PREPARATION OF HIGHLY TEXTURED ALN FILMS USING MO AND TI ELECTRODE FOR INTEGRATED ALN-BASED FILM BULK ACOUSTIC WAVE RESONATORS

ABSTRACT

Effect of buffer layer on the characteristics of the AlN thin films deposited on SiNx/Si substrate was systematically examined. Among the buffer layers examined, both Mo and Ti buffer layers can not only greatly enhance the (002) preferred orientation of the films, but also improve the smoothness of the AlN films, whereas the Al thin films contain large grains microstructure and resulting in rough surface and wide distribution of (002) preferred orientation of the films. AlN thin films with smooth surface with (r.m.s. < 6 nm) and narrow distribution of grains' orientation (rocking curve < 3.8°), which is suitable for fabricating the devices. A thin film bulk acoustic wave resonator with resonance frequency around 1.7 GHz was fabricated from thus obtained AlN thin films.     

Polar Ceramics in RF-MEMS and Microwave Reconfigurable Electronics: A Brief Review on Recent Issues

Properties and fabrication status of microdevices for microwaves based on polar ceramics are reviewed. We discuss bulk acoustic wave devices with AlN films, rf-MEMS capacitive switches with high permittivity materials, and tunable ferroelectrics. The relevant properties of ferroelectrics for microwave applications are summarized with emphasis on composites and thin films.     

Acoustic characterization of AlN films using a High Overtone Bulk acoustic wave resonator

Abstract

Using the composite resonator with additional thick AlN film with the FWHM of rocking curve of 2.53° under investigation, the bulk acoustic wave attenuation constant and sound velocity along c-axis were directly measured. The method of High Overtone Bulk acoustic wave Resonator (HBAR) spectroscopy based on frequency, measurements of the positions of the resonator peculiarities of phase and amplitude of electromagnetic wave reflection coefficient from composite resonator structure was applied. The method provides attenuation and velocity measurement in a wide frequency band, using the same sample. For the measurements, standard and modified HBAR spectroscopy based on the analysis of only parallel resonance properties of composite resonator structures were used.     

Electrical and optical characterisation of aluminium nitride piezoelectric films on silicon nitride membranes

Aluminium nitride (AlN) is a thin film piezoelectric material having excellent potential for integration with microelectronic systems. We have investigated flexural modes of Si₃N₄ membrane structures with and without an AlN active layer. AlN films typically 3 μm thick were deposited by RF sputtering. Mechanical excitation was provided acoustically by sweeping the excitation frequency of a 1 MHz air-coupled ultrasonic transducer. Mode shapes were verified by scanning laser vibrometry up to the [3,3] mode, in the frequency range 100 kHz to 1 MHz. Resonant frequencies were identified at the predicted values provided the tension in the layers could be estimated. For a membrane structure incorporating an AlN layer, acoustic and electrical excitation of flexural modes was confirmed by displacement measurements using laser vibrometry and resonant frequencies were compared with analytical calculations.     

The Effect of Microstructure on AlN MEMS Resonator Response

Piezoelectric AlN micro- and nanoelectromechanical systems (MEMS, NEMS) resonator devices are being developed for RF filter applications. Composite structures which include the piezoelectric actuating film, metal electrode layers, and a flexural layer are required for these devices. The crystalline quality of the AlN film is strongly dependant on the growth technique used, and may significantly impact the piezoelectric response. We have fabricated MEMS resonator devices using sputtered and pulsed laser deposited (PLD) AlN thin films. Highly oriented ?0001? PLD AlN films have been deposited on platinum-terminated composite MEMS structures. Devices made using PLD films have been observed to result in significantly greater displacement, lower actuation voltage, and higher device Q than equivalent devices made with sputtered AlN films that are less crystalline and may have different stoichiometry. AlN thin film deposition, device fabrication, and modeshape analysis of resultant MEMS resonator devices are discussed for sputtered and PLD AlN films.     

