ZnxCd1 − xS as a heterojunction partner for CuIn1 − xGaxS2 thin film solar cells

Zinc cadmium sulfide (Zn_xCd_1 − xS) heterojunction partner layer prepared with chemical bath deposition (CBD) has exhibited better blue photon response and higher current densities due to its higher bandgap than that of conventional cadmium sulfide (CdS) layer for CuIn_1 − xGa_xS₂ (CIGS2) solar cells. CIGS2/Zn_xCd_1 − xS devices have also shown higher open circuit voltage, V_oc indicating improved junction properties. A conduction band offset has been observed by J-V curves at various temperatures indicating that still higher V_oc can be obtained by optimizing the conduction band offset. This contribution discusses the effect of variation of parameters such as concentration of compounds, pH of solution and deposition time during CBD on device properties and composition and crystallinity of film. Efficiencies comparable to CIGS2/CdS devices have been achieved for CIGS2/Zn_xCd_1 − xS devices.     

Synthesis of Zn1 − xCdxO bramble-like nanostructures

Ternary Zn_1 − xCd_xO bramble-like nanostructures with a Cd incorporation of about 6.7 at.% were produced onto Au-catalyzed Si substrate by thermal evaporation of Zn and Cd. The X-ray diffraction (XRD) analysis showed that the existence of lattice expansion in the c-axis orientation. The ultra-violet (UV) near-band-edge (NBE) emission of the Zn_1 − xCd_xO nanobrambles was red-shifted from 369 nm (3.37 eV) to 397 nm (3.13 eV) due to Cd substitution. The oxygen partial pressure was deemed as the critical experimental parameter for the formation of the bramble-like Zn_1 − xCd_xO nanostructures.     

Structural and optical properties of rock-salt Cd1 − xZnxO thin films prepared by thermal decomposition of electrodeposited Cd1 − xZnxO2

Cd_1 − xZn_xO nanocrystalline thin films with rock-salt structure were obtained through thermal decomposition of Cd_1 − xZn_xO₂ (x = 0, 0.37, 0.57, 1) thin films which were electrodeposited from aqueous solution at room temperature. X-ray diffraction results showed that the Zn ions were incorporated into rock salt-structure of CdO and the crystal lattice parameters decreased with the increase of Zn contents. The bandgaps of the Cd_1 − xZn_xO thin films were obtained from optical transmission and were 2.40, 2.51, 2.63 and 3.25 eV, respectively.     

Band alignment of Cd(1 − x)ZnxS produced by spray pyrolysis method

Cd_(1 − x)Zn_xS thin films have been grown on glass substrates by the spray pyrolysis method using CdCl₂ (0.05 M), ZnCl₂ (0.05 M) and H₂NCSNH₂ (0.05 M) solutions and a substrate temperature of 260 °C. The energy band gap, which depends on the mole fraction × in the spray solution used for preparing the Cd_(1 − x)Zn_xS thin films, was determined. The energy band gaps of CdS and ZnS were determined from absorbance measurements in the visible range as 2.445 eV and 3.75 eV, respectively, using Tauc theory. On the other hand, the values calculated using Elliott-Toyozawa theory were 2.486 eV and 3.87 eV, respectively. The exciton binding energies of Cd_0.8Zn_0.2S and ZnS determined using Elliott-Toyozawa theory were 38 meV and 40 meV, respectively. X-ray diffraction results showed that the Cd_(1 − x)Zn_xS thin films formed were polycrystalline with hexagonal grain structure. Atomic force microscopy studies showed that the surface roughness of the Cd_(1 − x)Zn_xS thin films was about 50 nm. Grain sizes of the Cd_(1 − x)Zn_xS thin films varied between 100 and 760 nm.     

