基于正交调制PolSK/Inverse-RZ的光标记技术

光标记技术是一种实现光分组交换的重要技术.文章提出并用实验验证了一种基于正交调制PolSK/Inverse-RZ的新型光标记方案,该方案用Inverse-RZ作载荷信号,用PolSK作标记信号.由于Inverse-RZ信号在比特"1"和比特"0"时都具有光功率,在PolSK信号检测时信息一直保持着,因此通常使用ASK信号标记的技术在消光比方面的限制被解决了.     

100Gbit/s DP-QPSK调制光星座图测试及分析

由于调制光信号质量的好坏影响到传输和接收信号质量的好坏,因此对100Gbit/s系统中的数字光信号的测量与分析十分重要。文章对100Gbit/s transponder中调制光信号的生成原理进行了分析,对数字光信号测试中的OSNR(光信噪比)、EVM(误差矢量幅值)和星座图等几个参数进行了必要的理论探讨。同时也分析了各种QPSK(四相相移键控)信号星座图的图形,为使用调制器分析问题提供了有效参考。     

GaAs/AlGaAs多量子阱FET-SEED灵巧象元

将GaAs／AlGaAs多量子阱光探测器、光调制器与GaAs场效应晶体管（FET）混合集成,构成FET-SEED灵巧象元。光探测器和光调制器均为反射型自电光效应器件（SEED）,光源为骨子阱半导体激光器。测出的光输出Pout／光输入Pin特性表明,光输入信号对光输出信号有明显的调制作用,光输入信号较小的变化可以导致光输出信号较大的变化。     

MoS2/WSe2-PVA薄膜热光全光调制器(特邀)

全光调制器在全光信号处理和通信等全光应用中起着重要的作用。主要研究了基于MoS2-PVA薄膜实现的全光调制器。此外,也验证了WSe2-PVA薄膜也可实现全光调制。该器件利用热光效应,结合偏振干涉实现了全光调制,得到了长时间稳定输出的调制信号。将980 nm的脉冲信号作为控制光,MoS2或WSe2吸收光产生热量,使薄膜的折射率发生改变,从而改变1 550 nm信号光的偏振态,实现980 nm控制光对1 550 nm光的调制。得到的MoS2-PVA薄膜全光调制器的上升沿时间为526 s。     

Er/Yb共掺双包层光纤放大器的自激振荡

基于自行设计并搭建的Er/Yb共掺双包层光纤放大器,实验研究了自激振荡与抽运光和信号光功率之间的关系。结果表明:随着抽运光功率的增大,自激振荡也逐渐加强,并趋于饱和;在抽运光一定的情况下,增加入射信号光功率可以有效抑制放大器的自激振荡;当端面缺陷引起的光反射不可避免时,可以通过调整信号光或抽运光功率使其匹配来消除自激振荡,优化系统性能。     

双通道全光NRZ/RZ格式转换器设计

提出了一种双通道全光非归零码/归零码调制格式转换的方案.该方案中,非归零码信号与同步的时钟抽取光共同注入到高性能非线性光纤中,由高性能非线性光纤构成的参量放大器把非归零码信号转换为归零码信号,同时不改变信号光的波长.实验论证了10Gb/s非归零码双通道的码型转换器.转换后的归零码信号的光信噪比略低于输入光信噪比,其脉冲...     

利用TOAD实现10 Gbit/s全光非归零码到归零码的转换

利用从非归零（NRZ）信号中全光提取的时钟，采用太赫兹光非对称解复用器（TOAD）实现了10 Gbit／s非归零码到归零（RZ）码的码型转换。非归零信号采用半导体光放大器（SOA）进行时钟分量增强并用平面波导阵列（AWG）滤出相应的伪归零（PRZ）信号，然后采用半导体光放大器注入锁模光纤环形激光器进行时钟提取，提取的时钟信号和待转换的非归零信号分别作为抽运光和探测光输入太赫兹光非对称解复用器，在其中进行码型转换。转换后输出的归零信号的质量仅由恢复的时钟信号和非归零信号的质量决定，受太赫兹光非对称解复用器中半导体光放大器增益恢复时间的影响极小。实验测得转换后的归零信号消光比为8．7dB，码型效应非常低，其光谱明显展宽．并且出现谱间隔为0．08nm的多峰结构，与10 Gbit／s的比特速率相对应。该方法对时钟信号的码型效应有一定的容忍度。     

基于10Gb/s光接收器信号丢失的探测

10Gb／s XFP光模块系统数字诊断功能需要进行信号丢失（LOS）监控。通过监控光功率是否过低，可探测到导致误码率劣化的系统故障。本文以MAX3991进行信号丢失探测，用限幅放大器的IC时钟和数据恢复电路对XFP模块的10Gb／s接收器进行了优化。该器件的精密LOS探测器嘘控跨阻放大器（TIA）输出信号幅度，输出信号幅度与TIA线性范围内的接收光功率峰-峰值（即光调制幅度OMA）成正比。     

4×10Gbit/s 光时分复用信号的实验研究

利用1×4光纤耦合器制成了4×10Gbit/s的光时分复用器,并对由该光时分复用器产生的40Gbit/s光信号进行了实验研究,分析了造成复用信号幅度随机波动的原因及改进方法.实验表明,改进后的40Gbit/s光信号波动很小,已经达到OTDM系统要求.     

基于IQ/CD的单光子载波矢量信号传输系统设计

提出并验证了一种使用单光子载波、基于 IQ 调制和相干检测的新方法来传输两个矢量信号,单光子载波上的同一个偏振态光携带 IQ 调制信号,具有正交偏振状态的光载波直接通过光波调制光波传输,两个正交极化波的光发送到相干检测器中解调。仿真实验了在25 km 单模光纤两个 QPSK 信号以数据率为1 Gbps 传输时的传输性能。     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For 1-/spl mu/m gate-length devices, a minimum noise figure (NF/sub min/) of 0.7 dB and an associated gain (G/sub a/) of 19 dB were observed at 1 GHz, and an (NF/sub mi/) of 3.3 dB and a G/sub a/ of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented.