一种新型的具有带阻特性的超宽带微带天线

设计制作了一种新型的具有带阻特性的超宽带微带天线。天线采用50Ω共面波导馈电结构,辐射单元采用圆形金属贴片,在圆形贴片上开一个倒U形槽,实现了天线的带阻特性。测试结果表明:在频率段2.8-12.0 GHz内(除5.00-5.95 GHz外)天线驻波比小于2,且天线具有近似全向辐射的特性;而天线在频率段5.00-5.95 GHz内形成了阻带,从而有效阻隔了WLAN(5.150-5.825 GHz)频率段。该天线具有尺寸小,易于与微波电路集成等优点,可以用于超宽带系统。     

Broad-Band Characteristics of EHF IMPATT Diodes

Measurements have been made of the oscillator characteristics when a GaAs EHF double-drift IMPATT diode designed for a frequency of 35 GHz is operated over an extended frequency range from 33-50 GHz. The diode which was designed for 35 GHz has a broad-band capability which allows it to produce 2.15 W at 44.1 GHz. An analytic model is shown to predict accurately the observed results. The model indicates that the upper limit in frequency can be increased by reducing the diode area or the series resistance as well as by reducing the length of the drift region.     

基于双光频梳的多频段变频方法

为了探寻一种基于光频梳的灵活、高效的多频段变频方案,采用一个双驱动马赫-曾德尔调制器（D-MZM）和两个双平行马赫-曾德尔调制器（DP-MZM）组成的系统,由接收到的射频信号驱动D-MZM,进行单边带调制,进而得到一个载波和+1阶边带。利用两个DP-MZM分别作为两个光频梳产生器,产生两个相位相干、中心频率不同的光频梳,并进行了理论分析和实验验证;同时还研究了直流偏置点漂移对系统变频效率的影响。结果表明,所提出的变频系统,可将Ku波段的15GHz微波信号转化成3GHz,7GHz,11GHz,19GHz,23GHz和27GHz的信号;输出的微波信号信噪比可达28.82dB~29.99dB;直流偏置点的漂移量在-10%~50%范围内影响明显。该方法可为卫星通信系统提供多频段变频功能,从而满足多频段通信需求。     

A low-phase-noise voltage-controlled oscillator for 17-GHz applications

A silicon bipolar voltage-controlled oscillator (VCO) for 17-GHz applications is presented. The VCO is composed of a core oscillating at 9GHz followed by a frequency doubler. It adopts a transformer-based topology to obtain both wide tuning range and low noise performance. The VCO exhibits a tuning range of 4.1GHz from 16.4 to 20.5GHz and a phase noise as low as -109dBc/Hz at a 1-MHz frequency offset from a carrier of 18.5GHz.     

An all solid-state 330 GHz frequency multiplying Chain for 664 GHz radiometers application

An all solid-state 330 GHz ×6 × 2 × 2 frequency multiplying chain is constructed and tested and it is used as a local oscillator (LO) in 664 GHz radiometers for cirrus clouds and cloud ice detecting. The frequency multiplying chain consists of a W-band sextupler, followed by a power-combined amplifier which delivers 460–540 mW output power, and two cascaded 165 GHz and 330 GHz balanced frequency doublers. The 165 GHz two-ways power-combined doubler applies four three-anode in series GaAs Schottky diodes to generate 50–63 mW output power in the frequency range 160–176 GHz, and its tested typical efficiency is 11.5%. The cascaded 330 GHz doubler uses a four-anode in anti-series arranged GaAs diode to generate 2.5–4.5 mW output power in the frequency range 320–352 GHz, and its tested typical efficiency is 6.0% and the maximum value is 8.0% at 328 GHz. The output power of the multiplying chain is high enough to pump the 664 GHz heterodyne radiometer for space application.     

A packaged Schottky diode as detector,harmonic mixer,and harmonic generator in the 25–500 GHz range

This paper describes experimental results obtained with a packaged GaAs Schottky barrier diode in contact with a coaxial connector and placed across waveguides for bands Ka, V, E, W or F. Among the microwave sources used for calibration were 9 carcinotrons in the frequency interval 51–490 GHz. As soon as the frequency F is above the waveguide cut-off frequency, the different characteristics do not depend critically on the waveguide size for V, E, W and F bands. The video detection sensitivity, of several 100 mV/mW at 50 GHz and below, decreases as F^?4 in the range 51–500 GHz. Coupling an X-band centimeter frequency via the coaxial connector and a millimeter frequency via the waveguide permits harmonic mixing in the diode. Between 36 and 490 GHz, the harmonic mixing number varies from 3 up to the very large value 40 with conversion losses from 18 to 88 dB. The minimum detectable signal in the 100 kHz band can be as low as ?90 dBm at 80 GHz. A noticeable millimeter power is available at the waveguide output from injected centimeter power by harmonic generation. Starting for instance with 100 mW around 11.5 GHz, we have measured 0.1 mW at 80 GHz and 0.1 μW at 230 GHz. To illustrate the possibility of creating usable millimeter and submillimeter wave without heavy equipment (such as carcinotrons or millimeter klystron) we report spectroscopic experiments in Rydberg atoms. Resonances have been observed up to 340 GHz by harmonic generation (28th harmonic) from an X-band klystron).     

