Characteristics of brush plated copper indium telluride films

Copper indium telluride (CIT) films were deposited for the first time by the brush plating technique at different substrate temperatures in the range of 30–80 °C and at a constant deposition current density of 1 mA cm^?2.The Films exhibited single phase CIT. The grain size increased with increase of substrate temperature. Optical band gap of the films varied in the range of 0.98–1.00 eV. Atomic force microscopy studies indicated that the grain size and surface roughness vary from 20 to 50 nm and 1.0 to 1.5 nm, respectively with increase of substrate temperature. The films exhibited photoconductivity.     

Properties of pulse electrodeposited copper gallium sulphide films

Copper gallium sulphide films were deposited for the first time by the pulse electrodeposition technique at different duty cycles in the range of 6–50 % at room temperature and at a constant current density of 1.0 mA cm^?2. The films exhibited single phase copper gallium sulphide. The grain size increased from 30 to 70 nm with increase of duty cycle. Optical band gap of the films varied in the range of 2.30–2.36 eV. The resistivity increased from 0.10 to 1.70 ohm cm with increase of duty cycle from 6 to 50 %. Preliminary studies on solar cells with p-CuGaS₂/n-CuInS₂ junction yielded an efficiency of 4.14 %. This is the first report on solar cells using CuGaS₂ with CuInS₂.     

Properties of pulse electrodeposited copper indium selenide films

Copper Indium Selenide films were deposited by the pulse plating technique at different bath temperatures in the range of 30–80 °C and at 50 % duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium selenide films. The band gap of the films decreased from 1.17 to 1.05 eV with decrease of duty cycle. Atomic force microscope studies indicated that the surface roughness and grain size increased with duty cycle. Room temperature resistivity of the films is in the range of 0.01–2.0 ohm cm. Films deposited at 50 % duty cycle have exhibited a V_oc of 0.59 V, J_sc of 15 mA cm^?2, FF of 0.75 and efficiency of 6.64 %.     

Properties of colored oxide films formed electrochemically on titanium in green electrolytes under ultrasonic stirring

Titanium anodization was successfully carried out in green electrolytes such as acetic acid and sodium bicarbonate solutions, yielding uniformly colored oxide films as passive coatings. Oxide formation was carried out galvanostatically at 9.7 mA cm^?2 up to various cell potential values (in the 20–140 V range), in ultrasonic-stirred electrolyte at room temperature. The anodization rate values varied in the range of 1.8–2.0 nm V^?1 for sodium bicarbonate solutions and 2.3–2.7 nm V^?1 for acetic acid solutions. Micro-Raman spectroscopy allowed the identification of the anatase crystalline phase in the oxides grown up to the highest potentials; under these conditions, the micrographs obtained by scanning electron microscopy revealed oxides with rough and porous surfaces. A variety of colors were obtained for the titanium oxide films (yellow, blue, brown, purple, pink, and green, and different tones of each of them), depending on the final formation potential and the electrolyte nature and concentration; chromatic coordinates measurements exactly defined the color of the films.     

Effect of film thickness on properties of aluminum doped zinc oxide thin films deposition on polymer substrate

A series of aluminum doped zinc oxide thin films with different thickness (25–150 nm) were deposited on indium tin oxide coated polyethylene terephthalate substrates by radio frequency magnetron sputtering method at room temperature. The structural, optical and electrical properties of the films were investigated by X-ray Diffractometer, UV–Vis spectrometer and Hall Effect Measurement System. All the obtained films were polycrystalline with a hexagonal structure and a preferred orientation along [002] direction with the c-axis perpendicular to the substrate surface. The optical energy band gap (E_g) values of the films were found to be in the range from 3.36 to 3.26 eV, and their average optical transmissions were about 75 % in the visible region. The films had excellent electrical properties with the resistivities in the range from 2.78 × 10^?5 to 2.03 × 10^?4 Ω cm, carrier densities more than 3.35 × 10²¹ cm^?3 and Hall mobilities between 5.77 and 11.13 cm²/V s.     

