锰锑酸铅-锌铌酸铅-锆钛酸铅陶瓷的铁电性能

通过电滞回线测试,探讨了xPb(Mn1/3Sb2/3)0.05(Zr1/2Ti1/2)0.95O3(1-x)Pb(Zn1/3Nb2/3)0.28(Zr1/2Ti1/2)0.72O3[xPMnS-(1-x)PZN]陶瓷的铁电性能及铁电相变特性.同时研究了Ba2 取代Pb2 对材料铁电性能的影响.结果表明;三方相含量较高的0.2PMnS-0.8PZN陶瓷具有较高的矫顽场和较大的剩余极化强度;四方相含量较高的0.5PMnS-0.5PZN和0.6PMnS-0.4PZN陶瓷具有较低的矫顽场和较小的剩余极化强度,Ba2 取代使三方相含量增加,铁电性能明显提高.     

铌镁酸钡缓冲层对锆钛酸铅薄膜漏电流的抑制

将铌镁酸钡(Ba(Mg1/3Nb2/3)O3,BMN)作为缓冲层,通过溶胶-凝胶法制备了锆钛酸铅(Pb(Zr0.52Ti0.48)O3,PZT)铁电薄膜.探究BMN缓冲层对PZT铁电薄膜介电、铁电性能影响.研究发现:BMN缓冲层不仅可以改善PZT薄膜晶化生长,同时阻碍了PZT与Pt的互扩散而降低了漏电流.由于对漏电流的抑制作用,适当厚度BMN缓冲层的引入可改善PZT的铁电性能,但随着缓冲层厚度的增加,由于其分压作用,复合膜铁电性减弱.当厚度为10 nm时,薄膜的综合性能最好:介电常数εr=1612.03,介电损耗tanδ=0.024,剩余极化值Pr=31.65 μC/cm2,矫顽场Ec=71.5 kV/cm,漏电流密度J=4.4×10-6 A/cm2.     

钽镁酸钡缓冲层对锆钛酸铅铁电薄膜性能的影响

采用溶胶–凝胶工艺在Pt/Ti/Si O2/Si基片上,通过引入钽镁酸钡[Ba(Mg1/3Ta2/3)O3,BMT]缓冲层,制备了锆钛酸铅[Pb(Zr0.52Ti0.48)O3,PZT]铁电薄膜。研究了BMT缓冲层对PZT铁电薄膜结晶和性能的影响。结果表明:引入BMT缓冲层利于PZT薄膜的生长;PZT薄膜具有钙钛矿结构,且没有裂纹、结晶良好、致密性好;缓冲层的厚度对PZT铁电薄膜的微观结构和铁电性能有重要影响。随BMT缓冲层厚度增加,PZT晶粒增大,介电损耗tanδ逐渐减少,介电常数εr和剩余极化强度Pr先增大后减少,矫顽场Ec先减少后增大。当BMT缓冲层厚约为10 nm时,PZT薄膜具有最优的铁电性能:εr=1 850,Pr=20.2μC/cm2,Ec=43.9 k V/mm。这与BMT与PZT具有相似的晶格常数、较小的晶格失配度和相近的禁带宽度有关。     

Pb用量对锆钛酸铅薄膜微观结构和铁电性能的影响

在Pt/Ti/SiO2/Si基片上,通过多次匀胶旋涂-预热处理工艺制备了PbTiO3(PT)无机薄层夹心的锆钛酸铅(lead zirconate titanate,PZT)薄膜,然后经650℃退火处理得到了所需的具有钙钛矿结构的PZT铁电薄膜.用X射线衍射、原子力显微镜表征了PZT铁电薄膜微观结构,并测试铁电性能.结果表明:制备PT层时的Pb用量对得到的PZT铁电薄膜的微观结构和铁电性能有重要影响.当Pb过量15%(摩尔分数)左右时,得到的PZT铁电薄膜不仅晶界清晰,晶粒尺寸分布均匀,具有纯钙钛矿结构,而且铁电性能优异,剩余极化强度Pr=21μC/cm2,矫顽场Ec=37kV/cm.     