Thin films of novel ferroelectric composites

Abstract

Composites of BSTO combined with other non electrically active oxides have demonstrated adjustable electronic properteis which can be tailored for use in various electronic devices.^[1,2] These novel composites of barium strontium titanate (BSTO) and oxide III compounds have already exhibited promising results in their ceramic form.^[3] The additive oxides modify the dielectric constant, tunability (change in the dielectric constant with applied voltage), and dielectric loss of the material. One application has been for use in phased array antennas and insertion has been accomplished into several working antenna systems.^[4] To further accommodate the frequencies required by these phased array antennas, thin films of the composites have been fabricated. Preliminary studies have indicated that thin films of such composites exhibit similar behavior as their bulk ceramic counterparts.^[5] The purpose of this study is to investigate the properties of the BSTO/oxide III based compounds in thin film form.     

Characteristics of lithium niobate based capacitors and transistors

Abstract

The electrical properties of thin film (<1000 Å) capacitor devices of lithium niobate grown on silicon and platinum and of thicker film metal-ferroelectric-semiconductor field effect transistors (MFSFET) with lithium niobate as the gate material were measured. Dielectric constants of the thin films on silicon were as high as 27, while those for films on platinum were as high as 49. The MFSFET structures showed good FET properties, and demonstrated a channel current modulation consistent with switching of the ferroelectric gate by pulsing.     

ACOUSTO-FERROELECTRIC NONVOLATILE RAM

ABSTRACT

In this paper, a new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo–acoustic phenomena in ferroelectric films. It is called Acousto-Ferroelectric RAM (AFeRAM) because its operation is based on the piezo–acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell.     

Positron annihilation studies of vacancy related defects in ceramic and thin film Pb(Zr,Ti)O3 materials

Abstract

Preliminary positron annihilation studies of ceramic and thin film Pb(Zr,Ti)O₃ (PZT) materials have been completed. The aim of this work was to examine the effects of processing conditions on vacancy related defects. Positron lifetime measurements on bulk PLZT plates showed an increase in positron trapping to a defect state with increasing grain size consistent with trapping to lead vacancy related defects formed through lead oxide loss during processing. Variable energy positron beam measurements were completed on bulk PLZT plates, sol-gel PZT thin films and laser ablated PLZT thin films. Films processed in a reduced oxygen atmosphere were found to give a higher S-parameter, due to an increase in concentration of neutral or negatively charged vacancy type defects, compared with material processed in an oxidizing ambient.     

Morphological Studies on of Chemically Deposited EuX Thin Films

Abstract

The Europium chalcogenide (EuX) thin films have been deposited bare glass substrates by chemically spray pyrolysis technique at different substrate temperatures, in aqueous medium. The films synthesised were studied morphologically. The effect of substrate temperature on morphological properties has been investigated. The XRD studies reveal that the films are polycrystalline in nature and the deposited material was europium sulphide. The SEM analysis conform the formation of small grains on overall substrate.     

A THEORETICAL STUDY OF THE INFLUENCE OF THE ELECTRIC FIELD AND POLARIZATION DISTRIBUTIONS ON FERROELECTRIC THIN FILMS SWITCHING PROPERTIES

ABSTRACT

One of the essential criteria for the material evaluation for high speed applications such as ferroelectric memories is the switching speed as a function of the applied field. Theoretically the kinetics of switching in bulk and films have often been modeled using models derived from the Kolmogorov Avrami theory. Because some important aspects of thin films are not possible to take into account within this framework, we have adopted another approach based of a time-dependent Ginzburg-Landau model. The present work is devoted to investigating the influence of the surface effect and the bound charges field on the switching properties.     