A Si bipolar 28-GHz dynamic frequency divider

A dynamic frequency divider applying the regenerative frequency division principle has been developed. A spiral inductor on the silicon substrate used as a load is characterized, and an improved one-port model with the substrate resistance is discussed. A 1/16 frequency divider was implemented with a silicon bipolar technology with a cutoff frequency of 40 GHz. The operation frequency range was 11.8-28.1 GHz, covering the Ka band (18-26.5 GHz). The inductive load has improved the maximum operation frequency by 7%, compared with a conventional circuit. Complemented with a 21-GHz static frequency divider previously reported by the authors, the whole microwave frequency range up to 26.5 GHz has been completely covered with the silicon bipolar technology. The maximum operation frequency of a silicon MMIC has been extended to the millimeter-wave frequency region for the first time     

适用于物联网多频段通信的矩形微带天线设计

为满足主流物联网通信技术的应用需求,提出一种新型的矩形微带单极天线,适用于多频段通信,如射频识别、全球定位系统和无线局域网等。该矩形微带天线由一个带两个U形槽的矩形贴片和一个带两个长方形槽的接地面组成,具有四个工作频段,当谐振频率分别为1.22GHz, 2.47GHz, 3.61GHz和5.60 GHz时,相对带宽为25.7%（1.12~1.45 GHz）、25.3%（2.24~2.89 GHz）、15.7%（3.40~3.98 GHz）以及13.6%（5.21~5.97GHz）。仿真与实测结果显示,该天线的工作频段数量更多且相对带宽更高,在各工作频段内具有良好的全向辐射特性。     

K波段注入锁相固态稳频源

本文报道一个结合毫米波和亚毫米波频率合成和频率精密测量的实际需要而研制的1．25厘米波段注入锁相固态微波稳频源。该稳频源主要由840MHz注入锁相晶体管振荡器、将840MHz信号27信频到2268GHz的阶区二极管高次培频器和22.68GHz注入锁相体效应管振荡器组成。其频率长期稳定度和频率准确度为10（-8）量级，输出频率在22.56GHz至22.96GHz范围内以2.7kHz或6.75kHz的步进间隔断续可调，输出功率约60mW。已被作为短厘米波段的频率基准成功地用于4毫米波段的频率合成和HCN亚毫米被激光器337μm谱线的频率精密测量。     

双波段高抑制的LTCC微型双工器设计

该文设计了基于低温共烧陶瓷(LTCC)技术的双波段高抑制、低损耗的双工器。该双工器由低通滤波器和带通滤波器组成,且在低、高频段的阻带抑制方面运用了传输零点理论,在实现双工器低损耗的同时,也实现了在多波段的高抑制,提升了双工器的性能。该双工器在低频段(0.68~0.95 GHz)及高频段(1.43~2.40 GHz)时插损均小于1.2 dB,但在1.43~2.40 GHz时双工器抑制大于20 dB,0.68~0.95 GHz时双工器抑制大于15 dB。在4.9~5.9 GHz时双工器抑制大于13 dB,具有良好的市场应用前景。     

High-speed and low-power GaAs DCFL divider

High-speed and low-power divide-by-252 or -256 circuit have been fabricated by using high-transconductance GaAs enhancement-mode MESFETs. This variable-modulus divider is able to operate up to a clock frequency of 3.7 GHz. The total power dissipation at the maximum frequency is 180 mW, and it is as low as 42 mW and 30 mW at 3 GHz and 2.5 GHz, respectively.     

考虑频率波动的微波加热数值模拟模型

家用微波炉内磁控管的频率会有波动,且难以测定。为考查微波频率波动对样品温度分布的影响, 获得更加精确的仿真结果,研究假设家用微波炉的频率以2. 45 GHz 为中心波动,并对不同波动范围的频率(2.44~2.46 GHz,2.43~2.47 GHz,2.41~2.49 GHz)与单个频率(2.45 GHz)的基于有限元模型的仿真结果与实验结果进行了比较分析。实验对象是放置于微波炉内加热60 s 的土豆泥。对于不同的频率范围分布,每隔0. 005 GHz 计算一次电磁功率密度,并根据余弦分布对它们进行加权平均,最后将电磁功率作为热源加热土豆泥。模拟结果分别与用热成像仪和光纤热电偶测定的土豆泥表面温度分布和各部位瞬时温度的实验值进行比较。结果显示频率波动范围在2.44~2.46 GHz 预测的温度场与实验值有较好的一致性;而在2.41~2.49 GHz 范围内,温度分布的均匀性最好。该模型也可为指导微波食品的开发提供理论依据。     