锰锑酸铅-锌铌酸铅-锆钛酸铅陶瓷的压电性能

以同时位于准同型相界的Pb(Mn1/3Sb2/3)0.05(Zr1/2Ti1/2)0.95O3(PMnS-PZT)与Pb(Zn1/3Nb2/3)0.28(Zr1/2Ti1/2)0.72O3(PZN-PZT)组合而成的xPb(Mn1/3Sb2/3)0.05(Zr1/2Ti1/2)0.95O3-(1-x)Pb(Zn1/3Nb2/3)0.28(Zr1/2Ti1/2)0.72O3[xPMnS-(1-x)PZN]四元系压电陶瓷为研究对象,研究了PZN和PMnS含量的变化对xPMnS-(1-x)PZN材料结构与性能的影响,制备了具有高性能的四元系xPMnS-(1-x)PZN陶瓷材料.结果表明:性能最好的组成位于准同型相界附近靠近四方相含量较高的区域.Ba2 ,Sr2 取代显著提高了材料的压电性能,Ba2 取代0.5PMnS-0.5PZN的性能为压电系数da3=406 pC/N,机电耦合系数kp=0.55,介电常数εT33/ε0=2 183,机械品质因数Qm=1 077和介电损耗tan δ=2.7%;Sr2 取代0.6 PMnS-0.4 PZN的性能为d33=438 pC/N,kp=0.55,εT33/ε0=2 701,Qm=1 073和tan δ=3.3%.     

射频磁控溅射制备PZT铁电薄膜的工艺研究

在SiO2/Si基片上采用直流对靶溅射技术制备出Pt/Ti底电极;应用射频磁控溅射方法,利用快速热处理(RTA)工艺,制备出了具有良好铁电性能的Pb(Zr0.52Ti0.48)O3铁电薄膜.将样品进行10min快速热退火处理,退火温度700℃.测试分析表明:薄膜厚度比较均匀、表面基本平整、没有裂纹和孔洞、致密性好、薄膜样品的矫顽场强(Ec)为28.6kV/cm,剩余极化强度(Pr)为18.7μC/cm2,自发极化强度(Ps)为37.5μC/cm2,是制备铁电薄膜存储器的优选材料.     

锆钛酸铅镧压电陶瓷纤维的制备与性能

以锆钛酸铅镧[(Pb1-xLax)(Zr1-yTiy)O3,lead lanthanum zirconate titanate,PLZT]压电陶瓷为原料,用塑性聚合物法制备不同截面的PLZT陶瓷纤维。用X射线衍射、扫描电镜、密度测试仪、微力试验机和铁电分析仪分别测试PLZT陶瓷纤维的相结构、显微形貌、密度、力学性能和铁电性能。结果表明:PLZT陶瓷纤维为三方相钙钛矿结构,圆柱形纤维的直径和方柱形纤维的边长分别约250μm和300μm。圆柱形和方柱形纤维的最终抗拉伸强度和弹性模量分别为24.88MPa、6.90×103MPa和23.97MPa、5.71×103MPa。PLZT陶瓷纤维均具有良好的铁电性能,圆柱形纤维的饱和场强、剩余极化强度(Pr)和矫顽场(Ec)分别为10kV/mm、41.40μC/cm2和1.10kV/mm;方柱形的饱和场强、Pr及Ec分别为10kV/mm、41.68μC/cm2和1.03kV/mm。     

La/Nb掺杂对Bi_4Ti_3O_(12)薄膜铁电性能和疲劳特性的影响

采用溶胶–凝胶工艺(sol–gel)在Pt/Ti/SiO2/p-Si衬底上分别制备Bi4–xLaxTi3O12和Bi4Ti3–yNbyO12铁电薄膜,研究La/Nb掺杂对Bi4Ti3O12薄膜铁电性能和疲劳特性的影响。结果表明:La/Nb掺杂均能有效改善Bi4Ti3O12薄膜的铁电性能和疲劳特性。当La摩尔(下同)掺量在0.5～0.75时,La掺杂对Bi4Ti3O12薄膜的性能改善作用最好,而且在明显提高薄膜铁电性能的同时,对薄膜疲劳特性的改善更加显著,薄膜经1010极化反转后,其剩余极化强度(Pr)仅下降5.1%。Nb掺杂对提高薄膜铁电性能的作用更加明显,Nb掺量为0.06时,Bi4Ti3–yNbyO12薄膜的Pr高达18.7μC/cm2,但Nb掺量不宜过多,当Nb掺量超过0.06以后,薄膜的铁电性能和疲劳特性均反而有所下降。     