Vertically-aligned Mn(OH)<Subscript>2</Subscript> nanosheet films for flexible all-solid-state electrochemical supercapacitors

The arrangement of the electrode materials is a significant contributor for constructing high performance supercapacitor. Here, vertically-aligned Mn(OH)₂ nanosheet thin films were synthesized by cathodic electrodeposition technique on flexible Au coated polyethylene terephthalate substrates. Morphologies, microstructures, chemical compositions and valence state of the nanosheet films were characterized systematically. It shows that the nanosheets arranged vertically to the substrate, forming a porous nanowall structures and creating large open framework, which greatly facilitate the adsorption or diffusion of electrolyte ions for faradaic redox reaction. Electrochemical tests of the films show the specific capacitance as high as 240.2 F g^?1 at 1.0 A g^?1. The films were employed to assemble symmetric all-solid-state supercapacitors with LiCl/PVA gel severed as solid electrolyte. The solid devices exhibit high volumetric capacitance of 39.3 mF?cm^?3 at the current density 0.3 mA cm^?3 with robust cycling stability. The superior performance is attributed to the vertically-aligned configuration.     

Structural and optical properties of sulfurized Cu2ZnSnS4 thin films from Cu–Zn–Sn alloy precursors

This study reports the preparation of Cu₂ZnSnS₄ (CZTS) thin films by magnetron sputtering deposition with a Cu–Zn–Sn ternary alloy target and sequential sulfurization. The effects of substrate temperatures on the structural, morphological, compositional as well as optical and electrical properties were characterized. The results showed the CZTS thin films prepared by sulfurization at substrate temperature of 570 °C yielded secondary phases along with CZTS compound. The relatively good properties of CZTS thin film were obtained after sulfurization at substrate temperature of 550 °C. This CZTS film showed compact structure with large grain size of 900 nm, direct optical band gap of 1.47 eV, optical absorption coefficient over 10⁴ cm^?1, resistivity of 4.05 Ω cm, carrier concentration of 8.22 × 10¹⁸ cm^?3, and mobility of 43.38 cm² V^?1 S^?1.     

Application of poly(3,4-ethylenedioxythiophene):polystyrenesulfonate in polymer heterojunction solar cells

In this study, p-type semiconducting polymer of acid, poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), has been employed as a hole-transporting electrode to fabricate organic polymer heterojunction photovoltaic cells. The results showed that the resultant poly(3-hexylthiophene): C₆₀ derivatives [6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM)/PEDOT:PSS can significantly expand the light absorption range which was expected to enhance the sunlight excitation. The influences of annealing conditions and barrier layer on the photoelectric performances were investigated in detail, giving an optimized synthesis conditions: annealed temperature was at 120 °C for 90 min, the thickness of PEDOT:PSS film was approximately 3–4 μm, and the ratio of PCBM and P3HT was 1:2. The blended heterojunction consisting of PCBM and P3HT was used as charge carrier-transferring medium to replace I₃ ^?/I^? redox electrolyte, showing a short-circuit current of 4.30 mA cm^?2, an open-circuit voltage of 0.83 V, and a light-to-electric energy conversion efficiency of 2.37 % under a simulated solar light irradiation of 100 mW cm^?2. In addition, a solid-state polymer heterojunction photovoltaic cells with a short-circuit current of 3.59 mA cm^?2, an open-circuit voltage of 0.80 V, and a light-to-electric energy conversion efficiency of 1.9 % was successfully fabricated by simplifying the process.     

Effect of sintering temperature on electrical properties, dielectric characteristics, and aging behavior of ZnO–V2O5-based varistor ceramics modified with Bi2O3

The effect of sintering temperature on microstructure, electrical properties, dielectric characteristics, and aging behavior of ZnO–V₂O₅–MnO₂–Nb₂O₅–Bi₂O₃ varistor ceramics was systematically investigated at 875–950 °C. The sintered density decreased from 5.50 to 5.34 g/cm³ and the average grain size increased from 5.4 to 15.0 μm with an increase in the sintering temperature. The breakdown field (E_B) decreased from 5,785 to 1,181 V/cm with an increase in the sintering temperature. The varistor ceramics sintered at 900 °C exhibited a surprisingly high nonlinear coefficient (α = 61). The donor concentration (N_d) increased from 2.08 × 10¹⁷ to 4.64 × 10¹⁷ cm^?3 with an increase in the sintering temperature and the barrier height (Φ_b) exhibited 1.08 eV as the maximum value at 900 °C. Concerning stability, the varistors sintered at 950 °C exhibited the strongest accelerated aging characteristics, where %ΔE_B = ?1.4 % and %Δα = ?14.6 % for DC accelerated aging stress of 0.85 E_B/85 °C/24 h.     