In air synthesis of hexagonal Cd1 − xZnxS nanoparticles from single-source molecular precursors

Ternary II-VI semiconductors have many excellent physical and chemical properties, and can be used in multiple technical fields. But their previous solid state synthesis methods usually need high reaction temperatures and rigorous conditions (e.g., in vacuum or under the protection of inert gases). In this letter, we report a novel solid state synthesis of hexagonal Cd_1 − xZn_xS (x = 0-1) nanoparticles in air from a class of solid air-stable single-source molecular precursors (cadmium zinc bis(N,N-diethyldithiocarbamate, Cd_1 − xZn_x-(DDTC)₂) by two facile steps: firstly, Cd_1 − xZn_x-(DDTC)₂ (x = 0-1) were prepared directly through the precipitation reactions of stoichiometric cadmium sulfate, zinc acetate and sodium diethyldithiocarbamate in distilled water under the ambient condition (8 °C, 1 atmospheric pressure); secondly, hexagonal Cd_1 − xZn_xS (x = 0-1) nanoparticles were produced simply via thermolysis of the single-source precursors in air at 300 °C for 3 h. The proposed method may serve as a kind of simple, mild and cheap way to synthesize nanomaterials of many ternary metal sulfide semiconductors, which have promising applications in the photocatalysis and optoelectronic devices.     

Synthesis and electrical properties of ordered perovskite oxide Cd3−x−yCuxAyTeO6 (A = Li, Na; 0.00 ≤ x, y ≤ 0.15)

Polycrystalline Cd_3−x−yCu_xA_yTeO₆ (A = Li, Na) samples were prepared by solid-state reaction, and their crystal structure and electrical properties were investigated. In Cd_3−xCu_xTeO₆ and Cd_3−yA_yTeO₆ (A = Li, Na), the maxim solubility of x and y was 0.15 and 0.15 for A = Li, 0.05 for A = Na, respectively. For co-substituted samples Cd_2.9−yCu_0.1Li_yTeO₆ and Cd_2.9−yCu_0.1Na_yTeO₆, the maxim solubility of x was the same as single substitution above-mentioned. The alkali-metal substituted samples Cd_3−yA_yTeO₆ (A = Li, Na) showed a negative Seebeck coefficient, which indicates that the major conduction carriers are electron. On the other hand, the co-substituted samples Cd_2.9−yCu_0.1A_yTeO₆ (A = Li, Na) represented a positive Seebeck coefficient, and major conduction carriers were hole through substitution by copper ions.     

Study on the optical properties of Zn1−xMgxS (0 ≤ x ≤ 0.55) quantum dots prepared by precipitation method

Zn_1−xMg_xS (0 ≤ x ≤ 0.55) quantum dots (QDs) were successfully synthesized by precipitation method. The crystal structures, microstructures, and optical properties of the Zn_1−xMg_xS QDs were investigated using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible and photoluminescence (PL) spectroscopy. The Zn_1−xMg_xS QDs were found to have a cubic crystal structure and an average crystallite size of 6.40-7.96 nm. It has been shown that an increase in doping Mg²⁺ concentration in Zn_1−xMg_xS QDs led to a gradual widening of the band gap and a weakening in the PL intensity of the Zn_1−xMg_xS QDs.     

Synthesis and magnetic properties of layered MnPSxSe3−x (0 < x < 3) and corresponding intercalation compounds of 2,2′-bipyridine

In this work, we synthesize a series of new MnPS_xSe_3−x (0 < x < 3) compounds by high temperature solid-state reaction and also obtain the corresponding intercalation compounds (Mn_1−yPS_xSe_3−x(bipy)_4y, x = 1.2, 1.8 and 2.4) via the intercalation of 2,2′-bipyridine with MnPS_xSe_3−x. XRD results confirm that MnPS_xSe_3−x compounds show the layered structure and can be regarded as the solid solution of MnPS₃ and MnPSe₃. Magnetic measurements indicate that MnPS_xSe_3−x compounds exhibit paramagnetism with negative Weiss constant in the paramagnetic temperature region, and an antiferromagnetic phase transition occurs at the Neel temperature. It is found that the magnetic properties of MnPS_xSe_3−x slab are dramatically changed after the intercalation of 2,2′-bipyridine, which is close related to the relative ratio of S and Se atom as well as the intralayered Mn²⁺ vacancies of MnPS_xSe_3−x slab.     