陶瓷粉体粒度对PZN—PZT／PVDF压电复合材料性能的影响

将铌锌锆钛酸铅（PZN—PZT）压电陶瓷粉体分散于聚偏二氟乙烯（PVDF）基体中,制备出0-3型PZN—PZT／PVDF压电复合材料。文中研究了PZN—PZT陶瓷不同粒度对复合材料的压电性、介电性、铁电性的影响。结果表明,当陶瓷粒度为100～150目时,压电复合材料的综合性能最佳,压电常数d33达到23．10pC／N,剩余极化强度Pr达到5．131μC·era2,矫顽场Ec为45．7lkV·cm^-1,介电常数ε。为192．86,介电损耗tanδ为0．10。     

化学溶液法制备Pb(Zr_(0.52)Ti_(0.48))O_3-CoFe_2O_4复合薄膜及其电极

以硝酸镧和醋酸镍为原料,利用化学溶液法在硅基底上制备了具有良好导电性的LaNiO3(LNO)薄膜。以醋酸铅、硝酸氧锆、钛酸丁酯、硝酸铁、醋酸钴为原料,合成了Pb(Zr0.52Ti0.48)O3-CoFe2O4(PZT-CFO)溶液,并在LNO/Si薄膜上制备了PZT-CFO复合薄膜。通过X射线衍射、扫描电镜和电-磁测试研究了PZT-CFO复合薄膜的相结构、表面形貌、铁磁和铁电性能。结果表明:钙钛矿结构的PZT相和尖晶石结构的CFO相以纳米晶形式共存于PZT-CFO复合薄膜中,无其他杂相产生。750℃煅烧1h的PZT-CFO复合薄膜的剩余极化强度达6μC/cm2,剩余磁化强度可达20kA/m,表现出良好的铁磁、铁电双重特性。     

Li2CO3掺杂对0.2PMN-0.8PZT陶瓷的影响

利用铌铁矿预产物合成法,研究不同温度烧结下Li2CO3掺杂对0.2 PMN-0.8PZT压电陶瓷(简称PLC)的相结构和电性能的影响。X射线衍射(XRD)和扫描电镜(SEM)的分析结果表明,掺杂LiCO3的0.2PMN-0.8PZT压电陶瓷经不同温度煅烧后,所有陶瓷样品的相组成均为纯钙钛矿相,并随着烧结温度的升高,PLC的相结构有由四方相向菱方相转变的趋势。通过0.2PMN-0.8PZT压电陶瓷掺杂LiCO3煅烧后的微观形貌、介电常数、压电性能、铁电性能的分析,发现经1200℃烧结的样品的介电和压电性能最佳:介电常数(εr)为38512,室温压电常数(d33)为300 pC/N,剩余极化强度(Pr)为31.3 C/cm2,矫顽电场(Ec)为7.5 kV/cm。     

Hysteretic properties of Mn-doped Pb(Zr,Ti)O3 thin films

Pb(Zr,Ti)O₃ (PZT 30/70) and Mn-doped Pb(Zr,Ti)O₃ (PMZT 30/70) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition technique. The experiments found that the addition of Mn in PZT thin films greatly improves the ferroelectric properties of thin films. It is demonstrated that the Mn-doped (1 mol%) PZT showed fatigue-free characteristics at least up to 10¹⁰ switching bipolar pulse cycles under 10 V and excellent retention properties. The Mn-doped PZT thin films also exhibited well-defined hysteresis loops with a remnant polarization (Pr) of 34 μC/cm² and a coercive field (Ec) of 100 kV/cm for the thickness of 300 nm. Dielectric constant and loss (tanδ) for Mn doped PZT thin films are 214 and 0.008, respectively. These figures compare well with or exceed the values reported previously. In this paper, the mechanism by which Mn influences on the ferroelectric properties of PZT thin films has also been discussed.     