各向异性左手材料平面波导TE模的传输特性

对芯层为左手材料而覆盖层和衬底均为不同普通材料的三层平面波导进行了探讨。考虑损耗、色散和各向异性的左手材料,利用TE模的色散方程,结合模阶数、波导厚度以及电磁衰减系数的变化,画出了相关的色散曲线和损耗曲线。根据这些曲线,发现对于TE2模,在频率为4.03GHz附近,波导厚度为5mm,它有非常大的有效折射率(接近80);当频率从4.0GHz增加到6.0GHz,色散曲线的斜率为正、零和负。正斜率为正常色散,负斜率为反常色散,零斜率则群速为零。对于高阶TE模,当频率为4.03GHz时,它的损耗是最大的;当频率超过5.0GHz后,波导厚度以及电磁衰减常数的变化对TE模的损耗特性影响不大,这些新特性为制备小型化的波导器件提供了理论基础。     

基于单片机控制的频率综合器设计

以ADF4360芯片为核心,设计实现了频率综合器作为1.95 GHz一次变频超外差射频接收机的本振部分,并制作了单片机控制电路。经测试,可以在1.6GHz～1.95GHz范围内以0.5MHz为步长调节输出本振信号频率。在频率为1.9GHz时,相位噪声为-68dBc/Hz（1kHzoffset）、-71dBc/Hz（10kHz offset）、-110dBc/Hz（100kHz offset）、-115dBc/Hz（1MHz off-set）。频率偏差小于50kHz。     

A Fully Embedded LTCC Multilayer BPF for 3-D Integration of 40-GHz Radio

This paper demonstrates a low loss fully embedded multilayer bandpass filter (BPF) using low-temperature cofired ceramic (LTCC) technology for 3-D integration of 40-GHz multimedia wireless system (MWS) radio. The LTCC filter implemented in a stripline configuration occupies an area of only 5.5 times 2.3 times 0.6 mm including shielding structure and coplanar waveguide (CPW) transitions. The measured insertion loss was as small as 1.9 dB at a center frequency of 41.8 GHz, and the return loss was 12.2 dB including the loss associated with two CPW-to-stripline transitions. This six-layer BPF showed 3-dB bandwidth of 10.5% from 39.6 to 44.0 GHz at a center frequency of 41.8 GHz and suppressed the local oscillator (LO) signal to 20.2 dB at a local oscillator frequency of 38.8 GHz, making it suitable for the 40 GHz MWS applications.     

Design of a Compact Hexagonal Monopole Antenna for Ultra—Wideband Applications

This paper presents two design compact hexagonal monopole antennas for ultra-wideband applications. The two antennas are fed by a single microstrip line . The Zeland IE3D version 12 is employed for analysis at the frequency band of 4 to 14 GHz which has approved as a commercial UWB band. The experimental and simulation results exhibit good agreement together for antenna 1. The proposed antenna1 is able to achieve an impedance bandwidth about 111%. The proposed antenna2 is able to achieve an impedance bandwidth about (31.58%) for lower frequency and (62.54%) for upper frequency bandwidth. A simulated frequency notched band ranging from 6.05 GHz to 7.33 GHz and a measured frequency notched band ranging from 6.22 GHz to 8.99 GHz are achieved and gives one narrow band of axial ratio (1.43%). The proposed antennas can be used in wireless ultra-wideband (UWB) communications.     

A 94/47 GHz frequency halver using a GaAs Gunn device

This paper describes the basic principles and the set up of a new kind of frequency halvers suited for millimeter wave applications. A Ga As Gunn-device is used to act like a nonostable multivibrator having a hold time adequate to the domain transit time T_t of the Gunn-device. In a certain frequency range depending on the transit frequency f_T=1/T_T, bias voltage and circuit parameters a harmonic wave synchronized fundamental/2nd harnonic mode oscillator is able to perform as a frequency halver. An input power of only 1mW is sufficient to achieve a bandwidth of 5 GHz respectively 2.5 GHz centered around 94 GHz respectively 47GHz. Since the output power is 50 mW at fundamental frequency f_F, this halver offers 17dB conversion gain.     

4.9 GHz异帧干扰问题研究

相对2.6 GHz频段,4.9 GHz频段可以通过灵活的帧结构配置满足上行大带宽的行业应用需求,但异帧结构组网可能导致基站和终端之间存在交叉时隙干扰,因此研究4.9 GHz的异帧干扰问题是非常必要的。基于3D-UMa传播模型,研究了4.9 GHz频段1D:3U:1S和5D:3U:2S帧结构配置下的交叉时隙干扰问题,并结合当下行业网需求现状给出了不同场景下的4.9 GHz帧结构按需配置建议,以及干扰管理解决方法,为5G行业网帧结构部署和站址规划提供了理论指导。     

宽频率范围的单子带压控振荡器设计

基于TSMC 180 nm CMOS工艺,提出了一种振荡频率为2～3 GHz的宽频率范围、低相位噪声的单子带压控振荡器(VCO).采用双平衡吉尔伯特混频结构,将单子带5～6 GHz压控振荡器与固定频率3 GHz压控振荡器进行下混频,可得到振荡频率为2～3 GHz的单子带压控振荡器,实现相对带宽从18.18％到40％的展...