High-frequency magneto-electrical properties of Zn1 − x − yAlxCoyO thin films

The Al doping effects on high-frequency magneto-electric properties of Zn_{1 − x − y}Al_xCo_yO (x = 0-10.65 at.%) thin films were systematically studied. In the current work, the Zn_{1 − x − y}Al_xCo_yO thin films were deposited by magnetron co-sputtering onto quartz substrates. The magneto-impedance spectra of the thin films were measured by an impedance analyzer. Among all the doped films studied, the thin film with 6.03 at.% Al-doping showed the highest ac conductivity and relaxation frequency. To characterize the relaxation mechanism underlying the magneto-electric properties, a Cole-Cole impedance model was applied to analyze the impedance spectra. The analyzed result showed that the magneto-impedance of the Zn_{1 − x − y}Al_xCo_yO is contributed by multiple processes of magnetization dynamics and dielectric relaxation. The results imply that Zn_{1 − x − y}Al_xCo_yO may be applicable for high-frequency magneto-electric devices.     

Effect of B-site doping on Sm0.5Sr0.5MxCo1−xO3−δ properties for IT-SOFC cathode material (M = Fe, Mn)

The crystal structure, thermal expansion rate, electrical conductivity and electrochemical performance of Sm_0.5Sr_0.5M_xCo_1−xO_3−δ (M = Fe, Mn) have been investigated. Two crystal structures have been observed in the specimens of Sm_0.5Sr_0.5Fe_xCo_1−xO_3−δ (SSFC) at room temperature, the perovskite structure of SSFC has an orthorhombic symmetry for 0 ≤ x ≤ 0.4 and a cubic symmetry for 0.5 ≤ x ≤ 0.9. The specimens of Sm_0.5Sr_0.5Mn_xCo_1−xO_3−δ (SSMC) crystallize in an orthorhombic structure. The adjustment of thermal expansion rate to electrolyte, which is one of the main problems of SSC, can be achieved to lower TEC values with more Fe and Mn substitution. Especially, Sm_0.5Sr_0.5Mn_0.8Co_0.2O_3−δ exhibits good thermal compatibility with La_0.8Sr_0.2Ga_0.8Mg_0.2O₃. High electrical conductivities are obtained for all the specimens and they demonstrate above 100 S/cm at 800 °C in SSFC system. The polarization resistance increases with increasing Mn content, Nevertheless, the polarization resistance of SSFC increases with increasing Fe content, but when the amount of Fe reaches to 0.4, the maximum is obtained while the resistance will decrease when the amount of Fe reaches above 0.4. Sm_0.5Sr_0.5Fe_0.8Co_0.2O_3−δ electrode exhibits high catalytic activity for oxygen reduction operating at temperature from 700 to 800 °C.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Structural and magnetic properties of La0.85Ca0.15Mn1 − xCrxO3

Chromium (Cr) is doped at the Mn site of La_0.85Ca_0.15MnO₃ system to explore its complex ferromagnetic insulating (FMI) state. The Rietveld refinement of neutron diffraction data indicates that there is no structural change owing to Cr substitution in La_0.85Ca_0.15Mn_1 − xCr_xO₃ (0 ≤ x ≤ 0.1). Nevertheless, it strengthens the magnetic couplings and the system shifts towards enhanced ferromagnetic (FM) ordering. Doping with Cr is found to stabilise the FMI state at low temperatures. The magnetic moment of the parent compound (for x = 0) obtained from neutron diffraction data recorded at low temperature (17 K) is found to be ~ 3.53(5) μ_B and is close to the theoretically estimated value of 3.85 μ_B. This value is higher than previously reported value of 2.90 μ_B.     