Fabrication and Properties of Sol–Gel-Derived BiScO3–PbTiO3 Thin Films

BiScO₃–PbTiO₃ (BSPT) thin films near the morphotropic phase boundary were successfully fabricated on Pt(111)/Ti/SiO₂/Si substrates via an aqueous sol–gel method. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 50 nm. The dielectric, ferroelectric, and piezoelectric properties of the sol–gel-derived BSPT thin films were investigated. A remanent polarization of 74 μC/cm² and a coercive field of 177 kV/cm were obtained. The local effective piezoelectric coefficient d ^*₃₃ was 23 pC/N at 2 V, measured by a scanning probe microscopy system. The dielectric peak appeared at 435°C, which was 80°C higher than that of Pb(Ti, Zr)O₃ thin films.     

The effect of calcium zirconate modifications on the microstructure and functional properties of sodium niobate thin films prepared by chemical solution deposition

Sodium niobate thin films doped with manganese (NN), and NN films modified with 5 or 10 mol % calcium zirconate (CZ) on platinized silicon substrates were prepared by chemical solution deposition. The 250-nm-thick films crystallize in a perovskite phase with fine, equiaxed grains. The NN films exhibit well-shaped ferroelectric loops with a remanent polarization and coercive field of ～10 μC/cm² and ～100 kV/cm, respectively. The modification with CZ strongly influences the ferroelectric response of the films: the remanent polarization progressively decreases to around 2.5 μC/cm². The absence of an anti-ferroelectric response, which has previously been confirmed in bulk NN-CZ ceramics, is attributed to the nanoscale microstructure and residual thermal stresses. All the studied films exhibit a piezoelectric response with the highest piezoelectric d₃₃ coefficient of 35 pm/V at 300 kV/cm bias field for the NN modified films with 5 mol % CZ, making them candidates for lead-free piezoelectric thin-film applications.     

Relationship Between Structure and Electric Properties of （0.99–x）BNT–xBKT–0.01KNN Near Morphotropic Phase Boundary

研究了三方、四方共存[即准同型相界（morphotropic phase boundary,MPB）]附近（0.99–x）Bi0.5Na0.5TiO3–xBi0.5K0.5TiO3–0.01K0.5Na0.5NbO3[（0.99–x）BNT–xBKT–0.01KNN,x=0.16～0.23]无铅压电陶瓷的电学性能与其结构之间的变化关系。X射线衍射分析表明,随着x的增大,陶瓷材料相结构由三方相转变为四方相。当x=0.20时,（111）和（200）面衍射峰均形成劈裂峰,标志着该组分的相结构由三方–四方相共同组成,形成MPB区。样品的介电温谱表明,铁电–反铁电转变温度（Td）随着x的增大而减小,但Curie点（TC）并未明显变化。电致应变（S）随着x的增大,呈现先增加后减小的趋势,并在x=0.20时得最大值0.46%,此时动态压电系数约为575 pm/V。电滞回线显示,陶瓷样品的剩余极化强度Pr和矫顽场Ec都随着x的增大而减小,分别由41.5μC/cm2降为15.2μC/cm2和由46.5kV/cm降为15.0kV/cm,并伴随着电滞回线由扁平到束腰的形状变化,呈现从铁电相特性到反铁电相特性的转变过程。     

Tailoring the Piezoelectric and Relaxor Properties of (Bi1/2Na1/2)TiO3–BaTiO3 via Zirconium Doping

This article details the influence of zirconium doping on the piezoelectric properties and relaxor characteristics of 94(Bi_1/2Na_1/2)TiO₃–6Ba(Zr_xTi_1?x)O₃ (BNT–6BZT) bulk ceramics. Neutron diffraction measurements of BNT–6BZT doped with 0%–15% Zr revealed an electric‐field‐induced transition of the average crystal structure from pseudo‐cubic to rhombohedral/tetragonal symmetries across the entire compositional range. The addition of Zr up to 10% stabilizes this transition, resulting in saturated polarization hysteresis loops with a maximum polarization of 40 μC/cm² at 5.5 kV/mm, while corresponding strain hysteresis measurements yield a maximum strain of 0.3%. With further Zr addition, the ferroelectric order is progressively destabilized and typical relaxor characteristics such as double peaks in the current density loops are observed. In the strain hysteresis, this destabilization leads to an increase of the maximum strain by 0.05%. These changes to the physical behavior caused by Zr addition are consistent with a reduction of the transition temperature T_F‐R, above which the field‐induced transformation from the relaxor to ferroelectric state becomes reversible.     

