCl4.5H2OI、n(NO3)3.4.5H2O、NH4F作为主要原料,通过溶胶凝胶法和溶液水解法可制备出低电阻率,高透光性的FTO/ITO复合导电薄膜。     

ITO透明导电膜的湿法制备与性能研究

以聚乙烯基吡咯烷酮为分散剂制备了氧化铟锡(ITO)溶胶,通过涂布的方式将其制备成ITO透明导电膜,考察了不同热处理温度及表面粗糙度对ITO薄膜性能的影响。结果表明:ITO溶胶颗粒粒度分布较窄,分散性好;随着热处理温度的升高,ITO薄膜的导电性和透光性均逐渐增强;相同热处理温度下,薄膜表面粗糙度越低越有利于获得低电阻率、高透光率的ITO薄膜。     

ITO薄膜的半导化机理、用途和制备方法

综述了ITO薄膜的半导化机理、应用和制备工艺。ITO薄膜的半导化机制是高价Sn~(4+)替代部分In~(3+)和氧缺位。ITO薄膜主要用于光电器件中,例如用于液晶显示。综述了磁控溅射、CVD、喷雾热分解和溶胶-凝胶四种制膜工艺。     

CZTSSe薄膜的直接溶液涂膜制备方法研究进展

直接溶液涂膜法制备铜锌锡硫硒(CZTSSe)薄膜具有元素配比易于控制、高材料利用率以及易于大面积制备等潜在优点,是一种极具应用前景的非真空制备方法。综述了铜锌锡硫硒薄膜直接溶液涂膜法的特点,从形貌、杂质残留以及物相等方面回顾了近年来浆料法、溶胶-凝胶法、有机溶液法以及联氨溶液法的薄膜制备现状,分析了不同溶液体系的各自反应机制,讨论了溶液体系对薄膜制备的影响。对于浆料法,由于是通过纳米颗粒原料高温烧结制备薄膜,存在着致密性和晶粒尺寸难以改善以及杂相难以抑制等问题;溶胶-凝胶法和有机溶液法所使用的有机物会妨碍物相转化并导致杂质残留。     

ZnO半导体薄膜的研究进展

介绍了制备氧化锌薄膜的几种主要方法,包括磁控溅射法、化学气相沉积法、溶胶-凝胶法、激光脉冲沉积法等;分析了氧化锌薄膜作为代替透明导电膜(ITO膜)的可行性及这方面的研究进展;阐述了氧化锌薄膜作为一种新的场发射阴极材料应用于平板显示或作为场发射电子源的研究进展,同时综述了其作为发光器件的众多优势.     

溶胶-凝胶法制备纳米薄膜的研究进展

溶胶-凝胶法是制备纳米薄膜的常用方法.综述了溶胶-凝胶法制备纳米薄膜的原理与特点及其最新研究进展,最后指出了溶胶-凝胶法制备纳米薄膜今后急需解决的问题.     

Sol-Gel法制备PLZT系铁电薄膜

介绍了Sol-Gel法，并对近年来Sol-Gel法制备PLZT系铁电薄膜材料的有关研究进行了分析和总结，详细介绍了Sol-Gel法制备PLZT系铁电薄膜材料的各种原料及工艺流程。     

改进溶胶-凝胶法制备纳米TiO_2薄膜及其光催化制氢性能

以钛酸丁酯为原料,采用改进的溶胶-凝胶法制备ITO负载纳米TiO2薄膜,通过XRD、SEM和UV-Vis等检测方法对薄膜样品进行表征,并考察其在双室光电化学池中制氢反应的光催化活性。结果表明:纳米TiO2薄膜为锐钛矿-金红石混晶结构,当溶胶中P25粉末含量为0.09g/mL时制备的TiO2薄膜产氢量最大,光催化性能较好。     

Sol-Gel法制备PZT铁电薄膜新进展

从底电极的选择、过渡层的引入、外延膜的生长、取代阳离子的改性四个方面介绍了Sol-Gel法制备PZT铁电薄膜的研究进展,简述了PZT的Sol-Gel机理研究现状和引起PZT铁电薄膜极化疲劳的原因,分析了Sol-Gel法制备PZT铁电薄膜研究中存在的问题,并提出展望。     

溶胶－凝胶工艺参数对（Pb，La）TiO_3薄膜结构的影响

系统地研究了溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）方法制备（Ｐｂ_（１－Ｘ）Ｌａ_ｘ）Ｔｉ_（１－ｘ／４）Ｏ_３（简称ＰＬＴ）薄膜时催化剂（或ｐＨ值）、溶液浓度在室温下对形成溶胶和凝胶的影响规律，用Ｘ射线结构分析和ＳＥＭ研究了热处理工艺对薄膜结构及晶粒尺寸的影响。实验表明，浓度、醋酸含量都存在一个最佳的范围，且随铜（Ｌａ）含量的增加，该范围减小；实验还发现，随着Ｌａ含量的增加，薄膜的晶化温度降低。在单晶（１００）Ｓｉ衬底上成功地制备出了具有钙钛矿型结构、厚度约为２００ｎｍ、均匀、致密、无裂纹的ＰＬＴ晶态薄膜。     

Effect of annealing temperature on structural,optical and humidity sensing properties of indium tin oxide (ITO) thin films