Annealing effect on structural and electrical properties of thermally evaporated Cd1−xMnxS nanocrystalline films

Thin films of Cd_1−xMn_xS (0 ≤ x ≤ 0.5) were deposited on glass substrates by thermal evaporation. All the films were deposited at 300 K and annealed at 573 K. The as-deposited and the annealed films were characterized for composition, structure and microstructure by using energy-dispersive analysis for X-rays, X-ray diffraction, scanning electron microscopy and atomic force microscopy. Electrical conductivity was studied in the temperature range 190-450 K. All the films exhibited wurtzite structure of the host material with the grain size varying in the range between 36 and 82 nm. Resistivity of all the films is strongly dependent on Mn content and annealing temperature and lies in the range 13-160 Ω cm.     

Negative thermal expansion and electrical properties of Mn3(Cu0.6NbxGe0.4 − x)N (x = 0.05-0.25) compounds

Bulk materials with the general formula of Mn₃(Cu_0.6Nb_xGe_0.4 − x)N (x = 0.05, 0.1, 0.15, 0.2, 0.25), Mn₃(Cu_0.6Ge_0.4)N and Mn₃(Cu_0.7Ge_0.3)N were fabricated by mechanical ball milling and solid state sintering. Their thermal expansion coefficients and electrical conductivities were investigated in the temperature range of 80-300 K. It is found that the temperature interval of negative temperature expansion behavior is about 95 K in the samples of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N and Mn₃(Cu_0.6 Nb_0.2Ge_0.2)N, which is twice as large as that of Mn₃(Cu_0.7Ge_0.3)N. The negative thermal expansion of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N can reach to − 19.5 × 10⁻⁶ K^− 1 in the temperature range of 165 to 210 K. The electrical conductivity of this series materials is in a level of about 2.5 × 10⁶ (Ω m)^− 1.     

Ethanol-thermal synthesis of Cd1−xZnxS nanoparticles with enhanced photodegradation of 4-chlorophenol

Cd_1−xZn_xS nanoparticles were prepared by a one-pot solvothermal process from Zn(CH₃COO)₂, Cd(CH₃COO)₂ and NaS₂CNEt₂·3H₂O (sodium diethyldithiocarbamate, DDTC). The Cd_1−xZn_xS nanoparticles were characterized by X-ray powder diffraction, transmission electron microscope and high-resolution transmission electron microscope equipped with an energy-dispersive X-ray spectrometer. The absorption spectra of the Cd_1−xZn_xS nanoparticles can be tuned into visible region by modulating stoichiometric ratio between Zn and Cd. With the increase of Zn content, the Cd_1−xZn_xS nanoparticles showed an enhanced photocatalytic activity on degradation of 4-chlorophenol. The Cd_1−xZn_xS prepared under the optimal experimental condition (initial Zn/Cd = 3:1, 210 °C, 24 h, in ethanol) possessed the best photocatalytic activity. The conversion ratio could reach up to 84% after 12 h under irradiation of visible light for Cd_1−xZn_xS prepared in ethanol, which was obviously superior to those of products prepared in water. These results showed that both crystallinity and synthetic medium were responsible for the enhanced photocatalytic activity for 4-chlorophenol.     