Enhanced electrochemical reduction of hydrogen peroxide by Co<Subscript>3</Subscript>O<Subscript>4</Subscript> nanowire electrode

Crystalline Co₃O₄ nanowire arrays with different morphologies grown on Ni foam were investigated by varying the reaction temperature, the concentration of precursors, and reaction time. The Co₃O₄ nanowires synthesized under typical reaction condition had a diameter range of approximately 500–900 nm with a length of 17 µm. Electrochemical reduction of hydrogen peroxide (H₂O₂) of the optimized Co₃O₄ nanowire electrode was studied by cyclic voltammetry. A high current density of 101.8 mA cm^?2 was obtained at ?0.4 V in a solution of 0.4 M H₂O₂ and 3.0 M NaOH at room temperature compared to 85.8 mA cm^?2 at ?0.35 V of the Co₃O₄ nanoparticle electrode. Results clearly indicated that the Ni foam supported Co₃O₄ nanowire electrode exhibited superior catalytic activity and mass transport kinetics for H₂O₂ electrochemical reduction.     

Hydrothermal Sm-doped tungsten oxide vertically plate-like array photoelectrode and its enhanced photoelectrocatalytic efficiency for degradation of organic dyes

Samarium doped tungsten oxide film was synthesized by a hydrothermal method with sodium tungstate as W precursor and samarium oxide as dopant. After annealing at 450 °C for 0.5 h, the morphology and structural characterization of as-prepared films were determined with scanning electron microscopy, X-ray diffraction and high-resolution transmission electron microscope. For the pure and Sm-doped WO₃ films serving as the photoanodes, photoelectrocatalytic properties were demonstrated by degrading methyl orange and methylene blue solution, showing that Sm-doped WO₃ film has faster degrading rate than pure WO₃ film. Photoelectrochemical properties were investigated using linear sweep voltammetry, electrochemical impedance spectroscopy, Mott–Schottky and incident photon to current conversion efficiency. Sm-doped WO₃ achieves a high photocurrent of 1.50 mA cm^?2 at 1.4 V versus. Ag/AgCl, which is 1.8 times as high as that of pure WO₃ film (0.83 mA cm^?2). Moreover, photogenerated hole injection efficiency was improved by retarding the recombination at the interface of electrode/electrolyte. The results indicate the Sm₂O₃ formed by excess doping led to a better photoelectrocatalytic and photoelectrochemical activities of Sm-doped WO₃ film, suggesting that the doping of Sm is a favorable strategy to improve the performance of WO₃ film photoanode.     

Influence of substrate temperature on the growth and properties of reactively sputtered In-rich InAlN films

Indium-rich InAlN films were prepared on Si (111) substrates by using reactive co-sputtering in a mixed Ar-N₂ atmosphere. The substrate temperature was varied from room temperature to 300 °C to investigate the film’s growth and properties at different temperatures. Structural and optical properties of the films were evaluated through high resolution XRD and Raman spectroscopy respectively, surface morphology and roughness analysis was performed by using FE-SEM and AFM respectively, whereas the electrical characterizations were made through resistivity and current–voltage (I–V) measurements respectively. Highly c-axis oriented nanocrystalline InAlN films with wurtzite structure were obtained at a substrate temperature of 100 °C and above. Structural quality of the films was improved with increase of the substrate temperature. The Raman spectroscopy revealed A₁ (LO) modes which became more intense by the increasing the substrate temperature. The electrical studies indicated n-type nature of InAlN film having electron concentration in the range 3 × 10¹⁹–20 × 10¹⁹ cm^?3. The electrical resistivity exhibited a decreasing trend with increase of the deposition temperature. The I–V measurements showed a noticeable increase in the value of current by increasing the substrate temperature to 300 °C.     

Enhanced photocatalytic activity of Mg0.05Zn0.95O thin films prepared by sol–gel method through a cycle

Mg_0.05Zn_0.95O thin films were prepared on silicon substrates by a sol–gel dip-coating technique. Microstructure, surface topography and optical properties of the thin films were characterized by X-ray diffraction, atom force microscopy, Fourier transform infrared spectrophotometer and fluorescence spectrometer. The results show that the thin film annealed at 700 °C has the largest average grain size and exhibits the best c-axis preferred orientation. As annealing temperature increases to 800 °C, the grain along c-axis has been suppressed. Roughness factor and average particle size increase with the increase of annealing temperature. The IR absorption peak appearing at about 416 cm^?1 is assigned to hexagonal wurtzite ZnO. The thin film annealed at 700 °C has the maximum oxygen vacancy, which can be inferred from the green emission intensity. Photocatalytic results show that the thin film annealed at 700 °C exhibits remarkable photocatalytic activity, which may be attributed to the larger grain size, roughness factor and concentration of oxygen vacancy. Enhanced photocatalytic activity of Mg_0.05Zn_0.95O thin films after a cycle may be attributed to the increase of surface oxygen vacancy and photocorrosion of amorphous MgO on the surface of thin film under UV irradiation.     