MICRO ACOUSTIC DEVICES USING PIEZOELECTRIC FILMS

ABSTRACT

A novel PZT based micro acoustic device with the diaphragms clamped on all four edges has been studied. It can be used both as microphone and microspeaker. Compared with other piezoelectric micro acoustic devices, PZT based device has higher sensitivity for microphone and larger output acoustic pressure for microspeaker. The microfabrication process flow of this device is simple, and the transducer has excellent performance, miniature size and high reliability. The micro acoustic devices could be widely used in various practical audio frequencies and ultrasonic systems.     

Preparation of (PbxBa1-x)TiO3 thin films by MOCVD using an aerosol-assisted liquid delivery system

Abstract

Thin films of PbTiO₃, BaTiO₃ and (Pb_xBa_1-x)TiO₃ (PBT) have been prepared by metal-organic chemical vapor deposition using a horizontal reactor with an aerosol-assisted liquid delivery system. Structural and electrical properties have been investigated as a function of the lead content x. First results on PBT thin films grown on platinized silicon substrates show, for x < 0.8, an increasing tetragonal distortion of the lattice cell (c/a >1), and accompanying ferroelectric behavior which is similar to the bulk material. For smaller lead content (x < 0.8) no ferroelectric behavior is established and a small tetragonal distortion of opposite type (c/a <1) is observed. This distortion is attributed to a thermally induced tensile film stress and may be responsible for the suppression of the ferroelectric phase transition.     

Influence of the growth temperature on the epitaxial quality of PbTiO3 films deposited in-situ by sputtering

Abstract

Thin films of lead titanate were prepared in-situ on SrTiO₃ substrates using radio-frequency magnetron sputter deposition. The epitaxial quality of the films has been studied as a function of the substrate temperature. Stoichiometric films have been obtained in the temperature range [550°C, 600°C]. The films deposited in the equilibrium zone have a high degree of c-axis oriented epitaxial crystalline structure as shown by X-ray diffraction in the 2θ/θ, θ, and ? scans configuration as well as by electron channeling pattern. The optimum conditions for growing epitaxial PbTiO₃ layers were determined. The crystallinity of films deposited at 550°C is suprior to those deposited at 600°C. The PbTiO₃ films grown at 550°C have a rocking curve full width at half maximum (FWHM) of 0.2°; Normaski optical and atomic force microscopy show that the surface is apparently free of grain boundaries and very smooth. The refractive index of these films has been evaluated from transmission spectra; it is very close to the bulk material value.     

Multifunctional Ru-AlN heating resistor films for high efficiency inkjet printhead

Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passivated type thermal inkjet printer devices. Ru-AlN thin films were prepared by plasma-enhanced atomic layer deposition in order to intermix Ru and AlN precisely. When the Ru intermixing ratios were optimized, Ru-AlN films showed a favorable electrical resistivity (from 490.9 to 75.3 μΩcm) and minimized temperature coefficient of resistance (TCR) values (from 335 to 360 ppm/K). Moreover, the Ru-AlN films showed a strong oxidation resistant as compared with commercially used TaN_0.8 films because the prepared Ru-AlN thin films had a typical nanocomposite structure. By applying electrical pulses to the heater device using Ru-AlN thin films for a Joule heating, a reliable operation was also proven.     

Chemical vapor deposition of Pb1−xLaxTiO3

Abstract

We report chemical vapor deposition (CVD) of PbLaTiO₃ films for integrated pyroelectric devices. Pb(thd)₂, La(thd)₃ and Ti(O-Pr)₂(thd)₂ were introduced to the reactor via a single liquid precursor solution that is vaporized. Substrate temperatures were approximately 535°C and post deposition annealing was not used. Films were deposited on fused silica and Pt metallized Si substrates. The liquid delivery technique permitted excellent composition control and films on fused silica were predominantly [100] oriented with trace amounts of [110] and [111] present. Pyroelectricity for 0.7μm thick films deposited on Pt metallized Si was measured using a modified Byer-Roundi technique and pyroelectric coefficients as high as 90 nC/cm²·K were observed. The high crystalline quality and pyroelectric properties are attributed to the excellent composition control afforded by the liquid delivery CVD technique.     