Optical properties of Cd1−xZnxS thin films for CuInGaSe2 solar cell application

The photovoltaic Cd_1−xZn_xS thin films, fabricated by chemical bath deposition, were successfully used as n-type buffer layer in CuInGaSe₂ (CIGS) solar cells. Comprehensive optical properties of the Cd_1−xZn_xS thin films were measured and modeled by spectroscopic ellipsometry (SE), which is proven to be an excellent and non-destructive technique to determine optical properties of thin films. The optical band gap of Cd_1−xZn_xS thin films can be tuned from 2.43 eV to 3.25 eV by controlling the Zn content (x) and deposition conditions. The wider-band-gap Cd_1−xZn_xS film was found to be favorable to improve the quantum efficiency in the wavelength range of 450-550 nm, resulting in an increase of short-circuits current for solar cells. From the characterization of quantum efficiency (QE) and current-voltage curve (J-V) of CIGS cells, the Cd_1−xZn_xS films (x = 0.32, 0.45) were demonstrated to significantly enhance the photovoltaic performance of CIGS solar cell. The highest efficiency (10.5%) of CIGS solar cell was obtained using a dense and homogenous Cd_0.68Zn_0.32S thin film as the buffer layer.     

Oxide-ion conductivity in CuxCe1−xO2−δ (0 ≤ x ≤ 0.10)

Up to 10 at.% of copper readily substitutes for cerium in ceria. It is found that at oxygen partial pressures between 0.21 atm and 10⁻⁵ atm, Cu_xCe_1−xO_2−δ (0 ≤ x ≤ 0.10) solid solution behave as an oxide-ion electrolyte. Interestingly, Cu_0.10Ce_0.90O_2−δ exhibits the oxide-ion conductivity of ca. 10⁻⁴ Ω⁻¹ cm⁻¹ at 600 °C at an oxygen partial pressure of 10⁻⁵ atm.     

Synthesis, structural and magnetic properties of La1−xCdxFeO3 (0.0 ≤ x ≤ 0.3) orthoferrites

Nanocrystalline La_1−xCd_xFeO₃ (0.0 ≤ x ≤ 0.3) solid solutions have been synthesized by a single-step solution combustion method at a relatively low temperature of 400 °C. The combustion-synthesized solid solutions were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR), and magnetic measurements. The crystal structure examined by XRD indicates that the samples were single-phase, and crystallize in an orthorhombic (space group, Pbnm no. 62) structure. The parent and doped compounds showed canted antiferromagnetic behavior associated with an increase in magnetic moment with Cd doping. The changes in magnetic properties of the materials are correlated to the changes in structural features resulting from the Rietveld structural refinement of the materials.     

Basic properties of Sr1 − xBaxSi2

Basic properties, such as the phase relationship, crystal structure, and energy gap E_g, have been investigated in Sr-rich Sr_1 − xBa_xSi₂. Sr_1 − xBa_xSi₂ (0 ≤ x ≤ 1.0) has two phases: one with the SrSi₂-type structure and another with the BaSi₂-type structure. The SrSi₂ phase exists at x ranging from 0 to 0.13, and the BaSi₂ phase exists at x ranging from 0.24 to 1.0. The volume increases with x in both the SrSi₂ and BaSi₂ phases. A volume jump of 13.7% appears at the structural phase transition from the SrSi₂ phase to the BaSi₂ phase. E_g increases with x in SrSi₂-phase Sr_1 − xBa_xSi₂ but E_g decreases with x in the BaSi₂-phase Sr_1 − xBa_xSi₂. In Sr-rich BaSi₂-phase Sr_1 − xBa_xSi₂, Ba atoms at a specific crystallographic site, the A1 site, are preferentially substituted by Sr atoms, as well as in Ba-rich BaSi₂-phase Sr_1 − xBa_xSi₂.     

Enhancing epitaxial SixC1 − x deposition by adding Ge

In this work, a possible way to enhance the epitaxial growth of metastable, tensile strained Si_xC_1 − x layers by the addition of germanium is demonstrated. During ultra-high vacuum chemical vapor deposition growth, the co-mixing of germane to the Si_xC_1 − x precursors was found to enhance the growth rate by a factor of ~ 3 compared to the growth of pure Si_xC_1 − x. Furthermore, an increase of the amount of substitutional incorporated carbon has been observed. Selective Si_xGe_yC_{1 − x − y} deposition processes utilizing a cyclic deposition were developed to integrate epitaxial tensile strained layers into source and drain areas of n-channel transistors.