Tin doped indium oxide (ITO) thin films were prepared by sol–gel spin coating method with In (NO₃)·3H₂O and SnCl₄·5H₂O as indium and tin sources, respectively. The as deposited samples were annealed at various temperature such as, 300, 400, 500 and 600?°C for 2 h in ambient atmosphere. The grown ITO thin films are polycrystalline in nature with cubic structure of In₂O₃ with the space group La3 and the results are in good agreement with the standard JCPDS data (card no#06-0416). In addition crystalline size increases with increasing annealing temperature from 25 to 55 nm. Polycrystalline with uniform smooth surface was observed by SEM micrographs. The optical band gap energy was found to be decreased from 3.85 to 3.23 eV as the annealing temperature is increased from 300 to 600?°C. The humidity sensing performance (high sensitivity and fast response time) was significantly improved for 600?°C thin films samples, which is probably due to smaller energy band gap and physisorption between the water molecules and the surface of the thin films. The films were further characterized by PL and EDS analysis. The effect of temperature on humidity sensing mechanism of ITO thin films is also discussed.     

Effects of transition metal (Cu,Zn, Mn) doped on leakage current and ferroelectric properties of BiFeO<Subscript>3</Subscript> thin films

BiFeO₃ (BFO) and transition metal (Cu, Zn, Mn) doped BFO thin films were successfully fabricated on indium tin oxide (ITO)/glass substrate using sol–gel process, spin coating and layer by layer technique. Compared to the pure BFO thin film, improved ferroelectric and leakage current properties were observed in the transition metal doped BFO thin films. The transition metal (Cu, Zn, Mn) doped BFO thin films have varying degrees of lower leakage current compared with the pure BFO film. The substitution of Cu and Zn increase the remnant polarization of BFO thin films. The values of remnant polarization (2Pr) were 120.6 and 126.7 μC/cm² at 933 kV/cm for Cu-doped and Zn-doped BFO thin film, respectively.     

Influence of Fe doping on the photocatalytic dye degradation and H2 evolution properties of BiVO4 thin films under visible-light irradiation

Journal of Materials Science: Materials in Electronics - The spotlight of this research is premiering of Sol–Gel dip-coating technique in fabricating the nanorod-shaped BiVO4 with thin films...     

A comparative study of dip coating and spray pyrolysis methods for synthesizing ITO nanolayers by using Ag colloidal sol

Indium tin oxide (ITO) films were deposited on glass substrates by dip-coating and thermal pyrolysis methods. Sn (IV) is often used in the spray method as a precursor salt, but in this research we have employed a new procedure that uses Sn (II) and In(NO₃)₃ for preparation of transparent conductive thin films. Then, colloidal Ag was deposited on the ITO layers in order to compare the two synthesis methods, and the structural and electrical properties of the resultant films were investigated by FESEM, XRD, and four-terminal resistometry. The obtained films are polycrystalline with a preferred orientation of (200). The XRD patterns of the films indicate that in both films, the Sn phase is crystallized separately from In₂O₃. The presence of a Sn peak and the overall low intensity of XRD peaks suggest relative crystallization of ITO structure. For this reason, Ag films were deposited by dip coating method using a colloidal sol. By analyzing the XRD patterns of Ag-ITO films after eliminating the Sn peak, the increased intensity of the peaks confirmed the relatively good crystallization of the ITO films. The results show that the films with a sheet resistance as low as 2 × 10^?2 Ω·cm, which is beneficial for solar cells, were achieved.     

Sol-Gel工艺Si基Bi4 Ti3 O12铁电薄膜制备与晶相结构研究

采用Sol-Gel工艺制备了Si基Bi4TiO12铁电薄膜.研究了退火温度、退火时间、薄膜厚度等对薄膜晶相结构的影响.研究表明,退火温度对Si基Bi4Ti3O12铁电薄膜晶相结构的影响最为显著,而且随退火温度升高,Bi4Ti3O12薄膜更趋向于沿c-轴取向的生长;退火时间在30分钟内对薄膜晶相结构的影响比较明显;薄膜厚度及30分钟以上的退火处理对薄膜晶相结构的影响不大.     

微波辐射溶胶-凝胶法制备TiO2薄膜及其降解铬黑T的活性

通过微波辐射溶胶一凝胶法（sol-gel）法在导电玻璃（ITO）基体上制备TiO2纳米薄膜光催化剂，考察不同加热方式、微波时间、酸处理、薄膜层数等对TiO2纳米粒子及薄膜的影响。以可见光谱（UV-VIS）、X射线衍射（XRD）对TiO2薄膜进行了表征，并通过薄膜光催化降解铬黑T溶液的性能进行了研究。实验表明，ITO玻璃表面的TiO2纳米薄膜经HNO3和微波处理后，因协同效应使薄膜的光催化活性大大增强。     

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl₃, SnCl₄ and NH₃ solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ~ 40-1160 nm. After calcination at 550 °C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.     

高透明低方阻ITO—Ag—ITO柔性镀膜技术

高透明低方阻ITO－Ag-ITO柔性薄膜具有广泛的用途，本文介绍了膜系设计，工艺参及控制，对设备结构也做了简要叙述，测试结果表明，ITO－Ag-ITO多层膜采用连续卷绕镀的方法生产，性能优异，工艺稳定，系统可靠。