Structure and Properties of Preferential (110) Orientation BiFeO3 Thin Films by Sol-Gel Method

Abstract

Multiferroic materials, coexisting of ferroelectric, ferromagnetic and ferroelastic properties, possess potential applications in functional devices. BiFeO₃ (BFO) is a unique room temperature multiferroic material with high ferroelectric Curie temperature and Neel temperature. The BFO thin films were prepared on Si (111) substrate by sol-gel method in this paper. XRD analyses show that the thin films exhibit pure phase and preferred (100) orientation when annealing temperature is 500?°C. Field emission scanning electron microscopy shows that the crystallization degree of the films is getting better with the increase of annealing temperature. The thickness of the sample is about 400?nm. The hysteresis loop of BFO films annealing at 500?°C show 1.93?µC/cm² remnant polarizations. However, the hysteresis loop is not perfect, which may be caused by a large leakage current. The magnetic hysteresis loop of BFO films is tested as well, indicating that the BFO film is antiferromagnetic and the residual magnetization (Mr) and coercive field (Hc) of the BFO films were 0.054?emu/g and 1026.4?Oe, respectively.     

Epitaxial thin film heterostructures of relaxor ferroelectric Pb(Mg1/3Nb2/3)O3-PbTiO3

Abstract

We have grown stoichiometric pure perovskite phase Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) thin films and PMN-PT/SrRuO₃ heterostructures on miscut (100) SrTiO₃ substrates by pulsed laser deposition. X-ray diffraction θ–2θ scans show that the PMN-PT films are purely c-axis oriented. The off-axis Φ scans show that the heterostructures grow “cube-on-cube” with an in-plane epitaxial arrangement of PMN-PT[100], [010] // SrRuO₃[001] // SrTiO₃[100] and PMN-PT[010], [100] // SrRuO₃[110] // SrTiO₃[010]. The crystalline quality of the films found to be comparable to that of bulk single crystals. The AFM images show that the SrRuO₃ and PMN-PT layers have smooth surfaces with root mean square roughness of 9Å. These epitaxial heterostructures can be used for the fabrication of piezoelectric devices.     

Investigation of the effects of milling ceramic targets on the optical and electrical properties of BST thin films deposited by RF sputtering

Abstract

The RF sputtering method was utilized to deposit thin films of Ba_1-xSr_xTiO₃ (BST). The targets utilized in these experiments were prepared from ceramic powders with different particle size. The goal of this work is to examine whether the particle size distribution of the target can affect the properties of the thin films fabricated by the sputtering method. The Atomic Force Microscope (AFM) was used to examine the grain size in the thin films. The composition of the thin films and the bulk materials were examined by Fourier Transform Infrared (FTIR) spectroscopy. The dielectric properties of the thin films were measured and compared to its bulk counterparts. It was found that on lattice matched electrodes of SrRuO₃ on LaAlO₃ substrates, the thin films deposited from ceramic targets manufactured from ball-milled powders had finer grain size than those deposited from targets made from unmilled powders. However, this phenomenon was not observed in the case of polycrystalline films deposited on platinized silicon wafers.     

Thick piezoelectric coatings via modified sol-gel technique

Abstract

A hybrid sol-gel approach is reported for the deposition of high-quality composite PZT films of the thickness  1 μm. In this approach, the metallo-organic sol-gel precursor solution is mixed with fine piezoelectric powders and dip-coated onto Pt/Ti/SiO₂/Si substrates. Different organic viscous additives and deposition strategies were tried in order to deposit dense films with the properties approaching to those of bulk PZT. Using commercial PZT powder (TRS600FG) and ultrasonic mixing during deposition process, composite films having dielectric permittivity of ～2500 and saturation polarization ～35 μC/cm² were obtained. These values are intermediate between bulk ceramics and conventional sol-gel PZT films and therefore are indicative of good piezoelectric properties.