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Copper zinc tin sulfide (CZTS, Cu₂ZnSnS₄) is a low band gap semiconductor that is attractive for use in solar cells. We investigated the dependence of the structure and properties of CZTS thin films on the temperature used to sulfurize precursor thin films composed of copper, zinc and tin fabricated by electrochemical deposition. The precursor films were sulfurized in a furnace with three zones, which allowed fine control of the sulfurization temperature between 250 and 400 °C. X-ray diffraction and Raman spectroscopic measurements confirmed that the films were composed of CZTS following sulfurization. The grain size and crystallinity of the films increased with sulfurization temperature. The composition of CZTS also varied with sulfurization temperature. The proportions of Cu and Zn increased while that of Sn decreased with increasing sulfurization temperature. Absorption and reflectance spectra revealed that the absorption coefficients and band gaps of the CZTS films varied with sulfurization temperature between 3–4.1 × 10⁴ cm^?1 and 1.4–1.53 eV, respectively. Solar cells containing CZTS sulfurized at 400 °C showed a maximum efficiency of 2.04 %, which was attributed to the higher crystallinity and larger grain size of CTZS compared with thin films sulfurized at lower temperatures. Our results show that control of sulfurization temperature is an important factor in optimizing the performance of CZTS thin films in solar cells.     

Low indium content In–Zn–O system towards transparent conductive films: structure,properties and comparison with AZO and GZO

In this work, low content indium doped zinc oxide (IZO) thin films were deposited on glass substrates by RF magnetron sputtering using IZO ceramic targets with the In₂O₃ doping content of 2, 6, and 10 wt%, respectively. The influences of In₂O₃ doping content and substrate temperature on the structure and morphology, electrical and optical properties, and environmental stability of IZO thin films were investigated. It was found that the 6 wt% doped IZO thin film deposited at 150?°C exhibited the best crystal quality and the lowest resistivity of 9.87?×?10^?4 Ω cm. The corresponding Hall mobility and carrier densities were 9.20 cm² V^?1 s^?1 and 6.90?×?10²⁰ cm^?3, respectively. Compared with 2 wt% Al₂O₃ doped ZnO and 5 wt% Ga₂O₃ doped ZnO thin films, IZO thin film with the In₂O₃ doping content of 6 wt% featured the lowest surface roughness of 1.3 nm. It also showed the smallest degradation with the sheet resistance increased only about 4.4% at a temperature of 121?°C, a relative humidity of 97% for 30 h. IZO thin film with 6 wt% In₂O₃ doping also showed the smallest deterioration with the sheet resistance increased only about 2.8 times after heating at 500?°C for 30 min in air. The results suggested that low indium content doped ZnO thin films might meet practical requirement in environmental stability needed optoelectronic devices.     

Comparative studies on structural, optoelectronic and electrical properties of SILAR grown PbS thin films from acidic, neutral and alkaline cationic reaction bath

Thin films of Lead sulphide (PbS) were grown on soda lime glass substrate by Successive Ionic Layer Adsorption and Reaction method from acidic, neutral and alkaline cationic precursor reaction bath by keeping the pH of the anionic precursor invariant. The structural and morphological aspects of the as prepared samples were investigated using XRD and SEM results. The as-prepared samples were polycrystalline with nanometer sized grains and identified as galena type cubic structure. The values of average crystallite size were found to be in the range 22–30?nm. The SEM micrographs show variations in morphology. Optical studies revealed the existence of both direct and indirect band gap with values in the range of 1.65–1.98 and 0.61–0.90?eV respectively. The room temperature conductivity of the PbS thin films were in the range 1.19?×?10^?8–5.92?×?10^?8?Ω?cm^?1. The optical band gap energy has inverse relation with grain size and electrical conductivity is closely related to structural parameters like grain size, crystallinity and micro strain. The estimated lattice parameter, grain size, optical band gaps, solid state and electrical properties were correlated with pH of the cationic solution. In this work, we establish that the pH of the cationic precursor media has colossal effect on the structural, morphological, optoelectronic, solid-state and electrical properties of PbS thin films.     