High electric field-induced strain properties in La-doped Pb(In1/2Nb1/2)O3–PbZrO3–PbTiO3 relaxor ferroelectric ceramics

Piezoelectric ceramics with high strain response and low hysteresis are highly in demand for high-performance actuator applications. Unfortunately, the trade-off relationship between large field-induced strain and low hysteresis in piezoelectric ceramics is a key challenge for designing high-performance piezoelectric actuators. Herein, ymol%La-doped 0.10 Pb(In_1/2Nb_1/2)O₃-xPbZrO₃-(0.90–x)PbTiO₃ [0.10PIN-xPZ-(0.90-x)PT: ymol%La] ternary relaxor ferroelectric ceramics were prepared by conventional solid-state reaction technique. Pb(In_1/2Nb_1/2)O₃ (PIN) as a relaxor end member was introduced into (Pb,La) (Zr,Ti)O₃ (PLZT) system to improve relaxor characteristics and strain properties. A giant strain of 0.23% was obtained in 0.10PIN-0.59PZ-0.31 PT: 8mol%La ceramic at the electric field of 20 kV/cm, with a high piezoelectric d₃₃* of 1150 pm/V and low hysteresis H_y of 6.4%, exhibiting a potential application in high-performance piezoelectric actuators. Furthermore, the effects of La ion doping and components on the ferroelectric, dielectric and electric field-induced strain properties were investigated, and provides a new way for improve the strain properties of piezoelectric materials.     

准同型相界附近(0.99-x)BNT–xBKT–0.01KNN结构与电性能关系

研究了三方、四方共存[即准同型相界(morphotropic phase boundary,MPB)]附近(0.99–x)Bi0.5Na0.5TiO3–xBi0.5K0.5TiO3–0.01K0.5Na0.5NbO3[(0.99–x)BNT–xBKT–0.01KNN,x=0.16～0.23]无铅压电陶瓷的电学性能与其结构之间的变化关系。X射线衍射分析表明,随着x的增大,陶瓷材料相结构由三方相转变为四方相。当x=0.20时,(111)和(200)面衍射峰均形成劈裂峰,标志着该组分的相结构由三方–四方相共同组成,形成MPB区。样品的介电温谱表明,铁电–反铁电转变温度(Td)随着x的增大而减小,但Curie点(TC)并未明显变化。电致应变(S)随着x的增大,呈现先增加后减小的趋势,并在x=0.20时得最大值0.46%,此时动态压电系数约为575pm/V。电滞回线显示,陶瓷样品的剩余极化强度Pr和矫顽场Ec都随着x的增大而减小,分别由41.5μC/cm2降为15.2μC/cm2和由46.5kV/cm降为15.0kV/cm,并伴随着电滞回线由扁平到束腰的形状变化,呈现从铁电相特性到反铁电相特性的转变过程。     

Effect of Microstructure on Ferroelectric and Piezoelectric Properties of A-Site and B-Site Modified PLZT

Ba modified (Pb,La,Ag)(Zr,Ti)O₃ ceramics synthesized by conventional mixed-oxide method with chemical formula [Pb_{0.983 - z}La_0.012Ag_0.005Ba_z] [(Zr_0.52Ti_0.48)_0.99825]O₃ were investigated for ferroelectric and piezoelectric properties. XRD studies indicate that increment of Ba concentration resulted in strong tetragonality in the ceramics. Grain growth (3.08 μ m) inhibited and apparent density (7.54 gm/cm³) enhanced up to 1.5 mole% Ba respectively. As Ba content increased dielectric properties showed maximum values (ε_RT = 2347, ε_Tc = 23449) while T_c constantly decreased. The remanent (P_r = 34.72 μ C/cm²) and spontaneous polarization (P_s = 41.84 μ C/cm²) were optimum in 1 mole% Ba respectively while E_c showed increasing trend throughout the series. Piezoelectric properties attained maximum values of d₃₃ = 438 pC/N in 1.5 mole% Ba while k_p = 0.533 and k_t = 0.412 in 1 mole% Ba doped (Pb,La,Ag)(Zr,Ti)O₃ ceramics respectively.