Growth of cobalt–nickel layered double hydroxide on nitrogen-doped graphene by simple co-precipitation method for supercapacitor electrodes

Nitrogen-doped graphene/Co–Ni layered double hydroxide (RGN/Co–Ni LDH) is synthesized by a facile co-precipitation method. Transmission electron microscopy images indicated that the formation of Co–Ni(OH)₂ nanoflakes with the good dispersion anchored on the surfaces of the nitrogen-doped graphene sheets. The nitrogen-doped graphene composites delivered the enhanced electrochemical performances compared to the pure Co–Ni LDH due to the improved electronic conductivity and its hierarchical layer structures. The high specific capacitance of 2092 F g^?1 at current density of 5 mA cm^?2 and the rate retention of 86.5% at current density of 5–50 mA cm^?2 are achieved by RGN/Co–Ni LDH, higher than that of pure Co–Ni LDH (1479 F g^?1 and 76.5%). Moreover, the two-electrode asymmetric supercapacitor, with the RGN/Co–Ni LDH composites as the positive electrode and active carbon as the negative electrode material, exhibits energy density of 49.4 Wh kg^?1 and power density of 101.97 W kg^?1 at the current density of 5 mA cm^?2, indicating the composite has better capacitive behavior.     

Growth and characterizations of dual ion beam sputtered CIGS thin films for photovoltaic applications

The growth of CIGS thin films on soda-lime glass substrates at different substrate temperatures by dual ion beam sputtering system in a single-step route from a single quaternary sputtering target with the composition of Cu (In_0.70 Ga_0.30) Se₂ was reported. The effects of the substrate temperature on structural, optical, morphological and electrical properties of CIGS films were investigated. Stoichiometry of one such film was investigated by X-ray photoelectron spectroscopy. All CIGS films had demonstrated a strong (112) orientation located at 2θ ~26.70^o, which indicated the chalcopyrite structure of films. The value of full-width at half-maximum of (112) peak was reduced from 0.58° to 0.19° and crystallite size was enlarged from 14.98 to 43.05 nm as growth temperature was increased from 100 to 400 °C. However, atomic force microscope results showed a smooth and uniform surface at lower growth temperature and the surface roughness was observed to increase with increasing growth temperature. Hall measurements exhibited the minimum film resistivity of 0.09 Ω cm with a hole concentration of 2.42 × 10¹⁸ cm^?3 and mobility of 28.60 cm² V^?1 s^?1 for CIGS film grown at 100 °C. Film absorption coefficient was found to enhance nominally from 1 × 10⁵ to 2.3 × 10⁵ cm^?1 with increasing growth temperature from 100 to 400 °C.     

The temperature dependence of stresses in aluminum films on oxidized silicon substrates

In situ measurements were carried out of stress at the AlSiO₂ interface at various temperatures (25–500 °C) and for various film thicknesses (0.2–1.6 microm). These data are complemented with microstructural studies by transmission electron microscopy.For the aluminum films studied, the intrinsic structural component was very small (less than 2 × 10⁸ dyn cm^?2). On heating, thermal mismatch led to a compressive stress, with dσ/dT ≈ ?2 × 10⁷ dyn cm^?2 °C; these films yielded at 6σ6 ; ? 5 × 10⁸ dyn cm^?2, primarily through diffusion creep and grain growth. On cooling from about 450–500 °C, thermal mismatch led to a tensile stress which was limited mainly by dislocation slip. The final room temperature value after thermal cycling ranged from 0.5 × 10⁹ dyn cm^?2 for a 1.5 microm film to 8 × 10⁹ dyn cm^?2 for a 0.2 microm film; these values are believed to represent the critical stress for the generation of dislocation loops within the grains.The grain size of cold-deposited aluminum films ranged from about 0.2 microm for films 0.45 microm thick to about 2 microm for films 1.5 microm thick. Thermal cycling led to an order-of-magnitude increase in the grain size together with the formation of dislocation networks within the grains.     

Rutile TiO<Subscript>2</Subscript> films as electron transport layer in inverted organic solar cell

Titanium dioxide (TiO₂) thin films were prepared by sol–gel spin coating method and deposited on ITO-coated glass substrates. The effects of different heat treatment annealing temperatures on the phase composition of TiO₂ films and its effect on the optical band gap, morphological, structural as well as using these layers in P3HT:PCBM-based organic solar cell were examined. The results show the presence of rutile phases in the TiO₂ films which were heat-treated for 2 h at different temperatures (200, 300, 400, 500 and 600 °C). The optical properties of the TiO₂ films have altered by temperature with a slight decrease in the transmittance intensity in the visible region with increasing the temperature. The optical band gap values were found to be in the range of 3.28–3.59 eV for the forbidden direct electronic transition and 3.40–3.79 eV for the allowed direct transition. TiO₂ layers were used as electron transport layer in inverted organic solar cells and resulted in a power conversion efficiency of 1.59% with short circuit current density of 6.64 mA cm^?2 for TiO₂ layer heat-treated at 600 °C.